CN108608724A - It is a kind of without net knot version design method - Google Patents
It is a kind of without net knot version design method Download PDFInfo
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- CN108608724A CN108608724A CN201611130951.6A CN201611130951A CN108608724A CN 108608724 A CN108608724 A CN 108608724A CN 201611130951 A CN201611130951 A CN 201611130951A CN 108608724 A CN108608724 A CN 108608724A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000004075 alteration Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 23
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 230000005611 electricity Effects 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000009286 beneficial effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000004744 fabric Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000009954 braiding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
- B41F15/36—Screens, Frames; Holders therefor flat
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/14—Forme preparation for stencil-printing or silk-screen printing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Evolutionary Computation (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Printing Plates And Materials Therefor (AREA)
Abstract
The invention belongs to manufacture of solar cells technical fields, and in particular to and it is a kind of without net netting version design method, include the following steps：The image of halftone silk screen is collected, and is transmitted to computer；Image is handled；Silk screen spatial model is built on computers；In silk screen spatial model, the silk thread by being fitted specific position moves towards, and grid line slot is positioned over to two adjacent silk thread centre positions, it is ensured that grid line slot trend is not intersected with silk thread, and is drawn.The beneficial effects of the invention are as follows：Grid line slot can be not in the problem of grid line slot intersects with silk thread completely between two adjacent silk threads；What is made does not have the intersection point of silk thread intersection without net netting version, is not in low spot or breakpoint on grid line, manufactured grid line conducts electricity very well, and is conducive to the electricity conversion of crystal-silicon battery slice；Halftone is made, speed is fast, and production efficiency is high；Grid line Forming Quality is good, and positioning accuracy is high, and the quality of production is high.
Description
Technical field
The invention belongs to manufacture of solar cells technical fields, and in particular to a kind of without net netting version design method.
Background technology
Have currently on the market it is a kind of without net knot version, can according to silk thread tendency make halftone grid line figure, to keep away
The case where silk thread of the grid line made on halftone and silk screen intersects is exempted from.
In the manufacturing process of crystal silicon solar batteries, need to make grid line in silicon chip surface to collect opto-electronic conversion in silicon chip
The electric current of generation, the prior art make grid line using following technique：Grid line figure is made first on mask plate, utilizes the figure
The light-sensitive emulsion of coating is exposed on halftone and is developed and carries out photoetching, hollow wire casing is produced, then passes through silk-screen printing
The line of rabbet joint by wire metals slurry (such as silver paste) through halftone is printed on silicon chip, and grid line is made in sintering.Existing halftone includes
Screen cloth and photosensitive glue-line, photosensitive glue-line are coated on screen cloth, intersect between the warp and weft of halftone.It is prepared on mask plate
There is grid line figure, mask plate is tightly attached to the one side for having photosensitive glue-line on halftone, with ultraviolet light, not by mask plate grid line
The part of graph shealtering cures under ultraviolet light conditions, and the part blocked it is flushable fall, formed the line of rabbet joint.These slots formed
Between line, with latitude and longitude and loose position relationship, often intersect, as shown in Figure 1,10 middle longitude 101 of silk screen and latitude
The crosspoint 103 that line 102 is formed largely appears in grid line slot 20.
In order to improve the photoelectric conversion efficiency of cell piece, the width for reducing grid line on silicon chip as far as possible is needed, to increase light
Product of showing up still when grid line width is narrow, because of the presence in these crosspoints 103, can hinder plain conductor slurry smoothly
It is bitten on silicon chip from grid line slot 20；Simultaneously when printing slurry, in warp 101 and 102 cross-point locations of weft and through ultraviolet light
When developing after solidification in the delta-shaped region that the edge for the light-sensitive emulsion that 20 position of grid line slot is formed is constituted, with certain viscosity
Slurry will continue to accumulate, and the area that metal paste can effectively penetrate through silk screen in grid line slot 20 is caused constantly to reduce, because
This, causes conductive grid line on silicon chip low spot or breakpoint occur, poor so as to cause the electric conductivity of grid line, affects crystal silicon battery
The electricity conversion of piece.
In the application process of the actual manufacturing because silk screen in the manufacturing process of braiding and manufacture halftone
In the process, do not ensure that warp and weft are completely in ideal position, such as it is possible that tilt, bending phenomena such as,
And the silk thread spacing for the silk screen in the halftone of solar cell manufacture is only micron order, to be set in so narrow space
When setting tens or up to a hundred grid line slots 20, the position of each grid line slot 20 is individually determined one by one, occurs to avoid crosspoint
In grid line slot 20, manufacturing process take it is longer, moreover, because the position of silk screen middle longitude and weft correspond to silicon chip on required by
Grid line position it is different because of each halftone difference, in this way, manufacturing process takes longer, manufacturing cost increases, the quality of production
It is not high.
In other words, in the manufacturing process without net netting version, grid line needs to match with silk thread trend in screen cloth.But
During screen knitting, it is easy to appear bending and deformation, wire section region undulate curves for silk screen；According to current
Design method grid line cannot be guaranteed 100% among two silk threads, it may appear that the problem of grid line intersects with silk thread cannot arrive
Up to desired design purpose, it is necessary to look for new grid line design method again.
Invention content
The purpose of the present invention is overcoming defect of the existing technology, providing a kind of grid line slot can be completely adjacent between two
Silk thread between, be not in the problem of grid line slot intersects with silk thread；The friendship for not having silk thread to intersect without net netting version made
Point is not in low spot or breakpoint on grid line, and manufactured grid line conducts electricity very well, and is conducive to the electricity conversion of crystal-silicon battery slice
's；Halftone is made, speed is fast, and production efficiency is high without net netting version design method.
The technical solution adopted by the present invention to solve the technical problems is：It is a kind of without net knot version design method comprising
Following steps：
S1, collects the image of halftone silk screen, and is transmitted to computer；
S2 handles image；
S3 builds silk screen spatial model on computers；
S4, in silk screen spatial model, the silk thread by being fitted specific position moves towards, and grid line slot is positioned over adjacent two
Root silk thread centre position, it is ensured that grid line slot trend is not intersected with silk thread, and is drawn.
Through the invention make molding halftone without net netting version design method, in the practical silk thread trend of drafting,
Even if silk screen if there is the grid line slot for being bent and deforming setting can absolutely completely between two adjacent silk threads,
It is not in the problem of grid line slot intersects with silk thread.The present invention's makes halftone without net netting version design method, and speed is fast, production
It is efficient；Grid line Forming Quality is good, and positioning accuracy is high, and the quality of production is high.
Producer makes according to drawing on corresponding silk screen qualified knots version without net.Carrying out stretching-gluing-exposure-
After inspection, making does not have the intersection point that silk thread intersects, metal paste that will equably be injected in grid line slot without net netting version,
Be not in low spot or breakpoint on grid line, manufactured grid line conducts electricity very well, and is conducive to the electricity conversion of crystal-silicon battery slice.
Specifically, in step S1, using microscope camera, silk screen is scanned three times along silk thread direction, according to three
The result of secondary scanning is corrected image, forms final image.Using the high magnification microscope camera of high definition, imaging is more clear
It is clear and cost-effective.It scans and is corrected three times, imaging is more accurate, and silk thread image is not easy deviation.
Further, in step S2, the image of acquirement is corrected processing to aberration, facilitate identification and is looked for a little.
Further, in step S3, by treated, image removes bottom picture, forms silk screen space structure figure, facilitates identification
Silk screen.
Further, in step S4, fixed position silk screen is chosen, by image procossing mode, weft is shielded, forms warp
Channel is demarcated warp specific location, is fitted to through line graph；Then make two adjacent multiple intermediate points through line graph, root
According to the width that grid line requires, along the vertical direction through line graph, the half-distance that grid line width is offset to both sides by intermediate point is made
All slot points are fitted to line, form grid line slot figure by slot point.Graphics process accuracy is high, more accurate convenient for production location
Grid line, without silk thread diffraction or the sawtooth reflected to form, grid line quality is high at grid line edge.
Further, in step S4, use successively three-dimensional software and CAD by grid line slot be fitted to two adjacent silk threads it
Between, and draw, mapping is convenient, and design is accurate.
The present invention it is a kind of without net netting version design method advantageous effect be：
1. through the invention make molding halftone without net netting version design method, moved towards in the practical silk thread of drafting
In, though silk screen if there is the grid line slot for being bent and deforming setting can absolutely completely between two adjacent silk threads it
Between, be not in the problem of grid line slot intersects with silk thread；
2. the present invention's makes halftone without net netting version design method, speed is fast, and production efficiency is high；Grid line Forming Quality
Good, positioning accuracy is high, and the quality of production is high.
3. producer made on corresponding silk screen according to drawing it is qualified knot version without net, carrying out stretching-gluing-exposure
After light-inspection, making does not have the intersection point that silk thread intersects, metal paste that will equably be noted in grid line slot without net netting version
Enter, be not in low spot or breakpoint on grid line, manufactured grid line conducts electricity very well, and the photoelectric conversion for being conducive to crystal-silicon battery slice is imitated
Rate.
Description of the drawings
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the screen layout that the silk screen of the prior art intersects with grid line slot；
Fig. 2 is a kind of flow chart without net netting version design method of the present invention；
Fig. 3 be through the invention it is a kind of without net netting version design method make without net tie screen layout；
Fig. 4 is A-A sectional views in Fig. 3.
Wherein:10. silk screen, 101. warps, 102. wefts, 103. crosspoints；20. grid line slot.
Specific implementation mode
In conjunction with the accompanying drawings, the present invention is further explained in detail.These attached drawings are simplified schematic diagram, only with
Illustration illustrates the basic structure of the present invention, therefore it only shows the composition relevant to the invention.
A kind of specific embodiment without net netting version design method of the present invention as shown in figs 2-4 comprising as follows
Step：
S1, collects the image of halftone silk screen 10, and is transmitted to computer；
S2 handles image；
S3 builds 10 spatial model of silk screen on computers；
S4, in 10 spatial model of silk screen, the silk thread by being fitted specific position moves towards, and grid line slot 20 is positioned over adjacent
Two silk thread centre positions, it is ensured that the trend of grid line slot 20 is not intersected with silk thread, and is drawn.
Making molding halftone without net netting version design method and drawing as shown in Figure 3 and Figure 4 through this embodiment
Practical silk thread trend in, even if silk screen 10 can absolutely be situated between completely if there is the grid line slot 20 for being bent and deforming setting
It is not in the problem of grid line slot 20 intersects with silk thread between two adjacent silk threads.The present embodiment is set without net netting version
Meter method makes halftone, and speed is fast, and production efficiency is high；Grid line Forming Quality is good, and positioning accuracy is high, and the quality of production is high.
Producer makes according to drawing on corresponding silk screen 10 qualified knots version without net.Carrying out stretching-gluing-exposure
After light-inspection, making does not have the intersection point that silk thread intersects without net netting version, and metal paste will be equably in grid line slot 20
It injects, is not in low spot or breakpoint on grid line, manufactured grid line conducts electricity very well, and the photoelectric conversion for being conducive to crystal-silicon battery slice is imitated
Rate.
Specifically, in step S1, using microscope camera, silk screen is scanned three times along silk thread direction, according to three
The result of secondary scanning is corrected image, forms final image.Using the high magnification microscope camera of high definition, imaging is more clear
It is clear and cost-effective.It scans and is corrected three times, imaging is more accurate, and silk thread image is not easy deviation.
Further, in step S2, the image of acquirement is corrected processing to aberration, facilitate identification and is looked for a little.
Further, in step S3, by treated, image removes bottom picture, forms silk screen space structure figure, facilitates identification
Silk screen.
Further, in step S4, fixed position silk screen is chosen, by image procossing mode, weft 102 is shielded, is formed
Through line passage, 101 specific location of warp is demarcated, 101 figure of warp is fitted to；Then make two adjacent 101 figures of warp
Multiple intermediate points, the width required according to grid line are offset to both sides grid line along the vertical direction of 101 figure of warp by intermediate point
One half-distance of width makees slot point, and all slot points are fitted to line, forms 20 figure of grid line slot.Graphics process accuracy is high,
Convenient for the more accurate grid line of production location, without silk thread diffraction or the sawtooth reflected to form, grid line quality is high at grid line edge.
Further, in step S4, use three-dimensional software and CAD that grid line slot 20 is fitted to two adjacent silk threads successively
Between, and draw, mapping is convenient, and design is accurate.
It should be appreciated that specific embodiment described above is only used for explaining the present invention, it is not intended to limit the present invention.By
The obvious changes or variations that the spirit of the present invention is extended out are still in the protection scope of this invention.
Claims (6)
1. a kind of without net netting version design method, which is characterized in that include the following steps：
S1, collects the image of halftone silk screen, and is transmitted to computer；
S2 handles image；
S3 builds silk screen spatial model on computers；
S4, in silk screen spatial model, the silk thread by being fitted specific position moves towards, and grid line slot is positioned over to two adjacent silks
Line centre position, it is ensured that grid line slot trend is not intersected with silk thread, and is drawn.
2. according to claim 1 a kind of without net netting version design method, it is characterised in that：In step S1, use is micro-
Mirror camera scans silk screen along silk thread direction, is corrected to image according to the result scanned three times three times, is formed most
Whole image.
3. according to claim 1 or 2 a kind of without net netting version design method, it is characterised in that：In step S2, it will obtain
Image processing is corrected to aberration.
4. according to claim 3 a kind of without net netting version design method, it is characterised in that：In step S3, after processing
Image remove bottom picture, formed silk screen space structure figure.
5. according to claim 4 a kind of without net netting version design method, it is characterised in that：In step S4, chooses and fix
Position silk screen shields weft by image procossing mode, is formed through line passage, demarcates warp specific location, be fitted to through line chart
Shape；Then make two adjacent multiple intermediate points through line graph, according to the width that grid line requires, along the Vertical Square through line graph
To the half-distance for being offset to both sides grid line width by intermediate point makees slot point, and all slot points are fitted to line, form grid line slot
Figure.
6. according to claim 1 a kind of without net netting version design method, it is characterised in that：In step S4, use successively
Grid line slot is fitted between two adjacent silk threads by three-dimensional software and CAD, and is drawn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611130951.6A CN108608724A (en) | 2016-12-09 | 2016-12-09 | It is a kind of without net knot version design method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611130951.6A CN108608724A (en) | 2016-12-09 | 2016-12-09 | It is a kind of without net knot version design method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108608724A true CN108608724A (en) | 2018-10-02 |
Family
ID=63657424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611130951.6A Pending CN108608724A (en) | 2016-12-09 | 2016-12-09 | It is a kind of without net knot version design method |
Country Status (1)
| Country | Link |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111993757A (en) * | 2020-09-04 | 2020-11-27 | 仓和精密制造(苏州)有限公司 | Preparation method of screen printing plate without net knots |
| CN112453722A (en) * | 2020-11-12 | 2021-03-09 | 上海新倬壮印刷科技有限公司 | Steel wire laser treatment process for mesh-knot-free SE screen |
| CN112455062A (en) * | 2020-11-13 | 2021-03-09 | 上海新倬壮印刷科技有限公司 | Mesh cloth processing method suitable for SE (net knot free) |
| CN112937075A (en) * | 2021-01-09 | 2021-06-11 | 浙江硕克科技有限公司 | Non-mesh-junction screen printing plate based on positioning identification and manufacturing process thereof |
| CN113997709A (en) * | 2021-12-29 | 2022-02-01 | 南京日托光伏新能源有限公司 | Printing method for realizing thinning of front grid line of MWT battery |
| CN114222663A (en) * | 2019-08-16 | 2022-03-22 | 弗劳恩霍夫应用研究促进协会 | Screen printing plate for use in screen printing method, screen printing apparatus, and screen printing method |
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| CN102582220A (en) * | 2012-02-29 | 2012-07-18 | 苏州欧方电子科技有限公司 | Method for manufacturing anode screen plate for improving solar cell silicon sheet conversion rate |
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| CN106183363A (en) * | 2016-08-10 | 2016-12-07 | 昆山良品丝印器材有限公司 | 400 mesh reel off raw silk from cocoons and knot an edition mask-making technology without net |
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| DE102004048680A1 (en) * | 2003-10-08 | 2005-05-19 | Sharp K.K. | Manufacturing solar cell involves making grid electrode with narrow width on light reception surface of substrate with pn junction by sintering metal paste material, making rod-shaped main electrode electrically connected to grid electrode |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114222663A (en) * | 2019-08-16 | 2022-03-22 | 弗劳恩霍夫应用研究促进协会 | Screen printing plate for use in screen printing method, screen printing apparatus, and screen printing method |
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| CN111993757A (en) * | 2020-09-04 | 2020-11-27 | 仓和精密制造(苏州)有限公司 | Preparation method of screen printing plate without net knots |
| CN112453722A (en) * | 2020-11-12 | 2021-03-09 | 上海新倬壮印刷科技有限公司 | Steel wire laser treatment process for mesh-knot-free SE screen |
| CN112455062A (en) * | 2020-11-13 | 2021-03-09 | 上海新倬壮印刷科技有限公司 | Mesh cloth processing method suitable for SE (net knot free) |
| CN112937075A (en) * | 2021-01-09 | 2021-06-11 | 浙江硕克科技有限公司 | Non-mesh-junction screen printing plate based on positioning identification and manufacturing process thereof |
| CN113997709A (en) * | 2021-12-29 | 2022-02-01 | 南京日托光伏新能源有限公司 | Printing method for realizing thinning of front grid line of MWT battery |
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Application publication date: 20181002 |