CN103972309B - A kind of electrode of solar battery and solaode - Google Patents
A kind of electrode of solar battery and solaode Download PDFInfo
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- CN103972309B CN103972309B CN201410228402.7A CN201410228402A CN103972309B CN 103972309 B CN103972309 B CN 103972309B CN 201410228402 A CN201410228402 A CN 201410228402A CN 103972309 B CN103972309 B CN 103972309B
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- grid
- electrode
- solar battery
- grid line
- group
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000013084 building-integrated photovoltaic technology Methods 0.000 abstract description 3
- 238000007639 printing Methods 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The present invention relates to a kind of electrode of solar battery, described electrode of solar battery includes least one set grid line, described often group grid line include at least one main grid and one group be all connected with this main grid and outwards disperse the thin grid of extension, the thin grid that described two adjacent groups grid line is corresponding connect one to one, and namely respectively form two sides between group grid line and continuously or continue in all directions.The invention has the beneficial effects as follows: electrode coverage is long-pending to be reduced, and improves solar cell properties；Simultaneously manufactured crystal silicon solar energy battery is designed beautifully, it is adaptable to the field such as BIPV, municipal works；Design in addition combined with the present invention, it is possible to reduce the slurry consumption that printing is required, improve electrical property；And present configuration is simple, it is easy to realize.
Description
Technical field
The invention belongs to new forms of energy area of solar cell, particularly relate to a kind of electrode of solar battery and solaode.
Background technology
In the crystal silicon solar energy battery being widely used at present, electrode effect is irreplaceable, it serves as collects photo-generated carrier and derives the effect of external circuits, existing cell, electrode pattern design (such as Fig. 1), grid line is intensive, shading-area is big, and main grid region is big with silicon chip contact area, adding surface recombination loss, battery efficiency is in urgent need to be improved.
Summary of the invention
It is an object of the invention to the defect overcoming prior art to exist, it is provided that a kind of electrode of solar battery overcoming the problems referred to above and solaode.
The technical scheme realizing the object of the invention is: a kind of electrode of solar battery, described electrode of solar battery includes least one set grid line, described often group grid line include at least one main grid and one group be all connected with this main grid and outwards disperse the thin grid of extension, described thin grid are one group converges to any ray, when grid line be two groups and more than two time, the thin grid that described two adjacent groups grid line is corresponding connect one to one, and namely respectively form two sides between group grid line and continuously or continue in all directions.
Preferably, the outer place of described solaode is provided with continuous print limit grid line, all grid lines by described solaode outer, and its thin grid extended to solaode edge are all connected to described limit grid.
Preferably, adjacent in the described same group of thin grid angle between two thin grid is identical.
Preferably, described main grid is bar shaped, rectangle, circle, polygon or closed curve.
Preferably, between the thin grid junction point each two of described two adjacent groups grid line, bridging has short grid line, described short grid line to arrange continuously or interval setting.
Preferably, described thin grid are straight line or curve.
A kind of solaode, its electrode of solar battery is foregoing electrode of solar battery.
The invention has the beneficial effects as follows: electrode coverage is long-pending to be reduced, and improves solar cell properties；Simultaneously manufactured crystal silicon solar energy battery is designed beautifully, it is adaptable to the field such as BIPV, municipal works；Design in addition combined with the present invention, it is possible to reduce the slurry consumption that printing is required, improve electrical property；And present configuration is simple, it is easy to realize.
Accompanying drawing explanation
Being clearly understood to make present disclosure be easier to, below according to specific embodiment and in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein:
Fig. 1 is the schematic diagram of solaode and electrode in prior art；
Fig. 2 is the schematic diagram of solaode of the present invention and electrode.
In figure, 1, main grid 2, thin grid, 3 short grid lines 4, limit grid
Detailed description of the invention
A kind of electrode of solar battery, described electrode of solar battery includes least one set grid line, described often group grid line include at least one main grid and one group be all connected with this main grid and outwards disperse the thin grid of extension, when grid line be two groups and more than two time, the thin grid that described two adjacent groups grid line is corresponding connect one to one, and namely respectively form two sides between group grid line and continuously or continue in all directions.
Its processing technology is as follows:
1, nitric acid, hydrofluoric acid mixed solution or sodium hydroxide solution is utilized to make matte at silicon chip surface.
2, after persalt, hydrofluoric acid solution clean, silicon chip is inserted in diffusion furnace and be diffused operation: temperature is 800-900 DEG C, passing into gas is nitrogen, oxygen, phosphorus oxychloride mixing gas, and the process time is 30-90 minute, forms 30-150 Ω/sqr emitter junction at silicon chip surface.
3, wet etching or plasma etching equipment is utilized to remove silicon chip limit knot.
4, PECVD device is utilized to make silicon nitride film on emitter junction surface: film thickness monitoring about scope 85um, refractive index span of control 2.0-2.15.
5, utilize screen printing apparatus to prepare front and back electrode and back surface field, utilize sintering furnace to carry out electrode, electric field co-firing process.
Front electrode graphic designs (such as Fig. 2), backplate, back surface field figure adopt common half tone figure.
One embodiment of the present of invention is as shown in Figure 2, this electrode of solar battery, described electrode of solar battery includes at least 16 group grid lines, 4x4 matrix arrangement, described often group grid line include a main grid 1 and one group be all connected with this main grid and outwards disperse the thin grid 2 of extension, the thin grid 2 that described two adjacent groups grid line is corresponding connect one to one, and are namely respectively formed between group grid line and continue in all directions.Described thin grid 2 are one group converges to any ray.The angle between two thin grid 2 adjacent in described same group of thin grid is identical.Between the thin grid 2 junction point each two of described two adjacent groups grid line, bridging has short grid line 3, and described short grid line 3 interval is arranged.
If desired, it is also be provided with continuous print limit grid line 4 at the outer place of solaode, all grid lines by described solaode outer, its thin grid extended to solaode edge are all connected to described limit grid 4.
As required, described main grid is except the bar shaped in such as above-described embodiment, it is also possible to be rectangle, circle, polygon or closed curve.
It addition, in order to attractive in appearance, described thin grid can also be curve, the ray (straight line) in such as above-described embodiment is used that identical curve substitutes.
A kind of solaode, its electrode of solar battery is foregoing electrode of solar battery.
The invention has the beneficial effects as follows: electrode coverage is long-pending to be reduced, and improves solar cell properties；Simultaneously manufactured crystal silicon solar energy battery is designed beautifully, it is adaptable to the field such as BIPV, municipal works；Design in addition combined with the present invention, it is possible to reduce the slurry consumption that printing is required, improve electrical property；And present configuration is simple, it is easy to realize.
Particular embodiments described above; the purpose of the present invention, technical scheme and beneficial effect have been further described; it is it should be understood that; the foregoing is only specific embodiments of the invention; it is not limited to the present invention; all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (7)
1. an electrode of solar battery, it is characterized in that, described electrode of solar battery includes least one set grid line, described often group grid line include at least one main grid and one group be all connected with this main grid and outwards disperse the thin grid of extension, described thin grid are one group converges to any ray, when grid line be two groups and more than two time, the thin grid that described two adjacent groups grid line is corresponding connect one to one, and namely respectively form two sides between group grid line and continuously or continue in all directions.
2. electrode of solar battery according to claim 1, it is characterized in that, the outer place of described solaode is provided with continuous print limit grid line, all grid lines by described solaode outer, and its thin grid extended to solaode edge are all connected to described limit grid.
3. electrode of solar battery according to claim 1, it is characterised in that the angle between two thin grid adjacent in described same group of thin grid is identical.
4. electrode of solar battery according to claim 1, it is characterised in that described main grid is bar shaped, rectangle, circle, polygon or closed curve.
5. electrode of solar battery according to claim 1, it is characterised in that between the thin grid junction point each two of described two adjacent groups grid line, bridging has short grid line, described short grid line to arrange continuously or interval setting.
6. electrode of solar battery according to claim 1, it is characterised in that described thin grid are straight line or curve.
7. a solaode, it is characterised in that the arbitrary described electrode of solar battery of its electrode of solar battery such as claim 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410228402.7A CN103972309B (en) | 2014-05-27 | 2014-05-27 | A kind of electrode of solar battery and solaode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410228402.7A CN103972309B (en) | 2014-05-27 | 2014-05-27 | A kind of electrode of solar battery and solaode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103972309A CN103972309A (en) | 2014-08-06 |
| CN103972309B true CN103972309B (en) | 2016-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410228402.7A Active CN103972309B (en) | 2014-05-27 | 2014-05-27 | A kind of electrode of solar battery and solaode |
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| Country | Link |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202015004065U1 (en) * | 2015-06-09 | 2015-07-30 | Solarworld Innovations Gmbh | solar cell array |
| CN106876503B (en) * | 2017-03-30 | 2018-04-24 | 隆基乐叶光伏科技有限公司 | Using the solar energy stacked wafer moudle of center convergence gate line electrode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969369A (en) * | 2012-12-10 | 2013-03-13 | 山东力诺太阳能电力股份有限公司 | Solar battery frontage electrode structure as well as battery piece and component |
| CN103192597A (en) * | 2012-01-09 | 2013-07-10 | 昆山允升吉光电科技有限公司 | Solar energy screen |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4666708B2 (en) * | 1999-10-13 | 2011-04-06 | 新電元工業株式会社 | Field effect transistor |
| CN103107211B (en) * | 2013-01-15 | 2015-08-12 | 常州亿晶光电科技有限公司 | A kind of crystal silicon solar batteries and preparation method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103192597A (en) * | 2012-01-09 | 2013-07-10 | 昆山允升吉光电科技有限公司 | Solar energy screen |
| CN102969369A (en) * | 2012-12-10 | 2013-03-13 | 山东力诺太阳能电力股份有限公司 | Solar battery frontage electrode structure as well as battery piece and component |
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| Publication number | Publication date |
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| CN103972309A (en) | 2014-08-06 |
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Address after: No. 1, Tenghui Road, Chang Kun Industrial Park, Suzhou, Changshou City, Jiangsu Patentee after: Suzhou Tenghui Photovoltaic Technology Co., Ltd. Address before: No. 1, Tenghui Road, Chang Kun Industrial Park, Suzhou, Changshou City, Jiangsu Patentee before: Zhongli Talesun Solar Technology Co., Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211022 Address after: 223800 No. 211, Zhongxing East Road, economic development zone, Siyang County, Suqian City, Jiangsu Province Patentee after: Siyang Tenghui photoelectric Co.,Ltd. Patentee after: SUZHOU TALESUN SOLAR TECHNOLOGIES Co.,Ltd. Address before: 215542 No. 1, Tenghui Road, Changkun Industrial Park, Shajiabang Town, Changshu City, Suzhou City, Jiangsu Province Patentee before: SUZHOU TALESUN SOLAR TECHNOLOGIES Co.,Ltd. |