CN205130593U - Crystalline silicon solar cells substep half tone for printing technology - Google Patents
Crystalline silicon solar cells substep half tone for printing technology Download PDFInfo
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- CN205130593U CN205130593U CN201520815219.7U CN201520815219U CN205130593U CN 205130593 U CN205130593 U CN 205130593U CN 201520815219 U CN201520815219 U CN 201520815219U CN 205130593 U CN205130593 U CN 205130593U
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- half tone
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Abstract
The utility model relates to a crystalline silicon solar cells substep half tone for printing technology, including main grid half tone and vice aperture plate version to should there being the main grid line on the main grid half tone to there being vice grid line in the vice aperture plate version, the width of vice grid line is in the distance in the vice aperture plate version the main grid wire pair answers edge certain distance L department in position to widen gradually on the main grid half tone, with main grid line position overlapping department width maxmizing. The utility model discloses avoid printing the disconnected bars problem of main grid position appearance that the vice aperture plate version of in -process corresponds step by step at silicon solar cell to the collection efficiency of electric current has been improved.
Description
Technical field
The utility model relates to crystal silicon solar energy battery and manufactures field, specifically discloses a kind of crystal silicon solar energy battery substep typography half tone.
Background technology
Along with continuous maturation and the progress of crystal silicon solar energy battery technology, cost becomes the problem that first battery process optimization and new technology development will be considered gradually; Main grid and secondary grid split and design on two pieces of half tones by current employing substep typography, use different silver to starch and reduce silver-coloredly to starch unit consumption and greatly reduce manufacturing cost by main grid and secondary grid.Existing substep printing screen plate design is only that simple main grid and secondary grid fractionations is designed on two pieces of half tones, and reckon without after first printing main grid, the main grid figure on cell piece is on the impact of the secondary aperture plate version of follow-up printing.Main gate line is first printed onto on silicon chip, and after drying, the height of main gate line silver slurry is generally between 5 ~ 10 microns, and defines a difference in height (as shown in Figure 2) between substrate.When secondary grid line republishes on silicon chip, owing to there being the existence of this difference in height, half tone in main gate line edge because of crimp, cause the secondary grid line deformation after printing, height and width all reduce, cause the place that thin grid are overlapping with main gate line to disconnect time serious, thus have impact on the collection (as shown in Figure 4, circle in be disconnected grid) of secondary grid line to electric current.When disconnected grid are more, the photoelectric transformation efficiency of cell piece reduces, thus causes loss.Even if the secondary grid line do not disconnected, in the Long-Time Service process of assembly, also there is the risk of reliability.
Utility model content
Goal of the invention of the present utility model is: provide a kind of crystal silicon solar energy battery substep typography half tone effectively can avoiding occurring in battery production substep printing process disconnected grid problem for overcoming the above problems.
The technical scheme that the utility model adopts is such:
A kind of crystal silicon solar energy battery substep typography half tone, comprise main grid half tone and secondary aperture plate version, to having main gate line on described main grid half tone, to there being secondary grid line in described secondary aperture plate version, in described secondary aperture plate version, the width of secondary grid line is being widened gradually apart from certain distance L place, main gate line correspondence position edge on described main grid half tone, is reaching maximum with main gate line location overlap place width.
Further, in described secondary aperture plate version, the width of secondary grid line is being that 0.5 ~ 2mm place is widened gradually apart from main gate line position edge L on corresponding described main grid half tone.
Further, in described secondary aperture plate version, the width of secondary grid line is reaching maximum with main gate line location overlap place width, and the amplitude of broadening is 10 ~ 100% of secondary grid line developed width.
In sum, owing to adopting technique scheme, the beneficial effects of the utility model are:
The utility model is by the live width near the corresponding main grid position of the secondary aperture plate version of amendment, by increasing the live width of the secondary grid in this region on secondary grid gradually, thus increase the strike through in this region, reduce the impact of main grid paste for secondary aperture plate version, thus the problem that the secondary grid line caused because of the drop between main gate line and substrate near minimizing main grid position disconnects, do not affect the collection of secondary grid line to electric current.
Accompanying drawing explanation
Fig. 1 is secondary grid line distributed architecture figure in the secondary aperture plate version of the utility model;
Fig. 2 is the distribution sectional view of the utility model main gate line on silicon chip;
Fig. 3 is that the utility model is for substep printing actual effect figure;
Fig. 4 is that existing half tone is for substep printing effect figure.
Mark in figure: 1, secondary aperture plate version; 11, secondary grid line; 2, main gate line; 3, silicon chip.
Detailed description of the invention
Below in conjunction with accompanying drawing, the utility model is described in further detail.
As shown in Fig. 1 ~ 3, a kind of crystal silicon solar energy battery substep typography half tone, comprise main grid half tone and secondary aperture plate version 1, to there being main gate line 2 on described main grid half tone, to there being secondary grid line 11 in described secondary aperture plate version 1, in described secondary aperture plate version 1, the width of secondary grid line 11 is being widened gradually apart from main gate line 2 correspondence position edge on described main grid half tone (in Fig. 1, two place's dotted line positions are main gate line edge) certain distance L place, is reaching maximum with main gate line 2 location overlap place width.
In described secondary aperture plate version 1, the width of secondary grid line 11 is being that 1mm place is widened gradually apart from main gate line 2 position edge L on corresponding described main grid half tone, reaching maximum with main gate line 2 location overlap place width, the amplitude of broadening is 10 ~ 100% of secondary grid line 11 developed width, and this amplitude broadened changes to some extent because the order of severity of secondary grid line 11 width of reality, disconnected grid is different with the height of main gate line 2.When disconnected grid ratio is more serious, the ratio broadened suitably increases, and when the height of main gate line 2 is higher, the ratio of widening also must increase.
The utility model by the live width near the corresponding main grid position of the secondary aperture plate version of amendment, thus increases the strike through in this region, thus the problem (as shown in Figure 3) that the secondary grid line caused because of the drop between main gate line and substrate near minimizing main grid position disconnects.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection domain of the present utility model.
Claims (3)
1. a crystal silicon solar energy battery substep typography half tone, comprise main grid half tone and secondary aperture plate version, to having main gate line on described main grid half tone, to there being secondary grid line in described secondary aperture plate version, it is characterized in that: in described secondary aperture plate version, the width of secondary grid line is being widened gradually apart from certain distance L place, main gate line correspondence position edge on described main grid half tone, is reaching maximum with main gate line location overlap place width.
2. a kind of crystal silicon solar energy battery substep typography half tone according to claim 1, is characterized in that: in described secondary aperture plate version, the width of secondary grid line is being that 0.5 ~ 2mm place is widened gradually apart from main gate line position edge L on corresponding described main grid half tone.
3. a kind of crystal silicon solar energy battery substep typography half tone according to claim 1, it is characterized in that: in described secondary aperture plate version, the width of secondary grid line is reaching maximum with main gate line location overlap place width, and the amplitude of broadening is 10 ~ 100% of secondary grid line developed width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520815219.7U CN205130593U (en) | 2015-10-22 | 2015-10-22 | Crystalline silicon solar cells substep half tone for printing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520815219.7U CN205130593U (en) | 2015-10-22 | 2015-10-22 | Crystalline silicon solar cells substep half tone for printing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205130593U true CN205130593U (en) | 2016-04-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520815219.7U Expired - Fee Related CN205130593U (en) | 2015-10-22 | 2015-10-22 | Crystalline silicon solar cells substep half tone for printing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205130593U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018218474A1 (en) * | 2017-05-31 | 2018-12-06 | 通威太阳能（合肥）有限公司 | Dual printing processing method and screen plate for improving electrode tensile strength of battery panel |
| CN110254062A (en) * | 2019-06-27 | 2019-09-20 | 浙江晶科能源有限公司 | A kind of solar cell silk screen printing method and photovoltaic module |
-
2015
- 2015-10-22 CN CN201520815219.7U patent/CN205130593U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018218474A1 (en) * | 2017-05-31 | 2018-12-06 | 通威太阳能（合肥）有限公司 | Dual printing processing method and screen plate for improving electrode tensile strength of battery panel |
| US10763378B2 (en) | 2017-05-31 | 2020-09-01 | Tongwei Solar Energy (Hefei) Co., Ltd. | Double printing method and screen stencil for improving the tensile force of the electrode of solar panel |
| CN110254062A (en) * | 2019-06-27 | 2019-09-20 | 浙江晶科能源有限公司 | A kind of solar cell silk screen printing method and photovoltaic module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160406 Termination date: 20211022 |