CN102572310B - 光电转换器件 - Google Patents
光电转换器件 Download PDFInfo
- Publication number
- CN102572310B CN102572310B CN201110310637.7A CN201110310637A CN102572310B CN 102572310 B CN102572310 B CN 102572310B CN 201110310637 A CN201110310637 A CN 201110310637A CN 102572310 B CN102572310 B CN 102572310B
- Authority
- CN
- China
- Prior art keywords
- bipolar transistor
- electric current
- current
- emitter
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 19
- 238000009825 accumulation Methods 0.000 claims description 17
- 238000005286 illumination Methods 0.000 claims description 11
- 230000003321 amplification Effects 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 description 28
- 230000009466 transformation Effects 0.000 description 12
- 230000005669 field effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010231533A JP5744463B2 (ja) | 2010-10-14 | 2010-10-14 | 光電変換装置 |
| JP2010-231533 | 2010-10-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102572310A CN102572310A (zh) | 2012-07-11 |
| CN102572310B true CN102572310B (zh) | 2015-02-25 |
Family
ID=45933317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110310637.7A Expired - Fee Related CN102572310B (zh) | 2010-10-14 | 2011-10-14 | 光电转换器件 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8704147B2 (enExample) |
| JP (1) | JP5744463B2 (enExample) |
| CN (1) | CN102572310B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5744463B2 (ja) * | 2010-10-14 | 2015-07-08 | キヤノン株式会社 | 光電変換装置 |
| JP7173660B2 (ja) * | 2018-09-03 | 2022-11-16 | 日清紡マイクロデバイス株式会社 | 光センサ回路 |
| WO2022120329A1 (en) | 2020-12-03 | 2022-06-09 | Analog Devices, Inc. | Logarithmic current to voltage converters |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1700745A (zh) * | 2004-05-20 | 2005-11-23 | 佳能株式会社 | 固体摄像装置和相机 |
| CN101800861A (zh) * | 2009-02-09 | 2010-08-11 | 索尼公司 | 固态图像摄取器件和相机系统 |
| CN101809745A (zh) * | 2008-02-29 | 2010-08-18 | 佳能株式会社 | 固态图像拾取装置和照相机 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4065668A (en) * | 1976-07-22 | 1977-12-27 | National Semiconductor Corporation | Photodiode operational amplifier |
| WO1983003177A1 (en) * | 1982-03-04 | 1983-09-15 | Blomley, Peter, Fred | Gain regulation circuit |
| JPS5927569A (ja) * | 1982-08-06 | 1984-02-14 | Hitachi Ltd | 半導体スイツチ素子 |
| JPS6482815A (en) * | 1987-09-25 | 1989-03-28 | Sharp Kk | Photocoupler circuit |
| US4973833A (en) * | 1988-09-28 | 1990-11-27 | Minolta Camera Kabushiki Kaisha | Image sensor including logarithmic converters |
| JPH0664280B2 (ja) * | 1989-04-19 | 1994-08-22 | オリンパス光学工業株式会社 | カメラの露出制御装置 |
| NL8902422A (nl) * | 1989-09-29 | 1991-04-16 | Philips Nv | Meetinrichting. |
| JPH03270251A (ja) * | 1990-03-20 | 1991-12-02 | Fujitsu Ltd | 半導体集積回路装置 |
| JPH04123521A (ja) * | 1990-09-13 | 1992-04-23 | Sharp Corp | 光結合ロジックデバイス |
| US5164682A (en) * | 1991-07-24 | 1992-11-17 | Taralp Guener | Two-port wideband bipolar transistor amplifiers |
| DE4431117C2 (de) * | 1994-09-01 | 1997-09-25 | Gerd Reime | Schaltung zum Einstellen des Arbeitspunktes einer Photodiode |
| JP3315651B2 (ja) | 1998-08-31 | 2002-08-19 | キヤノン株式会社 | 光センサと固体撮像装置 |
| JP2001215550A (ja) * | 2000-02-01 | 2001-08-10 | Canon Inc | 光電変換装置、調光回路およびcmosセンサ |
| US6677570B1 (en) * | 2000-09-22 | 2004-01-13 | Nortel Networks Limited | Wide dynamic range optical power detector |
| JP4086514B2 (ja) * | 2002-02-13 | 2008-05-14 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
| JP2004006694A (ja) * | 2002-03-29 | 2004-01-08 | Toshiba Corp | 受光素子及び光半導体装置 |
| US6731488B2 (en) * | 2002-04-01 | 2004-05-04 | International Business Machines Corporation | Dual emitter transistor with ESD protection |
| JP3959381B2 (ja) * | 2003-09-04 | 2007-08-15 | 株式会社東芝 | 半導体光センサ、及び、携帯端末 |
| US7214922B2 (en) * | 2004-09-17 | 2007-05-08 | Kabushiki Kaisha Toshiba | Semiconductor photosensor device and information apparatus with sensitivity region for wide dynamic range |
| JP2006332226A (ja) * | 2005-05-25 | 2006-12-07 | Toshiba Corp | 半導体光センサ装置 |
| JP2007251234A (ja) * | 2006-03-13 | 2007-09-27 | Canon Inc | 定数倍電流増幅回路 |
| JP4815282B2 (ja) * | 2006-06-27 | 2011-11-16 | シリンクス株式会社 | 光電変換装置 |
| US7592869B2 (en) * | 2007-09-17 | 2009-09-22 | Finisar Corporation | Variable gain amplifier having dual gain control |
| US8106346B2 (en) * | 2008-09-04 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Photodetector |
| US8913166B2 (en) | 2009-01-21 | 2014-12-16 | Canon Kabushiki Kaisha | Solid-state imaging apparatus |
| US8174318B2 (en) * | 2010-01-28 | 2012-05-08 | Analog Devices, Inc. | Apparatus and method for providing linear transconductance amplification |
| JP5744463B2 (ja) * | 2010-10-14 | 2015-07-08 | キヤノン株式会社 | 光電変換装置 |
| JP2012147183A (ja) * | 2011-01-11 | 2012-08-02 | Canon Inc | 光電変換装置 |
| JP6045136B2 (ja) * | 2011-01-31 | 2016-12-14 | キヤノン株式会社 | 光電変換装置 |
-
2010
- 2010-10-14 JP JP2010231533A patent/JP5744463B2/ja not_active Expired - Fee Related
-
2011
- 2011-09-30 US US13/249,764 patent/US8704147B2/en not_active Expired - Fee Related
- 2011-10-14 CN CN201110310637.7A patent/CN102572310B/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1700745A (zh) * | 2004-05-20 | 2005-11-23 | 佳能株式会社 | 固体摄像装置和相机 |
| CN101809745A (zh) * | 2008-02-29 | 2010-08-18 | 佳能株式会社 | 固态图像拾取装置和照相机 |
| CN101800861A (zh) * | 2009-02-09 | 2010-08-11 | 索尼公司 | 固态图像摄取器件和相机系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120091322A1 (en) | 2012-04-19 |
| CN102572310A (zh) | 2012-07-11 |
| US8704147B2 (en) | 2014-04-22 |
| JP2012084790A (ja) | 2012-04-26 |
| JP5744463B2 (ja) | 2015-07-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150225 Termination date: 20171014 |