CN102560434A - 腔室组件和具有它的金属有机化合物化学气相沉积设备 - Google Patents
腔室组件和具有它的金属有机化合物化学气相沉积设备 Download PDFInfo
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- CN102560434A CN102560434A CN2010105866055A CN201010586605A CN102560434A CN 102560434 A CN102560434 A CN 102560434A CN 2010105866055 A CN2010105866055 A CN 2010105866055A CN 201010586605 A CN201010586605 A CN 201010586605A CN 102560434 A CN102560434 A CN 102560434A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
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Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010586605.5A CN102560434B (zh) | 2010-12-13 | 2010-12-13 | 金属有机化合物化学气相沉积设备 |
PCT/CN2011/083312 WO2012079467A1 (zh) | 2010-12-13 | 2011-12-01 | 腔室组件和具有它的金属有机化合物化学气相沉积设备 |
TW100144809A TWI503869B (zh) | 2010-12-13 | 2011-12-06 | Chamber components and chemical vapor deposition equipment containing their organic compounds |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010586605.5A CN102560434B (zh) | 2010-12-13 | 2010-12-13 | 金属有机化合物化学气相沉积设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102560434A true CN102560434A (zh) | 2012-07-11 |
CN102560434B CN102560434B (zh) | 2014-10-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010586605.5A Active CN102560434B (zh) | 2010-12-13 | 2010-12-13 | 金属有机化合物化学气相沉积设备 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN102560434B (zh) |
TW (1) | TWI503869B (zh) |
WO (1) | WO2012079467A1 (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103628040A (zh) * | 2012-08-28 | 2014-03-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Mocvd设备和mocvd加热方法 |
CN103806094A (zh) * | 2012-11-08 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 外延生长设备 |
CN104233225A (zh) * | 2013-06-17 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室以及设置有该反应腔室的半导体处理设备 |
CN104513971A (zh) * | 2013-09-29 | 2015-04-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室及等离子体加工设备 |
CN107829078A (zh) * | 2018-01-03 | 2018-03-23 | 烟台银河新材料有限公司 | 一种改进的气相沉积炉 |
CN108231521A (zh) * | 2018-01-03 | 2018-06-29 | 大连理工大学 | 一种用于低压射频放电的石英桶密封结构 |
CN110331439A (zh) * | 2019-07-22 | 2019-10-15 | 杭州弘晟智能科技有限公司 | 一种用于碳化硅外延的加热装置 |
CN110657677A (zh) * | 2018-06-29 | 2020-01-07 | 3D加公司 | 用于熔接电子部件的设备 |
CN111088526A (zh) * | 2019-12-27 | 2020-05-01 | 季华实验室 | 一种多片装载的碳化硅外延生长设备 |
WO2020118873A1 (zh) * | 2018-12-13 | 2020-06-18 | 深圳市捷佳伟创新能源装备股份有限公司 | 等离子体淀积炉的反应室结构 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2215282B1 (en) | 2007-10-11 | 2016-11-30 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
CN104342751B (zh) * | 2013-08-02 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔和mocvd设备 |
SE541039C2 (en) * | 2016-05-12 | 2019-03-12 | Epiluvac Ab | CVD Reactor With A Multi-Zone Heated Process Chamber |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101118112A (zh) * | 2007-09-07 | 2008-02-06 | 上海中加电炉有限公司 | 大型真空热压炉 |
CN201463533U (zh) * | 2009-07-27 | 2010-05-12 | 潍坊市北海精细陶瓷有限公司 | 真空感应炉炉体 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10055033A1 (de) * | 2000-11-07 | 2002-05-08 | Aixtron Ag | CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor |
JP2003100643A (ja) * | 2001-09-26 | 2003-04-04 | Daiichi Kiden:Kk | 高温cvd装置 |
JP3984820B2 (ja) * | 2001-11-16 | 2007-10-03 | 株式会社神戸製鋼所 | 縦型減圧cvd装置 |
TWI229897B (en) * | 2002-07-11 | 2005-03-21 | Mitsui Shipbuilding Eng | Large-diameter sic wafer and manufacturing method thereof |
JP4551106B2 (ja) * | 2004-03-31 | 2010-09-22 | 東洋炭素株式会社 | サセプタ |
CN1276122C (zh) * | 2004-04-20 | 2006-09-20 | 南昌大学 | 用于金属有机化学气相沉积系统中的加热装置 |
DE102004062553A1 (de) * | 2004-12-24 | 2006-07-06 | Aixtron Ag | CVD-Reaktor mit RF-geheizter Prozesskammer |
CN100482858C (zh) * | 2006-09-22 | 2009-04-29 | 西安工业大学 | 液体输送金属有机物化学汽相沉积设备 |
JP2008130682A (ja) * | 2006-11-17 | 2008-06-05 | Kobe Steel Ltd | 加熱装置 |
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2010
- 2010-12-13 CN CN201010586605.5A patent/CN102560434B/zh active Active
-
2011
- 2011-12-01 WO PCT/CN2011/083312 patent/WO2012079467A1/zh active Application Filing
- 2011-12-06 TW TW100144809A patent/TWI503869B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101118112A (zh) * | 2007-09-07 | 2008-02-06 | 上海中加电炉有限公司 | 大型真空热压炉 |
CN201463533U (zh) * | 2009-07-27 | 2010-05-12 | 潍坊市北海精细陶瓷有限公司 | 真空感应炉炉体 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103628040A (zh) * | 2012-08-28 | 2014-03-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Mocvd设备和mocvd加热方法 |
CN103628040B (zh) * | 2012-08-28 | 2016-08-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Mocvd设备和mocvd加热方法 |
CN103806094A (zh) * | 2012-11-08 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 外延生长设备 |
CN103806094B (zh) * | 2012-11-08 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 外延生长设备 |
CN104233225A (zh) * | 2013-06-17 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室以及设置有该反应腔室的半导体处理设备 |
CN104233225B (zh) * | 2013-06-17 | 2017-03-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室以及设置有该反应腔室的半导体处理设备 |
CN104513971A (zh) * | 2013-09-29 | 2015-04-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室及等离子体加工设备 |
CN108231521A (zh) * | 2018-01-03 | 2018-06-29 | 大连理工大学 | 一种用于低压射频放电的石英桶密封结构 |
CN107829078A (zh) * | 2018-01-03 | 2018-03-23 | 烟台银河新材料有限公司 | 一种改进的气相沉积炉 |
CN107829078B (zh) * | 2018-01-03 | 2019-06-21 | 烟台银河新材料有限公司 | 一种改进的气相沉积炉 |
CN108231521B (zh) * | 2018-01-03 | 2019-09-06 | 大连理工大学 | 一种用于低压射频放电的石英桶密封结构 |
CN110657677A (zh) * | 2018-06-29 | 2020-01-07 | 3D加公司 | 用于熔接电子部件的设备 |
WO2020118873A1 (zh) * | 2018-12-13 | 2020-06-18 | 深圳市捷佳伟创新能源装备股份有限公司 | 等离子体淀积炉的反应室结构 |
CN110331439A (zh) * | 2019-07-22 | 2019-10-15 | 杭州弘晟智能科技有限公司 | 一种用于碳化硅外延的加热装置 |
CN111088526A (zh) * | 2019-12-27 | 2020-05-01 | 季华实验室 | 一种多片装载的碳化硅外延生长设备 |
CN111088526B (zh) * | 2019-12-27 | 2021-05-11 | 季华实验室 | 一种多片装载的碳化硅外延生长设备 |
Also Published As
Publication number | Publication date |
---|---|
TW201227809A (en) | 2012-07-01 |
WO2012079467A1 (zh) | 2012-06-21 |
CN102560434B (zh) | 2014-10-22 |
TWI503869B (zh) | 2015-10-11 |
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Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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Address after: 100176 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beijing North China microelectronics equipment Co Ltd |