CN102540359B

CN102540359B - Highlighted LED (light-emitting diode) optical coupling device

Info

Publication number: CN102540359B
Application number: CN201010607800.1A
Authority: CN
Inventors: 熊大曦
Original assignee: Individual
Current assignee: Individual
Priority date: 2010-12-27
Filing date: 2010-12-27
Publication date: 2015-02-04
Anticipated expiration: 2030-12-27
Also published as: CN102540359A

Abstract

The invention discloses a highlighted LED (light-emitting diode) optical coupling device which comprises a substrate, an LED chip module and an optical coupling device, wherein the LED chip module is arranged on the substrate, and the optical coupling device covers the LED chip module; and the optical coupling device comprises an encapsulation layer for encapsulating the LED chip module and an optical coupler directly arranged on the encapsulation layer. Through adoption of the technical scheme, the highlighted LED optical coupling device disclosed by the invention has the advantages that through directly arranging the optical coupler on the encapsulation layer and not using an air gap or glass and the like which influences the optical coupling efficiency, the optical coupling efficiency is greatly improved; and through direct connection, the LED chip module can be prevented from being damaged by vibration, thereby greatly improving the service life.

Description

A kind of high brightness LED optical coupling device

Technical field

The present invention relates to a kind of LED illumination product, particularly a kind of high brightness LED optical coupling device.

Background technology

Along with the develop rapidly of LED technology and reaching its maturity of great power LED production technology, its low consumption, efficient, volume is little, lightweight and the many merits such as long-life, make it be widely used, the development of the encapsulation technology of great power LED, accelerates great power LED greatly in lighting field and the application showing field.

Existing high brightness LED optical coupling device comprises substrate and is installed on the LED chip module on described substrate, also comprise the optically coupled device covered on described LED chip module, described optically coupled device comprises the encapsulated layer encapsulating described LED chip module and the photo-coupler be located at above described encapsulated layer, LED chip module is damaged for preventing photo-coupler, clearance or glass is had between photo-coupler and LED chip module, the optical index of air and glass and the optical index of photo-coupler have larger difference, greatly reduce the efficiency that light that LED chip module sends enters photo-coupler, in order to improve coupling efficiency, some systems attempt make light-emitting area and optical device close, but be difficult in operation control, if gap is too small, likely in vibration, because the contact of optical device and surface of contact can damage LED chip, reduce serviceable life.As [CN101802666A] such as Yang Yi proposes a kind of method improving coupling efficiency, but still retain clearance; Catherine etc. [CN101438201A] suggestion adopt refractive index be 2.0 or more glass improve and get optical efficiency, but always also there is no such material in reality.

Summary of the invention

For solving the problem, the object of the present invention is to provide a kind of coupling efficiency high and the high brightness LED optical coupling device of long service life.

For achieving the above object, technical scheme of the present invention is: a kind of high brightness LED optical coupling device, comprise substrate and be installed on the LED chip module on described substrate, also comprise the optically coupled device covered on described LED chip module, described optically coupled device comprises the encapsulated layer encapsulating described LED chip module and the photo-coupler be directly located at above described encapsulated layer, the efficient lighting area of described LED chip module is equal to or less than the xsect of described photo-coupler, namely the vertical projection of described photo-coupler covers whole light-emitting areas of described LED chip module, described photo-coupler is optical wand.

Preferably, the difference between the optical index of described encapsulated layer and described photo-coupler is ± 0.5.

Preferably, the upper surface of described encapsulated layer is concordant with the upper surface of described LED chip module.

Preferably, described encapsulated layer is resin, silica gel or quartz.

Preferably, described photo-coupler is also optical fiber.

Preferably, described photo-coupler is by silica gel or resin-bonding on described encapsulated layer, and the difference between the optical index of described silica gel or resin and described photo-coupler is ± 0.5.

Preferably, described LED chip module comprises the power supply connecting lead wire that at least one LED luminescence chip and one end are electrically connected with described LED luminescence chip, and it is outer or be electrically connected with the tie point that its outer wall is provided with that the other end of described power supply connecting lead wire extends described high brightness LED optical coupling device.

The beneficial effect of employing the technical program is: adopt photo-coupler to be directly located at above described encapsulated layer, eliminate the clearance or glass etc. that affect coupling efficiency, substantially increase coupling efficiency simultaneously, due to the intervention of flexible package layer, direct connection it also avoid and damages LED chip module because of vibrations, substantially increases serviceable life.

Accompanying drawing explanation

Fig. 1 is the cut-open view of a kind of high brightness LED optical coupling device embodiment 1 of the present invention;

Fig. 2 is the schematic diagram of a kind of high brightness LED optical coupling device embodiment 2 of the present invention.

Numeral and the corresponding component title represented by letter in figure:

1. substrate 2.LED chip module 3. encapsulated layer 4. photo-coupler 5. bonding part 6. power supply connecting lead wire

Embodiment

Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.

Embodiment 1,

As shown in Figure 1, a kind of high brightness LED optical coupling device, the LED chip module 2 comprising substrate 1 and be installed on described substrate, also comprise the optically coupled device covered on described LED chip module, described optically coupled device comprises the encapsulated layer 3 encapsulating described LED chip module 2 and the photo-coupler 4 be directly located at above described encapsulated layer.

Described encapsulated layer 3 is resin or silica gel etc., and described photo-coupler 4 is optical wand, and the optical index of described optical wand is 1.56, and the optical index of described resin is 1.52, guarantees that the difference between described encapsulated layer 3 and the optical index of described photo-coupler is within ± 0.5.

Described optical wand is bonded on described encapsulated layer 3 by identical resin/silica gel, and overall close optical index ensures the coupling efficiency of whole coupling device, and whole light-emitting device brightness is effectively promoted.

Described LED chip module 2 comprises the power supply connecting lead wire 6 that at least one LED luminescence chip and one end are electrically connected with described LED luminescence chip, the other end of described power supply connecting lead wire 6 extends outside described high brightness LED optical coupling device, also can be electrically connected with the tie point that its outer wall is provided with.

Embodiment 2,

As shown in Figure 2, all the other are identical with embodiment 1, and difference is, the upper surface of described encapsulated layer 3 is concordant with the upper surface of described LED chip module 2.Therefore optical wand directly by resin bonding on LED chip module 2, reduce further the impact that brings of refractive index difference.

In above-described embodiment, encapsulated layer 3 can also be quartz.Photo-coupler 4 can also be optical fiber.

Photo-coupler 4 can also use silica gel with the bonding agent of encapsulated layer 3, and the difference between the optical index of described silica gel and described photo-coupler is ± 0.5.

Wherein, the efficient lighting area of described LED chip module 2 is equal to or less than the xsect of described photo-coupler 4, and namely the vertical projection of described photo-coupler 4 covers whole light-emitting areas of described LED chip module 2.

The beneficial effect of employing the technical program is: adopt photo-coupler to be directly located at above described encapsulated layer, eliminate the clearance or glass etc. that affect coupling efficiency, substantially increase coupling efficiency, direct connection it also avoid and damages LED chip module because of vibrations, substantially increases serviceable life.

Above-described is only the preferred embodiment of the present invention, it should be pointed out that for the person of ordinary skill of the art, and without departing from the concept of the premise of the invention, can also make some distortion and improvement, these all belong to protection scope of the present invention.

Claims

1. a high brightness LED optical coupling device, comprise substrate and be installed on the LED chip module on described substrate, it is characterized in that, also comprise the optically coupled device covered on described LED chip module, described optically coupled device comprises the encapsulated layer encapsulating described LED chip module and the photo-coupler be directly located at above described encapsulated layer, the efficient lighting area of described LED chip module is equal to or less than the xsect of described photo-coupler, namely the vertical projection of described photo-coupler covers whole light-emitting areas of described LED chip module, and described photo-coupler is optical wand.

2. high brightness LED optical coupling device according to claim 1, is characterized in that, the difference between the optical index of described encapsulated layer and described photo-coupler is ± 0.5.

3. high brightness LED optical coupling device according to claim 1, is characterized in that, the upper surface of described encapsulated layer is concordant with the upper surface of described LED chip module.

4. high brightness LED optical coupling device according to claim 2, is characterized in that, described encapsulated layer is resin or silica gel.

5. high brightness LED optical coupling device according to claim 2, is characterized in that, described photo-coupler is also optical fiber.

6. according to the arbitrary described high brightness LED optical coupling device of claim 1 to 5, it is characterized in that, described photo-coupler is by silica gel or resin-bonding on described encapsulated layer, and the difference between the optical index of described silica gel or resin and described photo-coupler is ± 0.5.

7. high brightness LED optical coupling device according to claim 6, it is characterized in that, described LED chip module comprises the power supply connecting lead wire that at least one LED luminescence chip and one end are electrically connected with described LED luminescence chip, and it is outer or be electrically connected with the tie point that its outer wall is provided with that the other end of described power supply connecting lead wire extends described high brightness LED optical coupling device.