CN102539476A - Simple testing method for light resistor penetration effects - Google Patents
Simple testing method for light resistor penetration effects Download PDFInfo
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- CN102539476A CN102539476A CN2011103080004A CN201110308000A CN102539476A CN 102539476 A CN102539476 A CN 102539476A CN 2011103080004 A CN2011103080004 A CN 2011103080004A CN 201110308000 A CN201110308000 A CN 201110308000A CN 102539476 A CN102539476 A CN 102539476A
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Abstract
The invention discloses a simple testing method for light resistor penetration effects, which comprises a wafer and comprises the steps of firstly detecting the wafer with a thermal wave meter to detect lattice damage degree of the wafer; then covering a light resistor on the wafer, and sending the wafer covered by the light resistor to an ion implantation machine to be implanted; and finally removing the light resistor on the surface of the wafer through wet etching and dry etching, and detecting the water with the thermal wave meter again. The simple testing method only takes one day to test light resistor penetration effects. Compared with the prior art with a week as one testing period, development period is greatly shortened. Wafers with increasingly damaged lattice caused by light resistor penetration can be repaired through a thermal annealing method, thereby achieving recycling and saving consumption of wafers.
Description
Technical field
The present invention relates to a kind of technical field of manufacturing semiconductors, relate in particular to the easily-testing method that a kind of photoresistance penetrates effect.
Background technology
Scattering that photoresistance thickness causes and edge effect have reduced the characteristic dimension of semiconductor devices, and along with integrated circuit fabrication process makes great efforts to catch up with the paces of Moore's Law, it is more and more obvious to reduce photoresistance depth-width ratio role in semiconductor technology.The attenuate of photoresistance has brought the problem of series of process aspect again, wherein the most significantly is exactly the penetrability that photoresistance injects at ion.
Usually, the degree of depth-CONCENTRATION DISTRIBUTION of in production process of semiconductor, directly using vertical non-static state (LSS) theory and test rules for inventory management to calculate the ion injection is selected the thickness of photoresistance, but finds that in actual use result of calculation and actual result differ greatly.The photoresistance thickness of often selecting according to result of calculation finds but that in final circuit analysis injecting ion has penetrated photoresistance and influenced the device electrical parameter.Along with the increase of the attenuate and the implantation dosage of photoresistance, it is more and more frequent that the deviation of this result of calculation and experimental result becomes.Effectively detection method is to test the photoresistance penetrability through setting up a technological process of simplifying at present; This flow process comprises that shallow trench isolation, photoresistance covering, ion injection, photoresistance etching, thermal annealing, metal lead wire insert, and final electric parameter detecting.In a single day wafer to be tested was proved to be photoresistance and just penetrated and can't reuse near a week the whole cycle, how to test photoresistance fast and effectively and penetrated effect and become us to press for a difficult problem of solution.
Summary of the invention
The easily-testing method that the present invention provides a kind of photoresistance to penetrate effect penetrates the long problem of effect required time in order to solve existing test photoresistance.
To achieve these goals, the technical scheme taked of the present invention is:
A kind of photoresistance penetrates the easily-testing method of effect, wherein, includes a wafer; At first said wafer being carried out the heat wave appearance surveys; Detect the lattice damage degree of said wafer, on said wafer, cover photoresistance then, and the said wafer that will be coated with said photoresistance is delivered to ion implantation apparatus and injected; With wet etching and dry etching said wafer is removed surperficial photoresistance at last, and survey said wafer once more with the heat wave appearance.
Above-mentioned photoresistance penetrates the easily-testing method of effect, and wherein, the thickness of said photoresistance obtains an initial value through non-static theory.
Above-mentioned photoresistance penetrates the easily-testing method of effect, and wherein, said photoresistance directly overlays on the whole said wafer, saves extra light shield with this.
Above-mentioned photoresistance penetrates the easily-testing method of effect, and wherein, said wafer injects through uniform ion.
Above-mentioned photoresistance penetrates the easily-testing method of effect, and wherein, if the lattice damage degree of said wafer obviously increases, then surperficial said photoresistance is penetrated, reselects photoresistance thickness.
Above-mentioned photoresistance penetrates the easily-testing method of effect, and wherein, the said wafer that is injected into ion is repaired through the mode of thermal annealing, to reuse.
Above-mentioned photoresistance penetrates the easily-testing method of effect, wherein, if the lattice damage degree of said wafer does not have significant change, proves that then the thickness of said photoresistance can blocks ions penetrate.
The present invention is owing to adopted above-mentioned technology, and the good effect that makes it to have is:
Whole flow process only needs one day time can test out the effect that photoresistance penetrates, and needs test period in a week than prior art, has shortened the construction cycle greatly.And penetrate for photoresistance and to cause the wafer that the lattice damage degree increases can be through the method reparation of thermal annealing, thereby reached recycling, saved the loss of wafer.
Description of drawings
Fig. 1 is the process flow diagram that a kind of photoresistance of the present invention penetrates the easily-testing method of effect;
Fig. 2 is that a kind of photoresistance of the present invention penetrates the synoptic diagram that wafer in the easily-testing method of effect covers photoresistance;
Fig. 3 is that a kind of photoresistance of the present invention penetrates the synoptic diagram that the wafer ion injects in the easily-testing method of effect.
Embodiment
Provide the embodiment that a kind of photoresistance of the present invention penetrates the easily-testing method of effect below in conjunction with accompanying drawing.
Fig. 1 penetrates the process flow diagram of the easily-testing method of effect for a kind of photoresistance of the present invention; Fig. 2 penetrates the synoptic diagram that wafer in the easily-testing method of effect covers photoresistance for a kind of photoresistance of the present invention; Fig. 3 sees also Fig. 1 to shown in Figure 3 for a kind of photoresistance of the present invention penetrates the synoptic diagram that the wafer ion injects in the easily-testing method of effect.A kind of photoresistance of the present invention penetrates the easily-testing method of effect, includes a wafer 1, at first this wafer 1 is carried out the heat wave appearance and surveys, and detects the lattice damage degree of wafer 1 through the heat wave appearance; On the surface of wafer 1, cover resistance 2 then, and the wafer 1 that will be coated with resistance 2 is sent to ion implantation apparatus, the wafer 1 that is coated with resistance 2 carried out the injection of ion through ion implantation apparatus; With the method for wet etching and dry etching wafer 1 is removed the resistance 2 on surface at last, and reuse the lattice damage degree that the heat wave appearance is surveyed wafer 1, the injury tolerance of wafer 1 injury tolerance that detects for the first time with the wafer 1 that detects for the second time compared.
The present invention also has following embodiment on above-mentioned basis:
Please continue referring to Fig. 1 to shown in Figure 3.In the further embodiment of the present invention, on the substrate of wafer 1, be coated with resistance 2, resistance 2 can produce on wafer 1 surface has thickness, and the thickness of this resistance 2 can obtain an initial value through non-static state (LSS) theory.
In the further embodiment of the present invention, see also Fig. 2 and shown in Figure 3.Resistance 2 is directly overlayed on the whole wafer 1, cover the setting of adding extra light shield on wafer 1 surface to save through this.After accomplishing the step that covers resistance 2, then deliver to ion implantation apparatus to the wafer that is coated with resistance 21 again, make it possible to inject on the wafer 1 through uniform ion 3.
Among the further embodiment of the present invention; Remove the resistance 2 on wafer 1 surface respectively with the method for wet etching and dry etching; This wafer 1 is delivered to the lattice damage degree detection that the heat wave appearance carries out wafer 1, and the injury tolerance of wafer 1 injury tolerance that detects for the first time with the wafer 1 of the detection second time compared.Obviously increase if the lattice damage degree of wafer 1 is compared wafer 1 injury tolerance that detects for the first time, then the surperficial photoresistance 2 of wafer 1 is penetrated, on wafer 1 substrate, cover resistance 2 again, and selective light hinders 2 thickness again.And the wafer 1 that is injected into ion 3 can be reused after repairing through the mode of thermal annealing, thereby it can be reused, and has saved the loss of wafer 1.Do not have significant change if the lattice damage degree of wafer 1 is compared the injury tolerance of the wafer 1 that detects for the first time, prove that then the thickness of photoresistance 2 can blocks ions 3 penetrate, make the thickness of this step and resistance 2 be suitable as the technological process use.
In sum, use a kind of photoresistance of the present invention to penetrate the easily-testing method of effect, whole flow process only needs one day time can test out the effect that photoresistance penetrates, and needs test period in a week than prior art, has shortened the construction cycle greatly.And penetrate for photoresistance and to cause the wafer that the lattice damage degree increases can be through the method reparation of thermal annealing, thereby reached recycling, saved the loss of wafer.
More than specific embodiment of the present invention is described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, method of wherein not describing in detail to the greatest extent and processing procedure are construed as with the common mode in this area to be implemented; Those skilled in the art can make various distortion or modification within the scope of the claims, and this does not influence flesh and blood of the present invention.All any modifications of within spirit of the present invention and principle, being done, be equal to replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a photoresistance penetrates the easily-testing method of effect, it is characterized in that, includes a wafer; At first said wafer being carried out the heat wave appearance surveys; Detect the lattice damage degree of said wafer, on said wafer, cover photoresistance then, and the said wafer that will be coated with said photoresistance is delivered to ion implantation apparatus and injected; With wet etching and dry etching said wafer is removed surperficial photoresistance at last, and survey said wafer once more with the heat wave appearance.
2. penetrate the easily-testing method of effect according to the said photoresistance of claim 1, it is characterized in that the thickness of said photoresistance obtains an initial value through non-static theory.
3. penetrate the easily-testing method of effect according to the said photoresistance of claim 1, it is characterized in that said photoresistance directly overlays on the whole said wafer, saves extra light shield with this.
4. penetrate the easily-testing method of effect according to the said photoresistance of claim 1, it is characterized in that, said wafer injects through uniform ion.
5. penetrate the easily-testing method of effect according to the said photoresistance of claim 1, it is characterized in that, if the lattice damage degree of said wafer obviously increases, then surperficial said photoresistance is penetrated, reselects photoresistance thickness.
6. penetrate the easily-testing method of effect according to the said photoresistance of claim 5, it is characterized in that the said wafer that is injected into ion is repaired through the mode of thermal annealing, to reuse.
7. penetrate the easily-testing method of effect according to the said photoresistance of claim 1, it is characterized in that,, prove that then the thickness of said photoresistance can blocks ions penetrate if the lattice damage degree of said wafer does not have significant change.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103080004A CN102539476A (en) | 2011-10-12 | 2011-10-12 | Simple testing method for light resistor penetration effects |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103080004A CN102539476A (en) | 2011-10-12 | 2011-10-12 | Simple testing method for light resistor penetration effects |
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| CN102539476A true CN102539476A (en) | 2012-07-04 |
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| CN2011103080004A Pending CN102539476A (en) | 2011-10-12 | 2011-10-12 | Simple testing method for light resistor penetration effects |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412819A (en) * | 2001-10-18 | 2003-04-23 | 帆宣系统科技股份有限公司 | Application of metal cover in IC preparation process |
| CN1822314A (en) * | 2005-01-05 | 2006-08-23 | 台湾积体电路制造股份有限公司 | Novel wafer repair method and system using direct-writing |
| KR100875162B1 (en) * | 2007-06-26 | 2008-12-22 | 주식회사 동부하이텍 | Blocking method of ion implantation |
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2011
- 2011-10-12 CN CN2011103080004A patent/CN102539476A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412819A (en) * | 2001-10-18 | 2003-04-23 | 帆宣系统科技股份有限公司 | Application of metal cover in IC preparation process |
| CN1822314A (en) * | 2005-01-05 | 2006-08-23 | 台湾积体电路制造股份有限公司 | Novel wafer repair method and system using direct-writing |
| KR100875162B1 (en) * | 2007-06-26 | 2008-12-22 | 주식회사 동부하이텍 | Blocking method of ion implantation |
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Application publication date: 20120704 |