CN102522433B - Cell piece possessing back reflection layer and manufacturing method thereof - Google Patents
Cell piece possessing back reflection layer and manufacturing method thereof Download PDFInfo
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- CN102522433B CN102522433B CN201110438900.0A CN201110438900A CN102522433B CN 102522433 B CN102522433 B CN 102522433B CN 201110438900 A CN201110438900 A CN 201110438900A CN 102522433 B CN102522433 B CN 102522433B
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- sio
- reflector
- cell piece
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- metal level
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a cell piece possessing a back reflection layer. A back side of a silicon substrate of the cell piece is provided with a SiOx reflecting layer, an Al metal layer and a local aluminum back field. The SiOx reflecting layer is directly connected to the back side of the silicon substrate. The Al metal layer is arranged on an external surface of the SiOx reflecting layer. The local aluminum back field passes through the SiOx reflecting layer so that the silicon substrate is connected with the Al metal layer. The cell piece of the invention can generate above 95% extremely strong reflex to long wave light with a 900-1100 wavelength. Absorption of cell to the long wave light can be increased. Composite of a cell back surface can be reduced. Cell efficiency can be increased. The cell piece is beneficial to thinning of a crystalline silicon solar cell. Simultaneously, a production technology is simple and easy. The production can be achieved by using a current cell production line. The method is very suitable for industrialization development.
Description
Technical field
The present invention relates to a kind of cell piece with back reflection layer and preparation method thereof.
Background technology
In recent years, in order to reduce the cost of solar cell, the thickness of silicon chip constantly reduces, from 350 initial μ m to 270,240,220,180 μ m, and in the future even can be to thinner future development.Silicon wafer thickness attenuate, the diffusion length of minority carrier may approach or be greater than the thickness of silicon chip, and part minority carrier will be diffused into cell backside and produce compoundly, and this will cause very large impact on battery efficiency.Meanwhile, below silicon wafer thickness is reduced to 200 μ m time, longwave optical (wavelength 900～1100nm) absorbs and reduces, not only battery efficiency reduces, also can increase the temperature of backplate contact point, shadow battery rings the life-span, so need battery to have good back reflection performance.For industrialization battery, its thickness is 180～200 μ m, and the longwave optical that a part can be utilized is not absorbed because of transmission, if can be reflected back inside battery, the efficiency of battery also will get a promotion.
At present, increasing overleaf reflector is a kind of effective ways that improve battery efficiency, wherein, Al metal level is one of known backside reflection layer, this reflective layer reflects rate is limited, and angle of reflection is bigger than normal, effectively absorbs within the scope of wide spectrum at solar cell absorbed layer, cause considerable photon not to be fully absorbed, and reflex to outside battery.Also someone has developed a kind of backside reflection layer of three-dimensional, for the photonic crystal of the orderly Al-Doped ZnO of three-dimensional macropore, can realize 600-1000nm visible light wave range 80% and above reflectivity, thereby increase photoelectric conversion efficiency, but this three-dimensional back reflection layer needed raw material is more, and production process is comparatively complicated, production cost is improved, be unfavorable for large the carrying out producing.
Summary of the invention
The object of the present invention is to provide a kind of cell piece with back reflection layer, and preparation method thereof.
The invention provides a kind of cell piece with back reflection layer, the silicon base back side of this cell piece is provided with SiO
xreflector, Al metal level, local aluminium back surface field; Wherein, SiO
xreflector is directly connected to the silicon base back side, and Al metal level is arranged on SiO
xthe outer surface in reflector, local aluminium back surface field is through SiO
xreflector is connected silicon base with Al metal level.
Wherein, SiO
xthe thickness in reflector is 85-95nm.
Further, SiO
xthe thickness in reflector is 90nm.
Wherein, the thickness of Al metal level is 0.7-1.3 μ m.
Further, the thickness of Al metal level is 1 μ m.
Wherein, local aluminium back surface field area coverage is overleaf 5%-10%.
The present invention also provides the preparation method of above-mentioned cell piece, and it comprises the steps:
A, get the silicon chip of preparing front antireflective coating, first at its backside deposition one deck SiO
xreflector;
B, at SiO
xon reflector, print aluminium paste, republish after front electrode, sintering, forms local aluminium back surface field;
C, at SiO
xafter the plated surface last layer Al metal level of reflector, obtain having the cell piece of back reflection layer.
Further, in steps A, SiO
xthe thickness in reflector is 85-95nm; In step B, the area coverage overleaf of local aluminium back surface field is 5%-10%; In step C, the thickness of Al metal level is 0.7-1.3 μ m.
Further, in steps A, SiO
xthe thickness in reflector is 90nm; In step C, the thickness of Al metal level is 1 μ m.
Further preferably, in step C, adopt vapour deposition method at SiO
xreflector plated surface last layer Al metal level.
Cell piece of the present invention, can produce more than 95% extremely strong reflection to the longwave optical of wavelength 900～1100nm, strengthen the absorption of battery to longwave optical, reduce the compound of battery back of the body surface, promoted battery efficiency, be conducive to the thinning of crystal-silicon solar cell, simultaneously, the production technology of this cell piece is simple, Yi Hang, utilizes existing production line for manufacturing battery just can produce, very applicable industrialized development.
Brief description of the drawings
The structural scheme of mechanism of Fig. 1 cell piece of the present invention;
Wherein, 1-silicon base, 2-SiO
xreflector, 3-Al metal level, 4-local aluminium back surface field.
Embodiment
The preparation method of embodiment 1 cell piece of the present invention
Get the silicon chip that prepares front antireflective coating, at its back side, PECVD prepares the SiO that 90nm is thick
xreflector; Silk screen printing aluminium paste, is spot distribution, and the area contacting with silicon chip back side accounts for 10% of the whole back side, republishes front electrode, and sintering forms local aluminium back surface field; Then,, at surface, SiOx reflector evaporation one deck Al metal level, thickness is 1 μ m, must have the cell piece of backside reflection layer.
The preparation method of embodiment 2 cell pieces of the present invention
Get the silicon chip that prepares front antireflective coating, at its back side, PECVD prepares the SiO that 90nm is thick
xreflector; Silk screen printing aluminium paste, is net distribution, and the area contacting with silicon chip back side accounts for 5% of the whole back side, republishes front electrode, and sintering forms local aluminium back surface field; Then, at SiO
xsurface, reflector evaporation one deck Al metal level, thickness is 1 μ m, must have the cell piece of backside reflection layer.
The preparation method of embodiment 3 cell pieces of the present invention
Get the silicon chip that prepares front antireflective coating, at its back side, PECVD prepares the SiO that 85nm is thick
xreflector; Silk screen printing aluminium paste, is net distribution, and the area contacting with silicon chip back side accounts for 6% of the whole back side, republishes front electrode, and sintering forms local aluminium back surface field; Then, at SiO
xsurface, reflector evaporation one deck Al metal level, thickness is 0.7 μ m, must have the cell piece of backside reflection layer.
The preparation method of embodiment 4 cell pieces of the present invention
Get the silicon chip that prepares front antireflective coating, at its back side, PECVD prepares the SiO that 95nm is thick
xreflector; Silk screen printing aluminium paste, is wire and distributes, and the area contacting with silicon chip back side accounts for 8% of the whole back side, republishes front electrode, and sintering forms local aluminium back surface field; Then, at SiO
xsurface, reflector evaporation one deck Al metal level, thickness is 1.3 μ m, must have the cell piece of backside reflection layer.
In the present invention, adopt SiO
xwith Al metal level dual layer reflection film structure, in the situation that having specific thicknesses, can there be more than 95% extremely strong reflection in this reflector to the longwave optical of AM1.5 (wavelength 900～1100nm), improves the photoelectric conversion rate of battery; Meanwhile, SiO
xthere is good passivation effect, can also be carried on the back preferably surface passivation to the battery that does not carry out passivating back, without preparing again passivating back film, be applicable to the thinning trend of crystal-silicon solar cell; And, adopt coverage rate in 5%～10% point-like, wire or netted local aluminium back surface field, it and Al metal level are in conjunction with can, directly as backplate, without republishing backplate, having saved production process.
Meanwhile, through optical simulation simulation, SiO
xthickness in the time of 90nm left and right, reflecting effect is better, the preferred 90nm of the present invention; SiO
xbe the oxide of Si, sedimentary condition difference, its component ratio is also slightly different, but main component or SiO2 are less for reflectivity impact, through experiment contrast, find that the reflectivity in reflector in the present invention is mainly subject to thickness effect.
In the present invention, at SiO
xwhen reflector plated surface Al metal level, evaporation process has avoided aluminium back surface field technique to SiO
x(most of aluminium paste can corrode SiO for film corrosion-damaged
x), be a kind of improvement project, in the present invention, adopt evaporating Al metal level best results; And, in the time that the thickness of Al metal level is larger, its back reflection rate is higher, but can cause the rising of cost, and that thickness reduces is cost-saved, but the too thin electric current that can affect is again derived and back reflection rate, therefore, the thickness of Al metal level is arranged on 1 μ m by the present invention, the experiment proved that, this setting can meet good back reflection rate and electric current is derived efficiency, and cost is relatively low again.
And find for the research of local aluminium back surface field, its coverage rate exceedes after this scope of 5-10%, and string resistance is higher, and current loss is larger, therefore, the preferred 5-10% of local aluminium back surface field coverage rate of the present invention.
In sum, cell piece of the present invention, can produce more than 95% extremely strong reflection to the longwave optical of wavelength 900～1100nm, strengthen the absorption of battery to longwave optical, reduce the compound of battery back of the body surface, promote battery efficiency, be conducive to the thinning of crystal-silicon solar cell, meanwhile, its production technology is simple, Yi Hang, utilize existing production line for manufacturing battery just can produce, be applicable to very much industrialized development.
Claims (6)
1. a cell piece with back reflection layer, is characterized in that: silicon base (1) back side of this cell piece is provided with SiO
xreflector (2), Al metal level (3), local aluminium back surface field (4); Wherein, SiO
xreflector (2) directly and silicon base (1) back side join, Al metal level (3) is arranged on SiO
xthe outer surface in reflector (2), local aluminium back surface field (4) is through SiO
xreflector (2) is connected silicon base (1) with Al metal level (3), SiO
xthe thickness in reflector (2) is 85-95nm, and the thickness of Al metal level (3) is 0.7-1.3 μ m, and local aluminium back surface field (4) area coverage is overleaf 5%-10%.
2. cell piece according to claim 1, is characterized in that: SiO
xthe thickness in reflector (2) is 90nm.
3. cell piece according to claim 1, is characterized in that: the thickness of Al metal level (3) is 1 μ m.
4. the preparation method of the cell piece described in claim 1-3 any one, is characterized in that: it comprises the steps:
A, get the silicon chip of preparing front antireflective coating, first at its backside deposition one deck SiO
xreflector;
B, at SiO
xon reflector, print aluminium paste, republish after front electrode, sintering, forms local aluminium back surface field;
C, employing vapour deposition method are at SiO
xafter the plated surface last layer Al metal level of reflector, obtain having the cell piece of back reflection layer.
5. preparation method according to claim 4, is characterized in that: in steps A, and SiO
xthe thickness in reflector is 85-95nm; In step B, the area coverage overleaf of local aluminium back surface field is 5%-10%; In step C, the thickness of Al metal level is 0.7-1.3 μ m.
6. preparation method according to claim 5, is characterized in that: in steps A, and SiO
xthe thickness in reflector is 90nm; In step C, the thickness of Al metal level is 1 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110438900.0A CN102522433B (en) | 2011-12-23 | 2011-12-23 | Cell piece possessing back reflection layer and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110438900.0A CN102522433B (en) | 2011-12-23 | 2011-12-23 | Cell piece possessing back reflection layer and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102522433A CN102522433A (en) | 2012-06-27 |
| CN102522433B true CN102522433B (en) | 2014-09-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110438900.0A Expired - Fee Related CN102522433B (en) | 2011-12-23 | 2011-12-23 | Cell piece possessing back reflection layer and manufacturing method thereof |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916060B (en) * | 2012-11-05 | 2014-11-26 | 南开大学 | Silicon-based thin-film solar cell and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5620530A (en) * | 1994-08-24 | 1997-04-15 | Canon Kabushiki Kaisha | Back reflector layer, method for forming it, and photovoltaic element using it |
| JP2000174304A (en) * | 1998-09-28 | 2000-06-23 | Sharp Corp | Solar battery for outer space |
| CN101540350B (en) * | 2009-04-30 | 2010-07-28 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
| WO2011140355A2 (en) * | 2010-05-07 | 2011-11-10 | Applied Materials, Inc. | Oxide nitride stack for backside reflector of solar cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010118418A2 (en) * | 2009-04-10 | 2010-10-14 | Lightwave Power, Inc. | Planar plasmonic device for light reflection, diffusion and guiding |
-
2011
- 2011-12-23 CN CN201110438900.0A patent/CN102522433B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5620530A (en) * | 1994-08-24 | 1997-04-15 | Canon Kabushiki Kaisha | Back reflector layer, method for forming it, and photovoltaic element using it |
| JP2000174304A (en) * | 1998-09-28 | 2000-06-23 | Sharp Corp | Solar battery for outer space |
| CN101540350B (en) * | 2009-04-30 | 2010-07-28 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
| WO2011140355A2 (en) * | 2010-05-07 | 2011-11-10 | Applied Materials, Inc. | Oxide nitride stack for backside reflector of solar cell |
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| CN102522433A (en) | 2012-06-27 |
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