CN102508376B - 液晶显示面板以及其制造方式 - Google Patents
液晶显示面板以及其制造方式 Download PDFInfo
- Publication number
- CN102508376B CN102508376B CN201110419814.5A CN201110419814A CN102508376B CN 102508376 B CN102508376 B CN 102508376B CN 201110419814 A CN201110419814 A CN 201110419814A CN 102508376 B CN102508376 B CN 102508376B
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- China
- Prior art keywords
- layer
- tft
- film transistor
- thin film
- glass substrate
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims description 41
- 239000011521 glass Substances 0.000 claims description 38
- 238000009413 insulation Methods 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 239000012780 transparent material Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 abstract description 21
- 230000002265 prevention Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003467 diminishing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110419814.5A CN102508376B (zh) | 2011-12-15 | 2011-12-15 | 液晶显示面板以及其制造方式 |
US13/380,879 US20130155353A1 (en) | 2011-12-15 | 2011-12-19 | LCD Panel and Manufacturing Method Thereof |
PCT/CN2011/084183 WO2013086746A1 (zh) | 2011-12-15 | 2011-12-19 | 液晶显示面板以及其制造方式 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110419814.5A CN102508376B (zh) | 2011-12-15 | 2011-12-15 | 液晶显示面板以及其制造方式 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102508376A CN102508376A (zh) | 2012-06-20 |
CN102508376B true CN102508376B (zh) | 2014-07-16 |
Family
ID=46220479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110419814.5A Active CN102508376B (zh) | 2011-12-15 | 2011-12-15 | 液晶显示面板以及其制造方式 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102508376B (zh) |
WO (1) | WO2013086746A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104157612A (zh) * | 2014-08-21 | 2014-11-19 | 深圳市华星光电技术有限公司 | Tft阵列基板的制作方法及tft阵列基板结构 |
CN107003569A (zh) * | 2014-11-20 | 2017-08-01 | 夏普株式会社 | 液晶显示装置以及其制造方法 |
CN104503127B (zh) * | 2014-12-01 | 2017-10-13 | 深圳市华星光电技术有限公司 | 阵列基板及其制作方法 |
CN105842929B (zh) * | 2015-01-12 | 2020-12-29 | 群创光电股份有限公司 | 显示装置 |
CN104749816B (zh) | 2015-04-14 | 2017-11-10 | 京东方科技集团股份有限公司 | 一种显示基板的制作方法、显示基板和显示装置 |
CN105242468A (zh) * | 2015-10-27 | 2016-01-13 | 深圳市华星光电技术有限公司 | 减少寄生电容的液晶显示面板以及其制作方法 |
CN105869827B (zh) * | 2016-04-15 | 2018-02-23 | 无锡中微晶园电子有限公司 | 一种包含有金属、聚酰亚胺及阻挡层结构的器件单元体及制作方法 |
CN106249494A (zh) * | 2016-08-18 | 2016-12-21 | 深圳市华星光电技术有限公司 | 一种阵列基板及显示面板 |
CN106094360A (zh) * | 2016-08-22 | 2016-11-09 | 深圳市华星光电技术有限公司 | 曲面液晶显示面板 |
CN108333845A (zh) * | 2018-02-26 | 2018-07-27 | 武汉华星光电技术有限公司 | 阵列基板、显示面板以及阵列基板的制作方法 |
CN112785917B (zh) * | 2019-11-04 | 2023-10-10 | 群创光电股份有限公司 | 电子装置 |
WO2023122925A1 (zh) * | 2021-12-28 | 2023-07-06 | 厦门市芯颖显示科技有限公司 | 一种显示装置及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101067705A (zh) * | 2007-07-03 | 2007-11-07 | 友达光电股份有限公司 | 液晶显示器的像素结构及其制造方法 |
CN101257031A (zh) * | 2003-07-31 | 2008-09-03 | 奇美电子股份有限公司 | 薄膜晶体管阵列基板及薄膜晶体管阵列基板的制作方法 |
CN101334564A (zh) * | 2007-06-28 | 2008-12-31 | 上海广电Nec液晶显示器有限公司 | 一种液晶显示装置及其制造方法 |
CN101409263A (zh) * | 2008-12-02 | 2009-04-15 | 友达光电股份有限公司 | 像素结构、显示面板以及光电装置的制造方法 |
CN101494202A (zh) * | 2008-05-21 | 2009-07-29 | 友达光电股份有限公司 | 薄膜晶体管阵列基板与液晶显示面板的制作方法 |
-
2011
- 2011-12-15 CN CN201110419814.5A patent/CN102508376B/zh active Active
- 2011-12-19 WO PCT/CN2011/084183 patent/WO2013086746A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101257031A (zh) * | 2003-07-31 | 2008-09-03 | 奇美电子股份有限公司 | 薄膜晶体管阵列基板及薄膜晶体管阵列基板的制作方法 |
CN101334564A (zh) * | 2007-06-28 | 2008-12-31 | 上海广电Nec液晶显示器有限公司 | 一种液晶显示装置及其制造方法 |
CN101067705A (zh) * | 2007-07-03 | 2007-11-07 | 友达光电股份有限公司 | 液晶显示器的像素结构及其制造方法 |
CN101494202A (zh) * | 2008-05-21 | 2009-07-29 | 友达光电股份有限公司 | 薄膜晶体管阵列基板与液晶显示面板的制作方法 |
CN101409263A (zh) * | 2008-12-02 | 2009-04-15 | 友达光电股份有限公司 | 像素结构、显示面板以及光电装置的制造方法 |
Non-Patent Citations (1)
Title |
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附图3I. |
Also Published As
Publication number | Publication date |
---|---|
CN102508376A (zh) | 2012-06-20 |
WO2013086746A1 (zh) | 2013-06-20 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210311 Address after: No.109, Kangping Road, Liuyang economic and Technological Development Zone, Changsha, Hunan 410300 Patentee after: Changsha Huike optoelectronics Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL China Star Optoelectronics Technology Co.,Ltd. |