CN102508376B - 液晶显示面板以及其制造方式 - Google Patents

液晶显示面板以及其制造方式 Download PDF

Info

Publication number
CN102508376B
CN102508376B CN201110419814.5A CN201110419814A CN102508376B CN 102508376 B CN102508376 B CN 102508376B CN 201110419814 A CN201110419814 A CN 201110419814A CN 102508376 B CN102508376 B CN 102508376B
Authority
CN
China
Prior art keywords
layer
tft
film transistor
thin film
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110419814.5A
Other languages
English (en)
Other versions
CN102508376A (zh
Inventor
马小龙
黄宏基
陈孝贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changsha HKC Optoelectronics Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201110419814.5A priority Critical patent/CN102508376B/zh
Priority to US13/380,879 priority patent/US20130155353A1/en
Priority to PCT/CN2011/084183 priority patent/WO2013086746A1/zh
Publication of CN102508376A publication Critical patent/CN102508376A/zh
Application granted granted Critical
Publication of CN102508376B publication Critical patent/CN102508376B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136222Colour filters incorporated in the active matrix substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明公开一种液晶显示面板结构以及其相关的制造方式,其应用于COA的制程,本发明液晶显示面板使用基板的金属层来阻挡光线,以达到防止混色与漏光的目的,因此,本发明的金属层可以用来取代习知黑色矩阵层的功能,这样可以省去一道黑色矩阵的制程,如此可以使制程更加简易,不但提升了良率,并且进一步地降低了成本。

Description

液晶显示面板以及其制造方式
技术领域
本发明涉及一种液晶显示面板以及其相关制造方式,尤指一种利用金属层来取代习知黑色矩阵层的液晶显示面板以及相关制造方式。
背景技术
功能先进的显示器渐成为现今消费电子产品的重要特色,其中液晶显示器已经逐渐成为各种电子设备如移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕所广泛应用具有高分辨率彩色屏幕的显示器。
传统的液晶显示面板是由一彩色滤光基板(color filter)、一薄膜晶体管矩阵基板(thin film transistor array substrate,TFT array substrate)以及一配置于此两基板间的液晶层(liquid crystal layer)所构成。然而,此种液晶显示面板的分辨率(resolution)较差、像素(pixel)的开口率较低,且彩色滤光基板与薄膜晶体管矩阵基板接合时容易有对位误差(misalignment)。
近年来,更提出了将彩色滤光层直接整合于薄膜晶体管矩阵基板上(ColorFilter on Array,COA)或是将黑色矩阵层制作于薄膜晶体管矩阵基板上(Blackmatrix on Array,BOA)的技术,将COA基板或BOA基板与另一不具备彩色滤光层或黑矩阵层的对向基板组立,并于两基板间填入液晶分子,以形成液晶显示面板。由于彩色滤光层是仅直接形成于薄膜晶体管阵列基板上,因此不会产生对位误差。而且,此种液晶显示面板可具有较佳的分辨率且其像素的开口率亦较高。
请参阅图1,图1是现有技术液晶显示面板100的简易剖面图。如图1所示,液晶显示面板100为一BOA液晶显示面板,亦即,液晶显示面板100的玻璃基板110上,会直接制造彩色滤光层130。如图1所示,液晶显示面板100包含有玻璃基板110,黑色矩阵层120以及彩色滤光层130。
在此请注意,于图1之中,并未绘示彩色滤光层130与玻璃基板110间的金属层(用来构成数据线与扫描线)、绝缘层与保护层等等;然而,实际上液晶显示面板100会包含这些结构,且其功能与结构也以为业界所习知,为了简便说明,便不另赘述于此。
请继续参阅图1,彩色滤光层130是用来进行滤光,使得通过彩色滤光层130后的光线为特定颜色的可见光。以本实施例来说,通过红、蓝、绿色滤光单元131、132、133的光线便分别为红光、蓝光、绿光。如此一来,将此三原色的光线加以混合,便可合成各种颜色的光,以显示欲呈现的影像。
此外,黑色矩阵层120位于各彩色滤光层130之间,是用来阻挡由背光模块发出的光,以防止光线错误地通过数个彩色滤光层130,进而避免错误的混色以及漏光。
在此请参阅图2,图2是另一现有技术液晶显示面板200的简易剖面图。基本上,图2与图1的架构类似,两者具有相同标号的组件代表着彼此具有相同的功能与结构,故不另赘述。在此请注意,于图2之中,于彩色滤光层120之上,另沉积了一层透明材料层(overcoat)210,此透明材料层使得基板的高度差距变小,使基板更加平坦化,如此可减少由于基板的高度段差,造成液晶分子定向不良的情形,进而减少漏光的情形。
现今液晶显示面板是通过多道制程而大量生产。如果能减少黑色矩阵层的使用,将可以减少制程成本,而制造出更便宜的液晶显示面板。
发明内容
因此本发明的目的是提供一种液晶显示面板以及其相关制造方法,其使用金属层来取代习知黑色矩阵层的液晶显示面板以及相关制造方式,有利于减低成本并减少制程。
根据本发明的一实施例,本发明揭示一种液晶显示面板的制造方式,其应用于COA(color filter on array)的制程,所述制造方式包括下列步骤:提供一玻璃基板;所述制造方式另包含:形成一第一金属层于所述玻璃基板上,并蚀刻所述第一金属层,以形成一扫描线、一薄膜晶体管的栅极以及一储存电容的下电极;沉积一绝缘层于所述玻璃基板以及所述第一金属层上;于所述绝缘层上,沉积一主动层以及一欧姆接触层;蚀刻所述主动层以及所述欧姆接触层,以定义出所述薄膜晶体管,其中所述主动层作为所述薄膜晶体管的通道;于所述欧姆接触层以及所述绝缘层上沉积一第二金属层,并蚀刻所述第二金属层,以形成一数据线,并于所述欧姆接触层上定义出所述薄膜晶体管的源极与漏极;于所述第二金属层以及所述绝缘层上沉积一保护层;蚀刻所述保护层,以于所述薄膜晶体管的漏极上形成一第一开口,以及于所述储存电容的下电极的上方,形成一第二开口;于所述保护层上面沉积一彩色滤光层,并蚀刻所述彩色滤光层以形成多个滤光单元;以及于所述彩色滤光层上沉积一透明导电层,所述透明导电层藉由所述第一开口耦接至所述薄膜晶体管的漏极,并于所述第二开口形成所述储存电容的上电极,其中所述第一金属层与所述第二金属层可用来阻挡光线。
根据本发明的一实施例,所述制造方式另包含:于所述透明导电层之上另沉积一透明材料层。
根据本发明的一实施例,所述多个滤光单元包括红色滤光单元、绿色滤光单元以及蓝色滤光单元。
根据本发明的一实施例,本发明另提供一种液晶显示面板的制造方式,其应用于COA(color filter on array)的制程,所述制造方式包括下列步骤:提供一玻璃基板;所述制造方式另包含:形成一扫描线、一薄膜晶体管、一数据线以及一储存电容之下电极;沉积一保护层,并蚀刻所述保护层,以于所述薄膜晶体管的漏极上形成一第一开口,以及于所述储存电容的下电极的上方,形成一第二开口;于所述保护层上面沉积一彩色滤光层,并蚀刻所述彩色滤光层以形成多个滤光单元;以及于所述彩色滤光层上沉积一透明导电层,所述透明导电层藉由所述第一开口耦接至薄膜晶体管的漏极,并于所述第二开口形成所述储存电容的上电极;其中位于每两个相邻滤光单元之间的所述数据线或所述扫描线,其投影在所述玻璃基板的区域重叠于每两个相邻滤光单元投影在所述玻璃基板的区域。
根据本发明的一实施例,所述制造方式另包含:于所述透明导电层之上另沉积一透明材料层。
根据本发明的一实施例,所述多个滤光单元包括红色滤光单元、绿色滤光单元以及蓝色滤光单元。
根据本发明的一实施例,本发明又提供一种液晶显示面板,包含:一玻璃基板;一第一金属层,位于所述玻璃基板上,用来形成一扫描线、一薄膜晶体管的栅极、一储存电容之下电极以及一第一遮蔽区;一绝缘层,位于所述玻璃基板以及所述第一金属层上;一主动层,位于所述绝缘层上,用来作为所述薄膜晶体管的通道;一欧姆接触层,位于所述主动层上;一第二金属层,位于所述欧姆接触层以及所述绝缘层上,用来作为一数据线、薄膜晶体管的源极与漏极以及第二遮蔽区;一保护层,位于所述第二金属层以及所述绝缘层上;一彩色滤光层,位于所述保护层上,包含多个滤光单元,其中位于每两个相邻滤光单元之间的所述数据线或所述扫描线,其投影在所述玻璃基板的区域重叠于每两个相邻滤光单元投影在所述玻璃基板的区域;以及一透明导电层,位于所述彩色滤光层上,耦接至所述薄膜晶体管的漏极,用来作为所述储存电容的上电极;其中所述第一金属层与所述第二金属层可用来阻挡光线。
根据本发明的一实施例,所述液晶显示面板另包含:一透明材料层,位于所述透明导电层之上。
根据本发明的一实施例,所述多个滤光单元包括红色单元、绿色滤光单元以及蓝色滤光单元。
相较于现有技术,本发明利用作为数据线或是扫描线的金属层来取代传统的黑色矩阵层的功能,这样可以省去一道黑色矩阵的制程,如此可以使制程更加简易,不但提升了良率,并且进一步地降低了成本。
为让本发明的上述内容能更明显易懂,下文特举较佳实施例,并配合所附图式,作详细说明如下:
附图说明
图1是现有技术液晶显示面板的简易剖面图。
图2是另一现有技术液晶显示面板的简易剖面图。
图3是本发明一实施例的液晶显示面板的示意图。
图4A-4C~图9A-9C绘示图3所示液晶显示面板的制程方法。
具体实施方式
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施之特定实施例。本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」、「水平」、「垂直」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
请参阅图3,图3是本发明一实施例的液晶显示面板300的示意图。液晶显示面板300包括一玻璃基板310、多条扫描线SL、多条数据线DL、多个薄膜晶体管220、多个共通电极CL以及多个像素电极360。扫描线SL、数据线DL与薄膜晶体管220皆配置于玻璃基板310上,且扫描线SL与数据线DL交错排列出呈矩阵排列的像素区域。每一薄膜晶体管220电性连接至一像素电极360、一扫描线SL和一数据线DL。
请参阅图4A-4C,图4A-4C是图3的液晶显示面板300沿直线A-A’、B-B’、C-C’线段的剖面图。如图4A-4C所示,液晶显示面板300包含有玻璃基板310、绝缘层320、薄膜晶体管220、保护层340以及多个滤光单元350。液晶显示面板300是一COA液晶显示面板,亦即多个滤光单元350与薄膜晶体管220是形成于同一玻璃基板310之上。扫描线SL、薄膜晶体管220的栅极221以及共通电极CL位于玻璃基板310,且由同一第一金属层构成。绝缘层320位于玻璃基板310以及第一金属层上。主动层(active layer)541位于绝缘层320上,用来作为薄膜晶体管220的通道224。欧姆接触层542位于主动层541上。第二金属层位于欧姆接触层542以及绝缘层320上,用来作为数据线DL以及薄膜晶体管220的源极222与漏极223。保护层340位于第二金属层以及绝缘层320上。滤光单元350位于保护层340上。透明材料层(overcoat)460位于滤光单元350之上,用来将滤光单元350之上的区域更为平坦化,便于减少了因液晶分子倒向紊乱而产生的漏光。透明导电层360位于透明材料层460上,耦接至薄膜晶体管220的漏极223,用来作为储存电容的上电极。
多个滤光单元350包括红色滤光单元、蓝色滤光单元以及绿色滤光单元,分别用来滤光,以使通过的光线成为红光、蓝光与绿光,以合成出所须的影像。数据线DL与扫描线SL以相互垂直交错的方式,将液晶显示面板300分割为一像素矩阵。这些数据线DL与扫描线SL位于两个相邻的滤光单元350之间,而这些由金属构成的数据线DL与扫描线SL本身便具有阻挡光线的效用。此外,由于每一滤光单元350在形成时会形成一个近似梯形的斜角L,液晶分子会在这些斜角区域倒向(disclination)紊乱从而导致漏光不良。位于每两个相邻滤光单元350之间的数据线DL与扫描线SL,其投影在玻璃基板310的区域重叠于每两个相邻滤光单元350投影在玻璃基板310的区域。由于数据线DL与扫描线SL是金属构成,本身有良好的遮光效果,与滤光单元350形成交叠区域后,能防止滤光单元350之间的漏光并同时减少液晶分子倒向紊乱产生的漏光,也因此能同时抑制滤光单元350之间的混色。
在此请注意,本发明以数据线DL与扫描线SL来取代现有技术的黑色矩阵层的功能,使得本发明无须黑色矩阵层便能够达到防止漏光与混色的目的。换句话说,本发明可以省掉黑色矩阵层的制程,使得制程程序更为简便,如此不但能提升良率,亦可同时降低制造成本。
在此请参阅图4A-4C~图9A-9C,4A-4C~图9A-9C绘示了图3所示液晶显示面板300的制程方法。
首先请先参阅图5A-5C,如图5A-5C所示,首先在玻璃基板310上形成一第一金属层于玻璃基板310上,并蚀刻第一金属层,以形成扫描线SL、薄膜晶体管220的栅极221以及共通电极CL(也是作为储存电容的下电极)。
接着,如图6A-6C,沉积一绝缘层(insulating layer)320于玻璃基板310以及第一金属层上。接着,于绝缘层320上,沉积一主动层(active layer)541以及一欧姆接触层(n+layer)542,并蚀刻主动层541以及欧姆接触层542,以定义出薄膜晶体管的通道224。
请继续参阅图7A-7C,接着,于欧姆接触层542以及绝缘层320上沉积一第二金属层(M2)532,并蚀刻第二金属层,以形成数据线DL,并于欧姆接触层542上定义出薄膜晶体管220的源极222与漏极223。
请继续参阅图8A-8C,于欧姆接触层542以及绝缘层320上沉积一保护层(passivation layer)340;蚀刻保护层340,以于薄膜晶体管220的漏极223上形成一第一开口231,以及于共通电极CL的上方,形成一第二开口232。
请继续参阅图9A-9C,接着,于保护层340上面沉积一彩色滤光层,并蚀刻该彩色滤光层以形成多个滤光单元350。
请继续参阅图4A-4C,接着,于滤光单元350上沉积一透明材料层460。于透明材料层460上沉积一透明导电层360,透明导电层360藉由第一开口231耦接至薄膜晶体管220的漏极223。透明导电层360并于第二开口232之处形成储存电容的上电极。其中位于每两个相邻滤光单元350之间的数据线DL与扫描线SL,其投影在玻璃基板310的区域重叠于每两个相邻滤光单元350投影在玻璃基板310的区域。由于数据线DL与扫描线SL是金属构成,可用来阻挡光线。
至此,液晶显示面板300的制程已大致完毕,揭示至此,熟习此项技术者应可理解其后步骤,故不另赘述于此。
综上所述,虽然本发明已以较佳实施例揭示如上,但该较佳实施例并非用以限制本发明,该领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。

Claims (9)

1.一种液晶显示面板的制造方式,其应用于COA(color filter on array)的制程,所述制造方式包括下列步骤:提供一玻璃基板;其特征在于:所述制造方式另包含:
形成一第一金属层于所述玻璃基板上,并蚀刻所述第一金属层,以形成一扫描线、一薄膜晶体管的栅极以及一储存电容的下电极;
沉积一绝缘层于所述玻璃基板以及所述第一金属层上;
于所述绝缘层上,沉积一主动层以及一欧姆接触层;
蚀刻所述主动层以及所述欧姆接触层,其中所述主动层作为所述薄膜晶体管的通道;
于所述欧姆接触层以及所述绝缘层上沉积一第二金属层,并蚀刻所述第二金属层,以形成一数据线,并于所述欧姆接触层上定义出所述薄膜晶体管的源极与漏极;
于所述第二金属层以及所述绝缘层上沉积一保护层;
蚀刻所述保护层,以于所述薄膜晶体管的漏极上形成一第一开口,以及于所述储存电容的下电极的上方,形成一第二开口;
于所述保护层上面沉积一彩色滤光层,并蚀刻所述彩色滤光层以形成多个滤光单元;以及
于所述彩色滤光层上沉积一透明导电层,所述透明导电层藉由所述第一开口耦接至所述薄膜晶体管的漏极,并于所述第二开口形成所述储存电容的上电极,其中所述第一金属层与所述第二金属层可用来阻挡光线。
2.根据权利要求1所述的制造方式,其特征在于:所述制造方式另包含:
于所述透明导电层之上另沉积一透明材料层。
3.根据权利要求1所述的制造方式,其特征在于,所述多个滤光单元包括红色滤光单元、绿色滤光单元以及蓝色滤光单元。
4.一种液晶显示面板的制造方式,其应用于COA(color filter on array)的制程,所述制造方式包括下列步骤:提供一玻璃基板;其特征在于:所述制造方式另包含:
形成一扫描线、一薄膜晶体管、一数据线以及一储存电容之下电极;沉积一保护层,并蚀刻所述保护层,以于所述薄膜晶体管的漏极上形成
一第一开口,以及于所述储存电容的下电极的上方,形成一第二开口;
于所述保护层上面沉积一彩色滤光层,并蚀刻所述彩色滤光层以形成多个滤光单元;以及
于所述彩色滤光层上沉积一透明导电层,所述透明导电层藉由所述第一开口耦接至薄膜晶体管的漏极,并于所述第二开口形成所述储存电容的上电极;
其中位于每两个相邻滤光单元之间的所述数据线或所述扫描线,其投影在所述玻璃基板的区域重叠于每两个相邻滤光单元投影在所述玻璃基板的区域。
5.根据权利要求4所述的制造方式,其特征在于:所述制造方式另包含:
于所述透明导电层之上另沉积一透明材料层。
6.根据权利要求4所述的制造方式,其特征在于,所述多个滤光单元包括红色滤光单元、绿色滤光单元以及蓝色滤光单元。
7.一种液晶显示面板,其特征在于,包含:
一玻璃基板;
一第一金属层,位于所述玻璃基板上,用来形成一扫描线、一薄膜晶体管的栅极、一储存电容之下电极以及一第一遮蔽区;
一绝缘层,位于所述玻璃基板以及所述第一金属层上;
一主动层,位于所述绝缘层上,用来作为所述薄膜晶体管的通道;
一欧姆接触层,位于所述主动层上;
一第二金属层,位于所述欧姆接触层以及所述绝缘层上,用来作为一数据线、薄膜晶体管的源极与漏极以及第二遮蔽区;
一保护层,位于所述第二金属层以及所述绝缘层上;
一彩色滤光层,位于所述保护层上,包含多个滤光单元,其中位于每两个相邻滤光单元之间的所述数据线或所述扫描线,其投影在所述玻璃基板的区域重叠于每两个相邻滤光单元投影在所述玻璃基板的区域;
以及
一透明导电层,位于所述彩色滤光层上,耦接至所述薄膜晶体管的漏极,
用来作为所述储存电容的上电极;
其中所述第一金属层与所述第二金属层可用来阻挡光线。
8.根据权利要求7所述的液晶显示面板,其特征在于:所述液晶显示面板另包含:
一透明材料层,位于所述透明导电层之上。
9.根据权利要求7所述的液晶显示面板,其特征在于:所述多个滤光单元包括红色单元、绿色滤光单元以及蓝色滤光单元。
CN201110419814.5A 2011-12-15 2011-12-15 液晶显示面板以及其制造方式 Active CN102508376B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201110419814.5A CN102508376B (zh) 2011-12-15 2011-12-15 液晶显示面板以及其制造方式
US13/380,879 US20130155353A1 (en) 2011-12-15 2011-12-19 LCD Panel and Manufacturing Method Thereof
PCT/CN2011/084183 WO2013086746A1 (zh) 2011-12-15 2011-12-19 液晶显示面板以及其制造方式

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110419814.5A CN102508376B (zh) 2011-12-15 2011-12-15 液晶显示面板以及其制造方式

Publications (2)

Publication Number Publication Date
CN102508376A CN102508376A (zh) 2012-06-20
CN102508376B true CN102508376B (zh) 2014-07-16

Family

ID=46220479

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110419814.5A Active CN102508376B (zh) 2011-12-15 2011-12-15 液晶显示面板以及其制造方式

Country Status (2)

Country Link
CN (1) CN102508376B (zh)
WO (1) WO2013086746A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104157612A (zh) * 2014-08-21 2014-11-19 深圳市华星光电技术有限公司 Tft阵列基板的制作方法及tft阵列基板结构
US20170315393A1 (en) * 2014-11-20 2017-11-02 Sharp Kabushiki Kaisha Liquid crystal display device and method for manufacturing same
CN104503127B (zh) * 2014-12-01 2017-10-13 深圳市华星光电技术有限公司 阵列基板及其制作方法
CN105842929B (zh) * 2015-01-12 2020-12-29 群创光电股份有限公司 显示装置
CN104749816B (zh) * 2015-04-14 2017-11-10 京东方科技集团股份有限公司 一种显示基板的制作方法、显示基板和显示装置
CN105242468A (zh) * 2015-10-27 2016-01-13 深圳市华星光电技术有限公司 减少寄生电容的液晶显示面板以及其制作方法
CN105869827B (zh) * 2016-04-15 2018-02-23 无锡中微晶园电子有限公司 一种包含有金属、聚酰亚胺及阻挡层结构的器件单元体及制作方法
CN106249494A (zh) * 2016-08-18 2016-12-21 深圳市华星光电技术有限公司 一种阵列基板及显示面板
CN106094360A (zh) * 2016-08-22 2016-11-09 深圳市华星光电技术有限公司 曲面液晶显示面板
CN108333845A (zh) * 2018-02-26 2018-07-27 武汉华星光电技术有限公司 阵列基板、显示面板以及阵列基板的制作方法
CN112785917B (zh) * 2019-11-04 2023-10-10 群创光电股份有限公司 电子装置
WO2023122925A1 (zh) * 2021-12-28 2023-07-06 厦门市芯颖显示科技有限公司 一种显示装置及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101067705A (zh) * 2007-07-03 2007-11-07 友达光电股份有限公司 液晶显示器的像素结构及其制造方法
CN101257031A (zh) * 2003-07-31 2008-09-03 奇美电子股份有限公司 薄膜晶体管阵列基板及薄膜晶体管阵列基板的制作方法
CN101334564A (zh) * 2007-06-28 2008-12-31 上海广电Nec液晶显示器有限公司 一种液晶显示装置及其制造方法
CN101409263A (zh) * 2008-12-02 2009-04-15 友达光电股份有限公司 像素结构、显示面板以及光电装置的制造方法
CN101494202A (zh) * 2008-05-21 2009-07-29 友达光电股份有限公司 薄膜晶体管阵列基板与液晶显示面板的制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101257031A (zh) * 2003-07-31 2008-09-03 奇美电子股份有限公司 薄膜晶体管阵列基板及薄膜晶体管阵列基板的制作方法
CN101334564A (zh) * 2007-06-28 2008-12-31 上海广电Nec液晶显示器有限公司 一种液晶显示装置及其制造方法
CN101067705A (zh) * 2007-07-03 2007-11-07 友达光电股份有限公司 液晶显示器的像素结构及其制造方法
CN101494202A (zh) * 2008-05-21 2009-07-29 友达光电股份有限公司 薄膜晶体管阵列基板与液晶显示面板的制作方法
CN101409263A (zh) * 2008-12-02 2009-04-15 友达光电股份有限公司 像素结构、显示面板以及光电装置的制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
附图3I.

Also Published As

Publication number Publication date
CN102508376A (zh) 2012-06-20
WO2013086746A1 (zh) 2013-06-20

Similar Documents

Publication Publication Date Title
CN102508376B (zh) 液晶显示面板以及其制造方式
CN104880871B (zh) 显示面板和显示装置
CN100573292C (zh) 液晶显示面板以及制造其对向基板的方法
US8810744B2 (en) Liquid crystal display panel and manufacturing method thereof
US20130120680A1 (en) Tft array substrate and display device
CN102681245B (zh) 半透半反液晶显示阵列基板及其制造方法、显示装置
US20140168585A1 (en) Color filter substrate, manfacturing method for the same, and display device
US20230107895A1 (en) Array substrate and display panel
CN108761941A (zh) Coa型液晶显示面板结构及coa型液晶显示面板的制作方法
US20130155353A1 (en) LCD Panel and Manufacturing Method Thereof
CN105116651A (zh) Boa型液晶面板
CN106932986B (zh) 阵列基板结构及阵列基板的制备方法
CN101013239A (zh) 液晶显示面板
CN104267530A (zh) 显示面板
CN103645589A (zh) 显示装置、阵列基板及其制作方法
CN102967971A (zh) 阵列基板以及显示装置
CN102495504A (zh) 平面显示面板及其形成方法
US20200301215A1 (en) Array substrate, liquid crystal display panel and display device
CN202421681U (zh) 像素单元、阵列基板、液晶面板及显示装置
CN102768432B (zh) 彩色滤光阵列基板及其制造方法
US11460743B2 (en) Array substrate, light control panel, and display device
CN101363991A (zh) 彩色滤光基板及其制造方法与液晶显示面板
CN102053439A (zh) 像素单元以及液晶显示面板
CN203930284U (zh) 液晶显示面板及包含其的液晶显示设备
CN101114089A (zh) 液晶显示面板及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen

Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd.

Address before: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen

Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210311

Address after: No.109, Kangping Road, Liuyang economic and Technological Development Zone, Changsha, Hunan 410300

Patentee after: Changsha Huike optoelectronics Co., Ltd

Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province

Patentee before: TCL Huaxing Photoelectric Technology Co.,Ltd.