CN102500570A - Method for cleaning solar cell silicon wafers - Google Patents
Method for cleaning solar cell silicon wafers Download PDFInfo
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- CN102500570A CN102500570A CN2011103387830A CN201110338783A CN102500570A CN 102500570 A CN102500570 A CN 102500570A CN 2011103387830 A CN2011103387830 A CN 2011103387830A CN 201110338783 A CN201110338783 A CN 201110338783A CN 102500570 A CN102500570 A CN 102500570A
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- cleaning
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- solar cell
- silicon chip
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for cleaning solar cell silicon wafers, which comprises steps of cleaning and drying. The method is characterized in that the cleaning step includes adopting water replacement cleaning agent to clean surfaces of the solar cell silicon wafers, and the water replacement cleaning agent includes from 5 to 15 parts of 1, 2- dimethoxyethane, from 40 to 60 parts of n-pentane, from 20 to 40 parts of nonane and from 5 to 15 parts of ethoxylated octyl phenol. In a cleaning process, the water replacement cleaning agent can be placed in cleaning equipment with an ultrasonic cleaning function, and the wafers to be cleaned are dried by hot air after being ultrasonically cleaned in the provided water replacement cleaning agent. The method for cleaning the solar cell silicon wafers achieves purposes of optimizing cleaning process, simplifying the cleaning equipment, shortening silicon wafer cleaning time, saving energy consumption and reducing cost by the aid of water shearing and dewatering characteristics of the water replacement cleaning agent.
Description
Technical field
The present invention relates to a kind of production technology of solar silicon wafers, particularly a kind of silicon chip of solar cell cleaning method.
Background technology
Solar energy is inexhaustible clean energy resource, and people utilize solar energy very early, to the appearance of solar cell, the use of solar energy is stepped on a new stage especially.Along with the develop rapidly of photovoltaic industry, people are also increasingly high to the requirement of its cost control and product quality.In the manufacture process of solar cell, because the pollutant on surface can directly have influence on quality, efficient, yield rate, quality percentage and the transformation efficiency of making herbs into wool.So the cleaning of silicon chip also more and more receives people's attention.The all improvement of technology aspect cleaning of a lot of enterprises.
The pollutant of silicon chip surface normally is present in the surface or himself oxide-film of silicon chip with the mode of chemistry or physical absorption.Cleaning requirement is under the prerequisite of not damaging silicon chip, to remove all kinds of impurity.General silicon chip cleans and can be divided into physics cleaning and Chemical cleaning, and Chemical cleaning comprises water-soluble cleaning and gas phase cleaning etc.Owing to the former low price, handled easily well can clean impurity to very low advantages such as level again the selectivity of impurity, in the industry cycle occupies an leading position always.
In the prior art, adopt water-soluble cleaning mostly, one of its disadvantage can not thoroughly be removed silicon chip surface moisture exactly after deionized water draws slowly, part silicon chip top is sticked together, and the part silicon chip is air-dry not thoroughly or water wave arranged; Two of disadvantage is that pure water draws slowly and will use recirculated water, and like this water temperature just is difficult to control, and equipment making is also complicated, if need not circulate, water temperature is more controlled, but water quality degenerates easily, thereby pollutes silicon chip, causes defective; Disadvantage three usually in order to guarantee that silicon chip can be fully dry, this link will be established 2-4 station usually and come heated-air drying, makes that this production cycle is elongated.
Summary of the invention
The objective of the invention is provides a kind of cleaning process simple, convenient for the deficiency that solves above-mentioned prior art, and cleaning performance is good, can not produce the water mark and reduce the silicon chip of solar cell cleaning method that cleans energy consumption.
To achieve these goals; Silicon chip of solar cell cleaning method provided by the present invention; It comprises cleans and drying; It is characterized in that described cleaning is to adopt to cut aqua the solar silicon wafers surface is cleaned, the described aqua of cutting is by 1,5 to 15 parts of 2-dimethoxy-ethanes, 40 to 60 parts of pentanes, 20 to 40 parts of positive nonanes and 5 to 15 parts of compositions of octyl phenol APEO.In order to guarantee cleaning performance, in cleaning process, cut the cleaning equipment that aqua can place the band ultrasonic waves for cleaning, silicon chip to be cleaned gets final product through heated-air drying through being cut in the aqua after the ultrasonic waves for cleaning what provide again.
The aqua of cutting provided by the invention, its density is lighter than water, is about about 0.7 of water under the normal temperature and pressure; Insoluble with water; It is big to cut aqua owing to the density of water is more provided by the invention, and after wet silicon chip got into and cuts aqua, the water on the wet silicon chip can sink rapidly; Because of both are immiscible, so have one significantly to divide water layer between the two.This in addition aqua of cutting has extremely strong permeability, the residue of silicon chip surface is also had the cleaning action of dissolving and brute force, and can shorten scavenging period, simplifies cleaning equipment and cleaning.
1. simplify cleaning, improved equipment capacity;
2. practiced thrift the cleaning energy consumption;
3. use the equipment cut aqua to lack 1/4th, lack 1/5th than the cleaning equipment of former heated-air drying than the apparatus in comparison cost of use IPA.
What aqua was cut in utilization of the present invention cuts water, dehydration characteristic, is applied in the silicon chip matting of solar cell industry the purpose that to reach the optimization cleaning, simplify cleaning equipment, shorten the silicon chip scavenging period, energy efficient reduces cost.The result shows: the use of cutting aqua can produce a desired effect, and also very beneficial to the raising of the cleannes of silicon chip.
Adopt the aqua cleaning silicon chip of cutting provided by the invention, can eliminate of the prior art three big disadvantages fully, can also enhance productivity greatly.And can not produce harmful effect to silicon chip surface; Compare heated-air drying formula cleaning machine, after aqua was cut in use, silicon chip water wave problem was able to solve, and silicon chip originally is most residual water waves after heated-air drying, also do not have positive effect again even do over again.And use provided by the invention cut aqua after, silicon chip surface no longer includes water wave, and the hot blast length of tunnel also can shorten half the.
The specific embodiment
Through embodiment the present invention is further specified below.
Embodiment:
The silicon chip of solar cell cleaning method that present embodiment provides; It comprises cleans and drying; Described cleaning is to adopt to cut aqua the solar silicon wafers surface is cleaned; The described aqua of cutting is by 1,5 parts of 2-dimethoxy-ethanes, 40 parts of pentanes, 20 parts of positive nonanes and 5 parts of compositions of octyl phenol APEO.The silicon chip that need are cleaned places cuts aqua,, is delivered to 50 degree ℃ heated-air dryings and gets final product after 10 minutes through normal temperature.
Embodiment 2:
What present embodiment provided cuts aqua by 1,15 parts of 2-dimethoxy-ethanes, 60 parts of pentanes, 40 parts of positive nonanes and 15 parts of compositions of octyl phenol APEO.Cut the cleaning equipment that aqua places the band ultrasonic waves for cleaning, silicon chip to be cleaned is through ultrasonic waves for cleaning was delivered to 50 degree ℃ heated-air dryings and gets final product after 5 minutes in the aqua cutting of being provided.
Embodiment 3:
The described aqua of cutting of present embodiment is by 1,10 parts of 2-dimethoxy-ethanes, 50 parts of pentanes, 30 parts of positive nonanes and 10 parts of compositions of octyl phenol APEO.Clean and drying course such as embodiment 2.
Claims (2)
1. silicon chip of solar cell cleaning method; It comprises cleans and drying; It is characterized in that described cleaning is to adopt to cut aqua the solar silicon wafers surface is cleaned; The described aqua of cutting is by 1,5 to 15 parts of 2-dimethoxy-ethanes, 40 to 60 parts of pentanes, 20 to 40 parts of positive nonanes and 5 to 15 parts of compositions of octyl phenol APEO.
2. silicon chip of solar cell cleaning method according to claim 1; It is characterized in that in cleaning process; Cut the cleaning equipment that aqua places the band ultrasonic waves for cleaning, silicon chip to be cleaned through provided cut the ultrasonic waves for cleaning in the aqua after, get final product through heated-air drying again.
Priority Applications (1)
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CN2011103387830A CN102500570A (en) | 2011-11-01 | 2011-11-01 | Method for cleaning solar cell silicon wafers |
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CN2011103387830A CN102500570A (en) | 2011-11-01 | 2011-11-01 | Method for cleaning solar cell silicon wafers |
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CN102500570A true CN102500570A (en) | 2012-06-20 |
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CN2011103387830A Pending CN102500570A (en) | 2011-11-01 | 2011-11-01 | Method for cleaning solar cell silicon wafers |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105080921A (en) * | 2014-05-22 | 2015-11-25 | 宇瀚光电科技(苏州)有限公司 | Cover board glass washing process |
CN111330903A (en) * | 2020-03-26 | 2020-06-26 | 常州高特新材料股份有限公司 | Physical cleaning method for silicon wafer |
Citations (8)
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JPH05177102A (en) * | 1991-12-27 | 1993-07-20 | Japan Field Kk | Removal of moisture bonded to article to be washed |
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JP2008179638A (en) * | 2001-06-28 | 2008-08-07 | Nippon Zeon Co Ltd | Method for producing cycloalkyl alkyl ether compound |
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JP2011021213A (en) * | 2009-07-14 | 2011-02-03 | World Kiko:Kk | Cleaning method, cleaning apparatus and drying apparatus |
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2011
- 2011-11-01 CN CN2011103387830A patent/CN102500570A/en active Pending
Patent Citations (8)
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JPH05177102A (en) * | 1991-12-27 | 1993-07-20 | Japan Field Kk | Removal of moisture bonded to article to be washed |
JP2008179638A (en) * | 2001-06-28 | 2008-08-07 | Nippon Zeon Co Ltd | Method for producing cycloalkyl alkyl ether compound |
JP2005189679A (en) * | 2003-12-26 | 2005-07-14 | Shinryo Corp | Method for regenerating glass substrate for color filter |
JP2007254555A (en) * | 2006-03-22 | 2007-10-04 | Sanyo Chem Ind Ltd | Cleanser composition |
CN101679922A (en) * | 2007-06-08 | 2010-03-24 | 旭硝子株式会社 | Cleaning solvent and cleaning method |
CN101314750A (en) * | 2008-06-13 | 2008-12-03 | 唐玉冰 | Silicon slice detergent and preparation thereof |
JP2011021047A (en) * | 2009-07-13 | 2011-02-03 | Kaken Tec Kk | Water substituting agent and washing method using the same |
JP2011021213A (en) * | 2009-07-14 | 2011-02-03 | World Kiko:Kk | Cleaning method, cleaning apparatus and drying apparatus |
Non-Patent Citations (1)
Title |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105080921A (en) * | 2014-05-22 | 2015-11-25 | 宇瀚光电科技(苏州)有限公司 | Cover board glass washing process |
CN111330903A (en) * | 2020-03-26 | 2020-06-26 | 常州高特新材料股份有限公司 | Physical cleaning method for silicon wafer |
CN111330903B (en) * | 2020-03-26 | 2021-08-17 | 常州高特新材料股份有限公司 | Physical cleaning method for silicon wafer |
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Application publication date: 20120620 |