CN102484682A - 光传感器和显示装置 - Google Patents

光传感器和显示装置 Download PDF

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Publication number
CN102484682A
CN102484682A CN2010800374673A CN201080037467A CN102484682A CN 102484682 A CN102484682 A CN 102484682A CN 2010800374673 A CN2010800374673 A CN 2010800374673A CN 201080037467 A CN201080037467 A CN 201080037467A CN 102484682 A CN102484682 A CN 102484682A
Authority
CN
China
Prior art keywords
mentioned
photodiode
optical sensor
mos transistor
memory node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800374673A
Other languages
English (en)
Chinese (zh)
Inventor
辻野幸生
中川阳介
前田和宏
白木一郎
杉山裕昭
桑原信弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of CN102484682A publication Critical patent/CN102484682A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Position Input By Displaying (AREA)
CN2010800374673A 2009-08-26 2010-07-12 光传感器和显示装置 Pending CN102484682A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009195801 2009-08-26
JP2009-195801 2009-08-26
PCT/JP2010/061792 WO2011024571A1 (ja) 2009-08-26 2010-07-12 光センサおよび表示装置

Publications (1)

Publication Number Publication Date
CN102484682A true CN102484682A (zh) 2012-05-30

Family

ID=43627682

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800374673A Pending CN102484682A (zh) 2009-08-26 2010-07-12 光传感器和显示装置

Country Status (5)

Country Link
US (1) US8780101B2 (de)
EP (1) EP2472854A4 (de)
JP (1) JP5284476B2 (de)
CN (1) CN102484682A (de)
WO (1) WO2011024571A1 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104659072A (zh) * 2015-03-16 2015-05-27 京东方科技集团股份有限公司 阵列基板和阵列基板制作方法
US9917254B2 (en) 2016-01-26 2018-03-13 Boe Technology Group Co., Ltd. Encapsulation package, display device and packaging method
CN113489923A (zh) * 2020-03-17 2021-10-08 夏普株式会社 使用tft像素电路的光学有源像素传感器
CN114739433A (zh) * 2022-04-15 2022-07-12 北京京东方光电科技有限公司 一种光电传感器信号读取电路及光电传感器装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8605059B2 (en) * 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
US10739807B2 (en) 2018-09-11 2020-08-11 Stmicroelectronics (Crolles 2) Sas Body biasing for ultra-low voltage digital circuits
KR20200142641A (ko) 2019-06-12 2020-12-23 삼성디스플레이 주식회사 표시 장치
US10892757B1 (en) 2019-11-25 2021-01-12 Stmicroelectronics (Research & Development) Limited Reverse body biasing of a transistor using a photovoltaic source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05284279A (ja) * 1992-03-30 1993-10-29 Kanegafuchi Chem Ind Co Ltd イメージセンサ
WO2007145347A1 (en) * 2006-06-12 2007-12-21 Sharp Kabushiki Kaisha Combined image sensor and display device
WO2009098994A1 (ja) * 2008-02-05 2009-08-13 Sharp Kabushiki Kaisha 光センサ内蔵表示パネルおよびそれを用いた表示装置並びに光センサ内蔵表示パネルの駆動方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751005A (en) * 1996-12-20 1998-05-12 Raytheon Company Low-crosstalk column differencing circuit architecture for integrated two-color focal plane arrays
US6697114B1 (en) * 1999-08-13 2004-02-24 Foveon, Inc. Triple slope pixel sensor and arry
JP4671494B2 (ja) 2000-12-12 2011-04-20 株式会社半導体エネルギー研究所 情報装置の駆動方法
US7602380B2 (en) 2004-08-10 2009-10-13 Toshiba Matsushita Display Technology Co., Ltd. Display device with optical input function
JP2006244407A (ja) 2005-03-07 2006-09-14 Toshiba Matsushita Display Technology Co Ltd 表示装置
JP4469680B2 (ja) 2004-08-10 2010-05-26 東芝モバイルディスプレイ株式会社 光入力機能付き表示装置
US7705900B2 (en) * 2005-06-01 2010-04-27 Eastman Kodak Company CMOS image sensor pixel with selectable binning and conversion gain
GB2439118A (en) 2006-06-12 2007-12-19 Sharp Kk Image sensor and display
KR101479984B1 (ko) * 2007-12-27 2015-01-13 삼성디스플레이 주식회사 조도 감지 장치 및 이를 포함하는 표시 장치
US8294079B2 (en) * 2008-04-28 2012-10-23 Sharp Kabushiki Kaisha Diode, photodetector circuit including same, and display device
JP5481127B2 (ja) * 2009-08-19 2014-04-23 株式会社ジャパンディスプレイ センサ素子およびその駆動方法、センサ装置、ならびに入力機能付き表示装置および電子機器
US20120242621A1 (en) * 2011-03-24 2012-09-27 Christopher James Brown Image sensor and display device incorporating the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05284279A (ja) * 1992-03-30 1993-10-29 Kanegafuchi Chem Ind Co Ltd イメージセンサ
WO2007145347A1 (en) * 2006-06-12 2007-12-21 Sharp Kabushiki Kaisha Combined image sensor and display device
WO2009098994A1 (ja) * 2008-02-05 2009-08-13 Sharp Kabushiki Kaisha 光センサ内蔵表示パネルおよびそれを用いた表示装置並びに光センサ内蔵表示パネルの駆動方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104659072A (zh) * 2015-03-16 2015-05-27 京东方科技集团股份有限公司 阵列基板和阵列基板制作方法
US10096660B2 (en) 2015-03-16 2018-10-09 Boe Technology Group Co., Ltd. Array substrate, method for manufacturing array substrate, and display device
US9917254B2 (en) 2016-01-26 2018-03-13 Boe Technology Group Co., Ltd. Encapsulation package, display device and packaging method
CN113489923A (zh) * 2020-03-17 2021-10-08 夏普株式会社 使用tft像素电路的光学有源像素传感器
CN113489923B (zh) * 2020-03-17 2024-04-05 夏普株式会社 使用tft像素电路的光学有源像素传感器
CN114739433A (zh) * 2022-04-15 2022-07-12 北京京东方光电科技有限公司 一种光电传感器信号读取电路及光电传感器装置
CN114739433B (zh) * 2022-04-15 2023-12-26 北京京东方光电科技有限公司 一种光电传感器信号读取电路及光电传感器装置

Also Published As

Publication number Publication date
US8780101B2 (en) 2014-07-15
EP2472854A4 (de) 2013-12-04
US20120154354A1 (en) 2012-06-21
WO2011024571A1 (ja) 2011-03-03
JP5284476B2 (ja) 2013-09-11
JPWO2011024571A1 (ja) 2013-01-24
EP2472854A1 (de) 2012-07-04

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Application publication date: 20120530