CN102474932B - 具有可调节色温的白光电致发光器件 - Google Patents

具有可调节色温的白光电致发光器件 Download PDF

Info

Publication number
CN102474932B
CN102474932B CN201080029543.6A CN201080029543A CN102474932B CN 102474932 B CN102474932 B CN 102474932B CN 201080029543 A CN201080029543 A CN 201080029543A CN 102474932 B CN102474932 B CN 102474932B
Authority
CN
China
Prior art keywords
light
line segment
color temperature
conversion element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080029543.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN102474932A (zh
Inventor
迈克尔·A·哈斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN102474932A publication Critical patent/CN102474932A/zh
Application granted granted Critical
Publication of CN102474932B publication Critical patent/CN102474932B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/20—Controlling the colour of the light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Filters (AREA)
  • Led Devices (AREA)
CN201080029543.6A 2009-06-30 2010-06-25 具有可调节色温的白光电致发光器件 Expired - Fee Related CN102474932B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22166009P 2009-06-30 2009-06-30
US61/221,660 2009-06-30
PCT/US2010/040017 WO2011002686A1 (en) 2009-06-30 2010-06-25 White light electroluminescent devices with adjustable color temperature

Publications (2)

Publication Number Publication Date
CN102474932A CN102474932A (zh) 2012-05-23
CN102474932B true CN102474932B (zh) 2015-12-16

Family

ID=42646301

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080029543.6A Expired - Fee Related CN102474932B (zh) 2009-06-30 2010-06-25 具有可调节色温的白光电致发光器件

Country Status (7)

Country Link
US (1) US8629611B2 (enExample)
EP (1) EP2449856A1 (enExample)
JP (2) JP2012532453A (enExample)
KR (1) KR20120092549A (enExample)
CN (1) CN102474932B (enExample)
TW (1) TW201130107A (enExample)
WO (1) WO2011002686A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107420748A (zh) * 2017-07-25 2017-12-01 江苏集萃有机光电技术研究所有限公司 可调色温和显色指数的发光器件、调节方法及灯具

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2427922A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
EP2449608A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
EP2449609A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction
CN103299422B (zh) 2010-12-29 2016-11-02 3M创新有限公司 具有宽带输出和可控颜色的远程荧光粉led装置
JP5906433B2 (ja) * 2011-12-19 2016-04-20 パナソニックＩｐマネジメント株式会社 照明装置
DE102012105208A1 (de) * 2012-06-15 2013-12-19 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle
EP2896078A4 (en) 2012-09-13 2016-05-25 3M Innovative Properties Co EFFICIENT LIGHTING SYSTEM WITH A LARGE COLOR RANGE
EP2953174B1 (en) * 2013-01-31 2020-07-01 Kabushiki Kaisha Toshiba Light emitting device and led light bulb
CN105075397B (zh) * 2013-03-11 2018-02-02 飞利浦照明控股有限公司 可调光发光装置
DE102013206154A1 (de) * 2013-04-08 2014-10-09 Zumtobel Lighting Gmbh Leuchtvorrichtung mit variabel einstellbarer Lichtfarbe
JP2015050270A (ja) * 2013-08-30 2015-03-16 株式会社東芝 半導体発光装置
FR3012677B1 (fr) * 2013-10-25 2015-12-25 Commissariat Energie Atomique Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphore
JP6014007B2 (ja) * 2013-11-08 2016-10-25 豊田合成株式会社 照明装置
US9215761B2 (en) * 2014-05-15 2015-12-15 Cree, Inc. Solid state lighting devices with color point non-coincident with blackbody locus
DE102015202159B4 (de) * 2015-02-06 2023-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiter-Beleuchtungsvorrichtung
JP6696129B2 (ja) * 2015-08-28 2020-05-20 日亜化学工業株式会社 発光装置
CN109038207B (zh) * 2018-07-27 2020-11-27 中国科学院苏州纳米技术与纳米仿生研究所 一种可控温vcsel器件及其制作方法
CN109379813B (zh) * 2018-12-07 2021-08-17 深圳和而泰智能控制股份有限公司 色温可调的照明模组及照明模组的色温调节方法
US10887960B2 (en) * 2019-03-28 2021-01-05 Lumileds Llc Color tunable light emitting diode (LED) systems, LED lighting systems, and methods

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101076897A (zh) * 2004-12-09 2007-11-21 3M创新有限公司 改进短波长led以用于多色、宽波段或“白光”发射
TW200807753A (en) * 2006-03-31 2008-02-01 Seoul Semiconductor Co Ltd Light emitting device and lighting system having the same
US20080297027A1 (en) * 2007-05-30 2008-12-04 Miller Michael E Lamp with adjustable color

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3526801A (en) 1964-08-07 1970-09-01 Honeywell Inc Radiation sensitive semiconductor device
JPH077847B2 (ja) 1984-12-17 1995-01-30 株式会社東芝 半導体発光素子
US5048035A (en) 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2871477B2 (ja) 1994-09-22 1999-03-17 信越半導体株式会社 半導体発光装置およびその製造方法
CN1150882A (zh) 1995-03-10 1997-05-28 菲利浦电子有限公司 在日光级影响下控制人造光色温的照明系统
AU744162B2 (en) 1997-02-19 2002-02-14 Kirin Beer Kabushiki Kaisha Method and apparatus for producing plastic container having carbon film coating
US6016038A (en) 1997-08-26 2000-01-18 Color Kinetics, Inc. Multicolored LED lighting method and apparatus
US7014336B1 (en) 1999-11-18 2006-03-21 Color Kinetics Incorporated Systems and methods for generating and modulating illumination conditions
JP3358556B2 (ja) 1998-09-09 2002-12-24 日本電気株式会社 半導体装置及びその製造方法
WO2000076005A1 (en) 1999-06-04 2000-12-14 Trustees Of Boston University Photon recycling semiconductor multi-wavelength light-emitting diodes
FR2801814B1 (fr) 1999-12-06 2002-04-19 Cebal Procede de depot d'un revetement sur la surface interne des boitiers distributeurs aerosols
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
TW497277B (en) 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
US7202613B2 (en) 2001-05-30 2007-04-10 Color Kinetics Incorporated Controlled lighting methods and apparatus
US6636003B2 (en) 2000-09-06 2003-10-21 Spectrum Kinetics Apparatus and method for adjusting the color temperature of white semiconduct or light emitters
IL138471A0 (en) 2000-09-14 2001-10-31 Yissum Res Dev Co Novel semiconductor materials and their uses
AU2002239288A1 (en) 2000-11-17 2002-05-27 Emcore Corporation Laser separated die with tapered sidewalls for improved light extraction
US7358679B2 (en) 2002-05-09 2008-04-15 Philips Solid-State Lighting Solutions, Inc. Dimmable LED-based MR16 lighting apparatus and methods
CA2427559A1 (en) 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
ATE468147T1 (de) 2003-01-16 2010-06-15 Femmepharma Holding Co Inc Vaginaler oder rektaler applikator und verfahren
JP2005005482A (ja) * 2003-06-12 2005-01-06 Citizen Electronics Co Ltd Ｌｅｄ発光装置及びそれを用いたカラー表示装置
NO20041523L (no) 2003-09-19 2005-03-21 Sumitomo Electric Industries Lysemitterende halvlederelement
JP2005101296A (ja) * 2003-09-25 2005-04-14 Osram-Melco Ltd 可変色発光ダイオード素子及び可変色発光ダイオードモジュール及び可変色発光ダイオード照明器具
DE10354936B4 (de) 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
US7026653B2 (en) 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
TWI229465B (en) 2004-03-02 2005-03-11 Genesis Photonics Inc Single chip white light component
TWI243489B (en) 2004-04-14 2005-11-11 Genesis Photonics Inc Single chip light emitting diode with red, blue and green three wavelength light emitting spectra
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7553683B2 (en) 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
US7119377B2 (en) 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7126160B2 (en) 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7223998B2 (en) 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
CN101390214A (zh) 2004-10-08 2009-03-18 加利福尼亚大学董事会 高效发光二极管
US7804100B2 (en) 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
US7417260B2 (en) 2005-06-28 2008-08-26 Dong-Sing Wuu Multiple-chromatic light emitting device
WO2007034367A1 (en) 2005-09-19 2007-03-29 Koninklijke Philips Electronics N.V. Variable color light emitting device and method for controlling the same
US7285791B2 (en) 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
US20070284565A1 (en) 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7902542B2 (en) 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
JP4989936B2 (ja) * 2006-07-27 2012-08-01 株式会社朝日ラバー 照明装置
KR100829925B1 (ko) 2007-03-02 2008-05-16 세메스 주식회사 기판을 처리하는 장치 및 방법
JP2010525555A (ja) 2007-03-08 2010-07-22 スリーエム イノベイティブ プロパティズ カンパニー 発光素子のアレイ
US7288902B1 (en) 2007-03-12 2007-10-30 Cirrus Logic, Inc. Color variations in a dimmable lighting device with stable color temperature light sources
US7687816B2 (en) 2007-03-20 2010-03-30 International Business Machines Corporation Light emitting diode
US10505083B2 (en) 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
WO2009036579A1 (en) 2007-09-21 2009-03-26 Hoffmann Neopac Ag Apparatus for plasma supported coating of the inner surface of tube-like packaging containers made of plastics with the assistance of a non-thermal reactive ambient pressure beam plasma
US20100283074A1 (en) 2007-10-08 2010-11-11 Kelley Tommie W Light emitting diode with bonded semiconductor wavelength converter
US9012937B2 (en) * 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
JP2011501466A (ja) 2007-10-26 2011-01-06 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド １つまたは複数の発光体を有する照明デバイス、およびその製作方法
KR20110019390A (ko) 2008-06-05 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접합형 반도체 파장 변환기를 갖는 발광 다이오드
JP2011526074A (ja) 2008-06-26 2011-09-29 スリーエム イノベイティブ プロパティズ カンパニー 半導体光変換構成体
KR20110031953A (ko) 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조체
WO2010019594A2 (en) 2008-08-14 2010-02-18 3M Innovative Properties Company Projection system with imaging light source module
EP2332223A1 (en) 2008-09-04 2011-06-15 3M Innovative Properties Company I i-vi mqw vcsel on a heat sink optically pumped by a gan ld
WO2010028146A2 (en) 2008-09-08 2010-03-11 3M Innovative Properties Company Electrically pixelated luminescent device
US8619620B2 (en) 2008-09-16 2013-12-31 Qualcomm Incorporated Methods and systems for transmission mode selection in a multi channel communication system
WO2010074987A2 (en) 2008-12-24 2010-07-01 3M Innovative Properties Company Light generating device having double-sided wavelength converter
EP2427922A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
EP2449608A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
EP2449609A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101076897A (zh) * 2004-12-09 2007-11-21 3M创新有限公司 改进短波长led以用于多色、宽波段或“白光”发射
TW200807753A (en) * 2006-03-31 2008-02-01 Seoul Semiconductor Co Ltd Light emitting device and lighting system having the same
US20080297027A1 (en) * 2007-05-30 2008-12-04 Miller Michael E Lamp with adjustable color

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107420748A (zh) * 2017-07-25 2017-12-01 江苏集萃有机光电技术研究所有限公司 可调色温和显色指数的发光器件、调节方法及灯具
CN107420748B (zh) * 2017-07-25 2019-11-19 江苏集萃有机光电技术研究所有限公司 可调色温和显色指数的发光器件、调节方法及灯具

Also Published As

Publication number Publication date
JP2015149480A (ja) 2015-08-20
JP2012532453A (ja) 2012-12-13
WO2011002686A1 (en) 2011-01-06
TW201130107A (en) 2011-09-01
JP6140742B2 (ja) 2017-05-31
CN102474932A (zh) 2012-05-23
EP2449856A1 (en) 2012-05-09
US8629611B2 (en) 2014-01-14
KR20120092549A (ko) 2012-08-21
US20120104935A1 (en) 2012-05-03

Similar Documents

Publication Publication Date Title
CN102474932B (zh) 具有可调节色温的白光电致发光器件
JP5091000B2 (ja) Ｃｒｉの高い暖色系白色光を供給するマルチチップ発光デバイスランプおよびこれを含む照明器具
US10541353B2 (en) Light emitting devices including narrowband converters for outdoor lighting applications
US10074781B2 (en) Semiconductor light emitting devices including multiple red phosphors that exhibit good color rendering properties with increased brightness
US20140167601A1 (en) Enhanced Luminous Flux Semiconductor Light Emitting Devices Including Red Phosphors that Exhibit Good Color Rendering Properties and Related Red Phosphors
US8178888B2 (en) Semiconductor light emitting devices with high color rendering
US9219202B2 (en) Semiconductor light emitting devices including red phosphors that exhibit good color rendering properties and related red phosphors
US20130015461A1 (en) Light-emitting Device Capable of Producing White Light And Light Mixing Method For Producing White Light With Same
CN102473816B (zh) 基于电流拥挤调节颜色的电致发光装置
US20120313119A1 (en) Three dimensional light-emitting-diode (led) stack and method of manufacturing the same
KR20210039266A (ko) 색온도 조절이 가능한 고연색지수의 백색광 발광장치
US9054278B2 (en) Lighting apparatuses and driving methods regarding to light-emitting diodes
TW201301570A (zh) 多光色發光二極體及其製作方法
US20140035455A1 (en) LED Lamp With A High Color Rendering Index
CN103839511B (zh) 关于发光二极管的发光装置与驱动方法
TWI493751B (zh) 堆疊結合發光二極體
TW202021155A (zh) 具有光散射調諧之發光器件以控制色彩偏移
TWI506759B (zh) A light emitting element capable of emitting white light and a method of mixing the same
CA2639897A1 (en) Improved illumination using dilute-nitride layers and devices including dilute-nitride layers

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151216

Termination date: 20180625

CF01 Termination of patent right due to non-payment of annual fee