FR3012677B1 - Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphore - Google Patents
Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphoreInfo
- Publication number
- FR3012677B1 FR3012677B1 FR1360417A FR1360417A FR3012677B1 FR 3012677 B1 FR3012677 B1 FR 3012677B1 FR 1360417 A FR1360417 A FR 1360417A FR 1360417 A FR1360417 A FR 1360417A FR 3012677 B1 FR3012677 B1 FR 3012677B1
- Authority
- FR
- France
- Prior art keywords
- light emitting
- light
- adjusting
- phosphorus
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title 1
- 229910052698 phosphorus Inorganic materials 0.000 title 1
- 239000011574 phosphorus Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/37—Converter circuits
- H05B45/3725—Switched mode power supply [SMPS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
- H01L31/162—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. a light emitting diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/10—Controlling the intensity of the light
- H05B45/12—Controlling the intensity of the light using optical feedback
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/20—Controlling the colour of the light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
- H05B47/10—Controlling the light source
- H05B47/105—Controlling the light source in response to determined parameters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
- H05B47/10—Controlling the light source
- H05B47/105—Controlling the light source in response to determined parameters
- H05B47/11—Controlling the light source in response to determined parameters by determining the brightness or colour temperature of ambient light
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1360417A FR3012677B1 (fr) | 2013-10-25 | 2013-10-25 | Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphore |
US15/031,881 US20160270187A1 (en) | 2013-10-25 | 2014-10-24 | Light-emitting device, device and method for adjusting the light emission of a light-emitting diode comprising phosphorus |
PCT/EP2014/072899 WO2015059295A1 (fr) | 2013-10-25 | 2014-10-24 | Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphore |
EP14789275.6A EP3061316A1 (fr) | 2013-10-25 | 2014-10-24 | Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphore |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1360417A FR3012677B1 (fr) | 2013-10-25 | 2013-10-25 | Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphore |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3012677A1 FR3012677A1 (fr) | 2015-05-01 |
FR3012677B1 true FR3012677B1 (fr) | 2015-12-25 |
Family
ID=50231290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1360417A Expired - Fee Related FR3012677B1 (fr) | 2013-10-25 | 2013-10-25 | Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphore |
Country Status (4)
Country | Link |
---|---|
US (1) | US20160270187A1 (fr) |
EP (1) | EP3061316A1 (fr) |
FR (1) | FR3012677B1 (fr) |
WO (1) | WO2015059295A1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3020878A1 (fr) | 2014-05-06 | 2015-11-13 | Commissariat Energie Atomique | Dispositif de filtrage optique comportant des cavites fabry-perot a couche structuree et d'epaisseurs differentes |
WO2018098436A1 (fr) | 2016-11-28 | 2018-05-31 | Spy Eye, Llc | Dispositif d'affichage non obstruant monté sur l'oeil |
US10673414B2 (en) | 2018-02-05 | 2020-06-02 | Tectus Corporation | Adaptive tuning of a contact lens |
US10505394B2 (en) | 2018-04-21 | 2019-12-10 | Tectus Corporation | Power generation necklaces that mitigate energy absorption in the human body |
US10838239B2 (en) | 2018-04-30 | 2020-11-17 | Tectus Corporation | Multi-coil field generation in an electronic contact lens system |
US10895762B2 (en) | 2018-04-30 | 2021-01-19 | Tectus Corporation | Multi-coil field generation in an electronic contact lens system |
US10790700B2 (en) | 2018-05-18 | 2020-09-29 | Tectus Corporation | Power generation necklaces with field shaping systems |
US11137622B2 (en) | 2018-07-15 | 2021-10-05 | Tectus Corporation | Eye-mounted displays including embedded conductive coils |
US10529107B1 (en) | 2018-09-11 | 2020-01-07 | Tectus Corporation | Projector alignment in a contact lens |
US10838232B2 (en) | 2018-11-26 | 2020-11-17 | Tectus Corporation | Eye-mounted displays including embedded solenoids |
US10644543B1 (en) | 2018-12-20 | 2020-05-05 | Tectus Corporation | Eye-mounted display system including a head wearable object |
US10944290B2 (en) | 2019-08-02 | 2021-03-09 | Tectus Corporation | Headgear providing inductive coupling to a contact lens |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
KR20110063700A (ko) * | 2002-12-26 | 2011-06-13 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 인광물질 변환 led들에 대한 색채 온도 정정 |
JP4279698B2 (ja) * | 2004-01-30 | 2009-06-17 | シャープ株式会社 | Led素子の駆動方法及び駆動装置、照明装置並びに表示装置 |
WO2009095817A1 (fr) * | 2008-01-31 | 2009-08-06 | Koninklijke Philips Electronics N.V. | Unité d'éclairage et système et procédé de gestion thermique associés |
CN102474932B (zh) * | 2009-06-30 | 2015-12-16 | 3M创新有限公司 | 具有可调节色温的白光电致发光器件 |
US8624505B2 (en) * | 2010-05-28 | 2014-01-07 | Tsmc Solid State Lighting Ltd. | Light color and intensity adjustable LED |
JP2012155114A (ja) * | 2011-01-26 | 2012-08-16 | Sony Corp | 表示システムおよびバックライトシステム |
US8921875B2 (en) * | 2011-05-10 | 2014-12-30 | Cree, Inc. | Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods |
US8981665B1 (en) * | 2011-06-08 | 2015-03-17 | Google Inc. | Color shifting pumped-phosphor light emitting diode light sources via modulation of current pulses |
-
2013
- 2013-10-25 FR FR1360417A patent/FR3012677B1/fr not_active Expired - Fee Related
-
2014
- 2014-10-24 EP EP14789275.6A patent/EP3061316A1/fr not_active Withdrawn
- 2014-10-24 WO PCT/EP2014/072899 patent/WO2015059295A1/fr active Application Filing
- 2014-10-24 US US15/031,881 patent/US20160270187A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2015059295A1 (fr) | 2015-04-30 |
US20160270187A1 (en) | 2016-09-15 |
FR3012677A1 (fr) | 2015-05-01 |
EP3061316A1 (fr) | 2016-08-31 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 3 |
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PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |
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PLFP | Fee payment |
Year of fee payment: 6 |
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ST | Notification of lapse |
Effective date: 20200905 |