CN102473825B - 发光二极管和用于制造发光二极管的方法 - Google Patents

发光二极管和用于制造发光二极管的方法 Download PDF

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Publication number
CN102473825B
CN102473825B CN201080031876.2A CN201080031876A CN102473825B CN 102473825 B CN102473825 B CN 102473825B CN 201080031876 A CN201080031876 A CN 201080031876A CN 102473825 B CN102473825 B CN 102473825B
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CN
China
Prior art keywords
light
emitting diode
supporting mass
reflecting element
backlight unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080031876.2A
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English (en)
Chinese (zh)
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CN102473825A (zh
Inventor
格特鲁德·克劳特
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Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Publication of CN102473825A publication Critical patent/CN102473825A/zh
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Led Device Packages (AREA)
CN201080031876.2A 2009-07-15 2010-06-29 发光二极管和用于制造发光二极管的方法 Expired - Fee Related CN102473825B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009033287.1 2009-07-15
DE102009033287A DE102009033287A1 (de) 2009-07-15 2009-07-15 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
PCT/EP2010/059217 WO2011006754A1 (de) 2009-07-15 2010-06-29 Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Publications (2)

Publication Number Publication Date
CN102473825A CN102473825A (zh) 2012-05-23
CN102473825B true CN102473825B (zh) 2015-02-25

Family

ID=42670645

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080031876.2A Expired - Fee Related CN102473825B (zh) 2009-07-15 2010-06-29 发光二极管和用于制造发光二极管的方法

Country Status (7)

Country Link
US (1) US8581288B2 (cg-RX-API-DMAC7.html)
EP (1) EP2454765A1 (cg-RX-API-DMAC7.html)
JP (1) JP5685249B2 (cg-RX-API-DMAC7.html)
KR (1) KR101649287B1 (cg-RX-API-DMAC7.html)
CN (1) CN102473825B (cg-RX-API-DMAC7.html)
DE (1) DE102009033287A1 (cg-RX-API-DMAC7.html)
WO (1) WO2011006754A1 (cg-RX-API-DMAC7.html)

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* Cited by examiner, † Cited by third party
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DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
CN108565329A (zh) 2011-11-17 2018-09-21 株式会社流明斯 发光元件封装体以及包括该发光元件封装体的背光单元
CN105684174B (zh) * 2013-11-07 2018-10-09 亮锐控股有限公司 用于led的具有包围led的全内反射层的衬底
US9834456B2 (en) 2015-06-08 2017-12-05 Rayvio Corporation Ultraviolet disinfection system
US9540252B1 (en) 2015-06-08 2017-01-10 Rayvio Corporation Ultraviolet disinfection system
US10246348B2 (en) 2015-06-08 2019-04-02 Rayvio Corporation Ultraviolet disinfection system
DE102017110850B4 (de) * 2017-05-18 2024-12-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI648878B (zh) * 2018-05-15 2019-01-21 東貝光電科技股份有限公司 Led發光源、led發光源之製造方法及其直下式顯示器
DE102018132542A1 (de) 2018-12-17 2020-06-18 Osram Opto Semiconductors Gmbh Optoelektronische leuchtvorrichtung und herstellungsverfahren
WO2020139022A1 (ko) 2018-12-27 2020-07-02 안상정 반도체 발광소자
KR20200129867A (ko) * 2019-05-10 2020-11-18 안상정 반도체 발광소자
CN113544861B (zh) * 2019-03-08 2024-08-27 奥斯兰姆奥普托半导体有限责任公司 用于生产光电半导体器件的方法以及光电半导体器件
US20220293824A1 (en) * 2020-04-17 2022-09-15 Ningbo Sunpu Led Co., Ltd. Ultraviolet led device
WO2024227770A1 (en) * 2023-05-03 2024-11-07 Ams-Osram International Gmbh Package for a semiconductor chip, optoelectronic semiconductor device, method for manufacturing a package for a semiconductor chip and method for manufacturing an optoelectronic semiconductor device
DE112024000872T5 (de) * 2023-05-17 2025-12-11 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
DE102023136869A1 (de) * 2023-12-29 2025-07-03 Ams-Osram International Gmbh Herstellung eines strahlungsemittierenden bauelements

Citations (7)

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WO1996021168A1 (en) * 1995-01-06 1996-07-11 W.L. Gore & Associates, Inc. Light reflectant surface and method for making and using same
WO2003038912A2 (de) * 2001-10-31 2003-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
CN1934715A (zh) * 2004-03-23 2007-03-21 奥斯兰姆奥普托半导体有限责任公司 具有多部件的壳体的光电子组件
CN101088172A (zh) * 2004-11-03 2007-12-12 特里多尼克光电子有限公司 具有颜色转换材料的发光二极管排布
US20080062688A1 (en) * 2006-09-11 2008-03-13 3M Innovative Properties Company Illumination devices and methods for making the same
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof

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JP3003500B2 (ja) 1994-04-28 2000-01-31 ダイキン工業株式会社 ポリテトラフルオロエチレン複合多孔膜
US6950220B2 (en) * 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
CN1798830A (zh) 2003-04-04 2006-07-05 诺维信公司 减小糖化醪的粘性
JP4183175B2 (ja) 2003-04-21 2008-11-19 京セラ株式会社 発光素子収納用パッケージおよび発光装置
US8669572B2 (en) * 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US7537374B2 (en) * 2005-08-27 2009-05-26 3M Innovative Properties Company Edge-lit backlight having light recycling cavity with concave transflector
US7601989B2 (en) * 2007-03-27 2009-10-13 Philips Lumileds Lighting Company, Llc LED with porous diffusing reflector
TWI448643B (zh) * 2007-05-20 2014-08-11 3M Innovative Properties Co 背光與利用背光之顯示系統
JP2009032943A (ja) * 2007-07-27 2009-02-12 Japan Gore Tex Inc 発光素子用プリント配線基板
TWI494655B (zh) * 2008-02-07 2015-08-01 3M Innovative Properties Co 具有結構性薄膜之空孔背光裝置及具有該空孔背光裝置之顯示器
JP5792464B2 (ja) * 2008-02-22 2015-10-14 スリーエム イノベイティブ プロパティズ カンパニー 選択的出力光束分布を有するバックライト及びそれを使用した表示システム並びにバックライトの形成方法

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Publication number Priority date Publication date Assignee Title
WO1996021168A1 (en) * 1995-01-06 1996-07-11 W.L. Gore & Associates, Inc. Light reflectant surface and method for making and using same
WO2003038912A2 (de) * 2001-10-31 2003-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
CN1934715A (zh) * 2004-03-23 2007-03-21 奥斯兰姆奥普托半导体有限责任公司 具有多部件的壳体的光电子组件
CN101088172A (zh) * 2004-11-03 2007-12-12 特里多尼克光电子有限公司 具有颜色转换材料的发光二极管排布
US20080062688A1 (en) * 2006-09-11 2008-03-13 3M Innovative Properties Company Illumination devices and methods for making the same
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof

Also Published As

Publication number Publication date
US8581288B2 (en) 2013-11-12
JP5685249B2 (ja) 2015-03-18
KR20120039023A (ko) 2012-04-24
DE102009033287A1 (de) 2011-01-20
JP2012533182A (ja) 2012-12-20
WO2011006754A1 (de) 2011-01-20
US20120132947A1 (en) 2012-05-31
EP2454765A1 (de) 2012-05-23
KR101649287B1 (ko) 2016-08-18
CN102473825A (zh) 2012-05-23

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