CN102471888B - 纹理化dlc涂层的方法及由此获得的纹理化的dlc涂层 - Google Patents

纹理化dlc涂层的方法及由此获得的纹理化的dlc涂层 Download PDF

Info

Publication number
CN102471888B
CN102471888B CN201080028626.3A CN201080028626A CN102471888B CN 102471888 B CN102471888 B CN 102471888B CN 201080028626 A CN201080028626 A CN 201080028626A CN 102471888 B CN102471888 B CN 102471888B
Authority
CN
China
Prior art keywords
globe
veining
spherule
dlc coating
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080028626.3A
Other languages
English (en)
Other versions
CN102471888A (zh
Inventor
卡罗琳·舒凯
锡德里克·迪克罗
杰罗姆·加维莱
弗雷德里克·桑谢特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Publication of CN102471888A publication Critical patent/CN102471888A/zh
Application granted granted Critical
Publication of CN102471888B publication Critical patent/CN102471888B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
    • B05D1/265—Extrusion coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2350/00—Pretreatment of the substrate
    • B05D2350/30—Change of the surface
    • B05D2350/33—Roughening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2401/00—Form of the coating product, e.g. solution, water dispersion, powders or the like
    • B05D2401/30—Form of the coating product, e.g. solution, water dispersion, powders or the like the coating being applied in other forms than involving eliminable solvent, diluent or dispersant
    • B05D2401/32—Form of the coating product, e.g. solution, water dispersion, powders or the like the coating being applied in other forms than involving eliminable solvent, diluent or dispersant applied as powders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/142—Pretreatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Abstract

本发明涉及纹理化DLC涂层的方法，包括：在DLC涂层的自由表面上沉积球状物或球状体的单层；用氧等离子体干法蚀刻DLC涂层；和清洗所述涂层的表面以去除所述球状物或球状体。

Description

纹理化DLC涂层的方法及由此获得的纹理化的DLC涂层
发明背景 
本发明首先涉及一种用于修饰并且特别是纹理化类金刚石碳(DLC)表面涂层的特定方法。 
现在这样的涂层或膜众所周知，通常由氢化非晶碳的膜形成，氢化非晶碳的膜具有高硬度、低摩擦系数、粘附、电绝缘和化学惰性的性质，这些性质在摩擦应用方面特别有用。 
术语“DLC”主要用来指所谓的氢化非晶碳，以a-C:H表示；确信DLC在专业文献中有着明确的定义(J.Robertson，Materials Science and Engineering R(27)，2002，129-281.)。 
尽管迄今已知DLC涂层具有低摩擦系数性质，但在针对特定应用优化所述性质方面正在进行研究。 
这是本发明的目的。 
发明内容
本发明涉及一种纹理化DLC涂层的方法，所述方法包括： 
-在DLC涂层的自由或上表面上沉积球状物(bille)或球状体(sphère)的单层； 
-用氧等离子体干法蚀刻DLC涂层； 
-最后，清洗所述涂层的表面以去除所述球状物或球状体。 
换句话说，本发明涉及用简单的方法纹理化DLC涂层，所述方法限于实施三个步骤，省去常规蚀刻技术如光刻。 
这样做，根据本发明的方法用于限制如使用蚀刻方法例如激光烧蚀可能产生的对DLC涂层的这类潜在损害，伴随所述涂层性质劣化。 
本发明特别适用于处理具有轮廓(换句话说，是非平面的)的机器发动机部件的DLC涂布表面，特别是具有3D几何形状的那些。 
根据本发明，DLC用来指氢化非晶碳材料，以a-C:H表示。 
根据本发明，球状物或球状体的单层可采用所谓的朗缪尔-布洛尔杰特(Langmuir-Blodgett)技术沉积。该技术(现在已完全掌握)用于从液体浴向基材的表面转移纳米颗粒或微颗粒的单层。 
这样做，可以采用这种技术沉积不同性质的球状物或球状体，特别是由二氧化硅或聚合物(例如特别是胶乳或聚苯乙烯)制成的那些，所述球状物或球状体的直径可以在100纳米到超过10微米之间。 
已知该技术使得能够以高组装速率获得球状物或球状体的均匀单层。 
或者，球状物或球状体的单层可采用称为“浸涂”的技术沉积。当需要纹理化大表面或三维几何形状时，优选该技术。 
此外，除了用于分散球状物或球状体的溶剂之外，液体浴还可以包含表面活性剂，例如 
Figure BDA0000124868890000021
根据本发明，利用允许优先攻击DLC涂层而不是构成球状物或球状体的材料(特别是二氧化硅)的选择性化学工艺，特别是利用氧等离子体干法蚀刻DLC涂层。 
或者，球状物可由聚合物如胶乳或聚苯乙烯组成。 
根据本发明，蚀刻后，可在乙醇浴中清洗DLC涂层的表面，使得可去除所述球状物或球状体。去除用来指从表面除去球状物。 
由于所用处理，在DLC涂层表面上实施的纹理化的特征在于：存在不同尺寸的孔洞或空穴，所述空穴的大小由所用球状物的大小决定。所述空穴可能可以彼此连通。 
根据本发明，所述孔洞因子(换句话说，每单位表面积的孔洞数)可通过在用氧等离子体蚀刻之前实施SF6+CHF3等离子体蚀刻的中间步骤而增加。 
本发明还涉及具有根据本发明方法纹理化的DLC型表面涂层的机器磨损或摩擦部件。 
这些机器部件的涂层的孔洞因子，即每单位所述涂层表面积的孔洞或空穴数，可由此高于10％。 
此外，DLC型涂层的表面上存在的至少一些孔洞或空穴是连通的，以促进润滑剂的流通。 
附图简述 
由作为实例给出并由附图非限制性地支持的下列实施方案，可实施本发明的方式及所得优点会变得更清楚，在附图中： 
图1为涂布有DLC涂层并具有根据本发明方法的球状物或球状体单层的基材的示意性侧视图。 
图2为蚀刻步骤后获得的与图1相似的视图。 
图3为清洗后(换句话说，除去球状物或球状体的层后)涂层表面的图，图4是其顶视图。 
图5和6分别为示出对于未纹理化的DLC涂层和根据本发明纹理化的涂层“球盘”型摩擦装置内摩擦系数随钢珠所经过的距离的变化的图。 
发明详述 
根据本发明，所述方法的第一步因此包括在DLC涂层(1)的表面上沉积球状物或球状体的单层(4)。DLC涂层(1)通常沉积在预涂布有底涂层(2)的基材(3)上，基材(3)可例如由氢化碳化硅制成。 
为此，可使用来自NANOMETRIX公司的适合于朗缪尔-布洛尔杰特技术的一套设备。 
为此，使用由二氧化硅制成的直径为一微米并且分散度为约10％的球状物，将所述球状物投入在有利由丁醇构成的溶剂中的溶液。 
或者，可以使用水和乙醇的混合物。所需的条件是含球状物的溶剂能充分润湿DLC。 
所用溶液的球状物浓度为约37.5g/l。通常，该浓度必须为30-50g/l。 
一旦球状物已沉积，就在空气中蒸发溶剂以使球状物的自组装结构凝 结在涂层的表面上。 
然后实施本发明方法的第二步，其为等离子体蚀刻DLC涂层。该蚀刻采用具有如下参数的“反应性离子蚀刻”或RIE技术进行： 
气体种类：氧 
流量：80标准毫升/分钟 
功率：10W 
压力：3Pa 
电压：320V。 
在这些条件下进行所述蚀刻提供约0.53nm/s的DLC层蚀刻速率。 
使用所述氧等离子体意味着在DLC涂层和球状物构成的二氧化硅之间获得非常高的选择性，比率通常为22比1。这样做，等离子体非常优先攻击所述DLC涂层而不是球状物，球状物充当一种掩模。这样，产生从DLC涂层的上表面(6)延伸的空穴(5)。 
然后下一步是在蚀刻后清洗DLC涂层的表面。该清洗包括去除球状物的单层。所述去除通常通过将蚀刻后的组装体在乙醇浴中浸泡十五分钟并使其经受超声波而获得。作为超声波的替代方案，任何软机械技术均可采用(摩擦、清除等)，以从涂层释放球状物。 
由此获得图3和4中所示类型的涂层。特别地，可观察到具有不同尺寸的蚀刻图案(5)，所述图案或空穴的大小由所用球状物的大小决定。 
可注意到，如果看作是紧凑的堆叠体，即球状物或球状体在涂层的表面上具有最大可能的自组装，则空穴的容积V由下面的关系式给出： 
V = ( 3 - π 2 ) r 2 d
其中的符号，r表示球状物的半径，d为空穴的深度。 
可观察到，无论所用球状物的大小如何，紧凑的堆叠体均得到10％的孔洞因子，球状物的大小由此仅决定空穴或孔洞的大小。 
但所述因子可通过使用SF6+CHF3等离子体实施中间蚀刻步骤而增 加，所述中间蚀刻步骤因此用于减小球状物的大小。 
所述中间步骤此时用于选择性地蚀刻二氧化硅球状物而不是DLC型涂层。球状物的平均直径因此减小，但自组装保持，并且由于SF6+CHF3等离子体不会改变球状物之间的组装的性质，因此球状物保持位于与单层沉积步骤结束时相同的位置。 
因此，通过将球状物的直径从500nm减小到400nm，图案的孔洞因子从10％增加到42％。 
这样做，在DLC涂层的干法蚀刻之前，可以通过选择性化学工艺并且特别是使用SF6+CHF3等离子体实施球状物或球状体的受控蚀刻。 
因此可以根据所研究的接触(contact)的几何形状和大小来调节DLC涂层表面上图案或空穴的尺寸，从而调整涂层的摩擦性质。 
特别地，所述另外的蚀刻步骤使得能够产生完全连通、均匀和无方向性的空穴，使得在使用具有所述涂层的机器部件时，可使相关流体例如润滑剂流动。所述润滑剂因此不再局限在离散的空穴中，从而确保润滑剂更好地分布在整个部件上，特别是在持续存在机械应力如摩擦的地方。 
所进行的试验表明DLC涂层的纹理化不具有优选的方向，使得所得图案不决定摩擦的方向，这与采用产生均匀并且有方向性的图案的现有技术的纹理化方法不一样。 
借助CSM公司提供的“球盘”型摩擦计用100Cr6钢珠在根据本发明获得的涂层上进行摩擦试验。 
使用如下参数，获得了如图5和6中所示的结果： 
-赫兹压力：1.1GPa 
-转速：5.5cm/s 
-经过的距离：5780m 
-发动机润滑剂：8mL(标准油) 
由此可以在图5和6上观察分别对于未纹理化的DLC涂层(图5)和根据本发明用直径为1μm的二氧化硅球状物实施的掩模纹理化并且DLC涂 层蚀刻深度为约300nm的DLC涂层(图6)的摩擦系数随钢珠所经过的距离的变化。 
由此可以注意到，对于未纹理化的DLC涂层，摩擦系数为约0.07，而对于纹理化的DLC，摩擦系数在0.035左右，从而显著优化摩擦性质。 
本发明还涉及前述方法用于制造经受磨损或摩擦的机器部件的用途。特别地，该容易使用的方法可直接用于具有复杂几何形状的部件。 

Claims (10)

1.一种纹理化DLC涂层的方法，所述方法包括：
-在所述DLC涂层的自由表面上沉积球状物或球状体的单层，
-通过选择性化学工艺用SF6+CHF3等离子体进行所述球状物或球状体的受控蚀刻，
-用氧等离子体选择性干法蚀刻所述DLC涂层，
-最后，清洗所述涂层以去除所述球状物或球状体。
2.如权利要求1所述的纹理化DLC涂层的方法，其中采用朗缪尔-布洛尔杰特技术沉积所述球状物或球状体的单层。
3.如权利要求1所述的纹理化DLC涂层的方法，其中采用浸涂技术沉积所述球状物或球状体的单层。
4.如权利要求1-3中的一项所述的纹理化DLC涂层的方法，其中在蚀刻之后通过浸泡在乙醇浴中来清洗所述DLC涂层的表面以去除所述球状物或球状体。
5.如权利要求4所述的纹理化DLC涂层的方法，其中还使所述乙醇浴经受超声波。
6.如权利要求1-3中的一项所述的纹理化DLC涂层的方法，其中所述球状物或球状体由二氧化硅或聚合物制成。
7.如权利要求1-3中的一项所述的纹理化DLC涂层的方法，其中所述球状物或球状体由胶乳或聚苯乙烯制成。
8.如权利要求1-3中的一项所述的纹理化DLC涂层的方法，其中所述球状物或球状体的直径为100纳米到10微米。
9.如权利要求1-8中任一项所述的方法用于制造经受磨损或摩擦的机器部件的用途。
10.一种机器磨损或摩擦部件，所述部件具有根据权利要求1-8中任一项所述的方法纹理化的DLC表面涂层，所述涂层在纹理化后具有空穴，其容积V由下面的关系式给出：
V = ( 3 - π 2 ) r 2 d
其中的符号：
-r表示球状物或球状体的半径，
-d为所述空穴的深度。
CN201080028626.3A 2009-07-17 2010-06-09 纹理化dlc涂层的方法及由此获得的纹理化的dlc涂层 Expired - Fee Related CN102471888B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0954965 2009-07-17
FR0954965A FR2948039B1 (fr) 2009-07-17 2009-07-17 Procede pour la texturation de revetements type dlc, et revetements type dlc ainsi textures
PCT/FR2010/051144 WO2011007064A1 (fr) 2009-07-17 2010-06-09 Procédé pour la texturation de revêtements type dlc, et revêtements type dlc ainsi texturés

Publications (2)

Publication Number Publication Date
CN102471888A CN102471888A (zh) 2012-05-23
CN102471888B true CN102471888B (zh) 2014-03-12

Family

ID=41503586

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080028626.3A Expired - Fee Related CN102471888B (zh) 2009-07-17 2010-06-09 纹理化dlc涂层的方法及由此获得的纹理化的dlc涂层

Country Status (9)

Country Link
US (1) US9040141B2 (zh)
EP (1) EP2454395B1 (zh)
JP (1) JP5639167B2 (zh)
KR (1) KR20120031479A (zh)
CN (1) CN102471888B (zh)
BR (1) BRPI1009627A2 (zh)
ES (1) ES2436075T3 (zh)
FR (1) FR2948039B1 (zh)
WO (1) WO2011007064A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3016875B1 (fr) 2014-01-30 2016-03-04 Commissariat Energie Atomique Structure photonique de surface en materiau refractaire et son procede de realisation.
US10737462B2 (en) * 2016-08-24 2020-08-11 Hyundai Motor Company Method for coating surface of moving part of vehicle and moving part of vehicle manufactured by the same
DE102017121684A1 (de) * 2017-09-19 2019-03-21 Technische Universität Darmstadt Verfahren zum Erzeugen einer strukturierten Oberfläche
CN107857234B (zh) * 2017-11-01 2020-10-27 西安交通大学 一种ecr离子刻蚀加工表面织构并精确控制织构尺寸方法
CN108190830A (zh) * 2017-12-29 2018-06-22 长沙新材料产业研究院有限公司 一种高深宽比金刚石微纳米结构的制作方法
EP3608727A1 (fr) * 2018-08-09 2020-02-12 Nivarox-FAR S.A. Composant notamment horloger avec une topologie de surface et son procédé de fabrication
KR102041387B1 (ko) * 2019-04-25 2019-11-07 (주)씨에스메탈 Dlc 코팅 도마 및 그의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524874B1 (en) * 1998-08-05 2003-02-25 Micron Technology, Inc. Methods of forming field emission tips using deposited particles as an etch mask
WO2007046165A1 (ja) * 2005-10-19 2007-04-26 Central Japan Railway Company 針状突起配列構造を表面に有するダイヤモンドの製造方法、ダイヤモンド材料、電極、及び電子デバイス
WO2008050913A1 (fr) * 2006-10-27 2008-05-02 Shinji Takeoka Structure polymère de type film et son procédé de préparation
CN101479031A (zh) * 2006-06-30 2009-07-08 王子制纸株式会社 单粒子膜蚀刻掩模及其制造方法、使用该单粒子膜蚀刻掩模的微细结构体的制造方法及通过该制造方法得到的微细结构体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58120255A (ja) * 1981-12-31 1983-07-18 エクソン・リサ−チ・アンド・エンジニアリング・カンパニ− 平版印刷マスクの製造方法
US5560839A (en) * 1994-06-27 1996-10-01 Valenite Inc. Methods of preparing cemented metal carbide substrates for deposition of adherent diamond coatings and products made therefrom
JPH11278990A (ja) * 1998-03-31 1999-10-12 Tdk Corp ダイヤモンド状炭素膜の加工方法
JP4331292B2 (ja) * 1998-10-30 2009-09-16 株式会社リケン 低摩耗性と優れた密着性を有する複合ダイヤモンドライクカーボン皮膜
JP2001065571A (ja) * 1999-06-25 2001-03-16 Tdk Corp 動圧流体軸受
JP2001143608A (ja) * 1999-11-15 2001-05-25 Sony Corp 炭素薄膜の加工方法、冷陰極電界電子放出素子の製造方法、及び冷陰極電界電子放出表示装置の製造方法
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
US20060246218A1 (en) * 2005-04-29 2006-11-02 Guardian Industries Corp. Hydrophilic DLC on substrate with barrier discharge pyrolysis treatment
JP5209211B2 (ja) * 2006-04-25 2013-06-12 哲男 日野 カーボン材料とフェニレン誘導体との反応生成物およびそれを用いた導電性組成物、ならびに反応生成物の製法
JP5172180B2 (ja) * 2007-03-19 2013-03-27 トーヨーエイテック株式会社 Ｄｌｃ膜の修飾方法及び、医療用材料、医療用器具の製造方法
FR2918981B1 (fr) * 2007-07-20 2009-09-04 Saint Gobain Procede de texturation de surface d'un substrat a fonction verriere, produit verrier a surface texturee.
KR101344493B1 (ko) * 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
JP2009241275A (ja) * 2008-03-28 2009-10-22 Toshiba Corp 樹脂インプリントスタンパおよびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524874B1 (en) * 1998-08-05 2003-02-25 Micron Technology, Inc. Methods of forming field emission tips using deposited particles as an etch mask
WO2007046165A1 (ja) * 2005-10-19 2007-04-26 Central Japan Railway Company 針状突起配列構造を表面に有するダイヤモンドの製造方法、ダイヤモンド材料、電極、及び電子デバイス
CN101479031A (zh) * 2006-06-30 2009-07-08 王子制纸株式会社 单粒子膜蚀刻掩模及其制造方法、使用该单粒子膜蚀刻掩模的微细结构体的制造方法及通过该制造方法得到的微细结构体
WO2008050913A1 (fr) * 2006-10-27 2008-05-02 Shinji Takeoka Structure polymère de type film et son procédé de préparation

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
基于直接胶体晶体刻蚀技术的高度有序纳米硅阵列的尺寸及形貌控制;李卫等;《物理学报》;20070715(第07期);全文 *
李卫等.基于直接胶体晶体刻蚀技术的高度有序纳米硅阵列的尺寸及形貌控制.《物理学报》.2007,(第07期),

Also Published As

Publication number Publication date
JP5639167B2 (ja) 2014-12-10
US9040141B2 (en) 2015-05-26
EP2454395B1 (fr) 2013-09-11
JP2012533501A (ja) 2012-12-27
FR2948039B1 (fr) 2011-11-25
KR20120031479A (ko) 2012-04-03
EP2454395A1 (fr) 2012-05-23
FR2948039A1 (fr) 2011-01-21
ES2436075T3 (es) 2013-12-26
US20120183731A1 (en) 2012-07-19
BRPI1009627A2 (pt) 2018-02-14
WO2011007064A1 (fr) 2011-01-20
CN102471888A (zh) 2012-05-23

Similar Documents

Publication Publication Date Title
CN102471888B (zh) 纹理化dlc涂层的方法及由此获得的纹理化的dlc涂层
KR101726402B1 (ko) 유수분리 구조체 및 그 제조방법, 유수분리 장치, 및 상기 유수분리 장치를 이용한 유수분리방법
Ji et al. Simple fabrication approach for superhydrophobic and superoleophobic Al surface
Ras et al. Non-wettable surfaces: theory, preparation and applications
Rodrigues et al. Water and oil wettability of anodized 6016 aluminum alloy surface
Gou et al. Surface topographies of biomimetic superamphiphobic materials: design criteria, fabrication and performance
US20150259221A1 (en) Oil-water separation structure, method of preparing the same, oil-water separator, and oil-water separation method using oil-water separator
WO2006121909A2 (en) Friction drag-reducing surface
JP5425111B2 (ja) 浸漬法を利用した疎水性表面を有する３次元形状構造物の製造方法
KR20110048545A (ko) 제조방법에 특징이 있는 매우 미끄러운 박층의 이용방법
Liu et al. 3D-printed bionic superhydrophobic surface with petal-like microstructures for droplet manipulation, oil-water separation, and drag reduction
Telecka et al. Nanotextured Si surfaces derived from block-copolymer self-assembly with superhydrophobic, superhydrophilic, or superamphiphobic properties
WO2014201407A1 (en) Formation of superhydrophobic surfaces
KR100898124B1 (ko) 소수성 내부 표면을 갖는 3차원 형상 구조물의 제조방법
Qiao et al. The effect of attributes of micro-shapes of laser surface texture on the wettability of WC-CrCo metal ceramic coatings
Zhang et al. Fabrication of micro-/submicro-/nanostructured polypropylene/graphene superhydrophobic surfaces with extreme dynamic pressure resistance assisted by single hierarchically porous anodic aluminum oxide template
Liu et al. New insights into unusual droplets: from mediating the wettability to manipulating the locomotion modes
JP5337823B2 (ja) 金属箔を利用した疎水性表面を有する３次元形状構造物の製造方法
Esmaeilzadeh et al. Tuning the wetting properties of SiO2-based nanofluids to create durable surfaces with special wettability for self-cleaning, anti-fouling, and oil–water separation
KR20140046165A (ko) 초발수성 금속 표면 제조 방법
Zacharatos et al. Highly ordered hexagonally arranged nanostructures on silicon through a self-assembled silicon-integrated porous anodic alumina masking layer
Phan et al. Fabrication of high aspect ratio silicon micro-/nano-pore arrays and surface modification aiming at long lifetime liquid-infused-type self-cleaning function
KR101374095B1 (ko) 초발수 및 초발유성 표면 구현을 위한 나노 구조물 제조 방법
CN109727858A (zh) 定向自组装模板转移方法
KR100539664B1 (ko) 유체 마찰력 감소장치 및 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140312

Termination date: 20180609