CN102468450A - Manufacturing method of organic light emitting display device - Google Patents
Manufacturing method of organic light emitting display device Download PDFInfo
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- CN102468450A CN102468450A CN2010105476961A CN201010547696A CN102468450A CN 102468450 A CN102468450 A CN 102468450A CN 2010105476961 A CN2010105476961 A CN 2010105476961A CN 201010547696 A CN201010547696 A CN 201010547696A CN 102468450 A CN102468450 A CN 102468450A
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Abstract
The invention relates to a manufacturing method of an organic electroluminescent display device. The method comprises the following steps of: forming an ITO (Indium Tin Oxide) anode on a substrate; forming an insulating layer and a cathode isolating layer on the anode layer; and depositing various organic layers and metal cathode layers on the cathode isolating layer. In the invention, the insulating layer and a cathode isolating post are formed by using a process including twice exposure, once developing and once post-baking. Due to the adoption of the manufacturing method, defects in the conventional manufacturing technology of organic electroluminescent device substrates are overcome, and the yield and the production efficiency are increased simultaneously; and the process is simple, and the production cost is reduced.
Description
Technical field
The present invention relates to a kind of electron display device, particularly a kind of organic light emitting display preparation method.
Background technology
Usually organic elctroluminescent device is a kind of sandwich structure; Generally be by last; Following two electrodes and be clipped in wherein between the organic material film with semiconductor property form, organic layer film wherein can be through thermal evaporation, spin coating or other film build methods prepare; When the electrode two ends add forward dc voltage, thus luminous through the injection and the compound device that makes of electronics and holoe carrier.On the make need being engraved on the substrate with certain size and shape with anode and cathode insulated column patterning.Between anode and luminescent layer, must introduce a kind of special organic photoresist as insulating barrier; This photoresist requires dielectric constant enough high, and resistivity is enough high, through the introducing of this organic membrane; Can improve whole insulating properties and the withstand voltage reliability of dielectric layer; Phenomenons such as the electric leakage of alleviating even occurring during abatement device work, sparking, puncture improve the electroluminescent properties of device, have improved the job stability of device.But because insulating barrier and cathode isolation layer all will use the wet method photoetching; Technologically very complicated, production efficiency is low, the more important thing is owing to apply organic photoresist twice; Repeatedly baking; Cause the probability of ITO remained on surface organic substance and other impurity to increase greatly, in addition because insulating barrier and cathode isolation layer all will keep definite shape on substrate, the physics that can not carry out the degree of depth cleans; Can not use the UV ultraviolet to clean, so can't thoroughly remove the contamination that is deposited in glass baseplate surface in twice wet method photoetching.When carrying out the micromolecule organic material film when carrying out evaporation coating, because the open structure of organic thin film layer (generally comprising hole transmission layer/luminescent layer/electron transfer layer) and thin gross thickness (being generally less than 1500) make that the clean-up performance of substrate itself is particularly important.Substrate surface residual organic matter can cause the short circuit of negative electrode and anode with other impurity and open circuit in organic elctroluminescent device; Form the broken string on the display screen and get lines crossed, these all can influence performance (luminosity, the luminous efficiency of device; Device lifetime), reduced yields.In addition; Middle traditionally insulating barrier must be under the high temperature more than 200 ℃ about 1 hour of back baking, guaranteeing the insulating barrier full solidification, and need to carry out again after the cooling next step technology; Such Twi-lithography technology has prolonged the production cycle of product greatly, has reduced output.Therefore the processing step that reduces photoetching seems particularly important.
Summary of the invention
The present invention be directed to long problem of present organic elctroluminescent device production cycle; A kind of organic light emitting display preparation method has been proposed; Preparation method to organic elctroluminescent device improves, and shortens preparation time, thereby enhances productivity.
Technical scheme of the present invention is: a kind of organic light emitting display preparation method, make a substrate that has been carved with metal electrode and ito anode pattern earlier, and pass through the once coating of positive photoresist then; At the equally distributed laminate dielectric layer of ITO surface coverage last layer, carry out preceding baking again, exposure; Then carry out the post bake of certain hour,, carry out preceding baking more then with negative photoresist uniform rete of spin coating last layer thickness on insulating barrier according to the kind of insulating barrier; Exposure, post bake is again through using organic developer solution; The control development conditions; Can obtain the insulating barrier and formation upside-down triangle shape of respective graphical simultaneously, at last this substrate put into dustless baking box, the back baking is 1 hour under 220 ℃ high temperature; The organic light-emitting device substrate is just accomplished, and the method through evaporation or spin coating on this substrate prepares organic function layer and metal back electrode.
The photoresist layer of said insulating barrier need carry out one time post bake again after exposure, what insulating barrier used is positive photoresist, adopts the method film forming of spin coating.
What the photoresist of said cathode isolation layer used is negative photoresist, adopts the method film forming of spin coating.
Beneficial effect of the present invention is: a kind of organic light emitting display preparation method of the present invention, overcome the deficiency in the existing organic electroluminescence device substrate fabrication techniques, and technology is simple, production cost reduces, and improves yields and production efficiency simultaneously.
Description of drawings
Fig. 1 is an organic light emitting display structural representation of the present invention;
Fig. 2 is the manufacturing flow chart of insulating barrier and cathode isolation layer in the present organic electroluminescence device;
Fig. 3 is the manufacturing flow chart of insulating barrier in the organic light emitting display of the present invention and cathode isolation layer.
Embodiment
Organic light emitting display structural representation as shown in Figure 1, it comprises glass substrate 1, transparent conductive film ITO (anode) 2, insulating barrier 3, cathode insulated column 4, organic function layer 5, metallic cathode 6.
Fig. 2,3 is respectively the manufacturing flow chart of tradition and insulating barrier of the present invention and cathode isolation layer; But the invention of comparison knowledge capital can be used technology still less; Because what use is the re-expose once technology of back baking of once developing, owing to reduced the number of times of wet method photoetching, significantly reduced organic material residual probability on the organic electroluminescence device substrate; Also reduced simultaneously the possibility of other impurity contaminations; The evaporation preparation of the organic function layer through thereafter and bonnet encapsulation, the organic electroluminescence device that is obtained is obviously reducing the broken string and the quantity of getting lines crossed on the display screen, thus the performance and the life-span of having improved device.Owing to reduced the operation of drying by the fire behind the insulating barrier, shorten the production cycle in addition, improved production efficiency.
At first make earlier a substrate that has been carved with metal electrode and ito anode pattern according to design, pass through then positive photoresist (for example: once coating polyimides etc.), at the equally distributed laminate dielectric layer of ITO surface coverage last layer; Carry out preceding baking again; The post bake that carries out certain hour according to the kind of insulating barrier is followed in exposure, then with negative photoresist (for example cathode isolation layer special glue) uniform rete of spin coating last layer thickness on insulating barrier; Carry out preceding baking again; Exposure, post bake is again through using specific organic developer solution (for example: also strict control development conditions developer solution TMAHO); The insulating barrier and formation upside-down triangle shape of respective graphical can be obtained simultaneously, the cathode insulated column layer of fine cathode isolation effect can be played.This substrate is put into dustless baking box at last, and the back baking is 1 hour under 220 ℃ high temperature, and the organic light-emitting device substrate has just been accomplished thus.
On this substrate, also need prepare organic function layer and metal back electrode through the method for evaporation or spin coating.
The photoresist layer of the insulating barrier here need carry out one time post bake again after exposure.What insulating barrier used is positive photoresist, adopts the method film forming of spin coating.
In the organic photoresist of the cathode isolation layer that one spin coating got on after the insulating barrier here, its organic photoresist layer can not be dissolved in behind post bake.What the photoresist of cathode isolation layer used is negative photoresist, adopts the method film forming of spin coating.
The development here, its use must be organic developer solution, and this developer solution can all develop to insulating barrier and cathode isolation layer simultaneously.
Claims (3)
1. an organic light emitting display preparation method is characterized in that, makes a substrate that has been carved with metal electrode and ito anode pattern earlier; Through the once coating of positive photoresist,, carry out preceding baking more then at the equally distributed laminate dielectric layer of ITO surface coverage last layer; The post bake that carries out certain hour according to the kind of insulating barrier is followed in exposure, then with negative photoresist uniform rete of spin coating last layer thickness on insulating barrier; Carry out preceding baking again, exposure, post bake; Through using organic developer solution, the control development conditions can obtain the insulating barrier of respective graphical simultaneously and form upside-down triangle shape again; At last this substrate is put into dustless baking box; The back baking is 1 hour under 220 ℃ high temperature, and the organic light-emitting device substrate is just accomplished, and the method through evaporation or spin coating on this substrate prepares organic function layer and metal back electrode.
2. according to the said organic light emitting display preparation method of claim 1, it is characterized in that the photoresist layer of said insulating barrier need carry out one time post bake again after exposure, what insulating barrier used is positive photoresist, adopts the method film forming of spin coating.
3. according to the said organic light emitting display preparation method of claim 1, it is characterized in that what the photoresist of said cathode isolation layer used is negative photoresist, adopt the method film forming of spin coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105476961A CN102468450A (en) | 2010-11-17 | 2010-11-17 | Manufacturing method of organic light emitting display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105476961A CN102468450A (en) | 2010-11-17 | 2010-11-17 | Manufacturing method of organic light emitting display device |
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| CN102468450A true CN102468450A (en) | 2012-05-23 |
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| CN2010105476961A Pending CN102468450A (en) | 2010-11-17 | 2010-11-17 | Manufacturing method of organic light emitting display device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600206A (en) * | 2015-01-13 | 2015-05-06 | 昆山维信诺科技有限公司 | OLED device and method for manufacturing OLED device |
| CN104934548A (en) * | 2015-06-04 | 2015-09-23 | 中国电子科技集团公司第五十五研究所 | Reflection anode of active matrix type organic light emitting display and manufacturing method thereof |
| CN106653579A (en) * | 2017-01-06 | 2017-05-10 | 武汉华星光电技术有限公司 | OLED chroma adjustment method |
| WO2018041064A1 (en) * | 2016-08-31 | 2018-03-08 | 昆山维信诺科技有限公司 | Wiring method for specially-shaped oled product, and special-shaped oled product |
-
2010
- 2010-11-17 CN CN2010105476961A patent/CN102468450A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600206A (en) * | 2015-01-13 | 2015-05-06 | 昆山维信诺科技有限公司 | OLED device and method for manufacturing OLED device |
| CN104934548A (en) * | 2015-06-04 | 2015-09-23 | 中国电子科技集团公司第五十五研究所 | Reflection anode of active matrix type organic light emitting display and manufacturing method thereof |
| WO2018041064A1 (en) * | 2016-08-31 | 2018-03-08 | 昆山维信诺科技有限公司 | Wiring method for specially-shaped oled product, and special-shaped oled product |
| TWI643331B (en) * | 2016-08-31 | 2018-12-01 | 大陸商昆山維信諾科技有限公司 | Special-shaped organic light-emitting diode wiring method and special-shaped organic light-emitting diode product |
| US10763453B2 (en) | 2016-08-31 | 2020-09-01 | Kunshan Visionox Technology Co., Ltd. | Wiring method for special-shaped OLED product and special-shaped OLED product |
| CN106653579A (en) * | 2017-01-06 | 2017-05-10 | 武汉华星光电技术有限公司 | OLED chroma adjustment method |
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Application publication date: 20120523 |