CN104934548A - Reflection anode of active matrix type organic light emitting display and manufacturing method thereof - Google Patents
Reflection anode of active matrix type organic light emitting display and manufacturing method thereof Download PDFInfo
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- CN104934548A CN104934548A CN201510301935.8A CN201510301935A CN104934548A CN 104934548 A CN104934548 A CN 104934548A CN 201510301935 A CN201510301935 A CN 201510301935A CN 104934548 A CN104934548 A CN 104934548A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention relates to the structure of a reflection anode of an active matrix type organic light emitting display and a manufacturing method of the reflection anode. The invention is characterized in that the anode electrode comprises two layers of metal films, the first layer of metal is aluminum with the thickness being 100nm-700nm, and the second layer of metal is titanium nitride with the thickness being 5nm-20nm. The two layers of metal films form mutually isolated pixel electrodes through an intermediate isolation layer. The method provided by the invention comprising formation of the two layers of metal films and the isolation layer. According to the invention, process compatibility between an OLED electrode process and a foundry is realized, and the process of a high-performance OLED device can also be realized at the same time.
Description
Technical field
The present invention relates to a kind of reflective anode electrode structure and manufacture method, the manufacture method being specifically related to a kind of reflective anode electrode for organic light emitting apparatus and the reflective anode electrode manufactured by the method.
Background technology
Organic Light Emitting Diode (OLED) display is a kind of self-emission display apparatus by using luminous Organic Light Emitting Diode to show image.The energy produced during by controlling exciton and falling after rise from excitation state produces light.Combine to produce exciton in organic emission layer by electronics and hole.Usual organic light emitting diode display comprises transistor driving matrix and organic light-emitting diode display unit.
Monocrystalline silicon is used to make transistor driving matrix, because monocrystalline silicon has very high mobility, so very high resolution can be realized as substrate.The display size of the organic light emitting diode display using monocrystalline silicon to make as substrate is less than 1 inch usually, belongs to miniature active matrix organic light emitting diode display.In order to realize the high-resolution of micro-display device, the anode pixels size of usual device is in the magnitude of 2um ~ 20um.Use silicon substrate as substrate simultaneously, need the organic light emitting diode device making top emitting.Therefore wish device anode, higher reflectivity will be had on the one hand, the stability in air will be kept on the other hand, need to realize meticulous etched features ability simultaneously.Report such as patent CN 101459226 grade uses Al, Mo, Cr, Ti etc. to use as anode, but the materials such as Mo, Cr usually do not use in Semiconductor foundries.Therefore in order to realize OLED electrode process and foundries technique realizes compatibility, high performance OLED technique can also be realized simultaneously, needing electrode structure and the manufacture craft of development of new.
Summary of the invention
The object of the invention is the problem can not accomplished scale production because of used material for current Organic Light Emitting Diode anode; invent a kind of OLED reflection anode that normally used Al and TiN in Semiconductor foundries can be used to manufacture, its manufacture method is provided simultaneously.
One of technical scheme of the present invention is:
A kind of reflection anode of active matrix type organic luminous display device, it is characterized in that it is by substrate 4 with grow the first metal layer 1 and the second metal level 2 on substrate 4 successively and form, the first metal layer 1 and the second metal level 2 are separated into pixel electrode mutually isolated one by one by intermediate isolating layer 3.
Described substrate 4 is silicon chip or glass.
Described the first metal layer 1 material is aluminium, and thickness is 100nm ~ 700nm; Second metal level 2 material is titanium nitride, and thickness is 5nm ~ 20nm.
The thickness of described intermediate isolating layer 3 is 500nm ~ 900nm; Material used is inorganic material or organic polymer material.
Two of technical scheme of the present invention is:
A manufacture method for the reflection anode of silica-based active matrix type organic luminous display device, is characterized in that:
First, substrate is prepared the first metal layer and the second metal level respectively;
Secondly, then use photolithography patterning method, form independently dot structure;
Finally, prepare intermediate isolating layer at the gap location of pixel to separate.
The intermediate isolating layer making pixel pitch place first adopts PECVD method to deposit preparation SiO
2or SiNx material layer, then carry out polishing and polish electrode surface layer, expose the second metal level.
The intermediate isolating layer making pixel pitch place first uses spin coating method to prepare organic polymer material layer, then carries out exposure imaging process, expose the second metal level.
Three of technical scheme of the present invention is:
A manufacture method for the reflection anode of silica-based active matrix type organic luminous display device, is characterized in that:
First, the first metal layer prepared by substrate, then use photolithography patterning method, form ground floor dot structure;
It is owed, and prepares intermediate isolating layer separate at ground floor dot structure gap location, then carries out polishing and polish and expose the first metal layer;
3rd, first layer metal prepares second layer metal, then uses photolithography patterning method, the second metal level forms second layer dot structure with the ground floor dot structure relative position on the first metal layer;
4th, prepare intermediate isolating layer at second layer dot structure gap location and separate, then carry out polishing and polish and expose the second metal level; For separating the intermediate isolating layer of the ground floor dot structure on the first metal layer and and be that a separator connects for what separate the second dot structure on the second metal level.
Four of technical scheme of the present invention is:
A manufacture method for the reflection anode of silica-based active matrix type organic luminous display device, is characterized in that:
First, anode electrode figure photoresist is prepared by substrate;
Secondly, successive sedimentation the first metal layer and the second metal level on patterned photoresist;
3rd, with an organic solvent stripping is carried out to photoresist and remove photoresist, form metal patternization electrode layer;
4th, fill intermediate isolating layer to the pixel electrode gap location on patterned electrodes layer;
Finally, between centering, separator carries out surface treatment and exposes the second metal level.
Five of technical scheme of the present invention is:
A manufacture method for the reflection anode of silica-based active matrix type organic luminous display device, is characterized in that:
First, substrate is prepared first layer metal layer;
Secondly, graphical treatment is carried out to first layer metal layer and form ground floor dot structure;
3rd, between ground floor dot structure gap, packing material forms intermediate isolating layer, and intermediate isolating layer is SiO
2or SiNx.
4th, grinding and polishing process is carried out to formed intermediate isolating layer, exposes the first metal layer;
5th, depositing second metal layer on the first metal layer;
6th, use photolithography patterning method, the second metal level forms second layer dot structure with the ground floor dot structure relative position on the first metal layer.
The invention has the beneficial effects as follows:
Present invention achieves the process compatible between OLED electrode process and foundries, high performance OLED technique can also be realized simultaneously.
Electrode structure of the present invention is simple, good reliability, and manufacturing process is simple, is conducive to enhancing productivity, and improves rate of finished products, reduces process costs.
Accompanying drawing explanation
Fig. 1 is one of anode construction schematic diagram of the present invention.
Fig. 2 is anode construction schematic diagram two of the present invention.
Fig. 3 is anode construction schematic diagram three of the present invention.
Embodiment
The present invention is further illustrated for Structure Figure and embodiment below.
embodiment one.
As shown in Figure 1:
A manufacture method for the reflection anode of active matrix type organic luminous display device, it comprises the following steps:
(1) method using splash-proofing sputtering metal to deposit on silica-based (or glass) base plate 4, metal Al layer 1 and TiN layer 2 are prepared in successive sedimentation.
(2) in step (1), the thickness of Al layer is 100nm ~ 700nm, and the thickness of TiN layer is 5nm ~ 20nm.
(3) after having prepared metallic film in step (1), on film, the photoresist of i-line in spin coating, carries out the operations such as exposure imaging, realizes the anode electrode figure needed on a photoresist.Then use the methods such as dry etching, metallic film is etched, finally again photoresist is removed, realize the graphical of metallic film.
(4) after step (3) completes, use the methods such as chemical vapor deposition, deposition one deck SiO2 layer, for forming intermediate isolating layer 3 by the gap-fill between metal anode.
(5) after step (4), to the SiO at backboard top
2layer carries out polishing, stops until exposing metal anode layer.
Embodiment two.
As shown in Figure 2:
A manufacture method for the reflection anode of active matrix type organic luminous display device, it comprises the following steps:
(1) method using splash-proofing sputtering metal to deposit on silica-based (or glass) base plate 4, metal Al layer 2 and TiN layer 3 are prepared in successive sedimentation.
(2) in step (1), the thickness of Al layer is 100nm ~ 700nm, and the thickness of TiN layer is 5nm ~ 20nm.
(3) after having prepared metallic film in step (1), on film, the photoresist of i-line in spin coating, carries out the operations such as exposure imaging, realizes the anode electrode figure needed on a photoresist.Then use the methods such as dry etching, metallic film is etched, finally again photoresist is removed, realize the graphical of metallic film.
(4) after step (3) completes, use the methods such as spin coating to prepare organic polymer material, as polyimides, Other substrate materials etc., form intermediate isolating layer 3.
(5) after step (4), carry out exposure imaging process to organic polymer material layer, expose second layer metal TiN, intermediate isolating layer height is higher than TiN layer height simultaneously.
embodiment three.
As shown in Figure 3:
A manufacture method for the reflection anode of active matrix type organic luminous display device, it comprises the following steps:
(1) method using splash-proofing sputtering metal to deposit on silica-based (or glass) base plate 4, the thickness of deposition preparation metal Al layer 1, Al layer is 100nm ~ 500nm.
(2) in metal Al layer 1, the photoresist of i-line in spin coating, carries out the operations such as exposure imaging, realizes the anode electrode figure needed on a photoresist.Then use the methods such as dry etching, metallic film is etched, finally again photoresist is removed, realize the graphical of metallic film.
(3) after step (2) completes, the methods such as chemical vapor deposition are used, deposition one deck SiO
2layer, for by the gap-fill between metal anode, forms intermediate isolating layer 3.
(4) after step (3), to the SiO at backboard top
2layer carries out polishing, stops until exposing metal anode Al layer.
(5) after step (4), use the method for splash-proofing sputtering metal deposition, deposition prepares metal TiN layer 2, and the thickness of TiN layer is 5nm ~ 20nm.In metal TiN layer, the photoresist of i-line in spin coating, carries out the operations such as exposure imaging, realizes the anode electrode figure needed on a photoresist.Then use the methods such as dry etching, metallic film is etched, finally again photoresist is removed, realize the graphical of metallic film.
embodiment four.
A manufacture method for the reflection anode of active matrix type organic luminous display device, it comprises the following steps:
(1) method using splash-proofing sputtering metal to deposit on silica-based (or glass) base plate 4, the thickness of deposition preparation metal Al layer 1, Al layer is 100nm ~ 500nm.
(2) in metal Al layer 1, the photoresist of i-line in spin coating, carries out the operations such as exposure imaging, realizes the anode electrode figure needed on a photoresist.Then use the methods such as dry etching, metallic film is etched, finally again photoresist is removed, realize the graphical of metallic film.
(3) after step (2) completes, the methods such as chemical vapor deposition are used, deposition one deck SiO
2layer, for by the gap-fill between metal anode, forms intermediate isolating layer 3.
(4) after step (3), to the SiO at backboard top
2layer carries out polishing, stops until exposing metal anode Al layer.
(5) after step (4), use the method for splash-proofing sputtering metal deposition, deposition prepares metal TiN layer 2, and the thickness of TiN layer is 5nm ~ 20nm.In metal TiN layer, the photoresist of i-line in spin coating, carries out the operations such as exposure imaging, realizes the anode electrode figure needed on a photoresist.Then use the methods such as dry etching, metallic film is etched, finally again photoresist is removed, realize the graphical of metallic film.
(6) after step (5) completes, use the methods such as spin coating to prepare organic polymer material, as polyimides, Other substrate materials etc., form intermediate isolating layer 3.
(7) after step (6), carry out exposure imaging process to organic polymer material layer, expose second layer metal TiN, intermediate isolating layer height is higher than TiN layer height simultaneously.
embodiment five.
A manufacture method for the reflection anode of silica-based active matrix type organic luminous display device, it comprises the following steps:
(1) on silica-based (or glass) base plate 4, the photoresist of i-line in spin coating, carries out the operations such as exposure imaging, realizes the anode electrode figure needed on a photoresist.
(2) after step (1), on patterned photoresist, make the method for the metal depositions such as deposited by electron beam evaporation, the thickness that metal Al layer 1 and TiN layer 2, Al layer are prepared in successive sedimentation is 100nm ~ 500nm, and the thickness of TiN layer is 5nm ~ 20nm.
(3) after step (2), with an organic solvent stripping is carried out to photoresist and remove photoresist, finally form metal patternization electrode layer.
(4) after step (3) completes, use the methods such as spin coating to prepare organic polymer material, as polyimides, Other substrate materials etc., form intermediate isolating layer 3.
(5) after step (4), exposure imaging process is carried out to organic polymer material layer, expose second layer metal TiN.
The part that the present invention does not relate to prior art that maybe can adopt same as the prior art is realized.
Claims (10)
1. the reflection anode of an active matrix type organic luminous display device, it is characterized in that it is made up of at the upper the first metal layer (1) of substrate (4) and the second metal level (2) substrate (4) and growing successively, the first metal layer (1) and the second metal level (2) are separated into pixel electrode mutually isolated one by one by intermediate isolating layer (3).
2. reflection anode as claimed in claim 1, is characterized in that described substrate (4) is silicon chip or glass.
3. reflection anode as claimed in claim 1, it is characterized in that described the first metal layer (1) material is aluminium, thickness is 100nm ~ 700nm; Second metal level (2) material is titanium nitride, and thickness is 5nm ~ 20nm.
4. reflection anode as claimed in claim 1, is characterized in that the thickness of described intermediate isolating layer (3) is 500nm ~ 900nm; Material used is inorganic material or organic polymer material.
5. a manufacture method for reflection anode according to claim 1, is characterized in that:
First, substrate is prepared the first metal layer and the second metal level respectively;
Secondly, then use photolithography patterning method, form independently dot structure;
Finally, prepare intermediate isolating layer at the gap location of pixel to separate.
6. method as claimed in claim 5, the intermediate isolating layer that it is characterized in that making pixel pitch place first adopts PECVD method to deposit preparation SiO
2or SiNx material layer, then carry out polishing and polish electrode surface layer, expose the second metal level.
7. method as claimed in claim 5, is characterized in that the intermediate isolating layer making pixel pitch place first uses spin coating method to prepare organic polymer material layer, then carries out exposure imaging process, expose the second metal level.
8. a manufacture method for reflection anode according to claim 1, is characterized in that:
First, the first metal layer prepared by substrate, then use photolithography patterning method, form ground floor dot structure;
Secondly, prepare intermediate isolating layer at ground floor dot structure gap location and separate, then carry out polishing and polish and expose the first metal layer;
3rd, first layer metal prepares second layer metal, then uses photolithography patterning method, the second metal level forms second layer dot structure with the ground floor dot structure relative position on the first metal layer;
4th, prepare intermediate isolating layer at second layer dot structure gap location and separate, then carry out polishing and polish and expose the second metal level; For separating the intermediate isolating layer of the ground floor dot structure on the first metal layer and and be that a separator connects for what separate the second dot structure on the second metal level.
9. a manufacture method for reflection anode according to claim 1, is characterized in that:
First, anode electrode figure photoresist is prepared by substrate;
Secondly, successive sedimentation the first metal layer and the second metal level on patterned photoresist;
3rd, with an organic solvent stripping is carried out to photoresist and remove photoresist, form metal patternization electrode layer;
4th, fill intermediate isolating layer to the pixel electrode gap location on patterned electrodes layer;
Finally, between centering, separator carries out surface treatment and exposes the second metal level.
10. a manufacture method for reflection anode according to claim 1, is characterized in that:
First, substrate is prepared first layer metal layer;
Secondly, graphical treatment is carried out to first layer metal layer and form ground floor dot structure;
3rd, between ground floor dot structure gap, packing material forms intermediate isolating layer; Intermediate isolating layer is SiO2 or SiNx;
4th, grinding and polishing surface treatment is carried out to formed intermediate isolating layer, exposes the first metal layer;
5th, depositing second metal layer on the first metal layer;
6th, use photolithography patterning method, the second metal level is formed with the ground floor dot structure relative position on the first metal layer second layer dot structure and image conversion process is carried out to the second metal level forms second layer dot structure.
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Cited By (9)
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| CN107275455A (en) * | 2017-07-25 | 2017-10-20 | 南京迈智芯微光电科技有限公司 | A kind of electrode preparation method of the si-based light-emitting device based on stripping technology |
| CN107331786A (en) * | 2017-06-23 | 2017-11-07 | 安徽熙泰智能科技有限公司 | The manufacture method of OLED micro-display devices anode construction and the anode construction |
| CN107452770A (en) * | 2017-05-22 | 2017-12-08 | 茆胜 | The anode electrode structure and preparation method of organic TOP EMISSION DISPLAY DEVICESThe, display |
| CN109888120A (en) * | 2018-12-29 | 2019-06-14 | 昆山维信诺科技有限公司 | OLED display and its manufacturing method |
| CN110246982A (en) * | 2019-06-17 | 2019-09-17 | 南京国兆光电科技有限公司 | The reflection anode and production method of active matrix type organic luminous display device |
| WO2021114573A1 (en) * | 2019-12-13 | 2021-06-17 | 南京国兆光电科技有限公司 | Structure of reflective anode in silicon-based active matrix organic light-emitting display |
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| CN113793908A (en) * | 2021-09-08 | 2021-12-14 | 南京国兆光电科技有限公司 | Silicon-based active matrix organic light-emitting display and manufacturing method thereof |
| CN113793906A (en) * | 2021-08-30 | 2021-12-14 | 南京国兆光电科技有限公司 | Silicon-based active matrix OLED display and manufacturing method thereof |
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| CN113793908A (en) * | 2021-09-08 | 2021-12-14 | 南京国兆光电科技有限公司 | Silicon-based active matrix organic light-emitting display and manufacturing method thereof |
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Application publication date: 20150923 |