CN106653579A - OLED chroma adjustment method - Google Patents
OLED chroma adjustment method Download PDFInfo
- Publication number
- CN106653579A CN106653579A CN201710008840.6A CN201710008840A CN106653579A CN 106653579 A CN106653579 A CN 106653579A CN 201710008840 A CN201710008840 A CN 201710008840A CN 106653579 A CN106653579 A CN 106653579A
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- CN
- China
- Prior art keywords
- oled
- photoresist
- layer
- colourities
- film layer
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
Abstract
The invention provides an OLED chroma adjustment method which comprises the following steps of S101, after packaging an OLED by means of a packaging layer, applying first photoresist on the surface of the packaging layer, wherein a dyeing agent is doped in the first photoresist; S102, performing exposure processing on the first photoresist by means of a photo mask board; and S103, processing the first photoresist after exposure processing by means of developing agent, thereby obtaining second photoresist on which holes are distributed in an arrangement. Refractive index of the photoresist is adjusted through adding the dyeing agent into the photoresist, thereby improving an optical coupling function of an OLED element and adjusting chroma of the OLED.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of OLED colourities method of adjustment.
Background technology
Organic Light Emitting Diode (Organic light-emitting Diode, abbreviation OLED), it is autonomous by organic layer
Luminescence display, due to not needing backlight, therefore with faster response time, bigger visible angle, higher contrast
And lighter component quality, it is most potential flat panel display generally acknowledged at present the features such as low-power consumption.
At present, Organic Light Emitting Diode is made up of the sandwich construction with difference in functionality.Per layer material build-in attribute and
It is very important with the compatibility of other layer materials.In sandwich construction, hole injection layer (HIL) is generally included, hole passes
Defeated layer (HTL), luminescent layer (EML), electron transfer layer (ETL) and electron injecting layer (EIL) etc..Due to the refractive index of each layer
Difference, can occur the phenomenon being totally reflected, the most of light for causing luminescent layer organic matter to produce when light is transmitted between the layers
Loss.Only about 20% light can effectively be launched, and most light is all wasted in reflection between the layers, and this is to lead
The main cause for causing Organic Light Emitting Diode external quantum efficiency relatively low.Increase microlens array (microlens in light path
Array) optical coupling to improve OLED element is acted on, and is a kind of method for improving OLED element external quantum efficiency.
OLED Display Techniques have at present two kinds of implementation methods.The first adds colored filter (color with white light OLED
Filter), second is RGB OLED, i.e., be made up of the OLED subpixel that can respectively launch redness, green and blue light.
In RGB OLED, the colourity of three kinds of colors just into one of main standard of assessment OLED performances, in being also current OLED techniques
A difficult point.
The content of the invention
The present invention provides a kind of OLED colourities method of adjustment, to solve prior art in OLED colourity it is not up to standard, from
And affect the technical problem of OLED performances.
The present invention provides a kind of OLED colourities method of adjustment, including：
Step 101, after being packaged using encapsulated layer to OLED, encapsulation layer surface cover the first photoresist, first
Adulterate coloring agent in photoresist；
Step 102, process is exposed using photomask blank to the first photoresist；
Step 103, is processed the first photoresist through exposure-processed using developer solution, to obtain the second photoetching
Glue, has the hole in array distribution on the second photoresist.
Further, exposure-processed adopts ultraviolet exposure.
Further, photoresist is negative photoresist.
Further, photoresist is positive photoresist.
Further, also include before step 101, plate separation layer in the negative electrode of OLED, separation layer includes organic film
Layer and inorganic thin film layer；Encapsulated layer is covered in insulation surface, to complete the encapsulation of OLED.
Further, encapsulated layer is silicon nitride layer.
Further, organic thin film layer is film layer.
Further, inorganic thin film layer is inorganic oxide film layer.
Further, the negative electrode plating separation layer in OLED is specifically included, by technique for atomic layer deposition and/or chemical gaseous phase
Deposition technique plates separation layer in the negative electrode of OLED.
The present invention provides a kind of OLED colourities method of adjustment, and by adding coloring agent in the first photoresist second is adjusted
The refractive index of photoresist, so as to the optical coupling for improving OLED element is acted on, to adjust the colourity of OLED, simultaneously as photoetching
The characteristics of technology has high-res, the second photoresist obtained after typesetting is used as microlens array, such micro-
Lens array is more flexible in design.
Description of the drawings
Hereinafter the present invention will be described in more detail based on embodiment and refer to the attached drawing.Wherein：
Fig. 1 is a schematic flow sheet of OLED colourities method of adjustment provided in an embodiment of the present invention；
Fig. 2 is that ultraviolet exposure provided in an embodiment of the present invention processes schematic diagram；
Fig. 3 is another schematic flow sheet of OLED colourities method of adjustment provided in an embodiment of the present invention.
In the accompanying drawings, identical part uses identical reference.Accompanying drawing is not drawn according to actual ratio.
Specific embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
As shown in figure 1, the present invention provides a kind of OLED colourities method of adjustment, including：
Step 101, after being packaged using encapsulated layer to OLED, encapsulation layer surface cover the first photoresist, first
Adulterate coloring agent in photoresist.Coloring agent can be RGB coloring agents.Adulterate in the photoresist coloring agent, can be used as colored filter
Use.The refractive index of photoresist is adjusted by coloring agent, so as to adjust the colourity of OLED.First photoresist can be negative photo
Glue, alternatively positive photoresist.
Step 102, process ultraviolet is exposed using photomask blank to the first photoresist.Preferably, exposure-processed is adopted
Use ultraviolet exposure.There is specific pierced pattern in photomask blank, photomask blank is positioned over into the first photoresist surface, and it is right
It carries out ultraviolet exposure, makes corresponding first photoresist of photomask blank openwork part obtain ultraviolet exposure.
Step 103, is processed the first photoresist through exposure-processed using developer solution, to obtain the second photoetching
Glue, has the hole in array distribution on the second photoresist.When the first photoresist is positive photoresist, expose on the first photoresist
The part of light process, i.e. the part being irradiated to by ultraviolet on the first photoresist will be dissolved in developer solution, using developer solution to the
When one photoresist is processed, the part being irradiated to by ultraviolet can be cleaned out.When the first photoresist is negative photoresist,
Part (the photomask blank not being irradiated to by ultraviolet on the part of process, i.e. the first photoresist is not exposed on first photoresist
The part that non-openwork part is covered) developer solution will be dissolved in, it is not ultraviolet when being processed the first photoresist using developer solution
The part that line is irradiated to can be cleaned out.Either using positive photoresist or negative photoresist, the second photoresist is required for
With the hole in array distribution, the second photoresist that should have the hole in array distribution can be used as microlens array.
Because the bore hole size in the second photoresist is with the hollow out size of photomask blank relevant, therefore design photomask blank can be passed through
Hollow out size controlling the bore hole size of the second photoresist, so the bore hole size of the second photoresist can accomplish very little.When
When two photoresists are used as microlens array, can further increase the flexibility of design.
Fig. 2 is that ultraviolet exposure processes schematic diagram.4 represent ultraviolet exposure in Fig. 2, and 1 is photomask blank, and 2 is the first light
Photoresist, 3 is encapsulated layer.For negative photoresist, the part of ultraviolet exposure will be insoluble in developer solution, therefore ultraviolet exposes
Can remain in follow-up development step in the part of light, without being partially soluble in developer solution, therefore the part for exposure
Can be washed off in development step.For positive photoresist, the part of ultraviolet exposure will be dissolved in developer solution, the part meeting
It is washed off in development step, the part without exposure will be insoluble in developer solution, and the part can remain in development step.
The characteristics of there is high-resolution due to the method for photoetching, therefore, the second photoresist is used as microlens array,
The optical coupling effect of OLED element can be improved, to improve the external quantum efficiency of OLED element.Due to will after typesetting obtain second
Photoresist is used as microlens array, and this microlens array can be made to accomplish less size, increased the flexible of design
Property.The OLED colourity methods of adjustment that the present embodiment is provided, will be doped with the first photoresist of coloring agent as colored filter film
To use, the colourity of light can be adjusted out, so as to the optical coupling for improving OLED element is acted on, to adjust the colourity of OLED, meanwhile,
Because photoetching can reach very high resolution ratio, the photoresist after typesetting is used as microlens array, in design more
Flexibly.
As shown in figure 3, in a specific embodiment of the present invention, step 100a and step are also included before step 101
100b。
Wherein, step 100a, in the negative electrode of OLED separation layer is plated, and separation layer includes organic thin film layer and inorganic thin film layer.
Organic thin film layer is film layer.Inorganic thin film layer is inorganic oxide film layer.
In the another specific embodiment of the present invention, specifically include in the negative electrode plating separation layer of OLED, by atomic layer deposition
Product technology and/or chemical vapour deposition technique plate separation layer in the negative electrode of OLED.
In the encapsulation step of OLED, by being deposited with one layer of separation layer on negative electrode, ald skill is then passed through again
Organic thin film layer and inorganic thin film layer interaction are plated in OLED cathode zones by art and/or chemical vapour deposition technique, to avoid water
Gas and oxygen enter OLED, cause OLED element to damage.
Step 100b, covers encapsulated layer, to complete the encapsulation of OLED in insulation surface.Preferably, encapsulated layer is nitridation
Silicon layer.
Although by reference to preferred embodiment, invention has been described, in the situation without departing from the scope of the present invention
Under, various improvement can be carried out to it and part therein can be replaced with equivalent.Especially, as long as there is no structure punching
Prominent, the every technical characteristic being previously mentioned in each embodiment can combine in any way.The invention is not limited in text
Disclosed in specific embodiment, but including all technical schemes for falling within the scope of the appended claims.
Claims (9)
1. a kind of OLED colourities method of adjustment, it is characterised in that include：
Step 101, after being packaged using encapsulated layer to OLED, in the encapsulation layer surface the first photoresist is covered, described
Adulterate coloring agent in first photoresist；
Step 102, process is exposed using photomask blank to first photoresist；
Step 103, is processed first photoresist through exposure-processed, to obtain the second photoetching using developer solution
Glue, has the hole in array distribution on second photoresist.
2. OLED colourities method of adjustment according to claim 1, it is characterised in that the exposure-processed is exposed using ultraviolet
Light.
3. OLED colourities method of adjustment according to claim 1, it is characterised in that the photoresist is negative photoresist.
4. OLED colourities method of adjustment according to claim 1, it is characterised in that the photoresist is positive photoresist.
5. according to the arbitrary described OLED colourity methods of adjustment of claim 1-4, it is characterised in that also wrap before step 101
Include, in the negative electrode of OLED separation layer is plated, the separation layer includes organic thin film layer and inorganic thin film layer；In the insulation surface
The encapsulated layer is covered, to complete the encapsulation of OLED.
6. OLED colourities method of adjustment according to claim 5, it is characterised in that the encapsulated layer is silicon nitride layer.
7. OLED colourities method of adjustment according to claim 5, it is characterised in that the organic thin film layer is that polyethylene is thin
Film layer.
8. OLED colourities method of adjustment according to claim 5, it is characterised in that the inorganic thin film layer is inorganic oxide
Thing film layer.
9. OLED colourities method of adjustment according to claim 5, it is characterised in that the negative electrode in OLED plates separation layer
Specifically include, separation layer is plated in the negative electrode of OLED by technique for atomic layer deposition and/or chemical vapour deposition technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710008840.6A CN106653579A (en) | 2017-01-06 | 2017-01-06 | OLED chroma adjustment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710008840.6A CN106653579A (en) | 2017-01-06 | 2017-01-06 | OLED chroma adjustment method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106653579A true CN106653579A (en) | 2017-05-10 |
Family
ID=58844229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710008840.6A Pending CN106653579A (en) | 2017-01-06 | 2017-01-06 | OLED chroma adjustment method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018223691A1 (en) * | 2017-06-05 | 2018-12-13 | 京东方科技集团股份有限公司 | Method for manufacturing array substrate, array substrate and display apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276104A (en) * | 2007-03-29 | 2008-10-01 | 奇美电子股份有限公司 | Semi-penetration and semi-reflection type LCD and colorful pixel |
| CN102024749A (en) * | 2009-09-17 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Forming method of through hole |
| CN102468450A (en) * | 2010-11-17 | 2012-05-23 | 上海广电电子股份有限公司 | Manufacturing method of organic light emitting display device |
| US20150144918A1 (en) * | 2013-11-22 | 2015-05-28 | Samsung Electronics Co., Ltd. | Method of manufacturing optical film for reducing color shift, organic light-emitting display apparatus using optical film for reducing color shift, and method of manufacturing the same |
| CN104882562A (en) * | 2014-02-28 | 2015-09-02 | 海洋王照明科技股份有限公司 | OLED and preparation method thereof |
-
2017
- 2017-01-06 CN CN201710008840.6A patent/CN106653579A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276104A (en) * | 2007-03-29 | 2008-10-01 | 奇美电子股份有限公司 | Semi-penetration and semi-reflection type LCD and colorful pixel |
| CN102024749A (en) * | 2009-09-17 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Forming method of through hole |
| CN102468450A (en) * | 2010-11-17 | 2012-05-23 | 上海广电电子股份有限公司 | Manufacturing method of organic light emitting display device |
| US20150144918A1 (en) * | 2013-11-22 | 2015-05-28 | Samsung Electronics Co., Ltd. | Method of manufacturing optical film for reducing color shift, organic light-emitting display apparatus using optical film for reducing color shift, and method of manufacturing the same |
| CN104882562A (en) * | 2014-02-28 | 2015-09-02 | 海洋王照明科技股份有限公司 | OLED and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018223691A1 (en) * | 2017-06-05 | 2018-12-13 | 京东方科技集团股份有限公司 | Method for manufacturing array substrate, array substrate and display apparatus |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170510 |
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| RJ01 | Rejection of invention patent application after publication |