CN102460745B - 光电子半导体器件 - Google Patents
光电子半导体器件 Download PDFInfo
- Publication number
- CN102460745B CN102460745B CN201080027028.4A CN201080027028A CN102460745B CN 102460745 B CN102460745 B CN 102460745B CN 201080027028 A CN201080027028 A CN 201080027028A CN 102460745 B CN102460745 B CN 102460745B
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- optoelectronic semiconductor
- filter device
- radiation
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 132
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 52
- 230000005855 radiation Effects 0.000 claims abstract description 83
- 230000003287 optical effect Effects 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims description 26
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 239000011888 foil Substances 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- 229920003023 plastic Polymers 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 230000003595 spectral effect Effects 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 230000008832 photodamage Effects 0.000 claims description 3
- 238000004382 potting Methods 0.000 description 15
- 239000004408 titanium dioxide Substances 0.000 description 7
- 238000002845 discoloration Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012799 electrically-conductive coating Substances 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- -1 titanium dioxide Chemical compound 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
Landscapes
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009025266.5A DE102009025266B4 (de) | 2009-06-17 | 2009-06-17 | Optoelektronisches Halbleiterbauteil |
| DE102009025266.5 | 2009-06-17 | ||
| PCT/EP2010/056602 WO2010145893A2 (de) | 2009-06-17 | 2010-05-12 | Optoelektronisches halbleiterbauteil |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102460745A CN102460745A (zh) | 2012-05-16 |
| CN102460745B true CN102460745B (zh) | 2015-04-22 |
Family
ID=42555956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080027028.4A Expired - Fee Related CN102460745B (zh) | 2009-06-17 | 2010-05-12 | 光电子半导体器件 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8569782B2 (enExample) |
| EP (1) | EP2443674A2 (enExample) |
| JP (1) | JP2012530365A (enExample) |
| KR (1) | KR101673457B1 (enExample) |
| CN (1) | CN102460745B (enExample) |
| DE (1) | DE102009025266B4 (enExample) |
| WO (1) | WO2010145893A2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110291113A1 (en) * | 2010-05-27 | 2011-12-01 | Philips Lumileds Lighting Company, Llc | Filter for a light emitting device |
| DE102011105010A1 (de) * | 2011-06-20 | 2012-12-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
| US8742655B2 (en) | 2011-07-22 | 2014-06-03 | Guardian Industries Corp. | LED lighting systems with phosphor subassemblies, and/or methods of making the same |
| DE102011085645B4 (de) * | 2011-11-03 | 2014-06-26 | Osram Gmbh | Leuchtdiodenmodul und Verfahren zum Betreiben eines Leuchtdiodenmoduls |
| FR2986056B1 (fr) * | 2012-01-23 | 2016-12-30 | Stephane Ruaud | Filtre de protection et de confort visuel permettant la diffusion homogene de lumiere sans emission d'uv, annulant les effets nocifs de la lumiere bleue emise par les appareils d'eclairage artificiel |
| WO2013172025A1 (ja) * | 2012-05-16 | 2013-11-21 | パナソニック株式会社 | 波長変換素子およびその製造方法ならびに波長変換素子を用いたｌｅｄ素子および半導体レーザ発光装置 |
| JP5672622B2 (ja) * | 2012-05-22 | 2015-02-18 | パナソニックＩｐマネジメント株式会社 | 波長変換素子およびその製造方法ならびに波長変換素子を用いたｌｅｄ素子および半導体レーザ発光装置 |
| DE102013102482A1 (de) * | 2013-03-12 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102013105798A1 (de) | 2013-06-05 | 2014-12-11 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| US9293670B2 (en) * | 2014-04-07 | 2016-03-22 | Crystal Is, Inc. | Ultraviolet light-emitting devices and methods |
| DE102014107972B9 (de) | 2014-04-17 | 2022-07-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtvorrichtung mit einem ersten Leuchtstoff und Filterpartikeln |
| DE102014106073A1 (de) * | 2014-04-30 | 2015-11-05 | Osram Opto Semiconductors Gmbh | Vorrichtung mit einer lichtemittierenden Diode |
| DE102014108188A1 (de) | 2014-06-11 | 2015-12-17 | Osram Gmbh | Optoelektronisches Halbleiterbauteil |
| CN108318950B (zh) * | 2018-03-01 | 2020-09-04 | 深圳市华星光电技术有限公司 | 背光模组及其扩散片 |
| DE102018105085B4 (de) * | 2018-03-06 | 2024-05-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauteil und Leuchtmittel |
| DE102020123797A1 (de) * | 2020-09-11 | 2022-03-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische sensorzelle und optoelektronischer halbleitersensor |
| DE102021123702A1 (de) * | 2021-09-14 | 2023-03-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische halbleiterschichtenfolge und optoelektronisches halbleiterbauelement |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201146194Y (zh) * | 2007-10-24 | 2008-11-05 | 亿光电子工业股份有限公司 | 可过滤紫外线波段的发光二极管 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03139178A (ja) * | 1989-10-23 | 1991-06-13 | Canon Inc | 振動波モータの駆動回路 |
| JP3559446B2 (ja) * | 1998-03-23 | 2004-09-02 | 株式会社東芝 | 半導体発光素子および半導体発光装置 |
| JP4944301B2 (ja) * | 2000-02-01 | 2012-05-30 | パナソニック株式会社 | 光電子装置およびその製造方法 |
| DE10112542B9 (de) | 2001-03-15 | 2013-01-03 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optisches Bauelement |
| US20040007169A1 (en) | 2002-01-28 | 2004-01-15 | Mitsubishi Chemical Corporation | Semiconductor nanoparticles and thin film containing the same |
| JP2003243724A (ja) * | 2002-02-14 | 2003-08-29 | Matsushita Electric Works Ltd | 発光装置 |
| EP1413619A1 (en) * | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Luminescent material, especially for LED application |
| US7091653B2 (en) * | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
| DE10361661A1 (de) | 2003-07-14 | 2005-03-17 | Osram Opto Semiconductors Gmbh | Licht emittierendes Bauelement mit einem Lumineszenz-Konversionselement |
| JP5373244B2 (ja) * | 2005-02-24 | 2013-12-18 | 株式会社朝日ラバー | 発光ダイオード用レンズ部品及び発光ダイオード光源装置 |
| JP2007042668A (ja) * | 2005-07-29 | 2007-02-15 | Toyoda Gosei Co Ltd | Ｌｅｄ発光装置 |
| KR20080063231A (ko) * | 2005-09-29 | 2008-07-03 | 이데미쓰 고산 가부시키가이샤 | 반사재 및 발광 다이오드용 반사체 |
| JP5066333B2 (ja) * | 2005-11-02 | 2012-11-07 | シチズン電子株式会社 | Ｌｅｄ発光装置。 |
| DE102005063106A1 (de) | 2005-12-30 | 2007-07-05 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Optoelektronischer Halbleiterchip und optoelektronisches Bauelement mit solch einem Halbleiterchip |
| JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
| DE102006051746A1 (de) | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht |
| DE102007010719A1 (de) * | 2007-03-06 | 2008-09-11 | Merck Patent Gmbh | Leuchtstoffe bestehend aus dotierten Granaten für pcLEDs |
-
2009
- 2009-06-17 DE DE102009025266.5A patent/DE102009025266B4/de not_active Expired - Fee Related
-
2010
- 2010-05-12 WO PCT/EP2010/056602 patent/WO2010145893A2/de not_active Ceased
- 2010-05-12 CN CN201080027028.4A patent/CN102460745B/zh not_active Expired - Fee Related
- 2010-05-12 KR KR1020127001375A patent/KR101673457B1/ko not_active Expired - Fee Related
- 2010-05-12 EP EP10720408A patent/EP2443674A2/de not_active Withdrawn
- 2010-05-12 US US13/318,624 patent/US8569782B2/en not_active Expired - Fee Related
- 2010-05-12 JP JP2012515407A patent/JP2012530365A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201146194Y (zh) * | 2007-10-24 | 2008-11-05 | 亿光电子工业股份有限公司 | 可过滤紫外线波段的发光二极管 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102460745A (zh) | 2012-05-16 |
| US20120098015A1 (en) | 2012-04-26 |
| DE102009025266B4 (de) | 2015-08-20 |
| US8569782B2 (en) | 2013-10-29 |
| DE102009025266A1 (de) | 2010-12-30 |
| JP2012530365A (ja) | 2012-11-29 |
| EP2443674A2 (de) | 2012-04-25 |
| KR20120036982A (ko) | 2012-04-18 |
| KR101673457B1 (ko) | 2016-11-07 |
| WO2010145893A3 (de) | 2011-02-24 |
| WO2010145893A2 (de) | 2010-12-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150422 Termination date: 20190512 |