CN102456679A - 具有集成电容器的高效功率转换器 - Google Patents

具有集成电容器的高效功率转换器 Download PDF

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Publication number
CN102456679A
CN102456679A CN2011103377383A CN201110337738A CN102456679A CN 102456679 A CN102456679 A CN 102456679A CN 2011103377383 A CN2011103377383 A CN 2011103377383A CN 201110337738 A CN201110337738 A CN 201110337738A CN 102456679 A CN102456679 A CN 102456679A
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China
Prior art keywords
power
wafer
power converter
converter arrangement
capacitor chip
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CN2011103377383A
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English (en)
Inventor
F·希伯特
S·佩崔赛克
N·V·凯尔卡
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Intersil Corp
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Intersil Inc
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Publication of CN102456679A publication Critical patent/CN102456679A/zh
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Abstract

提供了一种功率转换器装置，其包括基板、安装在所述基板上的功率晶片以及以叠置构造安装在功率晶片上方的电容器晶片。电容器晶片与功率晶片电耦合。封装材料用于封装功率晶片和电容器晶片。集成电路晶片也能够安装到基板上并且与功率晶片电耦合以接收来自功率晶片的功率信号，封装材料也封装集成电路晶片。

Description

具有集成电容器的高效功率转换器
本申请要求于2010年12月9日提交的美国临时申请No.61/421,280以及于2010年10月22日提交的美国临时申请No.61/405,931的优先权的利益，上述申请的内容通过引用并入。
技术领域
本申请涉及具有集成电容器的高效功率转换器。
背景技术
高功率和高频率开关电路中的寄生电感可导致效率降低、过大的瞬时振荡以及过冲，使得电路中的功率器件的应力过大。这可能导致功率器件损坏以及故障。
发明概述
在一个实施方案中，功率转换器装置包括基板、安装在基板上的功率晶片以及以叠置构造安装在功率晶片上方的电容器晶片。电容器晶片与功率晶片电耦合。封装材料用于封装功率晶片和电容器晶片。
附图说明
应当理解的是，附图仅描述示例性实施方案并且因此不被视为限制范围，将通过使用附图特别且详细地描述示例性实施方案，在附图中：
图1A和1B为根据一个实施方案的功率转换器的截面的平面图和侧视图；
图2为可在功率转换器中实施的根据一个实施方案的功率晶片的平面图；
图3为可在功率转换器中实施的根据一个实施方案的电容器的侧视图；
图4A和4B为根据另一实施方案的功率转换器的截面的平面图和侧视图；
图5A和5B为根据另一实施方案的功率转换器的截面的平面图和侧视图；
图6A和6B为根据另一实施方案的功率转换器的截面的平面图和侧视图；
图7A和7B为根据另一实施方案的功率转换器的截面的平面图和侧视图；
图8A和8B为根据另一实施方案的功率转换器的截面的平面图和侧视图；
图9为包括具有一个或多个集成电容器的功率转换器的电子系统的框图；以及
图10A-10C为示出评估集成电容器对电路性能的影响的计算机模拟的结果的曲线图。
依据惯用手段，描述的各个特征不是按比例绘制，而是绘制以用于强调与示例性实施方案相关的特定特征。
发明详述
在下面的详细描述中，参照附图，附图构成了详细描述的部分，其中通过示例具体示例性实施方案来展示附图。应当理解的是，可以使用其它实施方案，并且进行机械变型和电气变型。因此，下面的详细描述不旨在限制。
本文公开了具有集成电容器的高效功率转换器。本功率转换器使用具有薄并且与标准封装轮廓相容的集成电路相容平面结构的芯片电容器。芯片电容器叠置在单个功率晶片的上方。功率晶片包括高侧功率器件和低侧功率器件，这些功率器件整体地集成在单个晶片中，使得相位(开关输出)节点位于晶片的底部。高侧器件的顶部为电压输入(Vin)，而低侧器件的顶部接地。
在封装之前，芯片电容器以叠置构造安装在功率晶片的顶部上方。在一些实施方案中，电容器可通过倒装式焊接安装到功率晶片上，或者通过倒装式焊接安装到与功率晶片耦合的金属板上。在其它实施方案中，电容器通过丝焊安装到功率晶片上。功率转换器的部件被封装在成型封装材料中，使得电容器不延伸到成型封装件的外部。
电容器可以选定以使功率转换器的功率损耗最小化的电容值来实施。在本方法中，临界节点和电容器之间的距离缩短，使得寄生电感减小至电容器电极与电压输入(Vin)和接地节点之间的可接受水平。本方法尤其适用于直流(DC)到DC同步功率转换器。
可具有一个或多个集成电容器的本功率转换器可任选地与集成电路(IC)组合在封装件中以制成“独一无二”的功率转换器或调节器产品。IC可以为完全特征化的开关调制器和转换器，其产生脉宽调制(PWM)信号，驱动功率晶片中的金属氧化物半导体场效应晶体管(MOSFET)的栅极，具有过电流和过电压保护等。IC晶片还可以为栅极驱动器，其汲取单PWM信号并且驱动功率晶片中的MOSFET的栅极、开关调节器电路等。
在如下描述的实施方案中，具有集成电容器的功率转换器包括功率晶片以及任选的IC晶片。因此，下面参照附图描述的功率转换器的各个实施方案可被实施为根据需要具有IC晶片或不具有IC晶片。
图1A和1B图示了根据一个实施方案的功率转换器100。功率转换器100包括功率晶片102和安装到基板的任选的IC晶片104，基板可以包括金属引线框架106的内部。可以借助于一个或多个导电晶片附接焊盘108a来安装功率晶片102和IC晶片104，所述导电晶片附接焊盘可由易熔焊锡焊盘、导电性粘合材料等形成。
一对金属板110借助于导电晶片附接焊盘108b与功率晶片102和引线框架106的外部耦合。金属板110分别包括与功率晶片102耦合的凸起部111，并且在功率晶片102和引线框架106之间提供一个或多个导电路径。金属板110可以由铜、铜合金、诸如Cu/Mo/Cu的多层结构等制成。
电容器晶片112通过使用导电晶片附接焊盘108c进行倒装式焊接而被安装在金属板110上。电容器晶片112附接至功率晶片102上方金属板110的各个凸起部111。
多个焊盘114位于功率晶片102的上表面116上。多个焊盘118位于IC晶片104的上表面120上。焊盘114通过焊丝122与各个焊盘118电连接，焊丝将来自功率晶片102的功率信号提供给IC晶片104。其它焊盘118通过焊丝124与引线框架106的各个外部电连接以便为IC晶片104提供外部连接。
诸如聚合物成型化合物的封装材料126封装功率转换器100的各个部件，包括功率晶片102、IC晶片104和电容器晶片112，从而密封部件以与环境污染隔离。示例性封装材料包括由各种树脂形成的成型化合物，各种树脂包括芳族或多芳族树脂、酚醛树脂等，所述成型化合物可以包括诸如硅石的填充材料或其它材料。例如，可通过将作为填充材料的铁氧体粉添加到树脂来获得改良电磁干扰(EMI)屏蔽。
在功率晶片的一个实施方案中，在DC-DC同步功率转换器中需要的高侧装置和低侧装置被集成在相同晶片上。功率晶片在晶片的底部配置有开关节点(相位节点或输出)。
图2描绘了可在本功率转换器中实施的根据示例性实施方案的功率晶片202。功率晶片202包括安装在基板203上的高侧(HS)漏极焊盘204(Vin)以及邻近漏极焊盘204安装的高侧栅极焊盘206。低侧(LS)源极焊盘208(接地)邻近漏极焊盘204安装在基板203上，并且低侧栅极焊盘210邻近源极焊盘208安装。高侧漏极焊盘204和低侧源极焊盘208可基于所使用的电容器晶片连接技术而定形。
在一个实施方案中，电容器晶片可被实施为诸如带沟槽电容器的加纹理电容器。例如，沟槽-栅极电容器可实施在叠置电容器的基板中来增大面积。通过使用带沟槽的电容器，每单位面积的电容可显著增加，而不会影响额定电压。在另一实施方案中，电容器晶片具有大致平面型结构。例如，氮化物层可以沉积在薄的氧化物层上以形成可靠的平面型电容器结构。
图3展示了能够在电容器晶片中实施的根据一个实施方案的电容器300。电容器300包括第一金属电极302以及具有延伸部306和308的第二金属电极304。电极302的至少部分位于电极延伸部306和308之间。第一介电层310位于电极302和延伸部306之间，并且第二介电层312位于电极302和延伸部308之间。
电容器晶片的层可通过各种常规沉积技术来形成，诸如原子层沉积(ALD)、低压化学气相沉积(CVD)、金属有机CVD、等离子体气相沉积(PVD)溅射等。
电容器晶片的介电层可以由各种介电材料形成，介电材料可以具有超过氧化物的介电常数阱。例如，可以使用诸如钛酸锶钡(BaSrTiO3)、钛酸锆铅(Pb(ZR1-xTi)O3)、钛酸锶(SrTiO3)或氧化钽(Ta2O5)的高介电常数材料。这些材料提供比大约100大的介电常数。其它适当的介电材料包括硅酸铪、硅酸锆、二氧化锆、氧化铝等。
与功率晶片和电容器相关的前述细节适应于如下描述的功率转换器的另外的实施方案。
图4A和4B展示了根据另一实施方案的功率转换器400。功率转换器400包括功率晶片402和任选的IC晶片404，功率晶片402和IC晶片404借助于导电晶片附接焊盘408a安装在金属引线框架406的内部上。一对金属板410借助于导电晶片附接焊盘408b与功率晶片402和引线框架406的外部耦合。金属板410分别包括与功率晶片402耦合的凸起部411，并且提供在功率晶片402和引线框架406之间的一个或多个导电路径。
电容器晶片412通过使用一个或多个焊锡球413进行倒装式焊接而被安装在金属板410上。电容器晶片412附接至功率晶片102上方金属板110的各个凸起部411上。
多个焊盘414位于功率晶片402的上表面416上。多个焊盘418位于IC晶片404的上表面420上。焊盘414通过焊丝422与各个焊盘418电连接，焊丝422将来自功率晶片402的功率信号提供给IC晶片404。其它焊盘418通过焊丝424与引线框架406的各个外部电连接以便为IC晶片404提供外部连接。
诸如聚合物成型化合物的封装材料426封装功率转换器400的各个部件，包括功率晶片402、IC晶片404和电容器晶片412，从而密封部件以与环境污染隔离。
图5A和5B展示了根据另一实施方案的功率转换器500。功率转换器500包括功率晶片502和任选的IC晶片504，功率晶片502和IC晶片504借助于导电晶片附接焊盘508安装到金属引线框架506的内部。多个焊丝510耦合在功率晶片502的上表面503和引线框架506的外部之间。焊丝510提供功率晶片502和引线框架506之间的导电路径。电容器晶片512通过使用一个或多个焊锡球513进行倒装式焊接而被安装在功率晶片502的上表面503上。
多个焊盘514安装在功率晶片502的上表面503上。多个焊盘518位于IC印模504的上表面520上。焊盘514通过焊丝522与各个焊盘518电连接，焊丝522将来自功率晶片502的功率信号提供给IC晶片504。其它焊盘518通过焊丝524与引线框架506的各个外部电连接以便为IC晶片504提供外部连接。封装材料526封装功率转换器500的各个部件，包括功率晶片502、IC晶片504和电容器晶片512。
图6A和6B展示了根据另一实施方案的功率转换器600。功率转换器600包括功率晶片602和任选的IC晶片604，功率晶片602和IC晶片604借助于导电晶片附接焊盘608安装到金属引线框架606的内部。多个焊丝610被耦合在功率晶片602的上表面603和引线框架606的外部之间。焊丝610提供功率晶片602和引线框架606之间的导电路径。电容器晶片612借助于可为环氧树脂的绝缘晶片附接焊盘611安装在功率晶片602的上表面603上。附接至一对焊盘615的多个焊丝613将电容器晶片612与功率晶片602电连接。
多个焊盘614位于功率晶片602的上表面603上。多个焊盘618位于IC晶片604的上表面620上。通过焊丝622将焊盘614与各个焊盘618电连接，焊丝622将来自功率晶片602的功率信号提供给IC晶片604。通过焊丝624将其它焊盘618与引线框架606的各个外部电连接以便为IC晶片604提供外部连接。封装材料626封装功率转换器600的各个部件，所述部件包括功率晶片602、IC晶片604和电容器晶片612。
图7A和7B展示了根据另一实施方案的功率转换器700。功率转换器700包括功率晶片702和任选的IC晶片704，功率晶片702和IC晶片704借助于导电晶片附接焊盘707安装到金属引线框架706的内部。第一金属板710借助于导电晶片附接焊盘708与功率晶片702的上表面703和引线框架706的外部耦合。第二金属板711借助于导电晶片附接焊盘712与功率晶片702和引线框架706的外部耦合。第一金属板710具有在功率晶片702的部分上方延伸的凸起部713。第二金属板711具有在功率晶片702的部分上方以及凸起部713的部分上方延伸的凸起部714。
电容器晶片716安装在功率晶片702的上方凸起部713和凸起部714之间。电容器晶片716具有上触头717和下触头718。上触头717与凸起部714耦合，并且下触头718与凸起部713耦合。
多个焊盘720位于功率晶片702的上表面703上。多个焊盘724位于IC晶片704的上表面726上。焊盘720借助于焊丝728与各个焊盘724电连接，焊丝728将来自功率晶片702的功率信号提供给IC晶片704。其它焊盘724借助于焊丝730与引线框架706的各个外部电连接以便为IC晶片704提供外部连接。
诸如聚合物成型化合物的封装材料732封装功率转换器700的各个部件，所述部件包括功率晶片702、IC晶片704和电容器晶片716，从而密封部件以与环境污染隔离。通过封装材料732将引线框架706的底部709暴露到外部环境。底部709提供与功率晶片702的底部的电连接，并且将热沉引导到外部环境。
图8A和8B展示了根据另一实施方案的功率转换器800。功率转换器800包括功率晶片802和任选的IC晶片804，功率晶片802和IC晶片804借助于导电晶片附接焊盘807安装到金属引线框架806的内部。第一金属板810借助于导电晶片附接焊盘808与功率晶片802的上表面803和引线框架806的外部耦合。
第二金属板811借助于导电晶片附接焊盘812与功率晶片802和引线框架806的外部耦合。第一金属板810具有在功率晶片802的部分上方延伸的凸起部813。第二金属板811具有在功率晶片802的部分上方以及在凸起部813的部分上方延伸的凸起部814。
电容器晶片816安装在功率晶片802的上方凸起部813和凸起部814之间。电容器晶片816具有上触头817和下触头818。上触头817与凸起部814耦合，并且下触头818与凸起部813耦合。
多个焊盘820位于功率晶片802的上表面803上。多个焊盘824位于IC晶片804的上表面826上。焊盘820借助于焊丝828与各个焊盘824电连接，焊丝828将来自功率晶片802的功率信号提供给IC晶片804。其它焊盘824借助于焊丝830与引线框架806的各个外部电连接以便为IC晶片804提供外部连接。
封装材料832封装功率转换器800的各个部件以密封部件，所述部件包括功率晶片802、IC晶片804和电容器晶片816。通过封装材料832将引线框架806的底部809暴露到外部环境。底部809提供与功率晶片802的底部的电连接，并且将热沉引导到外部环境。
如图8B所示，金属板811的凸起部814包括通过封装材料832暴露到外部环境的上段834。上段834提供到板811的直接通路，以用于将热沉引导到外部环境。
图9为包括诸如前面的实施方案中描述的具有一个或多个集成电容器的至少一个功率转换器910的电子系统900的框图。功率转换器910与至少一个处理器920和至少一个存储器单元930电耦合。例如，总线940能够提供功率转换器910、处理器920和存储器单元930之间的电连接。处理器920和存储器单元930也彼此电耦合。
实施例1
在表1和表2中设置各个电容器的计算电容。表1列出了具有不同厚度的氧化物/氮化物平面电容器结构的电容器的计算电容。表2示出了当电容器基于与氧化物/氮化物相比具有较高介电常数的介电材料时大于1微法拉的电容是可行的。表2中的BV和表1中的BVox为电介质或电介质堆的估计击穿电压。通常，击穿的最大电场约为9MeV/cm。表1中的工作电压栏仅为BVox值的1/3。
表1
Figure BSA00000602424900091
表2
Figure BSA00000602424900101
实施例2
进行使用公开的晶体管模型的计算机模拟以评估集成电路对电路性能的影响。模拟的结果示于图10A-10C的曲线图中。图10A-10C中的结果显示了功率损耗(垂直轴)对时间(水平轴)，其中较低的值表示较高的效率。曲线图中的各个绘制图表示LFET(低侧或下场效应晶体管(FET))、UFET(高侧或上FET)、CIN(输入电容器)和DRIVE(与输入功率相关)和TOTAL功率损耗。
图10A示出了不使用任何电容器的结果，其中总功率损耗为2.4μJ。图10B示出了使用100nF电容器的结果，其中总功率损耗为2.2μJ。图10C示出了使用10nF电容器的结果，其中总功率损耗为2.0μJ。图10C中的结果证实，由于更大的电容不一定为较低的功率损耗，微调电容能够提高性能。
计算机模拟表明，增加电容将总功率损耗降低了大约10％并且也减少了瞬时振荡。而且，通过为具体应用(取决于电感等)微调电容，能够获得将功率损耗降低大约20％的效果。
尽管本文中已经阐述和说明了特定的实施方案，本领域普通技术人员应当理解的是，计算以达到相同目的的任何布置可以替代所示的特定实施方案。因此，明确希望本发明仅由权利要求及其等同内容限制。
附图中主要部件的附图标记列表
100  功率转换器
102  功率晶片
104  IC晶片
106  金属引线框架
108a  导电晶片附接焊盘
108b  导电晶片附接焊盘
108c  导电晶片附接焊盘
110  金属板
111  凸起部
112  电容器晶片
114  焊盘
116  上表面
118  焊盘
120  上表面
122  焊丝
124  焊丝
126  封装材料
202  功率晶片
203  基板
204  高侧(HS)漏极焊盘
206  高侧(HS)栅极焊盘
208  低侧(LS)源极焊盘
210  低侧栅极焊盘
300  电容器
302  金属电极
304  金属电极
306  电极延伸部
308  电极延伸部
310  介电层
312  介电层
400  功率转换器
402  功率晶片
404  IC晶片
406  金属引线框架
408a  导电晶片附接焊盘
408b  导电晶片附接焊盘
410  金属板
411  凸起部
412  电容器晶片
413  焊锡球
414  焊盘
416  上表面
418  焊盘
420  上表面
422  焊丝
424  焊丝
426  封装材料
500  功率转换器
502  功率晶片
503  上表面
504  IC晶片
506  金属引线框架
508  导电晶片附接焊盘
510  焊丝
512  电容器晶片
513  焊锡球
514  焊盘
518  焊盘
520  上表面
522  焊丝
524  焊丝
526  封装材料
600  功率转换器
602  功率晶片
603  上表面
604  IC晶片
606  金属引线框架
608  导电晶片附接焊盘
610  焊丝
611  绝缘晶片附接焊盘
612  电容器晶片
613  焊丝
614  焊盘
615  焊盘
618  焊盘
620  上表面
622  焊丝
624  焊丝
626  封装材料
700  功率转换器
702  功率晶片
703  上表面
704  IC晶片
706  金属引线框架
707  导电晶片附接焊盘
708  导电晶片附接焊盘
709  底部
710  金属板
711  金属板
712  导电晶片附接焊盘
713  凸起部
714  凸起部
716  电容器晶片
717  上触头
718  下触头
720  焊盘
724  焊盘
726  上表面
728  焊丝
730  焊丝
732  封装材料
800  功率转换器
802  功率晶片
803  上表面
804  IC晶片
806  金属引线框架
807  导电晶片附接焊盘
808  导电晶片附接焊盘
809  底部
810  金属板
811  金属板
812  导电晶片附接焊盘
813  凸起部
814  凸起部
816  电容器晶片
817  上触头
818  下触头
820  焊盘
824  焊盘
826  上表面
828  焊丝
830  焊丝
832  封装材料
834  上段
900  电子系统
910  功率转换器
920  处理器
930  存储器单元
940  总线

Claims (31)

1.一种功率转换器装置，包括：
基板；
功率晶片，其安装在所述基板上；
电容器晶片，其以叠置构造安装在所述功率晶片的上方，所述电容器晶片与所述功率晶片电耦合；以及
封装材料，其封装所述功率晶片和所述电容器晶片。
2.如权利要求1所述的功率转换器装置，其中所述基板包括具有内部和外部的金属引线框架。
3.如权利要求2所述的功率转换器装置，其中所述功率晶片安装在所述金属引线框架的所述内部上。
4.如权利要求2所述的功率转换器装置，进一步包括一对金属板，所述金属板与所述功率晶片和所述引线框架的所述外部导电性耦合，使得所述金属板在所述功率晶片和所述引线框架的所述外部之间提供一个或多个导电路径。
5.如权利要求4所述的功率转换器装置，其中所述电容器晶片安装在所述功率晶片上方所述金属板上。
6.如权利要求5所述的功率转换器装置，其中所述电容器晶片通过使用一个或多个导电晶片附接焊盘或一个或多个焊锡球进行倒装式焊接而被安装在所述金属板上。
7.如权利要求2所述的功率转换器装置，进一步包括耦合在所述功率晶片的上表面和所述引线框架的所述外部之间的第一多根焊丝，所述第一多根焊丝提供所述功率晶片和所述引线框架之间的导电路径。
8.如权利要求7所述的功率转换器装置，其中所述电容器晶片通过使用一个或多个焊锡球进行倒装式焊接而被安装在所述功率晶片上。
9.如权利要求7所述的功率转换器装置，其中所述电容器晶片借助于绝缘晶片附接焊盘安装在所述功率晶片上，并且所述电容器晶片借助于第二多根焊丝与所述功率晶片电连接。
10.如权利要求2所述的功率转换器装置，进一步包括：
第一金属板，其与所述功率晶片和所述引线框架的所述外部导电性耦合，所述第一金属板具有在所述功率晶片的部分上方延伸的凸起部；以及
第二金属板，其与所述功率晶片和所述引线框架的所述外部导电性耦合，所述第二金属板具有在所述功率晶片的部分上方以及在所述第一金属板的所述凸起部的部分上方延伸的凸起部。
11.如权利要求10所述的功率转换器装置，其中所述电容器晶片安装在所述功率晶片的上方所述第一金属板和所述第二金属板的所述凸起部之间。
12.如权利要求11所述的功率转换器装置，其中所述电容器晶片包括与所述第二金属板的所述凸起部耦合的上触头和与所述第一金属板的所述凸起部耦合的下触头。
13.如权利要求10所述的功率转换器装置，其中通过所述封装材料暴露所述引线框架的底部。
14.如权利要求13所述的功率转换器装置，其中所述第二金属板的所述凸起部包括通过所述封装材料暴露的上段。
15.如权利要求1所述的功率转换器装置，其中所述功率晶片包括：
基板；
高侧漏极焊盘，其与所述基板耦合；
高侧栅极焊盘，其邻近所述高侧漏极焊盘与所述基板耦合；
低侧源极焊盘，其邻近所述高侧漏极焊盘与所述基板耦合；以及
低侧栅极焊盘，其邻近所述低侧源极焊盘与所述基板耦合。
16.如权利要求1所述的功率转换器装置，其中所述电容器晶片包括：
第一金属电极；
第二金属电极，其具有至少部分围绕所述第一金属电极的第一延伸部和第二延伸部；
第一介电层，其位于所述第一金属电极和所述第一延伸部之间；以及
第二介电层，其位于所述第一金属电极和所述第二延伸部之间。
17.如权利要求1所述的功率转换器装置，其中所述电容器晶片包括一个或多个介电层，所述介电层包含钛酸锶钡、钛酸锆铅、钛酸锶、氧化钽、硅酸铪、硅酸锆、二氧化锆或氧化铝。
18.一种功率转换器装置，包括：
基板，其包括具有内部和外部的金属引线框架；
功率晶片，其安装在所述引线框架的所述内部上；
电容器晶片，其以叠置构造安装在所述功率晶片上方，所述电容器晶片与所述功率晶片电耦合；
集成电路晶片，其安装到所述基板并且与所述引线框架的所述外部电耦合；以及
封装材料，其封装所述功率晶片和所述电容器晶片，
其中所述集成电路晶片与所述功率晶片电耦合以接收来自所述功率晶片的功率信号。
19.如权利要求18所述的功率转换器装置，进一步包括一对金属板，所述金属板与所述功率晶片和所述引线框架的所述外部导电性耦合，使得所述金属板在所述功率晶片和所述引线框架的所述外部之间提供一个或多个导电路径。
20.如权利要求19所述的功率转换器装置，其中所述电容器晶片通过使用一个或多个导电晶片附接焊盘或一个或多个焊锡球进行倒装式焊接而被安装在所述金属板上。
21.如权利要求18所述的功率转换器装置，进一步包括在所述功率晶片的上表面和所述引线框架的所述外部之间耦合的第一多根焊丝，所述第一多根焊丝提供所述功率晶片和所述引线框架之间的导电路径。
22.如权利要求21所述的功率转换器装置，其中所述电容器晶片通过使用一个或多个焊锡球进行倒装式焊接而被安装在所述功率晶片上。
23.如权利要求21所述的功率转换器装置，其中所述电容器晶片借助于绝缘晶片附接焊盘安装在所述功率晶片上，并且所述电容器晶片借助于第二多根焊丝与所述功率晶片电连接。
24.如权利要求18所述的功率转换器装置，进一步包括：
第一金属板，其与所述功率晶片和所述引线框架的所述外部导电性耦合，所述第一金属板具有在所述功率晶片的部分上方延伸的凸起部；以及
第二金属板，其与所述功率晶片和所述引线框架的所述外部导电性耦合，所述第二金属板具有在所述功率晶片的部分上方以及在所述第一金属板的所述凸起部的部分上方延伸的凸起部。
25.如权利要求24所述的功率转换器装置，其中所述电容器晶片安装在所述功率晶片上方所述第一和第二金属板的所述凸起部之间。
26.如权利要求24所述的功率转换器装置，其中通过所述封装材料暴露所述引线框架的底部。
27.如权利要求26所述的功率转换器装置，其中所述第二金属板的所述凸起部包括通过所述封装材料暴露的上段。
28.一种电子系统，包括：
至少一个处理器；
至少一个存储器单元，其与所述处理器可操作地耦合；以及
至少一个功率转换器，其与所述处理器和所述存储器单元电耦合，所述功率转换器包括：
金属引线框架，其具有内部和外部；
功率晶片，其安装在所述引线框架的所述内部上；
电容器晶片，其以叠置构造安装在所述功率晶片的上方，所述电容器晶片与所述功率晶片电耦合；以及
封装材料，其封装所述功率晶片和所述电容器晶片。
29.如权利要求28所述的电子系统，进一步包括安装到所述引线框架上的集成电路晶片，所述集成电路与所述功率晶片和所述引线框架的所述外部电耦合。
30.一种制造功率转换器装置的方法，包括：
提供基板；
将功率晶片安装在所述基板上；
以叠置构造将所述电容器晶片安装在所述功率晶片的上方；
将所述电容器晶片与所述功率晶片电耦合；以及
使用封装材料来封装所述功率晶片和所述电容器晶片。
31.如权利要求30所述的方法，进一步包括：
将集成电路晶片安装在所述基板上；以及
将所述集成电路晶片与所述功率晶片电耦合。
CN2011103377383A 2010-10-22 2011-10-21 具有集成电容器的高效功率转换器 Pending CN102456679A (zh)

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