CN102447032B

CN102447032B - Luminescent device

Info

Publication number: CN102447032B
Application number: CN201110315352.2A
Authority: CN
Inventors: 林祐湜; 金省均; 罗珉圭; 秋圣镐; 金明洙; 范熙荣
Original assignee: LG Innotek Co Ltd
Current assignee: LG Innotek Co Ltd
Priority date: 2010-10-11
Filing date: 2011-10-11
Publication date: 2016-12-14
Anticipated expiration: 2031-10-11

Abstract

The open a kind of luminescent device of the present invention, this luminescent device includes ray structure, and this ray structure includes the first semiconductor layer, the second semiconductor layer and is arranged in the active layer between the first and second semiconductor layers；It is electrically connected to the first electrode of the first semiconductor layer；And it is electrically connected to the second electrode of the second semiconductor layer.First semiconductor layer is formed as the hole in its edge part office with the part wherein arranging described first electrode.

Description

Luminescent device

Cross-Reference to Related Applications

This application claims the korean patent application No. submitted on October 11st, 2010 The priority of 10-2010-0098923, its its contents whole are herein incorporated by quoting entirety.

Technical field

The present invention relates to a kind of luminescent device.

Background technology

The appearance short etc. due to dim spot, life-span causes requirement to be replaced as frequently as fluorescent lamp.Additionally, Owing to the use of fluorescent material makes them be unsatisfactory for the needs of more environmentally-friendly illuminating device.To this end, Little by little substitute fluorescent lamp with other light source.

In the middle of luminescent device, the light emitting diode (LED) of light source receives very as an alternative Big concern.LED has the advantage of the quasiconductor of such as fast processing speeds and low power consumption, It is environmental protection, and has high energy-saving effect.Therefore, LED is important light source of future generation. Therefore, carry out substituting the actual application of the LED of existing fluorescent lamp the most energetically.

Currently, the light emitting semiconductor device of such as LED be applied to TV, monitor, notebook, Cell phone and be equipped with the various electrical equipment of display device.Especially, they are by widely It is used as to substitute the back light unit of cold cathode fluorescence lamp (CCFL).

Recently, it is desirable to luminescent device has high brightness and makes them be used as illumination Light source.In order to realize this high brightness, study, to be capable of the expansion of uniform electric current Dissipate and therefore strengthen the manufacture of luminescent device of luminous efficiency.

Accompanying drawing explanation

Embodiment will be described with reference to the drawings in detail, and the most identical reference represents identical Element, wherein:

Fig. 1 be illustrate according to as at this widely described in the sectional view of luminescent device of embodiment；

Fig. 2 to Fig. 6 is the series illustrating the method for manufacturing the luminescent device shown in Fig. 1 The sectional view processed；

Fig. 7 be according at this widely described in the luminescence included as shown in Fig. 1 of embodiment The perspective view of the light emitting device package of device；

Fig. 8 be according to as at this widely described in embodiment include luminescent device illumination fill The perspective view put；

Fig. 9 is the illuminator intercepted along the line A-A ' of the illuminator shown in Fig. 8 Sectional view；

Figure 10 is according to the liquid crystal including luminescent device in the embodiment so described widely Show the perspective view of device；

Figure 11 be according to as at this widely described in the liquid including luminescent device of another embodiment The perspective view of crystal display.

Detailed description of the invention

Now will be in detail with reference to preferred embodiment, its example shown in the drawings.

It is clearly understood that advantage and feature in conjunction with accompanying drawing according to following embodiment and realizes excellent Point and the method for feature.But, embodiment is unrestricted and can be with various different forms Realize.Embodiment is being provided solely to be more fully shown and make those skilled in the art It is apparent from scope.Only be defined by the claims this scope.Therefore, implement at some In example, it is not illustrated in detail in well-known technique, well-known device architecture and crowd Well known technology is to avoid unclear explanation.Identical accompanying drawing will be used in the description Labelling represents same or like parts.

Relative terms spatially, " in lower section ", " below ", D score, " upper Just ", " above " etc. can be used to indicate that a device or element and other device Relation between part or element, as shown in the drawing.It should be understood that spatially Relative terms includes direction illustrated in the accompanying drawings and at the device used or during operation Other direction.Such as, in the case of device shown in the accompanying drawings is reversed, it is disposed in another The device of " lower section " or " below " of one device can be disposed in another device " on Side ".Therefore, in exemplary term, " below " can include " in lower section " or " in lower section " and " up ".Device can be arranged in other directions.As a result, it is possible to Depend on being orientated the relative terms understood spatially.

The term used in the description is being provided solely to illustrate embodiment and be understood not to Limit scope and spirit of the present invention.In the description, the term of singulative includes its plural number Form, unless otherwise described.In term as used herein " includes ", the assembly mentioned, Step, operation and/or device be not excluded for one or more other assembly, step, operation and/or The existence of device or interpolation.

Unless otherwise defined, all terms the most as used herein (including technology and scientific terminology) Can be intended to that there is the meaning that those skilled in the art understands.It addition, should not singularly or Explain at the term defined in common dictionary large, unless the most specifically it is carried out Definition.

In the accompanying drawings, clear and convenient in order to describe, thickness or the size of each layer be exaggerated, Omit or schematically show.Therefore, the size of each element reflects in fact the most on the whole Border size.

It addition, be described in reference during the description of the structure of luminescent device based on the diagram in accompanying drawing Angle and direction.In the description of the structure of luminescent device, without be explicitly described with The datum mark that angles and positions relation is relevant, then will be with reference to accompanying drawing.

Hereinafter, in order to illustrate the shape of the luminescent device according to embodiment in further detail, Will be based on first direction (X) and the second direction (Y) being perpendicular to first direction (X) Luminescent device is described.

Fig. 1 be illustrate according to as at this widely described in the sectional view of luminescent device of embodiment.

With reference to Fig. 1, as embody at this and widely described in luminescent device can include substrate 110 and the ray structure 120 that is arranged on substrate 110.

Substrate 110 can be made up of the material with outstanding heat conductivity.Alternatively, substrate 110 Can be made of an electrically conducting material.Such as, substrate 110 can be by metal material or conductivity ceramics Make.

Substrate 110 can have single layer structure.Alternatively, substrate 110 can have double-deck knot Structure or there is the multiple structure of three layers or more layers.

Although the substrate 110 in the embodiment illustrated has described as has electric conductivity, but The disclosure is not limited to this.Such as, substrate 110 can be non-conductive.

When substrate 110 is made up of metal material, the material of substrate 110 can be from gold (Au), Nickel (Ni), tungsten (W), molybdenum (Mo), copper (Cu), aluminum (Al), tantalum (Ta), silver (Ag), The metal material selected in platinum (Pt), chromium (Cr) and its alloy.Can be by lamination difference The two-layer of material or more layers form substrate 110.

Substrate 110 is for easily dissipating the heat produced from luminescent device 100 and therefore real The enhancing of existing heat stability.

When substrate 110 is made up of semi-conducting material, it is possible to use such as silicon (Si), germanium (Ge), GaAs (GaAs), zinc oxide (ZnO), carborundum (SiC), SiGe (SiGe), Gallium nitride (GaN) or gallium oxide (Ga₂O₃) carrier wafer form substrate 110 Material.

Substrate 110 can have light transmitting property.Such as, silicon is used to be formed as when substrate 110 Predetermined thickness or less time, it can have light transmitting property.Certainly, substrate 110 does not limits In this condition.

Substrate 110 can be made up of the material with high-termal conductivity.Substrate 110 can have ratio The refractive index that second semiconductor layer 126 is low, in order to realize the enhancing of light extraction efficiency.And, In order to further enhance light extraction efficiency, substrate 110 can be provided with composition on the upper surface of which Sapphire substrate (PSS) structure.Certainly, substrate 110 is not limited to above-mentioned condition or structure.

Substrate 110 may be used for easily dissipating the heat produced from luminescent device 100, and because of This realizes the enhancing of heat stability of luminescent device 100.

Electrochemical metal deposition process can be used or use the associated methods of eutectic metal to realize The formation of substrate 110.

Substrate 110 can include first substrate part 110a making electrical contact with the first electrode 130；With Second substrate part 110b, this second substrate part 110b make electrical contact with the second electrode 150 simultaneously with First substrate part 110a separates distance s c.

First and second substrate portion 110a and 110b are spaced from each other distance s c, with the most electrically Ground insulation.The voltage of opposed polarity can be applied to the first and second electrodes 130 and 150 respectively.

Although the first and second substrate portion 110a and 110b are arranged in and second substrate portion Under the state that point 110b separates distance s c, first substrate part 110a is around second substrate part 110b, but the disclosure is not limited to this.

Internal compartment is formed as air, it may form part of be insulant, and the disclosure It is not limited to this.

Binder course 111 can be disposed in substrate 110 the first and second substrate portion 110a and On 110b.Binder course 111 can realize easily tying the first and second electrodes 130 and 150 Close substrate 110.

Binder course 111 can be formed as realizing combining and avoid diffusion.Such as, binder course 111 Can by indium (In), stannum (Sn), silver (Ag), niobium (Nb), nickel (Ni), aluminum (Al), Copper (Cu), platinum (Pt), lead (Pd), tungsten (W), nickel (Ni), ruthenium (Ru), Molybdenum (Mo), iridium (Ir), rhodium (Rh), tantalum (Ta), hafnium (Hf), zirconium (Zr), niobium (Nb), And at least one in vanadium (V) or its alloy make.Therefore, binder course 111 is permissible There is single layer structure or multiple structure.

The second electrode 150 making electrical contact with the second semiconductor layer 126 can be disposed in In a part for binder course 111 in second substrate part 110b.

Second electrode 150 can include reflecting layer (not shown) and electrode layer (not shown). Reflecting layer can be disposed on binder course 111, and electrode layer can be disposed in reflecting layer On.Certainly, the second electrode 150 is not limited to this layout.

Electrode layer can be made of an electrically conducting material.Such as, electrode layer can be by nickel (Ni), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh), tantalum (Ta), molybdenum (Mo), titanium (Ti), silver (Ag), Tungsten (W), copper (Cu), chromium (Cr), palladium (Pd), vanadium (V), cobalt (Co), niobium (Nb), zirconium (Zr), in indium tin oxide (ITO), aluminum zinc oxide (AZO) and indium-zinc oxide (IZO) At least one make.

Meanwhile, reflecting layer and electrode layer can have identical width.And, reflecting layer and electricity Pole layer can have different width or different length, or can have different width With different length.Certainly, reflecting layer and electrode layer are not limited to above-mentioned situation.

Can by while solidification process form reflecting layer and electrode layer.When reflecting layer and electrode When layer is cured simultaneously, it is possible to obtain excellent adhesion.

Current barrier layer (not shown) is inserted into the second electrode 150 and ray structure 120 Between, in order to the electric current collection limit phenomenon of the electric current provided from the second electrode 150 is provided.

The first electrode 130 making electrical contact with the first semiconductor layer 122 can be disposed in In a part for binder course 111 in first substrate part 110a.

First electrode 130 can when with the second electrode 150 electric insulation with the second electrode 150 separate.First electrode 130 can be made up of the material identical with the second electrode 120.First Electrode 150 can include reflecting layer and electrode layer in the way of identical with the second electrode 150.When So, the first electrode 130 is not limited to above-mentioned layout, condition and structure.

Insulating barrier 140 is inserted into the first electrode being disposed in first substrate part 110a Between 130 and the second electrode lay 126.

Insulating barrier 140 is disposed in side surface and second semiconductor layer 126 of ray structure 120 Lower surface a part on.Insulating barrier 140 can include the first insulating barrier 142, and this is first exhausted Edge layer 142 is disposed in the bottom surface section of the second semiconductor layer 126；With the second insulating barrier 144, this second insulating barrier 144 is disposed on the side surface of ray structure 120.Ray structure The side surface of 120 is to tilt.

Although each side surface of ray structure 120 be shown as being divided into sloping portion and from The step part that sloping portion extends, but the disclosure is not limited to this.

First and second insulating barriers 142 and 144 can be formed as having integral structure or point The structure opened.The material of the first and second insulating barriers 142 and 144 can be different.Certainly, First and second insulating barriers 142 and 144 are not limited to such condition.

First insulating barrier 142 can separate distance s c with the marginal portion of the second electrode 150.The Two insulating barriers 144 can be disposed on the inclined surface of ray structure 120.Second insulating barrier 144 step parts extending to the first semiconductor layer 122.Certainly, on the disclosure is not limited to State structure.

Second insulating barrier 144 does not extend to the upper surface of the first semiconductor layer 122.That is, The step part of semi-conductor layer 122 can outwards expose.Certainly, the disclosure is not limited to this knot Structure.

First and second insulating barriers 142 and 144 can have different width, but they are not It is limited to this.

First and second insulating barriers 142 and 144 can be made up of insulant.Such as, first Can be by silicon oxide (SiO with the second insulating barrier 142 and 144₂), silicon nitride (Si₃N₄) etc. Etc. making.First and second insulant 142 and 144 can be by having than the first electrode 130 The metal material of low electric conductivity is made so that they are more nearly insulator than the first electrode 130. Certainly, the first and second insulating barriers 142 and 144 are not limited to such condition.

First electrode 130 can include side surface portion 132 He being arranged on insulating barrier 140 Extend through the prolonging of hole (not shown) of the edge part office being formed at the first semiconductor layer 122 Extending portion divides 134.

Side surface portion 132 can be longer than insulating barrier 140.Side can be grown by depositing operation Surface portion 132.

Side surface portion 132 extends to be formed at the step part of the first semiconductor layer 122, That is, each hole of the edge part office of the first semiconductor layer 122.

Extension 134 is connected respectively to side surface portion 132, and in difference after via Extend to the upper surface of the first semiconductor layer 122.

Electrode pad 152 can be disposed in upper surface and the extension of each extension 134 Divide in the upper surface portion of the first semiconductor layer 122 around 134.

Each electrode pad 152 can be disposed in the limit of the upper surface of the first semiconductor layer 122 On edge portion.Refer to that electrode (arm electrode) is also disposed in the upper surface of the first semiconductor layer 122 Marginal portion on, to be connected to electrode pad 152.Certainly, the disclosure is not limited to this structure.

In addition to the first and second semiconductor layers 122 and 126, ray structure 120 can wrap Include the active layer 124 being inserted between the first and second semiconductor layers 122 and 126.

First semiconductor layer 122 can be made up of semiconducting compound.It is, for example possible to use III-V The first semiconductor layer 122 implemented by race or II-VI group quasiconductor.First semiconductor layer 122 is permissible Doped with the first conduction type alloy.For example, it is possible to implement first by n-type semiconductor layer Semiconductor layer 122.N type semiconductor layer can be by such as GaN, AlGaN and InGaN Make for one in GaN base compound semiconductor materials, and can be doped with n-type dopant.

Meanwhile, the electrode on the marginal portion of the upper surface being disposed in the first semiconductor layer 122 Pad 152 can be made up of the material with high conductivity, such as, makes nickel (Ni) etc. Become.In order to realize the enhancing of light extraction efficiency, it is possible to use specific engraving method, do not having Form surface element office or first quasiconductor of the first semiconductor layer 122 of electrode pad 152 The whole surface portion of layer 122 forms coarse 128.

As it has been described above, the extension 134 of the first electrode 310 respectively extends through to contact electricity The hole of pole pad 152 can be formed at the edge part office of the upper surface of the first semiconductor layer 122.

That is, the first semiconductor layer 122 includes first area (not shown), hangs down in this first area Directly overlapping second electrode 150；With second area (not shown), this second area does not has overlap First area includes forming porose marginal portion simultaneously.

Active layer 124 can be disposed in below the first semiconductor layer 122.Active layer 124 It it is the region of electrode and hole-recombination.Compound according to electronics and hole, active layer 124 becomes Low-lying level so that it can produce the light with the wavelength corresponding to energy level.

Active layer 124 can be by such as having In_xAl_yGa_1-x-yN (0≤x≤1,0≤y ≤ 1, and 0≤x+y≤1) the semi-conducting material of chemical formula make.Active layer 124 Can have single quantum or MQW (MQW) structure.

Therefore, during more polyelectron is gathered in the low-lying level part of quantum well layer.As a result, electronics and The probability of hole-recombination increases so that can obtain the illumination effect of enhancing.Active layer 124 Can also have quantum wire structure or quantum-dot structure.

Second semiconductor layer 126 can be disposed in below active layer 124.

Second semiconductor layer 126 can be made up of semiconducting compound.It is, for example possible to use III-V Race or II-VI group compound semiconductor implement the second semiconductor layer 126.Second semiconductor layer 126 Can be doped with the second conduction type alloy.For example, it is possible to implemented by p-type semiconductor layer Second semiconductor layer 126.In this case, hole can be noted by the second semiconductor layer 126 Enter in active layer 124.P-type semiconductor layer can be by such as having In_xAl_yGa_1-x-yN(0≤ X≤1,0≤y≤1, and 0≤x+y≤1) the semi-conducting material of chemical formula Make, such as, by GaN, AlN, AlGaN, InGaN, InN, InAlGaN or AlInN Make.P-type semiconductor layer can be doped with the p of such as Mg, Zn, Ca, Sr and Ba Type alloy.

3rd semiconductor layer (not shown) can be formed at below the second semiconductor layer 126. The 3rd semiconductor layer can be implemented by n-type semiconductor layer.

Simultaneously, it is possible to use metal organic chemical vapor deposition (MOCVD) method, chemistry gas Mutually deposition (CVD) method, plasma enhanced chemical vapor deposition (PECVD) method, Molecular beam epitaxy (MBE) method, hydride gas-phase epitaxy (HVPE) method or sputtering Method forms the first semiconductor layer 122, active layer 124 and the second semiconductor layer 126.When So, forming method is not limited to said method.

In contrast with the previous embodiment, the first semiconductor layer can be implemented by p-type semiconductor layer 122, and the second semiconductor layer 124 can be implemented by n-type semiconductor layer.Certainly, these public affairs Open and be not limited to this embodiment.

First semiconductor layer 122 can include the step part being formed without hole.Can be following During formed step part, wherein, in the manufacture of luminescent device 100, at process for sapphire-based Grow ray structure 120 on plate (not shown), and be then divided into by isolation technology Multiple ray structures being respectively provided with the size corresponding with device.Therefore, it can carry out the shape in hole Become.

Hereinafter, will describe in detail for manufacturing as above sending out referring to figs. 2 to Fig. 6 The method of optical device (not shown).

Fig. 2 to Fig. 6 is to illustrate that one of method for manufacturing the luminescent device shown in Fig. 1 is The sectional view of row technique.

With reference to Fig. 2, ray structure 120 can be grown on sapphire substrate 101.

Sapphire substrate 101 can be made up of the material being capable of easy semiconductor growing.

Such as, the material of sapphire substrate 101 can from by sapphire (Al2O3), GaN, The group of SiC, ZnO, Si, GaP, InP and GaAs composition selects.Although it is not shown, But cushion (not shown) can be formed at sapphire substrate 101 and ray structure 120 it Between.

Cushion can be by the crystalline substance that can reduce between sapphire substrate 101 and ray structure 120 The material of lattice constant difference is made.

Such as, cushion can be made up of the combination of III and V group element.Alternatively, buffering Layer can be by from GaN, InN, AlN, InGaN, AlGaN, InAlGaN and AlInN Make for one of middle selection.Cushion can be doped with alloy.

Ray structure 120 can include the first semiconductor layer 122, active layer 124 and the second half Conductor layer 126.This structure is identical with the structure described with reference to Fig. 1, and therefore, will not carry out Detailed description.

Fig. 2 (a) illustrates separable substrate 101 and the cross section of ray structure 120.Fig. 2 (b) It is that separable substrate 101 and the perspective view of ray structure 120 are shown.

With reference to Fig. 3, can be by isolation technology by the luminescence of growth on separable substrate 101 Structure 120 is divided into first to fourth ray structure being respectively provided with the size corresponding with device 120_1 to 120_4.

At this moment, step part s1 can be formed at first to fourth ray structure 120_1 to 120_4 In each at, to form step from the first semiconductor layer 122.

Step part s1 is corresponding to such as the secondth district combining the first semiconductor layer 122 described in Fig. 1 Territory.

It is disposed with the ray structure 120_1 to 120_4 of the second semiconductor layer 126 and active layer 124 In each correspond partly to as with reference to first of the first semiconductor layer 122 described in Fig. 1 Region.

In other words, during the isolation technology performed after the growth of ray structure 120, including Step part s1 in each in first to fourth ray structure 120_1 to 120_4 can Expose the region of the first semiconductor layer 122 being formed through step part s1.

Although step part s1 has described as and is formed at the first half and leads in the illustrated embodiment The edge part office of body layer 122, but the disclosure is not limited to this.Such as, step part s1 can To be formed at the side of the first semiconductor layer 122.

Therefore, first to fourth ray structure 120_ to 120_4 can have step shape. At least one hole h can be formed at step part s1.

At least one hole h can have circle.Alternatively, hole h can have polygonal shape Or there is the shape of curved edge.Certainly, hole is not limited to such shape.

At least one hole h can extend to and first surface phase from the first surface of step part s1 To the second surface of step part s1.

Fig. 3 is to illustrate first to fourth ray structure 120_1 to 120_4 and separable substrate The perspective view of 101.

Although in each being included in first to fourth ray structure 120_1 to 120_4 First semiconductor layer 122 be shown as with in first to fourth ray structure 120_1 to 120_4 Remainder separates, but the disclosure is not limited to this.

Such as, first semiconductor layer 122 of first to fourth ray structure 120_1 to 120_4 Can not be mutually isolated.

Fig. 4 illustrates a ray structure.Such as, Fig. 4 (a) is sectional view, and Fig. 4 (b) It it is perspective view.

With reference to Fig. 4, it is shown that the first ray structure 120_1.Hereinafter, it will combine first Photo structure 120_1 describes the manufacture of luminescent device 100.Of course, it is possible to by luminous with first Every by the second to the 4th ray structure 120_2 to 120_4 of the identical technique of structure 120_1 One is formed in luminescent device 100.

Second electrode 150 is disposed on the core of the second semiconductor layer 126.First is exhausted Edge layer 142 can be disposed on the marginal portion of the second semiconductor layer 126 simultaneously electric with second Pole 150 separates.

First insulating barrier 142 can have the thickness d 1 of the thickness d 2 less than the first electrode 130, But the disclosure is not limited to this.

Thereafter, the second insulating barrier 144 can be arranged to contact the first insulating barrier 142 edge simultaneously The side surface the first ray structure 120_1 extends to the step part of the first semiconductor layer 122 s1。

Therefore, the first and second insulating barriers 142 and 144 protect the first ray structure 120_1.? Combined Fig. 1 describe this structure and, will not be given its describe in detail.

After the formation of the first and second insulating barriers 142 and 144, the first electrode 130 is permissible It is disposed on the first insulating barrier 142.

As it has been described above, the first electrode 130 can include side surface portion 132, this side surface portion 132 are disposed on the first and second insulating barriers 142 and 144；With extension 134, this prolongs Extending portion divides 134 to extend through the hole h being formed at the first semiconductor layer 122.

In this case, the side surface portion 132 being disposed on the first insulating barrier 142 has Thickness d 3 less than the thickness d 2 of the first electrode 130.The thickness d 2 of the second electrode 150 is permissible Thickness d 1 and the thickness d 3 of the first electrode 130 equal to the first insulating barrier 142.Certainly, these public affairs Open and be not limited to this.

Extension 134 is electrically connected respectively to side surface portion 132.Extension 134 can be divided Not along the inside of hole h, i.e. extended by the first semiconductor layer 122.

In this case, extension 134 can have the shape identical with hole h.Often Individual extension 134 can have the width of the width w2 more than each side surface portion 132 w1.Certainly, the disclosure is not limited to this situation.

When the width w1 of each extension 134 increases, by increasing capacitance it is possible to increase extension 134 With separate at separable substrate 101 after the contact of electrode pad 152 that is disposed thereon Area.

Each extension 134 can be disposed on the non-C face of the first semiconductor layer 122, But the disclosure is not limited to this.

The extension 134 that each side surface portion 132 can have towards correspondence is gradually increased Thickness d 4, but the disclosure is not limited to this.

With reference to Fig. 5, binder course 111 and substrate 110 are attached to the first and second electrode 130 Hes 150.Laser beam hv is irradiated on the lower surface of separable substrate 101 so that by separable Substrate 101 separate with the first ray structure 120_1.

Although the laser beam hv being irradiated on the lower surface of separable substrate 101 is also irradiated to On the step part s1 of the first semiconductor layer 122, but owing to step part s1 makes these swash Light beam will not be irradiated to the second insulating barrier 144 and active layer 126.

Laser beam hv can damage the lower surface of the step part s1 of the first semiconductor layer 122.So And, this damage can show and be formed at the coarse identical effect on light-emitting area, thus its Do not interfere with luminous efficiency.

Because laser beam hv can be prevented straight by the step part s1 of the first semiconductor layer 122 Connect and be irradiated to active layer 124, it is possible to prevent the damage of active layer 124.As a result, it is possible to hold Change places and guarantee the reliability of luminescent device 100.

With reference to Fig. 6, after the separation of separable substrate 101, the pattern of coarse 128 is permissible It is formed in the part of the first semiconductor layer 122 or the whole part of the first semiconductor layer 122 On.Electrode pad 152 can be combined after the formation of coarse 128.

Luminescent device according to the embodiment illustrated can be mounted in a package.Can prepare many Individual light emitting device package, and be then arranged on substrate.Optical component, i.e. guide-lighting Plate, prismatic lens, diffusion sheet etc. can be arranged on the optical path of light emitting device package.

Fig. 7 be according at this widely described in the luminescence included as shown in Fig. 1 of embodiment The perspective view of the light emitting device package of device.

Fig. 7 is the perspective view seen through the part of light emitting device package 200.Although at this In embodiment, light emitting device package 200 is top view, but light emitting device package 200 can be Side view and be not limited to this.

With reference to Fig. 7, light emitting device package 200 can include luminescent device 210 and wherein arrange The main body 220 of optical device 210.

Main body 220 can include the first barrier rib 222, and this first barrier rib 222 is disposed in On one direction (not shown)；With the second barrier rib 224, this second barrier rib 224 is disposed in On the second direction (not shown) intersected with first direction.First and second barrier rib 222 Hes 224 be may be integrally formed and can be formed by extruded, etching etc. and be not limited to This.

That is, the first and second barrier ribs 222 and 224 can be by from such as polyphthalamide (PPA) resin, silicon (Si), aluminum (Al), aluminium nitride (AlN), aluminium oxide (AlOx), Photosensitive glass (PSG), polyamide 9T (PA9T), syndiotactic polytyrene (SPS), gold Genus, sapphire (Al2O3), beryllium oxide (BeO), pottery and printed circuit board (PCB) At least one of middle selection is made.

Can from depend on luminescent device 210 application and design from include triangle, rectangle, The top of variously-shaped middle selection first and second barrier rib 222 and 224 of polygon and circle Portion's shape, and it is not limited to this.

It addition, the first and second barrier ribs 222 and 224 are formed wherein arranges luminescent device 210 Cavity.The cross section of cavity can have cup-shaped, depression container shapes etc..Composition chamber First and second barrier ribs 222 and 224 of body can have lower section inclined plane upwards.

It addition, the flat surface of cavity can be from including triangle, rectangle, polygon and circle Variously-shaped middle selection, but be not limited to this.

First and second lead frames 213 and 214 can be disposed in below main body 220.The One lead frame 213 and the second lead frame 214 comprise such as titanium (Ti), copper (Cu), Nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), stannum (Sn), Silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru), ferrum (Fe) and its alloy Metal.It addition, the first and second lead frames can have monolayer or multiple structure, and It is not limited to this.

The medial surface of the first and second barrier ribs 222 and 224 can draw relative to first and second In wire frame 213 and 214 one tilts with predetermined angle.Launch from luminescent device 210 The angle of reflection of light can depend on that inclination angle changes.Therefore, it is possible to control to be released to outside The angle of orientation of light.Along with the minimizing of the angle of orientation of light, it is transmitted into outside from luminescent device 210 Light convergence increase.On the other hand, along with the increase of the angle of orientation of light, from luminescent device The convergence of 210 light being transmitted into outside reduces.

The inner side of main body 220 can have multiple inclination angle and be not limited to this.

First and second lead frames 213 and 214 are electrically connected to luminescent device 210, connect respectively To external power (not shown) just (+) and negative (-) electrode, and provide power to luminescence Device 210.

In the present embodiment, luminescent device 210 is disposed on the first lead frame 213, the Two lead frames 214 separate with the first lead frame 213, and luminescent device 210 is by tube core It is attached to the first lead frame 213 and is drawn to second by wiring (not shown) wire bonding Wire frame 214 comes from the electric power of the first and second lead frames 213 and 214 to receive.

Here, luminescent device 210 can be incorporated into first lead frame with opposed polarity 213 and second lead frame 214.

It addition, luminescent device 210 is wire-bonded or tube core is attached to the first and second lead-in wires Framework 213 and 214, and do not limit connecting forming method.

In the present embodiment, luminescent device 210 is arranged in the first lead frame 213, but It is not limited to this.

Draw it addition, luminescent device 210 can adhere to first by adhesive member (not shown) Wire frame 213.

Here, insulation barrier 216 can be formed at the first and second lead frames 213 and 214 Between to prevent the electric short circuit between the first and second lead frames 213 and 214.

In the present embodiment, insulation barrier 216 can have semicircular top and its shape It is not limited to this.

Main body 213 can be equipped with cathode mark 217.Cathode mark 217 divides luminescent device The polarity (that is, the polarity of the first and second lead frames 213 and 214) of 210, and therefore May be used for preventing the confusion when the first and second lead frame 213 and 214 electrical connections.

Luminescent device 210 can be light emitting diode.Light emitting diode can be launch the reddest The color light-emitting diode of the colourama of color, green, blueness or white light, or launch ultraviolet Ultraviolet (UV) light emitting diode of light, and it is not limited to this.Can exist and multiple be arranged on Luminescent device 210 on one lead frame 213, at least one luminescent device 210 may be mounted at On first and second lead frames 213 and 214, and the number of luminescent device 210 and position Do not limit.

Here, luminescent device 210 can be one in the luminescent device shown in Fig. 1, But it is not limited to this.

Main body 220 can include the resin material 218 being filled in cavity.That is, resin material 218 can have double molded structure or three molded structures and be not limited to this.

It addition, resin material 218 can be film type and include fluorophor and photodiffusion material In at least one.

It addition, resin material 218 can include the printing opacity material comprising fluorophor and photodiffusion material Material, but it is not limited to this.

Fig. 8 be include according to as at this widely described in the illumination of luminescent device of embodiment set Standby perspective view, Fig. 9 is the photograph intercepted along the line A-A ' of the luminaire shown in Fig. 8 The sectional view of bright equipment.

Hereinafter, in order to be better understood from, it will based on longitudinal direction (Z), be perpendicular to indulge To the horizontal direction (Y) of direction (Z) and be transversely to the machine direction direction (Z) and horizontal direction (Y) short transverse (X) describes luminaire 300.

That is, Fig. 9 is (Z) and the cross section taken of short transverse (X) in a longitudinal direction And the sectional view of the luminaire 300 of the Fig. 8 seen from horizontal direction (Y).

With reference to Fig. 8 and Fig. 9, luminaire 300 can include main body 310, be connected to main body 310 Lid 330 and be arranged in the end cap 350 at the two ends of main body 310.

Light emitting device module 340 is connected to the bottom of main body 310 and main body 310 can be by table The metal material of existing excellent electric conductivity and excellent radiating effect forms with by main body 310 Upper surface releases the light emitting device package 344 from the luminescent device (not shown) being respectively provided with Fig. 1 The heat produced.

Light emitting device package 344 can be arranged on printed circuit board (PCB) 342 with multirow There is shades of colour simultaneously, to form multi-color array.As required, can be at the same distance Light emitting device package 344 is installed, or with different distances, light emitting device package 344 can be installed Enable to carry out brightness regulation.PCB 342 can be metal-cored PCB (MPPCB) or Person's fire retardant 4 (FR4) framework.

Each light emitting device package 344 includes being formed with multiple hole and is made of an electrically conducting material Film.

Lid 330 can have the shape of circle with the lower surface around main body 310, but these public affairs Open and be not limited to this.

Lid 330 protects light emitting device module 340 for foreign etc..Lid 330 can comprise Light granule proliferation, to realize anti-dazzle effect and light equal produced from light emitting device package 644 Even transmitting.

At least one in the inner surface of lid 630 and outer surface can be provided with prism pattern.

And, phosphor layer can be applied to cover in the inner surface of 330 and outer surface extremely On few one.

Because the light produced from light emitting device package 344 is transmitted into outside, therefore by lid 330 Lid 330 should have high transmitance and be sufficient to resist the heat produced by light emitting device package 344 Thermostability.

To this end, lid 330 can be by polyethylene terephthalate (PET), Merlon (PC) or polymethyl methacrylate (PMMA) formed.

End cap 350 can be disposed in the two ends of main body 310 and for sealing supply unit (not Illustrate).

Each end cap 350 is equipped with power plug 352 so that according to the photograph of the embodiment illustrated Bright equipment 300 can be directly connected to the terminal arranged into traditional fluorescent lamp, and without additionally Adapter.

Figure 10 be illustrate include according to as at this widely described in the liquid of luminescent device of embodiment The perspective view of crystal display device.

Figure 10 shows edge lighting-type liquid crystal display 400, and it includes display panels 410 and for providing the back light unit 470 of light to display panels 410.

Display panels 410 utilizes from the light of back light unit 470 offer to show image.Liquid LCD panel 410 includes colored filter substrate 412 and thin film transistor base plate 714, this coloured silk Colo(u)r filter substrate 412 and thin film transistor base plate 4714 toward each other thus are inserted with liquid therebetween Brilliant.

Colored filter substrate 412 is capable of the face that will be shown by display panels 410 Color image.

Thin film transistor base plate 414 is electrically connected on it be provided with multiple electricity by drive membrane 417 The printed circuit board (PCB) 418 of circuit component.Thin film transistor base plate 414 is in response to from printed circuit board (PCB) 418 provide drive signals and can will come from printed circuit board (PCB) 418 driving voltage apply To liquid crystal.

Thin film transistor base plate 414 is included in other substrate being made up of such as glass or plastics On be formed as pixel electrode and the thin film transistor (TFT) of thin film.

Back light unit 470 includes: light emitting device module 420, and this light emitting device module 420 is launched Light；Light guide plate 430, the light launched from light emitting device module 420 is become flat by this light guide plate 430 This light is also provided display panels 410 by face light；Multiple films 450,466 and 464, its Make come from the brightness uniformity of the light of light guide plate 430 and improve vertical incidence；And reflector plate 440, this reflector plate 440 is transmitted into the light at light guide plate 430 back side towards light guide plate 430 reflection.

Light emitting device module 420 includes multiple light emitting device package 424 and PCB422, Duo Gefa Package of optical device 424 is arranged on PCB 422 to form array.

Meanwhile, back light unit 470 includes: diffusion barrier 466, and this diffusion barrier 466 is towards liquid crystal Show that panel 410 spreads the light from light guide plate 430 incidence；Prism film 450, this prism film 450 gathers Collect the light of diffusion and thus improve vertical incidence；And protecting film 464, this protecting film 464 is protected Protect mound mirror film 450.

Figure 11 be include according to as at this widely described in another embodiment include luminescent device The perspective view of liquid crystal display.

Mention the content that figure 9 illustrates and describe in no detail.

Figure 11 illustrates full run-down type liquid crystal display 500, this full run-down type liquid crystal display 500 Including display panels 510 and back light unit 570, this back light unit 570 is to LCD Plate 510 provides light.

Have been described with display panels 510 in Fig. 10 and therefore omit it and solve in detail Release.

Back light unit 570 includes: multiple light emitting device modules 523, reflector plate 524, Qi Zhongjie By the lower bottom base 530 of light emitting device module 523 and reflector plate 524 and be arranged on luminescent device Diffuser plate 540 in module 523 and multiple blooming 560.

Each light emitting device module 523 includes PCB 521 and multiple light emitting device package, described Multiple light emitting device packages 524 are arranged on PCB 521 to form array.

Reflector plate 524 reflects towards display panels 510 and produces from light emitting device package 522 Light, to improve luminous efficiency.

Meanwhile, the light launched from light emitting device module 523 incides diffuser plate 540 and light Learn film 560 to be arranged on diffuser plate 540.Blooming 560 includes diffusion barrier 566, prism film 550 and protecting film 564.

In an embodiment, luminaire 400 and liquid crystal display 500 and 600 can be wrapped Include in the illumination system and include that the illuminator of light emitting device package can be included in illumination In system.

As embody and widely described in luminescent device can allow to represent the luminous effect of raising Rate, stability, and improve safety and reliability.

In this manual for " embodiment ", " embodiment ", " example embodiment " Deng quote and mean that the special characteristic in conjunction with the embodiments described, structure or characteristic are included in this In at least one embodiment disclosed.In the description, this kind of phrase occurred at diverse location Need not all represent identical embodiment.Additionally, when in conjunction with any embodiment describe special characteristic, When structure or characteristic, other embodiments in all thinking in conjunction with the embodiments realize such feature, Structure or characteristic be also those skilled in the art it is conceivable that.

Although the multiple exemplary embodiments with reference to the disclosure describe embodiment, but should This understanding, those skilled in the art will be it is contemplated that other amendments multiple and embodiment will fall into In the spirit and scope of disclosure principle.More specifically, at this specification, accompanying drawing and appended In the building block of the theme combination layout in the range of claim and/or layout, various changes It is all possible with amendment.Except building block and/or arrange in change and modifications in addition to, right For those skilled in the art, alternative uses and also will be apparent from.

Claims

1. luminescent device, including:

Ray structure, described ray structure include the first semiconductor layer, the second semiconductor layer, with And active layer, described active layer is disposed between described first and second semiconductor layers；

First electrode, described first electrode is electrically connected to described first semiconductor layer；

Second electrode, described second electrode is electrically connected to described second semiconductor layer,

Substrate, described substrate is disposed in below described first and second electrodes,

Wherein said first semiconductor layer has hole, and described hole is formed at described first semiconductor layer Edge part office, described first electrode a part arrange in the hole,

Wherein said first semiconductor layer includes: first area, and described first area vertically weighs Folded described active layer；And second area, the most overlapping described first area of described second area, institute State second area and include being formed at which the described marginal portion in described hole,

Wherein said substrate includes:

First substrate part, the first electrode described in described first substrate part contact；And

Second substrate part, the second electrode described in described second substrate part contact, wherein said First substrate part and described second substrate part are spaced from each other spacing mutually electrically to insulate, And

Described luminescent device includes that electrode pad, described electrode pad are arranged in described the first half and lead On body layer, the described part of described first electrode in the hole is arranged in contact simultaneously, and

The of wherein said first substrate part and described second substrate part and described ray structure Semi-conductor layer, the second semiconductor layer and active layer are overlapping.

Luminescent device the most according to claim 1, wherein said first semiconductor layer has Coarse, and

Wherein said electrode pad be disposed in described coarse on.

Luminescent device the most according to claim 1, wherein said electrode pad has and is equal to Or the width of the width more than described hole.

Luminescent device the most according to claim 1, farther includes insulating barrier, described absolutely Edge layer is disposed in the side surface of described ray structure and the lower surface of described second semiconductor layer In a part.

Luminescent device the most according to claim 4, each side of wherein said ray structure Surface has sloping portion, and

Wherein said insulating barrier is disposed on described sloping portion.

Luminescent device the most according to claim 4, wherein said first electrode is disposed in On the lower surface of described insulating barrier and the side surface of described insulating barrier.

Luminescent device the most according to claim 6, wherein said hole have equal to or big The width of the width of the part of described first electrode on the side surface being arranged in described insulating barrier Degree.

Luminescent device the most according to claim 6, wherein said second electrode is disposed in Separate with described insulating barrier on the lower surface of described second semiconductor layer simultaneously.

9. according to the luminescent device described in claim 1 or claim 8, wherein said first At least one in ohm layer and reflecting layer, described Europe is included with at least one in the second electrode Nurse layer and reflecting layer are disposed on the lower surface of described first semiconductor layer.

Luminescent device the most according to claim 9, wherein said ohm layer and described instead Penetrate at least one in layer and there is the thickness of the thickness equal to or less than described first electrode.

11. luminescent devices according to claim 1, are wherein arranged in the hole The non-C face of the first semiconductor layer described in described first electrode contact.

12. light emitting device packages, including:

Luminescent device, described luminescent device includes light emitting diode；With

Main body, described main body includes the first lead frame and the second lead frame, and described first draws Wire frame is provided with described luminescent device, described second lead frame and described first lead frame Separate,

Wherein said luminescent device includes:

Ray structure, described ray structure include the first semiconductor layer, the second semiconductor layer, with And active layer, described active layer is arranged between described first and second semiconductor layers；

Wherein said substrate includes:

13. light emitting device packages according to claim 12, wherein said main body is provided with It is positioned at the cavity on described first and second lead frames, and described main body includes resin material, Described resin material is filled described cavity and comprises at least in fluorophor and photodiffusion material Individual.

14. light emitting device packages according to claim 12, farther include:

Insulation barrier, described insulation barrier is disposed between described first and second lead frames To prevent the electric short circuit between described first and second lead frames.

15. illuminators, including:

Light emitting device package, described light emitting device package includes luminescent device and main body, described master Body include on it arrange described luminescent device the first lead frame and with described first lead frame The second lead frame separated；With

Circuit board, it arranges described light emitting device package,

Wherein said luminescent device includes:

Ray structure, described ray structure include the first semiconductor layer, the second semiconductor layer, with And active layer, described active layer is inserted between described first and second semiconductor layers；

Wherein said substrate includes: