KR20140096855A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20140096855A
KR20140096855A KR1020130009981A KR20130009981A KR20140096855A KR 20140096855 A KR20140096855 A KR 20140096855A KR 1020130009981 A KR1020130009981 A KR 1020130009981A KR 20130009981 A KR20130009981 A KR 20130009981A KR 20140096855 A KR20140096855 A KR 20140096855A
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South Korea
Prior art keywords
layer
light emitting
electrode
emitting device
light
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KR1020130009981A
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Korean (ko)
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KR102042258B1 (en
Inventor
박경욱
이대희
이승일
임재영
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An embodiment of the present invention relates to a light emitting device. The light emitting device according to the embodiment of the present invention includes a light emitting structure which successively includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a first electrode which is arranged on the light emitting structure. The first electrode includes a first layer and a second layer. The second layer is arranged to cover the lateral side and the upper side of the first layer. The thickness of the first layer is thicker than the thickness of the second layer.

Description

[0001]

An embodiment relates to a light emitting element.

Light Emitting Diode (LED) is a device that converts electrical signals into light by using the characteristics of compound semiconductors. It is widely used in household appliances, remote control, electric signboard, display, and various automation devices. There is a trend.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, the luminance required for a lamp used in daily life and a lamp for a structural signal is increased. In order to increase the luminance of the LED, it is necessary to increase the luminous efficiency.

Such an LED forms an electrode on the light emitting structure in order to inject current into the light emitting structure. At this time, for wire bonding, gold (Au) is contained in the electrode, and the thickness of the gold layer is formed to 2000 nm to 3000 nm. As a result, there is a problem that the cost increases in the electrode formation.

Korean Unexamined Patent Publication No. 2005-0075947 discloses a nitride semiconductor light emitting device including a p-side bonding pad formed of a double layer of Ta / Au.

A copper layer, and a gold layer, thereby maintaining the wire bonding property while reducing the electrode formation cost.

The light emitting device according to an embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially, and a first electrode disposed on the light emitting structure, The first layer and the second layer, the second layer being disposed to cover the side surfaces and the upper surface of the first layer, and the thickness of the first layer may be thicker than the thickness of the second layer.

By forming the electrode including the copper layer thicker than the gold layer, the light emitting device according to the embodiment can maintain the wire bonding property while reducing the electrode formation cost, thereby increasing the reliability in fabricating the light emitting device package.

1 is a cross-sectional view of a vertical light emitting device according to an embodiment.
Figures 2 and 3 are diagrams illustrating the electrode portion of Figure 1;
4 is a cross-sectional view of a horizontal light emitting device according to an embodiment.
5 to 9 are views showing a manufacturing process of a light emitting device according to an embodiment.
10 is a cross-sectional view of a light emitting device package including the light emitting device according to the embodiment.
FIG. 11A is a perspective view showing a lighting device including a light emitting device module according to an embodiment, and FIG. 11B is a sectional view showing C-C 'of the lighting device of FIG. 11A.
12 and 13 are exploded perspective views of a liquid crystal display device including an optical sheet according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

1 is a cross-sectional view showing a cross section of a vertical type light emitting device according to an embodiment, and Figs. 2 and 3 are views showing electrode portions in Fig.

Referring to FIG. 1, a light emitting device 100 according to an embodiment includes a support substrate 110, a first conductive semiconductor layer 131, an active layer 132, and a second conductive semiconductor layer 133 A structure 130, a first electrode 150, a conductive layer 170, and a second electrode layer 160.

The support substrate 110 may be formed of a conductive material such as gold, gold, tungsten, molybdenum, copper, aluminum, tantalum, Ta, Ag, Pt, Cr, Si, Ge, GaAs, ZnO, GaN, Ga 2 O 3 or SiC, SiGe or CuW, or formed of two or more alloys And may be formed by laminating two or more different materials.

The support substrate 110 facilitates the emission of heat generated in the light emitting device 100, thereby improving the thermal stability of the light emitting device 100.

A coupling layer (not shown) may be formed on the supporting substrate 110 for coupling the supporting substrate 110 and the conductive layer 170. The bonding layer (not shown) may be formed of, for example, a layer composed of gold (Au), tin (Sn), indium (In), silver (Ag), nickel (Ni), niobium (Nb) and copper , Or an alloy thereof.

The light emitting structure 130 may be disposed on the support substrate 110 and may include a first conductive semiconductor layer 131, an active layer 132, and a second conductive semiconductor layer 133, And the active layer 132 may be interposed between the semiconductor layer 131 and the third conductivity type semiconductor layer 133. [

The first conductive semiconductor layer 131 is a semiconductor material having a composition formula of Al x In y Ga (1-xy) N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) For example, one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. And may be formed using another Group 5 element instead of N. For example, at least one of AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP. When the first conductivity type semiconductor layer 131 is, for example, an n-type semiconductor layer, it may include Si, Ge, Sn, Se, and Te as n-type impurities.

The active layer 132 may be formed on the first conductive semiconductor layer 131. The active layer 132 is a region where electrons and holes are recombined. As the electrons and the holes are recombined, the active layer 132 transits to a low energy level and can generate light having a wavelength corresponding thereto.

The active layer 132 includes a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) And may be formed of a single quantum well structure or a multi quantum well (MQW) structure.

Therefore, more electrons are collected at the lower energy level of the quantum well layer, and as a result, the recombination probability of electrons and holes is increased, and the luminous efficiency can be improved. It may also include a quantum wire structure or a quantum dot structure.

The second conductivity type semiconductor layer 133 may be formed on the active layer 132. The second conductive semiconductor layer 133 may be formed of, for example, a p-type semiconductor layer to inject holes into the active layer 132. For example, the p-type semiconductor layer may be a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like, and may be doped with p-type impurities such as Mg, Zn, Ca, Sr and Ba.

The first conductivity type semiconductor layer 131, the active layer 132 and the second conductivity type semiconductor layer 133 may be formed by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD) Deposition, plasma enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), and sputtering And the present invention is not limited thereto.

A conductive layer 170 and a second electrode layer 160 may be disposed between the support substrate 110 and the light emitting structure 130.

The conductive layer 170 is formed of a material selected from the group consisting of Ni-nickel, platinum Pt, titanium Ti, tungsten W, vanadium V, iron Fe, and molybdenum Mo Or an alloy optionally containing them.

The conductive layer 170 may be formed using a sputtering deposition method. When a sputtering deposition method is used, ions of the source material are sputtered and deposited as the ionized atoms are accelerated by an electric field to impinge on the source material of the conductive layer 170. In addition, an electrochemical metal deposition method, a bonding method using a eutectic metal, or the like may be used according to the embodiment. The conductive layer 170 may be formed of a plurality of layers according to an embodiment.

The conductive layer 170 has an effect of minimizing mechanical damage (cracking or peeling) that may occur in the manufacturing process of the light emitting device.

In addition, the conductive layer 170 has an effect of preventing diffusion of the metal material constituting the support substrate 110 or the bonding layer (not shown) into the light emitting structure 130.

The second electrode layer 160 can selectively use a metal and a light-transmitting conductive layer and provides power to the light-emitting structure 130. The second electrode layer 160 may be formed of a conductive material. For example, a metal such as nickel (Ni), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh), tantalum (Ta), molybdenum (Mo), titanium (Ti) (W), Cu, Cr, Pd, V, Co, Nb, Zr, Indium Tin Oxide (ITO) Aluminum zinc oxide (AZO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO) tin oxide, ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x , RuO x , RuO x / ITO, Ni / IrO x / Au, or Ni / IrO x / Au / ITO . However, the present invention is not limited thereto.

In addition, the second electrode layer 160 may be formed as a single layer or multiple layers of a reflective electrode material having an ohmic characteristic.

The second electrode layer 160 may have a structure of an ohmic layer 161 / a reflective layer 162 / a bonding layer (not shown) or a laminated structure of an ohmic layer 161 / a reflective layer 162 or a reflective layer ) / Bonding layer (not shown), but the present invention is not limited thereto.

The ohmic layer 161 is in ohmic contact with the lower surface of the light emitting structure (for example, the second conductivity type semiconductor layer 133), and may be formed in a layer or a plurality of patterns. The ohmic layer 161 may be made of a conductive material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO oxide, IGZO, IGTO, aluminum zinc oxide, ATO, GZO, IZO, AGZO, AlGaO, NiO, IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh , Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf. The ohmic layer 161 may be formed by a sputtering method or an electron beam evaporation method. The reflective layer 162 reflects light toward the upper side of the light emitting device 100 when a part of the light generated in the active layer 132 of the light emitting structure 130 is directed toward the supporting substrate 110, 100 can be improved.

The reflective layer 162 is made of a metal layer containing aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, The metal material and the light transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO can be used to form a multilayer. Further, the reflective layer 162 can be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / When the reflective layer 162 is formed of a material that makes an ohmic contact with the light emitting structure (for example, the second conductivity type semiconductor layer 133), the ohmic layer 161 may not be formed separately, but the present invention is not limited thereto.

Although the reflective layer 162 and the ohmic layer 161 are described as having the same width and length, at least one of the width and the length may be different and is not limited thereto.

The bonding layer (not shown) may include a barrier metal or a bonding metal such as titanium (Ti), gold (Au), tin (Sn), nickel (Ni), chromium (Cr) ), Indium (In), bismuth (Bi), copper (Cu), silver (Ag), or tantalum (Ta).

On the other hand, the first electrode 150 may be disposed on the first conductive semiconductor layer 131.

Referring to FIG. 2, the first electrode 150 may include a first layer 151a and a second layer 151b.

The first layer 151a and the second layer 151b may be formed of any one of indium (In), cobalt (Co), silicon (Si), germanium (Ge), palladium (Pd), platinum (Pt), ruthenium (Re), Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, (Cr), molybdenum (Mo), niobium (Nb), aluminum (Al) nickel (Ni), gold (Au), and copper (Cu).

Hereinafter, the first layer 151a includes copper (Cu), and the second layer 151b includes gold (Au).

The second layer 151b may be disposed so as to cover the side surfaces and the upper surface of the first layer 151a and surround the surface of the first layer 151a so as not to be exposed to the outside.

This prevents the first layer 151a from being corroded by external moisture or air and by disposing the second layer 151b on the surface, it is possible to prevent the second layer 151b The wire can be bonded to the surface, and the reliability of the wire bonding can be improved.

The thickness t1 of the first layer 151a may be greater than the thickness t3 of the second layer 151b while the thickness of the second layer 151b disposed on the top surface of the first layer 151a May be formed thicker than the thickness t2 of the second layer 151b disposed on the side surface of the first layer 151a.

Further, the second layer 151b disposed on the side surface of the first layer 151a may be formed to include the stepped portion.

When the thickness is formed as described above, the cost of copper (Cu) is lower than that of gold (Au) while keeping wire bonding characteristics, so that it can be efficient in terms of electrode production cost.

The thickness of the second layer 151b may be 100 to 1000 nm. If the thickness of the second layer 151b is thinner than 100 nm, the wire bonding characteristics may be affected and the reliability of the wire bonding may be deteriorated. On the other hand, when the thickness of the second layer 151b is 1000 nm or more, improvement in wire bonding characteristics may not be greatly improved.

The thickness t1 of the first layer 151a may be 2000 to 3000 nm and the thickness t1 of the first layer 151a may be determined by the thickness t3 of the second layer 151b. For example, when the thickness t1 of the first layer 151a is formed thinner than 2000 nm, the thickness t3 of the second layer 151b should be relatively thicker than 1000 nm. As described above, Even if the thickness t3 of the first electrode 151b is thicker than 1000 nm, the wire bonding characteristics are not improved, resulting in an increase in cost.

On the other hand, if the thickness t1 of the first layer 151a is thicker than 3000 nm, the thickness t3 of the second layer 151b relatively becomes thinner and the thickness of the second layer 151b (t3) is thinner than 100 nm, the wire bonding characteristics may be affected and the reliability of the wire bonding may be deteriorated.

In addition, although not shown, the first layer 151a and the second layer 151b may further include an adhesive layer having adhesiveness and conductivity, and may be formed of indium (In), cobalt (Co), silicon Si, Ge, Pd, Pt, Ru, Re, Mg, Zn, Hf, Rh, iridium, tungsten, titanium, silver, chromium, molybdenum, niobium, One or more than two alloys, or a layer of two or more different materials stacked.

Also, the above-described adhesive layer may be included between the copper layer 151a and the first conductivity type semiconductor layer 131. [

3, the first electrode 150 includes a first layer 151a, a second layer 151b located on the first layer 151a, and a second layer 151b on the second layer 151b. The second layer 152 may include a third layer 152, The first layer 151a may be composed of a layer 151a including copper and the second layer 151b may be composed of a layer 151b containing gold as described above with reference to FIG. 2. Although not shown, The third layer 152 may be formed of a plurality of layers.

The third layer 152 may be formed of any of indium (In), cobalt (Co), silicon (Si), germanium (Ge), gold (Au), palladium (Pd), platinum (Pt), ruthenium Re, magnesium, zinc, hafnium, tantalum, rhodium, iridium, tungsten, titanium, silver, chromium, (Cr), molybdenum (Mo), niobium (Nb), aluminum (Al), nickel (Ni), and copper (Cu).

At this time, the uppermost layer of the third layer 152 may be a gold (Au) layer, and the thickness of the gold layer may be 100 to 1000 nm as described in FIG.

7, the lower layer 151 and the third layer 152 including the first layer 151a and the second layer 151b may be formed with different areas. For example, the bottom layer 151 may be formed with a first area, and the third layer 152 may be formed with the second area, which is greater than the first area, on the bottom layer 151.

4 is a cross-sectional view of a horizontal light emitting device according to an embodiment.

4, the light emitting device 200 according to the embodiment includes a growth substrate 210, a buffer layer 220, a first conductive semiconductor layer 231, an active layer 232, a second conductive semiconductor layer 233 A first electrode 240, and a second electrode 250. The first electrode 240 and the second electrode 250 may be formed of the same material. 1, it further includes a growth substrate 210, a buffer layer 220, and a second electrode 250. Description of the same components will be omitted below.

Growth substrate 210 may be formed of a conductive substrate or an insulating substrate, e.g., sapphire (Al 2 O 3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga 2 0 3 < / RTI > The growth substrate 210 may be wet-cleaned to remove impurities on the surface, and the growth substrate 210 may be patterned (Patterned SubStrate, PSS) to improve light extraction efficiency, but is not limited thereto .

The buffer layer 220 may be formed on the growth substrate 210 to mitigate lattice mismatch between the growth substrate 210 and the first conductivity type semiconductor layer 231 and to facilitate growth of the conductivity type semiconductor layers.

The buffer layer 220 may include AlN, GaN, AlInN / GaN, InGaN / GaN, or AlInGaN / InGaN / GaN.

The second electrode 250 of FIG. 4 may be disposed on the upper surface of the second conductive semiconductor layer 233, and the first electrode 240 may be disposed on the exposed region of the first conductive semiconductor layer 231 As shown in FIG.

The first electrode 240 and the second electrode 250 may be formed of the same material as the first electrode 150 described with reference to FIGS. 1 to 3, 240 and the second electrode 250 may be the same.

For example, the first electrode 240 and the second electrode 250 may include a first layer 241, 251 comprising copper and a second layer 242, 252 comprising gold, . ≪ / RTI >

5 to 9 are views showing a manufacturing process of a light emitting device according to an embodiment.

Referring to FIG. 5, a buffer layer 102, a first conductivity type semiconductor layer 131, an active layer 132, and a second conductivity type semiconductor layer 133 are sequentially formed on a growth substrate 101.

The growth substrate 101 may be selected from the group consisting of a sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, and GaAs.

The buffer layer 102 may be formed of a combination of Group 3 and Group 5 elements, or may be formed of one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and may be doped with a dopant.

An undoped semiconductor layer (not shown) may be formed on the growth substrate 101 or the buffer layer 102, and either or both of the buffer layer 102 and the undoped conductive semiconductor layer Or not, and is not limited to such a structure.

The first conductivity type semiconductor layer 131, the active layer 132, and the second conductivity type semiconductor layer 133 may be sequentially formed on the growth substrate 101. [

The first conductivity type semiconductor layer 131 is formed by implanting silane gas (SiH 4) containing N-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3), nitrogen gas (N 2) .

The active layer 132 can be grown in a nitrogen atmosphere while injecting trimethyl gallium gas (TMGa) and trimethyl indium gas (TMIn), and can be grown in a single quantum well structure, a multi quantum well (MQW) -Wire structure, or a quantum dot structure.

The second conductivity type semiconductor layer 133 is formed by depositing 960? Hot trimethyl gallium gas (TMGa) and hydrogen as the carrier gas at least, trimethylaluminum gas (TMAl), Bisei butyl cyclopentadienyl magnesium (EtCp 2 Mg) {Mg ( C 2 H 5 C 5 H 4) 2} including But the present invention is not limited thereto.

Thereafter, the manufacturing processes of the vertical type light emitting device and the horizontal type light emitting device are changed.

6 is a view showing a manufacturing process of a vertical light emitting device after the process shown in FIG.

Referring to FIG. 6, the second electrode layer 160 may be formed on the second conductive semiconductor layer 133, and the supporting substrate 110 on which the conductive layer 170 is disposed may be bonded and bonded. At this time, the growth substrate 101 disposed on the first conductivity type semiconductor layer 131 can be separated.

At this time, the growth substrate 101 can be removed by a physical or / and chemical method, and the physical method can be removed, for example, by a LLO (laser lift off) method.

On the other hand, after the growth substrate 101 is removed, the buffer layer 102 can be removed. At this time, the buffer layer 102 may be removed by a dry or wet etching method or a polishing process.

Although not shown, the outer peripheral region of the light emitting structure 130 may be tilted by etching, and a passivation (not shown) may be formed in a part or the entire region of the outer peripheral surface of the light emitting structure 130 , Passivation (not shown) may be formed of an insulating material

7 and 8, the first electrode 150 may be formed on the surface of the first conductive semiconductor layer 131. Referring to FIG.

The first electrode 150 may be formed in two steps. After forming the first layer 151 illustrated in FIG. 3, as shown in FIG. 7A, Layer 152 may be formed.

At this time, the first layer 151 and the second layer 152 may be formed with different areas. For example, the first layer 151 may be formed with a first area, and the second layer 152 may be formed with the second area, which is greater than the first area, on the first layer 151. At this time, the first layer 151 may be formed on the wire bonding portion when the light emitting device package is manufactured.

Fig. 9 is a view showing the manufacturing process of the horizontal light emitting device after the process shown in Fig. 5;

Referring to FIG. 9, a portion of the first conductivity type semiconductor layer 231 is etched from the second conductivity type semiconductor layer 233 by a reactive ion etching (RIE) method. For example, when an insulating substrate such as a sapphire substrate is used, an electrode can not be formed under the substrate. Therefore, mesa etching is performed from the second conductive type semiconductor layer 233 to a part of the first conductive type semiconductor layer 231 , It is possible to secure a space in which electrodes can be formed. Accordingly, the first electrode 240 can be formed in the exposed region of the surface of the first conductive type semiconductor layer 231. In addition, the second electrode 250 may be formed on the second conductive type semiconductor layer 233.

At this time, the first electrode and the second electrode may be formed in the same process as the first electrode 150 of the vertical light emitting device described with reference to FIG.

At least one process in the process sequence shown in FIGS. 5 to 9 may be changed in order, but is not limited thereto.

10 is a cross-sectional view illustrating a light emitting device package including the light emitting device according to the embodiment.

10, the light emitting device package 300 according to the embodiment includes a body 310 having a cavity, a light source 320 mounted on a cavity of the body 310, and an encapsulant 350 filled in the cavity 310 can do.

The body 310 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photo sensitive glass (PSG), polyamide 9T (SPS), a metal material, sapphire (Al2O3), beryllium oxide (BeO), a printed circuit board (PCB), and ceramics. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The light source unit 320 is mounted on the bottom surface of the body 310. For example, the light source unit 320 may be any one of the light emitting devices shown in FIG. The light emitting device may be, for example, a colored light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) light emitting device that emits ultraviolet light. In addition, one or more light emitting elements can be mounted.

The body 310 may include a first lead frame 330 and a second lead frame 340. The first electrode 330 and the second electrode 340 may be electrically connected to the light source 320 to supply power to the light source 320.

The first lead frame 330 and the second lead frame 340 are electrically separated from each other to reflect the light generated from the light source unit 320 to increase the light efficiency, So that the heat can be discharged to the outside.

10 illustrates that both the first lead frame 330 and the second lead frame 340 are bonded to the light source 320 by the wire 360. However, the present invention is not limited thereto, Any one of the first lead frame 330 and the second lead frame 340 can be bonded to the light source unit 320 by the wire 360 and can be bonded to the light source unit 320 without the wire 360 by the flip- Or may be electrically connected.

The first lead frame 330 and the second electrode 340 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ta), platinum (Pt), tin (Ge), hafnium (Hf), ruthenium (Ru), and iron (Fe). In addition, the first lead frame 330 and the second lead frame 340 may be formed to have a single layer or a multilayer structure, but the present invention is not limited thereto.

The encapsulant 350 may be filled in the cavity and may include a phosphor (not shown). The encapsulant 350 may be formed of a transparent silicone, epoxy, or other resin material, and may be formed in such a manner that the encapsulant 350 is filled in the cavity and then cured by UV or thermal curing.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light source unit 320 so that the light emitting device package 300 may emit white light.

The fluorescent material (not shown) included in the encapsulant 350 may be a blue light emitting phosphor, a blue light emitting fluorescent material, a green light emitting fluorescent material, a yellow green light emitting fluorescent material, a yellow light emitting fluorescent material, , An orange light-emitting fluorescent substance, and a red light-emitting fluorescent substance may be applied.

That is, the phosphor (not shown) may be excited by the light having the first light emitted from the light source 320 to generate the second light. For example, when the light source 320 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light emitted from the blue light emitting diode and blue The light emitting device package 300 can provide white light as yellow light generated by excitation by light is mixed.

FIG. 11A is a perspective view showing a lighting device including a light emitting device module according to an embodiment, and FIG. 11B is a sectional view showing a C-C 'cross section of the lighting device of FIG. 11A.

11B is a sectional view of the lighting apparatus 400 of FIG. 11A cut in the longitudinal direction Z and the height direction X and viewed in the horizontal direction Y. FIG.

11A and 11B, the lighting apparatus 400 may include a body 410, a cover 430 to be coupled to the body 410, and a finishing cap 450 positioned at both ends of the body 410 have.

The light emitting device module 440 is coupled to a lower surface of the body 410. The body 410 is electrically connected to the light emitting device package 444 through a conductive material such that heat generated from the light emitting device package 444 can be emitted to the outside through the upper surface of the body 410. [ And may be formed of a metal material having excellent heat dissipation effect, but is not limited thereto.

Particularly, the light emitting device module 440 includes a sealing portion (not shown) that surrounds the light emitting device package 444 to prevent foreign matter from penetrating, thereby improving the reliability. In addition, . ≪ / RTI >

The light emitting device package 444 may be mounted on the substrate 442 in a multi-color, multi-row manner to form a module. The light emitting device package 444 may be mounted at equal intervals or may be mounted with various spacings as needed. As such a substrate 442, MCPCB (Metal Core PCB) or FR4 PCB can be used.

The cover 430 may be formed in a circular shape so as to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 protects the internal light emitting device module 440 from foreign substances or the like. The cover 430 may include diffusion particles to prevent glare of the light generated in the light emitting device package 444 and uniformly emit light to the outside and may include at least one of an inner surface and an outer surface of the cover 430 A prism pattern or the like may be formed on one side. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 430.

Since the light generated from the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 must have a high light transmittance and sufficient to withstand the heat generated from the light emitting device package 444. [ The cover 430 may be made of polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. It is preferable that it is formed of a material.

The finishing cap 450 is located at both ends of the body 410 and can be used for sealing the power supply unit (not shown). In addition, the fin 450 is formed on the finishing cap 450, so that the lighting device 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

12 and 13 are exploded perspective views of a liquid crystal display device including an optical sheet according to an embodiment.

12, the liquid crystal display device 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510 in an edge-light manner.

The liquid crystal display panel 510 can display an image using the light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal therebetween.

The color filter substrate 512 can realize the color of an image to be displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to a printed circuit board 518 on which a plurality of circuit components are mounted via a driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518. [

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 includes a light emitting device module 520 for outputting light, a light guide plate 530 for changing the light provided from the light emitting module 520 into a surface light source to provide the light to the liquid crystal display panel 510, A plurality of films 550, 566, and 564 for uniformly distributing the luminance of light provided from the light guide plate 530 and improving vertical incidence, and a reflective sheet (not shown) for reflecting light emitted to the rear of the light guide plate 530 to the light guide plate 530 540).

The light emitting device module 520 may include a PCB substrate 522 to mount a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 to form a module.

Particularly, the light emitting device module 520 includes a sealing portion (not shown) surrounding the light emitting device package 524 to prevent foreign matter from penetrating, thereby improving the reliability. In addition, . ≪ / RTI >

The backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for enhancing vertical incidence by condensing the diffused light And may include a protective film 564 for protecting the prism film 550. [

13 is an exploded perspective view of a liquid crystal display device including an optical sheet according to an embodiment. However, the parts shown and described in Fig. 12 are not repeatedly described in detail.

13, the liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610 in a direct-down manner.

Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 9, detailed description is omitted.

The backlight unit 670 includes a plurality of light emitting element modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting element module 623 and the reflective sheet 624 are accommodated, And a plurality of optical films 660 disposed on the diffuser plate 640.

The light emitting device module 623 may include a PCB substrate 621 to mount a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 to form a module.

Particularly, the light emitting element module 623 includes a sealing portion (not shown) surrounding the light emitting element package 622 to prevent foreign matter from penetrating thereto, thereby improving reliability. Further, the reliability of the backlight unit 670 is improved, . ≪ / RTI >

The reflective sheet 624 reflects light generated from the light emitting device package 622 in a direction in which the liquid crystal display panel 610 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element module 623 is incident on the diffusion plate 640 and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 is composed of a diffusion film 666, a prism film 650, and a protective film 664.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

110: Support substrate 131: First conductive semiconductor layer
132: active layer 133: second conductivity type semiconductor layer
150, 240: first electrode 250: second electrode

Claims (11)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially; And
And a first electrode disposed on the light emitting structure,
Wherein the first electrode comprises a first layer and a second layer,
Wherein the second layer is disposed so as to cover the side surfaces and the upper surface of the first layer and the thickness of the first layer is thicker than the thickness of the second layer. The method according to claim 1,
Wherein the first layer is a copper (Cu) layer and the second layer is a gold (Au) layer. The method according to claim 1,
Wherein the first electrode is disposed on an upper surface of the first conductive type semiconductor layer. The method according to claim 1,
Wherein the first electrode is disposed on an upper surface of the second conductive type semiconductor layer,
And a second electrode disposed on an upper surface of the first conductive semiconductor layer,
Wherein the first electrode and the second electrode comprise the same material. The method according to claim 1,
The first electrode comprising a lower layer having a first area and a third layer disposed on the lower layer and having a second area,
And the lower layer includes the first layer and the second layer. 6. The method of claim 5,
And at least one of the lower layer and the third layer includes gold (Au). The method according to claim 1,
Wherein the thickness of the first layer is 2000 to 3000 nm. The method according to claim 1,
And a bonding layer between the first layer and the second layer. The method according to claim 1,
And the thickness of the second layer is 100 to 1000 nm. The method according to claim 1,
Wherein a thickness of the second layer disposed on an upper surface of the first layer is thicker than a thickness of the second layer disposed on a side surface of the first layer. The method according to claim 1,
And the second layer disposed on a side surface of the first layer includes a step.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09320984A (en) * 1996-05-31 1997-12-12 Toyoda Gosei Co Ltd Electrode pad in p-conductive-type iii-group nitride semiconductor, element with electrode pad, and its manufacturing method
JPH10326943A (en) * 1997-03-26 1998-12-08 Nichia Chem Ind Ltd Nitride semiconductor element
JPH11121804A (en) * 1997-10-21 1999-04-30 Showa Denko Kk Electrode for semiconductor light emitting device
KR100594534B1 (en) * 2001-06-06 2006-06-30 도요다 고세이 가부시키가이샤 ? group nitride based semiconductor luminescent element and light-emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09320984A (en) * 1996-05-31 1997-12-12 Toyoda Gosei Co Ltd Electrode pad in p-conductive-type iii-group nitride semiconductor, element with electrode pad, and its manufacturing method
JPH10326943A (en) * 1997-03-26 1998-12-08 Nichia Chem Ind Ltd Nitride semiconductor element
JPH11121804A (en) * 1997-10-21 1999-04-30 Showa Denko Kk Electrode for semiconductor light emitting device
KR100594534B1 (en) * 2001-06-06 2006-06-30 도요다 고세이 가부시키가이샤 ? group nitride based semiconductor luminescent element and light-emitting device

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