KR20140097723A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20140097723A
KR20140097723A KR1020130009978A KR20130009978A KR20140097723A KR 20140097723 A KR20140097723 A KR 20140097723A KR 1020130009978 A KR1020130009978 A KR 1020130009978A KR 20130009978 A KR20130009978 A KR 20130009978A KR 20140097723 A KR20140097723 A KR 20140097723A
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South Korea
Prior art keywords
layer
light emitting
current
semiconductor layer
diffusion layer
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KR1020130009978A
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Korean (ko)
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서재원
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엘지이노텍 주식회사
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Priority to KR1020130009978A priority Critical patent/KR20140097723A/en
Publication of KR20140097723A publication Critical patent/KR20140097723A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

An embodiment of the present invention relates to a light emitting device. According to the embodiment of the present invention, the light emitting device may comprise: a light emitting structure including sequentially a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first current diffusion layer disposed on the second conductive semiconductor layer; a current block layer disposed on the first current diffusion layer; a second current diffusion layer disposed to cover at least one side surface and an upper surface of the current block layer; and a second electrode disposed on the second current diffusion layer to be vertically overlapped with the current block layer.

Description

[0001]

An embodiment relates to a light emitting element.

Light Emitting Diode (LED) is a device that converts electrical signals into light by using the characteristics of compound semiconductors. It is widely used in household appliances, remote control, electric signboard, display, and various automation devices. There is a trend.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, the luminance required for a lamp used in daily life and a lamp for a structural signal is increased. In order to increase the luminance of the LED, it is necessary to increase the luminous efficiency.

Such an LED has a problem in that the luminous efficiency is lowered when current is concentrated in any one part of the active layer, for example, between the n-electrode and the p-electrode. Thus, by forming the current blocking layer, it is necessary that the current spreads widely in each region of the light emitting structure.

1A and 1B, the current blocking layer 150 is formed on the second conductive semiconductor layer 160 so as to overlap with the second electrode 180, Thereby diffusing the current concentrated in the current source. Korean Patent No. 10-1054112 discloses a light emitting device including a current blocking layer under a p-electrode.

As described above, when the current blocking layer 150 is formed, the current injected into the second electrode 180 bypasses the current blocking layer 150 as shown by the dotted line in FIG. 1A, It is possible to prevent the current concentration phenomenon in the lower portion of the transistor 180.

The current diffused from the lower portion of the second electrode 180 to the adjacent region of the first electrode 170 is concentrated between the second electrode 180 and the first electrode 170 as shown in FIG. 130). ≪ / RTI >

The current bypassing the current blocking layer can be diffused widely to each region of the light emitting structure, and the p electrode area can be reduced to increase the light emitting efficiency.

A light emitting device according to an embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially, a first current diffusion layer disposed on the second conductive semiconductor layer, A second current diffusion layer disposed to cover at least one side surface and an upper surface of the current blocking layer, and a second current diffusion layer disposed on the second current diffusion layer to vertically overlap the current blocking layer, . ≪ / RTI >

The light emitting device according to the embodiment includes the current blocking layer and the plurality of current diffusion layers to effectively prevent the current concentration phenomenon, and the p electrode and the n electrode can be formed close to each other to reduce the electrode area.

Thus, the reliability of the light emitting element can be improved and the driving voltage can be lowered. In addition, the luminous efficiency can be improved.

FIGS. 1A and 1B illustrate a conventional horizontal light emitting device.
FIG. 2A is a cross-sectional view showing a horizontal cross section of the light emitting device according to the embodiment, and FIG. 2B is a plan view showing a plane of the light emitting device of FIG. 2A.
3 is an enlarged view of a portion A in Fig.
4 to 8 are views showing a manufacturing process of the light emitting device according to the embodiment.
9 is a cross-sectional view of a light emitting device package including the light emitting device according to the embodiment.
FIG. 10A is a perspective view showing a lighting device including a light emitting device module according to an embodiment, and FIG. 10B is a cross-sectional view showing C-C 'of the lighting device of FIG. 10A.
11 and 12 are exploded perspective views of a liquid crystal display device including an optical sheet according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

FIG. 2A is a cross-sectional view of a horizontal light emitting device according to an embodiment of the present invention, and FIG. 2B is a plan view of a horizontal light emitting device according to an embodiment.

2A, a light emitting device 200 according to an embodiment includes a growth substrate 210, a buffer layer 220, a first conductive semiconductor layer 231, an active layer 232, a second conductive semiconductor layer 233 A first current spreading layer 240, a current blocking layer 250, a second current spreading layer 260, a first electrode 270, and a second electrode 280.

Growth substrate 210 may be formed of a conductive substrate or an insulating substrate, e.g., sapphire (Al 2 O 3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga 2 0 3 < / RTI > The growth substrate 210 may be wet-cleaned to remove impurities on the surface, and the growth substrate 210 may be patterned (Patterned SubStrate, PSS) to improve light extraction efficiency, but is not limited thereto .

The buffer layer 220 may be formed on the growth substrate 210 to mitigate lattice mismatch between the growth substrate 210 and the first conductivity type semiconductor layer 231 and to facilitate growth of the conductivity type semiconductor layers.

The buffer layer 220 may include AlN, GaN, AlInN / GaN, InGaN / GaN, or AlInGaN / InGaN / GaN.

The light emitting structure 230 may be disposed on the growth substrate 210 and may include a first conductive semiconductor layer 231, an active layer 232, and a second conductive semiconductor layer 233, The active layer 232 may be interposed between the semiconductor layer 231 and the second conductivity type semiconductor layer 233. [

The first conductive semiconductor layer 231 may be a semiconductor material having a composition formula of Al x In y Ga (1-xy) N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) For example, one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. And may be formed using another Group 5 element instead of N. For example, at least one of AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP. When the first conductivity type semiconductor layer 231 is, for example, an n-type semiconductor layer, it may include Si, Ge, Sn, Se, and Te as n-type impurities.

The active layer 232 may be formed on the first conductive semiconductor layer 231. The active layer 232 is a region where electrons and holes are recombined. As the electrons and the holes are recombined, the active layer 232 transits to a low energy level and can generate light having a wavelength corresponding thereto.

The active layer 232 includes a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) And may be formed of a single quantum well structure or a multi quantum well (MQW) structure.

Therefore, more electrons are collected at the lower energy level of the quantum well layer, and as a result, the recombination probability of electrons and holes is increased, and the luminous efficiency can be improved. It may also include a quantum wire structure or a quantum dot structure.

The second conductivity type semiconductor layer 233 may be formed on the active layer 232. The second conductive semiconductor layer 233 is formed of a p-type semiconductor layer, and holes can be injected into the active layer 232. For example, the p-type semiconductor layer may be a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like, and may be doped with p-type impurities such as Mg, Zn, Ca, Sr and Ba.

The first conductive semiconductor layer 231, the active layer 232 and the second conductive semiconductor layer 233 may be formed by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD) Deposition, plasma enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), and sputtering And the present invention is not limited thereto.

Referring again to FIG. 2A, a first electrode 270 may be formed on the first conductive semiconductor layer 231, and a first current diffusion layer 240, a current blocking layer 240, The second electrode 250, the second current diffusion layer 260, and the second electrode 280 may be formed.

In addition, by mesa etching the second conductivity type semiconductor layer 233 to a portion of the first conductivity type semiconductor layer 231, a space for forming the first electrode 270 can be secured. The first electrode 270 may be formed on the exposed region of the first conductive semiconductor layer 231.

The current blocking layer 250 is formed on the first current spreading layer 240 so as to vertically overlap the second electrode 280 to prevent the light emitting layer 250 from emitting light in a region corresponding to the lower portion of the second electrode 280. This prevents light from traveling to the second electrode 280 and being absorbed and lost.

The current blocking layer 250 may include a material having low conductivity or an insulating material and may include at least one of TiO2, Ta2O3, Al2O3, SiO2, SiNx, SiONx, and SiCN, for example.

3, the width W2 of the current blocking layer 250 may be greater than the width W1 of the second electrode 280, and may be in the range of 10 to 300 袖 m.

When the width W2 of the current blocking layer 250 is less than 10 mu m, the effect of blocking the current in the area below the second electrode 280 is deteriorated. When the width W2 of the current blocking layer 250 is more than 300 mu m , Which may hinder the overall current flow.

The first current diffusion layer 240 and the second current diffusion layer 260 are formed on the second conductivity type semiconductor layer 233 so that the current is uniformly diffused on the second conductivity type semiconductor layer 233. If the current is uniformly distributed on the second conductivity type semiconductor layer 233 due to the first current diffusion layer 240, light can be generated uniformly in the active layer 232, thereby increasing light generation efficiency. The second current diffusion layer 260 may be disposed to cover at least one side surface and the upper surface of the current blocking layer 250.

The first current diffusion layer 240 and the second current diffusion layer 260 may be formed of a conductive and transparent material so as to diffuse current. For example, indium tin oxide (ITO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc ITO, Ni / IrOx / Au, or Ni / IrOx / Au), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, IrOx / Au / ITO. However, the present invention is not limited thereto.

Referring to FIG. 3, the thicknesses t2 and t1 of the first current diffusion layer 240 and the second current diffusion layer 260 may be the same, but are not limited thereto. The thickness t2, t1 of the first current diffusion layer 240 and the second current diffusion layer 260 may be 10 to 100 mu m.

If the thickness t2, t1 of the first current diffusion layer 240 and the second current diffusion layer 260 is thinner than 10 um, the operating voltage of the light emitting device increases. If it is thicker than 100 um, absorption of light generated in the active layer increases , The luminous efficiency may be lowered.

Further, one side of the current blocking layer facing the first electrode, one side of the first current diffusion layer, and one side of the second current diffusion layer may be disposed on the same vertical plane.

2A and 2B, the current injected into the second electrode 280 does not flow to the side region facing the first electrode 270, and the current flows into the first electrode 270 270 in the direction away from the current blocking layer 250.

The amount of the current injected into the region of the second conductive type semiconductor layer 233 facing the first electrode 270 is reduced so that the distance between the first electrode 270 and the second electrode 280 ) Can be efficiently mitigated.

The concentration of current between the first electrode 270 and the second electrode 280 can be mitigated and the second electrode 280 can be formed close to the first electrode. 280) can be reduced. Therefore, the luminous efficiency can be increased.

2A, the first electrode 270 and the second electrode 280 may be formed of a conductive material such as indium (In), cobalt (Co), silicon (Si), germanium (Ge), gold (Au), palladium (Pd), platinum (Pt), ruthenium (Ru), rhenium (Re), magnesium (Mg), zinc (Zn), hafnium Rh, iridium, tungsten, titanium, silver, chromium, molybdenum, niobium, aluminum, Cu), or may be formed of two or more alloys, or two or more different materials may be laminated.

4 to 8 are views showing a manufacturing process of the light emitting device according to the embodiment.

Referring to FIG. 4, a buffer layer 220, a first conductive semiconductor layer 231, an active layer 232, and a second conductive semiconductor layer 233 are sequentially formed on a growth substrate 210.

The growth substrate 210 may be selected from the group consisting of a sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, and GaAs.

The buffer layer 220 may be a combination of Group 3 and Group 5 elements, or may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and may be doped with a dopant.

An undoped semiconductor layer (not shown) may be formed on the growth substrate 210 or the buffer layer 220. Any one or both of the buffer layer 220 and the undoped conductive semiconductor layer Or not, and is not limited to such a structure.

The first conductivity type semiconductor layer 231, the active layer 232, and the second conductivity type semiconductor layer 233 may be sequentially formed on the growth substrate 210. [

The first conductivity type semiconductor layer 231 is formed by implanting silane gas (SiH 4) containing N-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3), nitrogen gas (N 2) .

The active layer 232 can be grown in a nitrogen atmosphere while injecting trimethyl gallium gas (TMGa) and trimethyl indium gas (TMIn), and can be grown in a single quantum well structure, a multi quantum well (MQW) -Wire structure, or a quantum dot structure.

The second conductivity type semiconductor layer 233 is formed by depositing 960? (TMGa), trimethylaluminum gas (TMAl), bisethylcyclopentadienyl magnesium (EtCp2Mg) {Mg (C2H5C5H4) 2} can be grown by using hydrogen as a carrier gas at a high temperature But is not limited to.

Referring to FIG. 5, a portion of the first conductivity type semiconductor layer 231 is etched from the second conductivity type semiconductor layer 233 by a reactive ion etching (RIE) method. For example, when an insulating substrate such as a sapphire substrate is used, an electrode can not be formed under the substrate. Therefore, mesa etching is performed from the second conductive type semiconductor layer 233 to a part of the first conductive type semiconductor layer 231 , It is possible to secure a space in which electrodes can be formed.

Referring to FIG. 6, a first current diffusion layer 240 may be formed on the untreated second conductive semiconductor layer 233. 7, a current blocking layer 250 may be formed on the first current spreading layer 240, and a second current spreading layer 260 may be formed on the current blocking layer 250. Referring to FIG. At this time, one side of the current blocking layer 250 facing the first electrode, the first current diffusion layer 240, and the second current diffusion layer 260 may be formed on the same vertical line.

The current blocking layer 250 may be formed of a material having low conductivity or an insulating material for current blocking and may include at least one of TiO2, Ta2O3, Al2O3, SiO2, SiNx, SiONx, and SiCN .

In addition, the first current diffusion layer 240 and the second current diffusion layer 260 may be formed of a conductive and transparent material.

Referring to FIG. 8, the first electrode 270 may be formed on the etched exposed region of the surface of the first conductive semiconductor layer 231, and the second electrode 280 may be formed on the second current diffusion layer 260. .

At least one process in the process sequence shown in FIGS. 4 to 8 may be changed in order, but is not limited thereto.

9 is a cross-sectional view illustrating a light emitting device package including the light emitting device according to the embodiment.

9, the light emitting device package 300 according to the embodiment includes a body 310 having a cavity, a light source 320 mounted on a cavity of the body 310, and an encapsulant 350 filled in the cavity 310 can do.

The body 310 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photo sensitive glass (PSG), polyamide 9T (SPS), a metal material, sapphire (Al2O3), beryllium oxide (BeO), a printed circuit board (PCB), and ceramics. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The light source unit 320 is mounted on the bottom surface of the body 310. For example, the light source unit 320 may be any one of the light emitting devices shown in FIG. The light emitting device may be, for example, a colored light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) light emitting device that emits ultraviolet light. In addition, one or more light emitting elements can be mounted.

The body 310 may include a first lead frame 330 and a second lead frame 340. The first lead frame 330 and the second lead frame 340 may be electrically connected to the light source unit 320 to supply power to the light source unit 320.

The first lead frame 330 and the second lead frame 340 are electrically separated from each other to reflect the light generated from the light source unit 320 to increase the light efficiency, So that the heat can be discharged to the outside.

9 shows that both the first lead frame 330 and the second lead frame 340 are bonded to the light source 320 by the wires 360. However, the present invention is not limited thereto, Any one of the first lead frame 330 and the second lead frame 340 can be bonded to the light source unit 320 by the wire 360 and can be bonded to the light source unit 320 without the wire 360 by the flip- Or may be electrically connected.

The first lead frame 330 and the second lead frame 340 may be formed of a metal material such as Ti, Cu, Ni, Au, Cr, (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), aluminum (Al) And may include one or more materials or alloys of germanium (Ge), hafnium (Hf), ruthenium (Ru), and iron (Fe). In addition, the first lead frame 330 and the second lead frame 340 may be formed to have a single layer or a multilayer structure, but the present invention is not limited thereto.

The encapsulant 350 may be filled in the cavity and may include a phosphor (not shown). The encapsulant 350 may be formed of a transparent silicone, epoxy, or other resin material, and may be formed in such a manner that the encapsulant 350 is filled in the cavity and then cured by UV or thermal curing.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light source unit 320 so that the light emitting device package 300 may emit white light.

The fluorescent material (not shown) included in the encapsulant 350 may be a blue light emitting phosphor, a blue light emitting fluorescent material, a green light emitting fluorescent material, a yellow green light emitting fluorescent material, a yellow light emitting fluorescent material, , An orange light-emitting fluorescent substance, and a red light-emitting fluorescent substance may be applied.

That is, the phosphor (not shown) may be excited by the light having the first light emitted from the light source 320 to generate the second light. For example, when the light source 320 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light emitted from the blue light emitting diode and blue The light emitting device package 300 can provide white light as yellow light generated by excitation by light is mixed.

10A is a perspective view illustrating a lighting device including a light emitting device module according to an embodiment, and FIG. 10B is a cross-sectional view illustrating a C-C 'cross section of the lighting device of FIG. 10A.

10B is a cross-sectional view of the lighting device 400 of FIG. 10A cut in the longitudinal direction Z and the height direction X and viewed in the horizontal direction Y. FIG.

10A and 10B, the lighting device 400 may include a body 410, a cover 430 coupled to the body 410, and a finishing cap 450 positioned at opposite ends of the body 410 have.

The light emitting device module 440 is coupled to a lower surface of the body 410. The body 410 is electrically connected to the light emitting device package 444 through a conductive material such that heat generated from the light emitting device package 444 can be emitted to the outside through the upper surface of the body 410. [ And may be formed of a metal material having excellent heat dissipation effect, but is not limited thereto.

Particularly, the light emitting device module 440 includes a sealing portion (not shown) that surrounds the light emitting device package 444 to prevent foreign matter from penetrating, thereby improving the reliability. In addition, . ≪ / RTI >

The light emitting device package 444 may be mounted on the substrate 442 in a multi-color, multi-row manner to form a module. The light emitting device package 444 may be mounted at equal intervals or may be mounted with various spacings as needed. As such a substrate 442, MCPCB (Metal Core PCB) or FR4 PCB can be used.

The cover 430 may be formed in a circular shape so as to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 protects the internal light emitting device module 440 from foreign substances or the like. The cover 430 may include diffusion particles to prevent glare of the light generated in the light emitting device package 444 and uniformly emit light to the outside and may include at least one of an inner surface and an outer surface of the cover 430 A prism pattern or the like may be formed on one side. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 430.

Since the light generated from the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 must have a high light transmittance and sufficient to withstand the heat generated from the light emitting device package 444. [ The cover 430 may be made of polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. It is preferable that it is formed of a material.

The finishing cap 450 is located at both ends of the body 410 and can be used for sealing the power supply unit (not shown). In addition, the fin 450 is formed on the finishing cap 450, so that the lighting device 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

11 and 12 are exploded perspective views of a liquid crystal display device including an optical sheet according to an embodiment.

11, the liquid crystal display device 500 may include a backlight unit 570 for providing light to the liquid crystal display panel 510 and the liquid crystal display panel 510 in an edge-light manner.

The liquid crystal display panel 510 can display an image using the light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal therebetween.

The color filter substrate 512 can realize the color of an image to be displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to a printed circuit board 518 on which a plurality of circuit components are mounted via a driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518. [

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 includes a light emitting device module 520 for outputting light, a light guide plate 530 for changing the light provided from the light emitting module 520 into a surface light source to provide the light to the liquid crystal display panel 510, A plurality of films 550, 566, and 564 for uniformly distributing the luminance of light provided from the light guide plate 530 and improving vertical incidence, and a reflective sheet (not shown) for reflecting light emitted to the rear of the light guide plate 530 to the light guide plate 530 540).

The light emitting device module 520 may include a PCB substrate 522 to mount a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 to form a module.

Particularly, the light emitting device module 520 includes a sealing portion (not shown) surrounding the light emitting device package 524 to prevent foreign matter from penetrating, thereby improving the reliability. In addition, . ≪ / RTI >

The backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for enhancing vertical incidence by condensing the diffused light And may include a protective film 564 for protecting the prism film 550. [

12 is an exploded perspective view of a liquid crystal display device including an optical sheet according to an embodiment. However, the parts shown and described in Fig. 11 are not repeatedly described in detail.

12, the liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610 in a direct-down manner.

Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 9, detailed description is omitted.

The backlight unit 670 includes a plurality of light emitting element modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting element module 623 and the reflective sheet 624 are accommodated, And a plurality of optical films 660 disposed on the diffuser plate 640.

The light emitting device module 623 may include a PCB substrate 621 to mount a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 to form a module.

Particularly, the light emitting element module 623 includes a sealing portion (not shown) surrounding the light emitting element package 622 to prevent foreign matter from penetrating thereto, thereby improving reliability. Further, the reliability of the backlight unit 670 is improved, . ≪ / RTI >

The reflective sheet 624 reflects light generated from the light emitting device package 622 in a direction in which the liquid crystal display panel 610 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element module 623 is incident on the diffusion plate 640 and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 is composed of a diffusion film 666, a prism film 650, and a protective film 664.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

210: growth substrate 220: buffer layer
231: first conductivity type semiconductor layer 232: active layer
233: second conductivity type semiconductor layer 240: first current diffusion layer
250: current blocking layer 260: second current spreading layer
270: first electrode 280: second electrode

Claims (9)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially;
A first current diffusion layer disposed on the second conductive type semiconductor layer;
A current blocking layer disposed on the first current diffusion layer;
A second current diffusion layer disposed to cover at least one side surface and an upper surface of the current blocking layer; And
And a second electrode disposed on the second current diffusion layer to vertically overlap the current blocking layer. The method according to claim 1,
And a first electrode disposed on the first conductive type semiconductor layer,
Wherein one side of the current blocking layer facing the first electrode, one side of the first current diffusion layer, and one side of the second current diffusion layer are disposed on the same vertical plane. The method according to claim 1,
Wherein at least one of the thicknesses of the first current diffusion layer and the second current diffusion layer is 10 to 100 nm. The method according to claim 1,
Wherein the first current diffusion layer and the second current diffusion layer have the same thickness. The method according to claim 1,
Wherein the first current diffusion layer and the second current diffusion layer include at least one of ITO, TO, IZO, ITZO, and ZnO. The method according to claim 1,
And the width of the current blocking layer is 10 to 300 μm. The method according to claim 1,
Wherein a width of the current blocking layer is larger than a width of the second electrode. The method according to claim 1,
Wherein the current blocking layer comprises at least one of TiO2, Ta2O3, Al2O3, SiO2, SiNx, SiONx, and SiCN. The method according to claim 1,
Wherein the first conductivity type semiconductor layer is an n-type semiconductor layer, and the second conductivity type semiconductor layer is a p-type semiconductor layer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116825924A (en) * 2023-08-24 2023-09-29 山西中科潞安紫外光电科技有限公司 Deep ultraviolet LED flip chip and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116825924A (en) * 2023-08-24 2023-09-29 山西中科潞安紫外光电科技有限公司 Deep ultraviolet LED flip chip and preparation method thereof
CN116825924B (en) * 2023-08-24 2023-12-19 山西中科潞安紫外光电科技有限公司 Deep ultraviolet LED flip chip and preparation method thereof

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