KR20120061065A - Light emitting device and fabrication method thereof - Google Patents

Abstract

PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve the brightness of the light emitting device by increasing recombination between holes and electrons. CONSTITUTION: A first electrode layer(130) is formed on a first surface of a support substrate(110). A light emitting structure(120) is formed on the first electrode layer. The light emitting structure includes a first conductive semiconductor layer(121), a second conductive semiconductor layer(123), and an active layer(122). A second electrode layer(140) is formed on the second surface of the support substrate. An electrode pad(152) is located on the upper side of the first conductive semiconductor layer.

Description

Light emitting device and manufacturing method thereof

The embodiment relates to a light emitting device and a method of manufacturing the same.

Light Emitting Device (LED) is a device that converts an electric signal into a form of light such as infrared rays, visible rays or ultraviolet rays by using the characteristics of a compound semiconductor, and is used for home appliances, remote controls, electronic displays, indicators, and various automation devices. It is used, and the use area of the light emitting device is gradually increasing.

As the use area of the light emitting device becomes wider as described above, the luminance required for electric light used for living, electric light for rescue signals, and the like is increased. Therefore, it is important to increase the light emission luminance of the light emitting device.

On the other hand, the light emission luminance of the light emitting device is due to the recombination of electrons and holes. Generally, holes have lower mobility than electrons and the number of electrons is smaller than electrons. The light emission luminance of the light emitting device that is recombined is dependent on the hole.

The embodiment provides a light emitting device that increases the concentration of holes and improves the hole diffusion effect, thereby increasing luminance.

The light emitting device according to the embodiment is located on the support substrate, the first electrode layer on the first surface of the support substrate, and the first electrode layer, and the first conductive semiconductor layer, the second conductive semiconductor layer, the first conductive semiconductor layer and the second conductive layer. It includes a light emitting structure having an active layer between the conductive semiconductor layer, the thickness of the second conductive semiconductor layer may be 300nm to 1㎛.

In addition, the first electrode layer and the second conductive semiconductor layer may contact each other, the first electrode layer may include at least one protrusion, and the second conductive semiconductor layer may include a cavity corresponding to the protrusion.

The protrusion may also include an insulating layer at the end.

In addition, the second conductive semiconductor layer may be a p-type semiconductor layer, and aluminum (Al) may be doped.

In addition, the light emitting device manufacturing method according to the embodiment, forming a light emitting structure comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially positioned on a substrate, at least one on the second conductive semiconductor layer Forming a cavity of the substrate; forming a first electrode layer on the second conductive semiconductor layer; and forming a support substrate on the first electrode layer, wherein the second conductive semiconductor layer has a thickness of 300 nm to 1 μm. It is formed to have, and the first electrode layer may be filled in the cavity.

In addition, the method may include forming an insulating layer on a bottom surface of the cavity between forming the cavity and forming the first electrode layer.

In the light emitting device of the embodiment, the light emission luminance may increase as the concentration of holes increases and the hole diffusion effect is improved.

1 is a cross-sectional view showing a cross section of a light emitting device according to the embodiment;
2 to 6 illustrate a method of manufacturing the light emitting device of FIG.
7 is a cross-sectional view showing a cross section of a light emitting device according to the embodiment;
8 is a cross-sectional view showing a cross section of a light emitting device package according to the embodiment;
9A is a perspective view of a lighting apparatus including a light emitting device according to an embodiment;
9B is a perspective view of a lighting device including a light emitting device according to the embodiment;
10 is an exploded perspective view illustrating a liquid crystal display device including the light emitting device according to the embodiment;
11 is an exploded perspective view illustrating a liquid crystal display device including the light emitting device according to the embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, exemplary embodiments will be described in more detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a cross section of a light emitting device according to the embodiment.

Referring to FIG. 1, a light emitting device 100 according to an exemplary embodiment includes a support substrate 110, a light emission disposed on a first electrode layer 130 and a first electrode layer 130 on a first surface of the support substrate 110. The light emitting structure 120 may include a structure 120, and the light emitting structure 120 may include a first conductive semiconductor layer 121, a second conductive semiconductor layer 123, and a first conductive semiconductor layer 121 and a second conductive semiconductor layer 123. The active layer 122 may be provided between the layers.

The support substrate 110 may be formed using a material having excellent thermal conductivity, and may also be formed of a conductive material, and may be formed using a metal material. The support substrate 110 may be formed in a single layer, or may be formed in a double structure or multiple structures.

That is, the support substrate 110 may be formed of any one selected from a metal, for example, Au, Ni, W, Mo, Cu, Al, Ta, Ag, Pt, or Cr, or may be formed of two or more alloys. The above materials can be laminated and formed. In addition, the support substrate 110 is Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, Ga ₂ O ₃ It may be implemented as a carrier wafer such as.

The support substrate 110 may facilitate the emission of heat generated from the light emitting device 100 to improve the thermal stability of the light emitting device 100.

The first electrode layer 130 may be used in the form of a metal oxide or a metal, for example, at least one of ITO, AZO, IZO, Ag, Pt, Ni, Au, Rh, Pd, or an alloy thereof, and at least one protrusion ( 132). The protrusion 132 may be inserted into the second conductive semiconductor layer 123 to improve mobility and diffusion efficiency of a carrier in the second conductive semiconductor layer 123.

Meanwhile, referring to an enlarged view of portion A of FIG. 1, the protrusion 132 may include an insulating layer 133 at an end, that is, the point where the protrusion 132 and the active layer 122 have the shortest interval. The insulating layer 133 may be formed using an insulating material such as silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), and the like to prevent clustering of holes on the protruding portion 132. Holes in the conductive semiconductor layer 123 may be more effectively diffused from side to side. In this case, the distance T ₂ from the active layer 122 to the insulating layer 133 may be 10 nm or more.

Two or more such protrusions 132 may be formed. When a plurality of protrusions 132 are formed, the protrusions 132 may be symmetrically positioned in the drawing so that holes may be uniformly diffused in the second conductive semiconductor layer 123.

Meanwhile, the first electrode layer 130 and the support substrate 110 may be attached by an adhesive layer (not shown).

When the support substrate 110 is conductive, the adhesive layer (not shown) may be formed of a barrier metal or a bonding metal, such as Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. It may include at least one, but is not limited thereto. On the other hand, when the substrate 110 has an insulating property, the adhesive layer (not shown) may be formed of a high temperature polymer adhesive that maintains adhesiveness in a high temperature atmosphere and does not melt. On the other hand, the adhesive layer (not shown) may be formed by bonding different adhesive layers, but is not limited thereto.

The second electrode layer 140 may be positioned on a second surface of the support substrate 110 that faces the first surface of the support substrate 110 that is bonded to the first electrode layer 130.

Although not shown in the drawings, a reflective film (not shown) may be positioned between the first electrode layer 130 and the support substrate 110, and the reflective film (not shown) may be formed in the active layer 122 of the light emitting structure 120. When some of the generated light is directed toward the support substrate 110, the light may be reflected toward the upper portion of the light emitting device 100 to improve light extraction efficiency of the light emitting device 100. The reflective layer may be formed of one layer or a plurality of layers of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a material composed of two or more alloys thereof.

The light emitting structure 120 may include at least a first conductive semiconductor layer 121, an active layer 122, and a second conductive semiconductor layer 123, and include a first conductive semiconductor layer 121 and a second conductive semiconductor layer ( The active layer 122 may be interposed between 123.

The first conductive semiconductor layer 121 may be implemented as an n-type semiconductor layer, the n-type semiconductor layer is for _{example, In x Al y Ga 1 -x-} y N (0 = x = 1, 0 = y = 1, 0 = x + y = 1), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, or the like, and for example, Si, Ge, Sn, N-type dopants such as Se and Te are doped.

An electrode pad 152 made of nickel (Ni) or the like may be disposed on the first conductive semiconductor layer 121, and may be formed on a part of the surface of the first conductive semiconductor layer 121 or a whole area of the photo electrochemical. By using a method such as) it can form the uneven 150 to improve the light extraction efficiency.

The active layer 122 is formed on the first conductive semiconductor layer 121. The active layer 120 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of a group III-V group element.

The active layer 120 in this case formed of a quantum well structure, for example, having a compositional formula of _{In x Al y Ga 1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) It may have a single or quantum well structure having a well layer and a barrier layer having a composition formula of In _a Al _b Ga _{1 -a- b} N (0 = a = 1, 0 = b = 1, 0 = a + b = 1). Can be. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive clad layer may be formed on or under the active layer 122. The conductive clad layer may be formed of an AlGaN-based semiconductor and may have a higher band gap than the band gap of the active layer 122.

The second conductivity type semiconductor layer 123 may be formed on the active layer 122. The second conductive semiconductor layer 123 may be implemented as a p-type semiconductor layer doped with a p-type dopant. The p-type semiconductor layer contains a semiconductor material, for example, having a compositional formula of _{In x Al y Ga 1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like may be selected, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

The light emitting structure 120 may include a third conductive semiconductor layer (not shown) having a polarity opposite to that of the second conductive semiconductor layer 123 under the second conductive semiconductor layer 123. have. In addition, the first conductivity-type semiconductor layer 121 may be a P-type semiconductor layer, and the second conductivity-type semiconductor layer 123 may be implemented as an N-type semiconductor layer. Accordingly, the light emitting structure layer 125 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

In particular, the second conductive semiconductor layer 123 may be doped with Al below 1% in addition to the above-described dopant, thereby improving the band gap of the second conductive semiconductor layer 123 to prevent absorption of light generated in the active layer 122. can do. In addition, the doping of Al together may improve the crystallinity of the second conductive semiconductor layer 123, thereby preventing the hole injection efficiency due to the decrease in the crystallinity of the second conductive semiconductor layer 123.

On the other hand, in order to improve the emission luminance of the light emitting device 100, it is important to improve the probability of recombination of holes and electrons, the second conductive semiconductor layer 123 according to the embodiment is 300nm to improve the concentration of holes It may have a thickness T _{1 of 1} μm.

When the thickness T ₁ of the second conductive semiconductor layer 123 is 300 nm or more, the electrostatic discharge characteristic of the light emitting device 100 is improved, and the light emission luminance of the light emitting device 100 increases as the concentration of holes increases. can do. On the other hand, when the thickness T ₁ of the second conductive semiconductor layer 123 is thicker than ₁ μm, the substrate may be distorted in the manufacturing process (170 of FIG. 2) or may take a long time in manufacturing. The thickness T ₁ of the semiconductor layer 123 is preferably 300 nm to 1 μm.

In addition, the second conductive semiconductor layer 123 includes a cavity corresponding to the protrusion 132 of the first electrode layer 130 described above, so that the protrusion 132 is inserted into the second conductive semiconductor layer 123. It can be done. Accordingly, mobility and diffusion efficiency of holes in the second conductive semiconductor layer 123 may be improved.

Meanwhile, the light emitting device 100 of FIG. 1 may include a protective layer 160 on the side surface of the light emitting structure 120. The protective layer 160 may be formed using an insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ).

2 to 6 illustrate a method of manufacturing the light emitting device of FIG. 1.

Referring to FIGS. 2 to 6, a method of manufacturing a light emitting device will be described. First, the light emitting structure 120 is formed on the substrate 170 as shown in FIG. 2.

The substrate 170 may be selected from the group consisting of sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, and GaAs, although not shown in the drawing, the substrate 170 and the light emitting structure A buffer layer (not shown) may be formed between the 120.

The buffer layer (not shown) may have a form in which Group 3 and Group 5 elements are combined, or may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and dopants may be doped.

An undoped semiconductor layer (not shown) may be formed on the substrate 170 or the buffer layer (not shown), and either or both of the buffer layer and the undoped semiconductor layer (not shown) may be formed. It may not be formed and is not limited to this structure.

The light emitting structure 120 may include at least a first conductive semiconductor layer 121, an active layer 122, and a second conductive semiconductor layer 123.

The first conductive semiconductor layer 121, the active layer 122, and the second conductive semiconductor layer 123 may be formed of metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), or plasma chemical vapor deposition (CVD). (PECVD; Plasma-Enhanced Chemical Vapor Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), Sputtering, etc. It does not limit to this.

On the other hand, the second conductive semiconductor layer 123 is formed to have a thickness (T ₁ ) of 300nm to 1㎛, it is possible to improve the concentration of the carrier in the active layer. Accordingly, the probability of recombination of holes and electrons may be increased, thereby improving light emission luminance of the light emitting device 100.

After the light emitting structure 120 is formed, as shown in FIG. 3, after the mask 180 having the opening 182 is formed on the second conductive semiconductor layer 123, the second conductive semiconductor layer 123 is positioned. At least one cavity 124 is formed. The formation of the cavity 124 may be by a method such as wet etching or dry etching. A plurality of cavities 124 may be formed, and in the case where a plurality of cavities 124 are formed, it is preferable to form holes at symmetrical positions as described above with reference to FIG. 1 for uniform diffusion of holes.

After the cavity 124 is formed, the insulating layer 133 is formed on the bottom surface of the cavity 124 as shown in FIG. 4, the mask 180 is removed, and the first electrode layer 130 is formed.

In this case, the first electrode layer 130 may be filled in the cavity 124. Accordingly, the first electrode layer 130 may be inserted into the second conductive semiconductor layer 123 to form holes in the second conductive semiconductor layer 123. It is possible to improve the mobility and diffusion efficiency of the. In addition, the insulating layer 133 may prevent clustering of currents on the protruding portion 132 so that the current in the second conductive semiconductor layer 123 may be more effectively diffused from side to side.

Subsequently, as shown in FIG. 5, after forming the supporting substrate 110 and the second electrode layer 140 on the first electrode layer 130, the substrate 170 is removed. In addition, a reflective layer (not shown) may be further formed between the first electrode layer 130 and the support substrate 110, and the support substrate 110 may be bonded by an adhesive layer (not shown), and an adhesive layer (not shown). ) May be formed of a high temperature polymer adhesive, or may include a barrier metal or a bonding metal.

Although not shown in the drawings, the support substrate 110 may include at least one hole (not shown), which may be formed before forming the second electrode layer 140. These holes (not shown) may have a bandgap of greater than 4.0 eV so that the support substrate 110 may be electrically connected to the second conductive semiconductor layer 123 and an external electrode (not shown) when the insulation is close to insulation. have. This will be described later with reference to FIG. 7.

When the supporting substrate 110 is formed, the above-described substrate 170 is removed. Herein, the substrate 170 may be removed by a physical or / and chemical method, and the physical method may be removed by, for example, a laser lift off (LLO) method. Although not shown, a buffer layer (not shown) disposed on the light emitting structure 120 may be removed after the substrate 170 is removed. In this case, the buffer layer (not shown) may be removed through a dry or wet etching method or a polishing process.

Next, as shown in FIG. 6, the concave-convex 150 may be formed on a part or the entire surface of the first conductive semiconductor layer 121 by a method such as photo electrochemical (PEC). The electrode pad 152 may be formed on the surface of the conductive semiconductor layer 121. In addition, after etching the outer region of the light emitting structure 120, the protective layer 160 may be formed.

7 is a cross-sectional view showing a cross section of a light emitting device according to the embodiment.

Hereinafter, detailed descriptions of the same components as those shown and described with reference to FIG. 1 will be omitted.

Referring to FIG. 7, the light emitting device 200 according to the embodiment is positioned on the support substrate 210, the first electrode layer 230 on the first surface of the support substrate 210, and the first electrode layer 230. The light emitting structure 220 includes the first conductive semiconductor layer 221, the second conductive semiconductor layer 223, and an active layer 222 between the first conductive semiconductor layer 221 and the second conductive semiconductor layer 223. It may include.

In the light emitting device 200 of FIG. 7, the second surface of the support substrate 210 is located opposite to the first surface of the support substrate 210 from the first surface where the support substrate 210 is in contact with the first electrode layer 230. One or more holes penetrating to the surface may be included, and a conductive layer 242 may be formed on at least an inner wall surface of the hole.

In addition, a second electrode layer 240 may be formed on the second surface of the support substrate 210. Thus, the first electrode layer 230 and the second electrode layer 240 can be electrically connected by the conductive layer 242. In other words, the second electrode layer 240 may extend to at least the inner wall of the hole to form the conductive layer 242, and may be connected to the first electrode layer 230.

Therefore, when the support substrate 210 has a bandgap exceeding 4.0 eV and is close to insulation, the second conductive semiconductor layer 223 and an external electrode (not shown) may be electrically connected.

8 is a cross-sectional view showing a cross section of a light emitting device package according to the embodiment.

Referring to FIG. 8, the light emitting device package 300 according to the embodiment includes a body 310 in which a cavity is formed, a light source unit 320 mounted on a bottom surface of the body 310, and an encapsulant 330 formed in a cavity. The encapsulant 330 may include the phosphor 340.

The body 310 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photo sensitive glass (PSG), polyamide 9T ), new geo-isotactic polystyrene (SPS), metal materials, sapphire (Al ₂ O _3), beryllium oxide (BeO), is a printed circuit board (PCB, printed circuit board), it may be formed of at least one of ceramic. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 310 may be formed with an inclined surface. The angle of reflection of the light emitted from the light source unit 320 may vary according to the angle of the inclined surface, thereby adjusting the directivity angle of the light emitted to the outside.

The shape of the cavity formed in the body 310 as viewed from above may be circular, rectangular, polygonal, elliptical, or the like, and in particular, may have a curved shape, but is not limited thereto.

The light source unit 320 may be mounted on the bottom surface of the body 310. For example, the light source unit 320 may be a light emitting device illustrated and described with reference to FIG. 1 or 7. The light emitting device may be, for example, a colored light emitting device emitting light of red, green, blue, white, or the like, or an ultraviolet (Ultra Violet) light emitting device emitting ultraviolet light, but is not limited thereto. In addition, one or more light emitting devices may be mounted.

As described above with reference to FIGS. 1 to 7, as the thickness of the second conductive semiconductor layer formed of the p-type semiconductor layer is 300 nm to 1 μm, the concentration of holes increases and the second conductive semiconductor layer The electrode layer is inserted into the inside, and the diffusion effect of the holes may be improved. Therefore, the probability of recombination of electrons and holes may increase to increase the luminance of light emission.

Meanwhile, the body 310 may include a first electrode 352 and a second electrode 354. The first electrode 352 and the second electrode 354 may be electrically connected to the light source 320 to supply power to the light source 320.

The first electrode 352 and the second electrode 354 are electrically separated from each other, and may reflect light generated from the light source unit 320 to increase light efficiency, and also externally generate heat generated from the light source unit 320. Can be discharged.

In FIG. 8, the light source unit 320 is installed on the second electrode 354, and the first electrode 352 is bonded with a wire, but is not limited thereto. The light source unit 320 and the first electrode 352 are not limited thereto. The second electrode 354 may be electrically connected by any one of a wire bonding method, a flip chip method, or a die bonding method.

The first electrode 352 and the second electrode 354 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum ( Ta, platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium ( Ge), hafnium (Hf), ruthenium (Ru), iron (Fe) may include one or more materials or alloys. In addition, the first electrode 352 and the second electrode 354 may be formed to have a single layer or a multi-layer structure, but is not limited thereto.

The encapsulant 330 may be filled in the cavity and may include the phosphor 340. The encapsulant 330 may be formed of transparent silicone, epoxy, and other resin materials, and may be formed by filling in a cavity and then ultraviolet or thermal curing.

The phosphor 340 may be selected according to the wavelength of the light emitted from the light source 320 so that the light emitting device package 300 may implement white light.

The phosphor 340 included in the encapsulant 330 may have a blue light emitting phosphor, a cyan light emitting phosphor, a green light emitting phosphor, a yellow green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, according to a wavelength of light emitted from the light source unit 320. One of an orange light emitting phosphor and a red light emitting phosphor may be applied.

That is, the phosphor 340 may be excited by the light having the first light emitted from the light source unit 320 to generate the second light. For example, when the light source unit 320 is a blue light emitting diode and the phosphor 340 is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light and blue light generated from the blue light emitting diode As the yellow light generated by excitation is mixed, the light emitting device package 300 may provide white light.

Similarly, when the light source unit 320 is a green light emitting diode, a magenta phosphor or a blue and red phosphor 340 is mixed. When the light source unit 320 is a red light emitting diode, a cyan phosphor or a blue and green phosphor is used. For example, the case of mixing.

The phosphor 340 may be a known one such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride, or phosphate.

A plurality of light emitting device packages 300 according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package 300.

The light emitting device package 300, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device 100 or the light emitting device package 300 described in the above embodiments, for example, the lighting system may be a lamp, a street lamp. It may include.

9A is a perspective view illustrating a lighting apparatus including a light emitting device module according to an embodiment, and FIG. 9B is a cross-sectional view illustrating a C-C 'cross section of the lighting apparatus of FIG. 4A.

That is, FIG. 9B is a cross-sectional view of the lighting apparatus 400 of FIG. 9A cut in the plane of the longitudinal direction Z and the height direction X, and viewed in the horizontal direction Y. FIG.

9A and 9B, the lighting device 400 may include a body 410, a cover 430 fastened to the body 410, and a closing cap 450 positioned at both ends of the body 410. have.

The lower surface of the body 410 is fastened to the light emitting device module 440, the body 410 is conductive and so that the heat generated from the light emitting device package 444 can be discharged to the outside through the upper surface of the body 410 The heat dissipation effect may be formed of an excellent metal material, but is not limited thereto.

In particular, the light emitting device package 444 includes a conductive semiconductor layer (not shown) having a thickness of 300 nm to 1 μm, and thus the emission luminance may increase as the concentration of holes is increased and the diffusion effect of the holes is improved. Therefore, the luminous efficiency of the light emitting device module 440 may be improved.

The light emitting device package 444 may be mounted on the substrate 442 in multiple colors and in multiple rows to form a module. The light emitting device package 444 may be mounted at the same interval or may be mounted at various separation distances as necessary to adjust brightness. As the substrate 442, a metal core PCB (MCPCB) or a PCB made of FR4 may be used.

The cover 430 may be formed in a circular shape to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 protects the light emitting device module 440 from the outside and the like. In addition, the cover 430 may include diffusing particles to prevent glare of the light generated from the light emitting device package 444 and to uniformly emit light to the outside, and may also include at least one of an inner surface and an outer surface of the cover 430. A prism pattern or the like may be formed on either side. In addition, a phosphor may be applied to at least one of an inner surface and an outer surface of the cover 430.

On the other hand, since the light generated from the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 should be excellent in the light transmittance, sufficient to withstand the heat generated in the light emitting device package 444 The cover 430 should be provided with heat resistance, and the cover 430 may include polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. It is preferably formed of a material.

Closing cap 450 is located at both ends of the body 410 may be used for sealing the power supply (not shown). In addition, the closing cap 450 is a power pin 452 is formed, the lighting device 400 according to the embodiment can be used immediately without a separate device to the terminal from which the existing fluorescent lamps are removed.

10 is an exploded perspective view of a liquid crystal display device including the optical sheet according to the embodiment.

10 is an edge-light method, and the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510.

The liquid crystal display panel 510 may display an image by using light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal interposed therebetween.

The color filter substrate 512 may implement colors of an image displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to the printed circuit board 518 on which a plurality of circuit components are mounted through the driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518.

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 may convert the light provided from the light emitting device module 520, the light emitting device module 520 into a surface light source, and provide the light guide plate 530 to the liquid crystal display panel 510. Reflective sheet for reflecting the light emitted from the rear of the light guide plate 530 and the plurality of films 550, 566, 564 to uniform the luminance distribution of the light provided from the 530 and improve the vertical incidence ( 540.

The light emitting device module 520 may include a PCB substrate 522 so that a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 may be mounted to form a module.

In particular, the light emitting device package 524 may include a conductive semiconductor layer (not shown) having a thickness of 300 nm to 1 μm, and thus, as the concentration of holes increases and the diffusion effect of holes improves, emission luminance may increase. Therefore, the backlight unit 570 can be implemented with improved luminous efficiency.

Meanwhile, the backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510, and a prism film 550 for condensing the diffused light to improve vertical incidence. ), And may include a protective film 564 to protect the prism film 550.

11 is an exploded perspective view of a liquid crystal display device including the optical sheet according to the embodiment. However, the parts shown and described in FIG. 10 will not be repeatedly described in detail.

11 is a direct view, the liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610.

Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 10, a detailed description thereof will be omitted.

The backlight unit 670 may include a plurality of light emitting device modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting device modules 623 and the reflective sheet 624 are accommodated, and an upper portion of the light emitting device module 623. It may include a diffusion plate 640 and a plurality of optical film 660 disposed in the.

LED Module 623 A plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 may be mounted to include a PCB substrate 621 to form a module.

In particular, the light emitting device package 622 includes a conductive semiconductor layer (not shown) having a thickness of 300 nm to 1 μm, and thus the emission luminance may increase as the concentration of the holes increases and the diffusion effect of the holes is improved. Therefore, the backlight unit 670 may be implemented with improved luminous efficiency.

The reflective sheet 624 reflects the light generated from the light emitting device package 622 in the direction in which the liquid crystal display panel 610 is positioned to improve light utilization efficiency.

On the other hand, the light generated from the light emitting device module 623 is incident on the diffusion plate 640, the optical film 660 is disposed on the diffusion plate 640. The optical film 660 includes a diffusion film 666, a prism film 650, and a protective film 664.

The configuration and the method of the embodiments described above are not limitedly applied, but the embodiments may be modified so that all or some of the embodiments are selectively combined so that various modifications can be made. .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

100, 200: light emitting element 110, 210: support substrate
120, 220 light emitting structures 121, 221: first conductive semiconductor layer
122, 222: active layers 123, 223: second conductive semiconductor layer
130 and 230: first electrode layer 140 and 240: second electrode layer
242: conductive layer

Claims (9)

Support substrate;
A first electrode layer on the first surface of the support substrate; And
And a light emitting structure on the first electrode layer, the light emitting structure including an first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer.
The second conductive semiconductor layer has a thickness of 300nm to 1㎛. The method of claim 1,
And the first electrode layer and the second conductive semiconductor layer contact each other, the first electrode layer includes at least one protrusion, and the second conductive semiconductor layer includes a cavity corresponding to the protrusion. The method of claim 2,
The protrusion is a light emitting device comprising an insulating layer at the end. The method of claim 1,
The second conductive semiconductor layer is a p-type semiconductor layer, the light emitting device doped with aluminum (Al). The method of claim 1,
The support substrate includes a second surface positioned opposite to the first surface of the support substrate, and includes at least one hole penetrating from the second surface of the support substrate to the first surface of the support substrate. The method of claim 5,
And a second electrode layer on a second surface of the support substrate, wherein the second electrode layer extends at least to an inner wall surface of the hole and connects with the first electrode layer. The method of claim 1,
The upper surface of the light emitting structure includes a light emitting device having an uneven structure. The method of claim 1,
Light emitting device comprising an electrode pad on the light emitting structure. The method of claim 1,
Light emitting device comprising a protective layer on the side of the light emitting structure.

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