CN102446833B - 一种降低双大马士革氮化硅工艺颗粒的处理方法 - Google Patents

一种降低双大马士革氮化硅工艺颗粒的处理方法 Download PDF

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CN102446833B
CN102446833B CN201110299091.XA CN201110299091A CN102446833B CN 102446833 B CN102446833 B CN 102446833B CN 201110299091 A CN201110299091 A CN 201110299091A CN 102446833 B CN102446833 B CN 102446833B
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顾梅梅
侯多源
许隽
王科
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Shanghai Huali Microelectronics Corp
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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Abstract

本发明公开一种降低双大马士革氮化硅工艺颗粒的处理方法，包括如下步骤：步骤A、在硅片上形成铜的种子层；步骤B、在所述铜的种子层上沉积覆盖一层铜的淀积层；步骤C、对铜的淀积层进行研磨；步骤D、将硅片送入反应腔室中，利用等离子条件下的NH3气体对铜的淀积层的表面进行预处理，以清除在所述铜的淀积层的表面所形成的铜的氧化物；步骤E、在反应腔室中，利用双大马士革氮化硅淀积工艺生成位于所述铜的淀积层上方的一层刻蚀阻挡层；步骤F、用NF3气体清洁反应腔室；步骤G、在反应腔室中通入N2O气体，用等离子条件下的N2O气体除去反应腔室中所残余的氢（H）和氟（F）。达到降低DDN工艺颗粒的效果，在铜制成工艺中有良好的应用前景。

Description

一种降低双大马士革氮化硅工艺颗粒的处理方法
技术领域
本发明涉及半导体制造领域一种降低双大马士革氮化硅工艺（DDN工艺）颗粒的处理方法，尤其涉及一种铜制程工艺中降低双大马士革氮化硅工艺颗粒的处理方法。
背景技术
双大马士革氮化硅工艺（DDN工艺）在制程上，主要以DDN/Oxide/DDN/Oxide/DDN的薄膜堆积层的形式，而DDN用于金属间介质层的大马士革结构的刻蚀阻挡层，普遍用于130nm，110nm的铜制程工艺。
针对AMAT Producer的CVD设备，由于DDN工艺在制成上会与底下金属铜（Cu）接触。 而金属铜（Cu）在空气中放置易在表面形成氧化铜（CuO）, 这层氧化铜（CuO）的存在会破坏铜（Cu）与DDN薄膜之间的黏附性，影响后段工艺集成的可靠性和良率，甚至会造成产品上的薄膜剥落，产品报废。同时，在第一层DDN工艺淀积之前在等离子环境下用氨气进行预处理（NH3 pre-treatment），一方面利用氢离子（H+）还原氧化铜（CuO）中的铜（Cu）去除CuO；另一方面，由于工艺腔室（chamber）的表面主要成分为三氧化二铝（Al2O3），氨气进行预处理（NH3 pre-treatment）本身残余的氢离子（H+）也会对主要成分为三氧化二铝（Al2O3）的工艺腔室表面，尤其是清洗头（ShowerHead）起到侵蚀作用，从而带来颗粒的聚集问题。此外，在利用NF3进行清洁过程中残余的氟离子（F-）也会对工艺腔室和清洗头表面起到侵蚀作用， 从而带来颗粒的聚集问题。这种对工艺腔室的侵蚀将减少清洗头的寿命，同时极大增加工艺腔室的保养频率。
发明内容
针对上述存在的问题，本发明的目的是提供一种在保证DDN工艺中有效去除氧化铜（CuO），同时又能降低工艺腔室表面，特别是清洗头表面存在的颗粒问题。
本发明的目的是通过下述技术方案实现的：
一种降低双大马士革氮化硅工艺颗粒的处理方法，其中，包括如下步骤：
步骤A、在硅片上形成铜的种子层；
步骤B、在所述铜的种子层上沉积覆盖一层铜的淀积层；
步骤C、对铜的淀积层进行研磨；
步骤D、将硅片送入反应腔室中，利用等离子条件下的NH3气体对铜的淀积层的表面进行预处理，以清除在所述铜的淀积层的表面所形成的铜的氧化物；
步骤E、在反应腔室中，利用双大马士革氮化硅淀积工艺生成位于所述铜的淀积层上方的一层刻蚀阻挡层；
步骤F、用NF3气体清洁反应腔室；
步骤G、在反应腔室中通入NO2气体，用等离子条件下的NO2气体除去反应腔室中所残余的氢和氟。
上述的降低双大马士革氮化硅工艺颗粒的处理方法，其中，等离子条件下，反应腔室内的气压为DDN薄膜工艺的淀积气压，气体喷头离硅片的距离为450~600mils，产生等离子体的射频的功率为0~2000W，N2O的气体流量为3000~7000sccm。
上述的方法，其中，在反应腔室中通入N2O气体的同时还通入有N2气体，且N2气体的流量为3000~7000sccm。
上述的方法，其中，还包括在刻蚀阻挡层上生长氧化层的步骤。
与已有技术相比，本发明的有益效果在于：操作简便，在保证有效去除氧化铜（CuO）从而确保铜（Cu）与DDN薄膜之间的黏附性，同时也达到抑制对工艺腔室表面，尤其是对清洗头的侵蚀问题，起到延长工艺腔室使用寿命、降低工艺腔室保养频率的作用。
附图说明
图1是本发明降低双大马士革氮化硅工艺颗粒的处理方法的工艺流程示意图。
具体实施方式
基于化学汽相沉积CVD而提出本发明，下面结合原理图和具体操作实施例对本发明作进一步说明。
如图1所示，在硅片上利用例如溅射的方法（Sputter）形成铜的种子层，再在种子层上面沉积金属铜，进而形成铜的淀积层，接着利用化学机械研磨CMP工艺将铜的淀积层进行平坦化处理，然后将硅片送入化学汽相沉积的应腔室中，在等离子环境条件下用NH3气体的等离子体对铜的淀积层的表面进行预处理，主要是利用Plasma环境中的H，还原CuO中的Cu，达到去除铜的淀积层表面的CuO的目的，以保障铜与后续DDN薄膜之间的黏附性。此过程利用氢离子（H+）还原氧化铜（CuO）中的铜（Cu）去除氧化铜（CuO）是形成双大马士革氮化硅淀积层（DDN）的基础，并且在后续双大马士革氮化硅淀积工艺中，所形成的DDN薄膜其实就是沉积一层位于所述铜的淀积层上方的一层氮化硅刻蚀阻挡层。之后用射频或微波激活NF3电浆并将其通入至CVD工艺腔室中以形成等离子环境，从而利用产生的活性的中性氟与工艺腔室内的残余物（如SiO2等）进行反应并形成挥发性蚀刻产物（例如 SiF4），这些挥发性物可以被抽离到CVD反应腔外，从而完成对反应腔室的清洁。工艺腔室的表面，尤其是清洗头（ShowerHead）的表面的材质在正常情形下主要成分为Al2O3。一个不利的因素是，由于采用NH3进行预处理的过程中所残余的氢离子（H+）和采用NF3进行清洁过程中所残余的氟离子（F-）均容易与Al2O3发生化学反应，造成工艺腔室的腐蚀，尤其是清洗头的腐蚀，这种腐蚀物通常呈现为白色的颗粒。此时在工艺腔室中通入N2O，并保障工艺腔室中的气压为DDN薄膜工艺的淀积气压，利用射频以在工艺腔室中形成N2O气体的等离子体。因为工艺腔室中硅片通常置于加热台之上，可以设置气体喷头到加热台的距离（Heater Spacing）为450~600mils，此时可以认为气体喷头离硅片的距离大致为450~600mils。产生N2O气体的等离子体的射频的功率优选为0~2000W，且在工艺腔室中通入的N2O的气体流量为3000~7000sccm, 同时通入的N2的气体的流量为3000~7000sccm。在RF Power 下，在chamber里形成plasma的环境，在等离子环境中，N2O气体在分解出氧离子（O-、O2 -），氧离子会通过反应去除与残余的氢离子（例如O2 + 2H+-产生H2O），同时取代吸附在工艺腔室壁上的氟离子（阻止F-进一步侵蚀Al2O3）。
经上述处理之后，即可消除前述反应腔室的内壁或气体喷头产生颗粒的问题。之后可以在刻蚀阻挡层上生长氧化层，并实施后续的标准的大马士革结构制造工艺，以完成大马士革结构制造的后续制备。
本领域的技术人员都知道，本发明中所提及的CVD的反应腔室(chamber)或气体喷头（ShowerHead）的表面的主要成分是Al2O3，而前述工序所残留的氢（H）或氟（F）则会对Al2O3表面有侵蚀作用，而本发明正是利用等离子环境下的N2O的等离子体去除残余的氢和氟，在保证DDN工艺能有效去除CuO的同时，还能极大地降低工艺中由于侵蚀Al2O3而导致的chamber内的颗粒问题。另外，CVD机台停滞一段时间之后，如果CVD机台需要再次运行进行正常生产，必须在运行之前做陈化处理（Seasoning）动作 ，也即让机台先预热好并达到稳定的工艺状态，以避免同一批次的硅片前后出现差异。那么在CVD机台的清洗流程中，在反应腔室中通入N2O气体可以选择在完成NF3 清洗之后而在执行seasoning动作之前。
以上对本发明的具体实施例进行了详细描述，但本发明并不限制于以上描述的具体实施例，其只是作为范例。对于本领域技术人员而言，任何对该发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作出的均等变换和修改，都应涵盖在本发明的范围内。

Claims (4)

1.一种降低双大马士革氮化硅工艺颗粒的处理方法，其特征在于，包括如下步骤：
步骤A、在硅片上形成铜的种子层；
步骤B、在所述铜的种子层上沉积覆盖一层铜的淀积层；
步骤C、对铜的淀积层进行研磨；
步骤D、将硅片送入反应腔室中，利用等离子条件下的NH3气体对铜的淀积层的表面进行预处理，以清除在所述铜的淀积层的表面所形成的铜的氧化物；
步骤E、在反应腔室中，利用双大马士革氮化硅淀积工艺生成位于所述铜的淀积层上方的一层刻蚀阻挡层；
步骤F、用NF3气体清洁反应腔室；
步骤G、在反应腔室中通入N2O气体，用等离子条件下的N2O气体除去反应腔室中所残余的氢和氟，以避免反应腔室中残余的氢和氟与腔室内壁的Al2O3反应形成颗粒。
2.根据权利要求1所述的降低双大马士革氮化硅工艺颗粒的处理方法，其特征在于，等离子条件下，反应腔室内的气压为DDN薄膜工艺的淀积气压，气体喷头离硅片的距离为450～600mils，产生等离子体的射频的功率为0～2000W，N2O的气体流量为3000～7000sccm。
3.根据权利要求2所述的方法，其特征在于，在反应腔室中通入N2O气体的同时还通入有N2气体，且N2气体的流量为3000～7000sccm。
4.根据权利要求1所述的方法，其特征在于，还包括在刻蚀阻挡层上生长氧化层的步骤。
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