CN102428567B - 在硅片正面上形成栅极的方法 - Google Patents

在硅片正面上形成栅极的方法 Download PDF

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Publication number
CN102428567B
CN102428567B CN201080022316.0A CN201080022316A CN102428567B CN 102428567 B CN102428567 B CN 102428567B CN 201080022316 A CN201080022316 A CN 201080022316A CN 102428567 B CN102428567 B CN 102428567B
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China
Prior art keywords
metal paste
weight
paste
silver
finger
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CN201080022316.0A
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Chinese (zh)
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CN102428567A (zh
Inventor
R·D·安德森
K·W·杭
高世铭
G·劳迪辛奥
林政男
吴隽夔
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Sun Paster Co ltd
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EI Du Pont de Nemours and Co
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN201080022316.0A 2009-05-20 2010-05-20 在硅片正面上形成栅极的方法 Active CN102428567B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17988509P 2009-05-20 2009-05-20
US61/179,885 2009-05-20
PCT/US2010/035522 WO2010135496A1 (en) 2009-05-20 2010-05-20 Process of forming a grid electrode on the front-side of a silicon wafer

Publications (2)

Publication Number Publication Date
CN102428567A CN102428567A (zh) 2012-04-25
CN102428567B true CN102428567B (zh) 2015-01-07

Family

ID=42271964

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080022316.0A Active CN102428567B (zh) 2009-05-20 2010-05-20 在硅片正面上形成栅极的方法

Country Status (7)

Country Link
US (2) US8486826B2 (OSRAM)
EP (1) EP2433304A1 (OSRAM)
JP (1) JP5898065B2 (OSRAM)
KR (1) KR101322072B1 (OSRAM)
CN (1) CN102428567B (OSRAM)
TW (1) TWI504011B (OSRAM)
WO (1) WO2010135496A1 (OSRAM)

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KR20120007517A (ko) * 2009-03-30 2012-01-20 이 아이 듀폰 디 네모아 앤드 캄파니 금속 페이스트 및 규소 태양 전지의 제조시의 그 용도
US8486826B2 (en) * 2009-05-20 2013-07-16 E I Du Pont De Nemours And Company Process of forming a grid electrode on the front-side of a silicon wafer
CN102479883A (zh) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 太阳电池正面电极的形成方法
US20110240124A1 (en) * 2010-03-30 2011-10-06 E.I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of silicon solar cells
CA2822592A1 (en) * 2010-12-24 2012-06-28 Shin-Etsu Chemical Co., Ltd. Method for manufacturing solar cell element and solar cell element
AU2012245628B2 (en) 2011-04-18 2016-09-22 Diamir, Llc Methods of using miRNA from bodily fluids for early detection and monitoring of Mild Cognitive Impairment (MCI) and Alzheimer's Disease (AD)
JP6027171B2 (ja) * 2011-07-04 2016-11-16 株式会社日立製作所 封着用ガラスフリット、封着用ガラスペースト、導電性ガラスペースト、およびそれらを利用した電気電子部品
CN103165689B (zh) * 2011-12-12 2015-10-28 茂迪股份有限公司 太阳能电池及其制造方法
JP5583196B2 (ja) * 2011-12-21 2014-09-03 パナソニック株式会社 薄膜太陽電池およびその製造方法
CN103171260A (zh) * 2011-12-23 2013-06-26 昆山允升吉光电科技有限公司 一种太阳能电池电极的配套网板及其印刷方法
JP2015523707A (ja) * 2012-04-18 2015-08-13 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 太陽電池接点の印刷方法
KR101396444B1 (ko) * 2013-05-06 2014-05-22 한화케미칼 주식회사 태양전지의 전극의 제조방법 및 이를 이용한 태양전지
TW201511300A (zh) * 2013-09-11 2015-03-16 Inst Nuclear Energy Res Atomic Energy Council 具有摻雜矽或硼原子之鋁金屬電極之製備方法
KR20150035189A (ko) 2013-09-27 2015-04-06 엘지전자 주식회사 태양 전지
KR101859017B1 (ko) * 2015-12-02 2018-05-17 삼성에스디아이 주식회사 전극 형성 방법, 이로부터 제조된 전극 및 태양 전지
CN105590663B (zh) * 2016-01-07 2017-09-22 清华大学 无铅无铋导电银浆、银栅线的制备方法及硅太阳能电池
JP6810986B2 (ja) * 2016-07-14 2021-01-13 アートビーム株式会社 太陽電池および太陽電池の製造方法
WO2018174898A1 (en) 2017-03-24 2018-09-27 Heraeus Precious Metals North America Conshohocken Llc Low etching and non-contact glasses for electroconductive paste compositions
CN108110087B (zh) * 2017-12-20 2019-12-17 江苏日托光伏科技股份有限公司 一种低线宽mwt硅太阳能电池的制备方法
US20190280133A1 (en) 2018-03-09 2019-09-12 Heraeus Precious Metals North America Conshohocken Llc Seed layer for improved contact on a silicon wafer
KR102576589B1 (ko) * 2018-09-05 2023-09-08 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이를 포함하는 태양 전지 패널
CN109539604B (zh) * 2019-01-17 2020-05-29 河北道荣新能源科技有限公司 薄膜光伏发电耦合选择性吸收涂层结构
CN109631353B (zh) * 2019-01-17 2020-05-08 河北道荣新能源科技有限公司 薄膜光伏发电耦合选择性吸收涂层制法及其集热管制法
US20210257505A1 (en) * 2020-02-18 2021-08-19 Dupont Electronics, Inc. Solar cell and method for manufacturing the same
JP2021022735A (ja) * 2020-09-21 2021-02-18 アートビーム株式会社 太陽電池および太陽電池の製造方法
CN120224824A (zh) * 2023-10-08 2025-06-27 西安隆基乐叶光伏科技有限公司 一种太阳能电池的制作方法、太阳能电池和电池串

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US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
US20060231800A1 (en) * 2005-04-14 2006-10-19 Yueli Wang Method of manufacture of semiconductor device and conductive compositions used therein
WO2008026415A1 (fr) * 2006-08-31 2008-03-06 Shin-Etsu Handotai Co., Ltd. Procédé permettant de former un substrat semi-conducteur et une électrode et procédé de fabrication d'une batterie solaire
WO2008078771A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation 太陽電池素子及び太陽電池素子の製造方法

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KR900702573A (ko) 1988-06-10 1990-12-07 버나드 엠. 길레스피에 개량된 태양전지용 접촉구의 제조방법
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
JP4121928B2 (ja) * 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
JP5629210B2 (ja) 2007-08-31 2014-11-19 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 太陽電池用層状コンタクト構造
TW200926210A (en) * 2007-09-27 2009-06-16 Murata Manufacturing Co Ag electrode paste, solar battery cell, and process for producing the solar battery cell
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JP2009193993A (ja) * 2008-02-12 2009-08-27 Mitsubishi Electric Corp 太陽電池電極の製造方法および太陽電池電極
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US8486826B2 (en) * 2009-05-20 2013-07-16 E I Du Pont De Nemours And Company Process of forming a grid electrode on the front-side of a silicon wafer

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
US20060231800A1 (en) * 2005-04-14 2006-10-19 Yueli Wang Method of manufacture of semiconductor device and conductive compositions used therein
WO2008026415A1 (fr) * 2006-08-31 2008-03-06 Shin-Etsu Handotai Co., Ltd. Procédé permettant de former un substrat semi-conducteur et une électrode et procédé de fabrication d'une batterie solaire
WO2008078771A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation 太陽電池素子及び太陽電池素子の製造方法

Also Published As

Publication number Publication date
KR20120012989A (ko) 2012-02-13
US8486826B2 (en) 2013-07-16
US20130276881A1 (en) 2013-10-24
EP2433304A1 (en) 2012-03-28
JP5898065B2 (ja) 2016-04-06
KR101322072B1 (ko) 2013-10-28
TW201110398A (en) 2011-03-16
JP2012527780A (ja) 2012-11-08
TWI504011B (zh) 2015-10-11
US9054239B2 (en) 2015-06-09
US20100294359A1 (en) 2010-11-25
WO2010135496A1 (en) 2010-11-25
CN102428567A (zh) 2012-04-25

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20201229

Address after: Delaware, USA

Patentee after: DuPont Electronics

Address before: Delaware, USA

Patentee before: E.I. Nemours DuPont

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210425

Address after: Delaware, USA

Patentee after: Sun paster Co.,Ltd.

Address before: Delaware, USA

Patentee before: DuPont Electronics

TR01 Transfer of patent right
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20120425

Assignee: Jiangsu SOTE Electronic Material Co.,Ltd.

Assignor: Sun paster Co.,Ltd.

Contract record no.: X2021990000521

Denomination of invention: Method of forming gate on front surface of silicon wafer

Granted publication date: 20150107

License type: Common License

Record date: 20210826

EE01 Entry into force of recordation of patent licensing contract