CN102428566A - 在硅片正面上形成栅极的方法 - Google Patents

在硅片正面上形成栅极的方法 Download PDF

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Publication number
CN102428566A
CN102428566A CN2010800223103A CN201080022310A CN102428566A CN 102428566 A CN102428566 A CN 102428566A CN 2010800223103 A CN2010800223103 A CN 2010800223103A CN 201080022310 A CN201080022310 A CN 201080022310A CN 102428566 A CN102428566 A CN 102428566A
Authority
CN
China
Prior art keywords
metal paste
paste
silver
aforementioned
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800223103A
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English (en)
Chinese (zh)
Inventor
D·K·安德森
R·D·安德森
G·劳迪辛奥
林政男
高世铭
吴隽夔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN102428566A publication Critical patent/CN102428566A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
CN2010800223103A 2009-05-20 2010-05-20 在硅片正面上形成栅极的方法 Pending CN102428566A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17988609P 2009-05-20 2009-05-20
US61/179,886 2009-05-20
PCT/US2010/035528 WO2010135500A1 (en) 2009-05-20 2010-05-20 Process of forming a grid electrode on the front-side of a silicon wafer

Publications (1)

Publication Number Publication Date
CN102428566A true CN102428566A (zh) 2012-04-25

Family

ID=42271965

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800223103A Pending CN102428566A (zh) 2009-05-20 2010-05-20 在硅片正面上形成栅极的方法

Country Status (7)

Country Link
US (1) US20100294360A1 (enExample)
EP (1) EP2433305A1 (enExample)
JP (1) JP2012527781A (enExample)
KR (1) KR101322149B1 (enExample)
CN (1) CN102428566A (enExample)
TW (1) TWI504001B (enExample)
WO (1) WO2010135500A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106537516A (zh) * 2014-07-21 2017-03-22 太阳化学公司 含有有机铋化合物的银糊料和其在太阳能电池中的应用

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102479883A (zh) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 太阳电池正面电极的形成方法
KR20120140026A (ko) * 2011-06-20 2012-12-28 엘지전자 주식회사 태양전지
DE102011056632A1 (de) * 2011-12-19 2013-06-20 Schott Solar Ag Verfahren zum Ausbilden einer Frontseitenmetallisierung einer Solarzelle sowie Solarzelle
CN103171260A (zh) * 2011-12-23 2013-06-26 昆山允升吉光电科技有限公司 一种太阳能电池电极的配套网板及其印刷方法
CN103192598A (zh) * 2012-01-09 2013-07-10 昆山允升吉光电科技有限公司 一种增加太阳能电池电极栅线高度的网板
EP2839510A4 (en) * 2012-04-18 2015-12-02 Heraeus Precious Metals North America Conshohocken Llc PROCESS FOR PRINTING SOLAR CELL CONTACTS
TWI500169B (zh) * 2013-02-22 2015-09-11 A solar type solar cell with a high efficiency current collecting structure and a converging type solar cell module

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989012321A1 (en) * 1988-06-10 1989-12-14 Mobil Solar Energy Corporation An improved method of fabricating contacts for solar cells
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
WO2008078771A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation 太陽電池素子及び太陽電池素子の製造方法
EP2058865A1 (en) * 2006-08-31 2009-05-13 Shin-Etsu Handotai Co., Ltd Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4004114B2 (ja) * 1997-09-26 2007-11-07 三洋電機株式会社 太陽電池素子の製造方法及び太陽電池素子
JP4121928B2 (ja) * 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
CN102593243A (zh) 2007-08-31 2012-07-18 费罗公司 用于太阳能电池的分层触点结构
TW200926210A (en) * 2007-09-27 2009-06-16 Murata Manufacturing Co Ag electrode paste, solar battery cell, and process for producing the solar battery cell
US7485245B1 (en) * 2007-10-18 2009-02-03 E.I. Du Pont De Nemours And Company Electrode paste for solar cell and solar cell electrode using the paste
US8759144B2 (en) * 2007-11-02 2014-06-24 Alliance For Sustainable Energy, Llc Fabrication of contacts for silicon solar cells including printing burn through layers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989012321A1 (en) * 1988-06-10 1989-12-14 Mobil Solar Energy Corporation An improved method of fabricating contacts for solar cells
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
EP2058865A1 (en) * 2006-08-31 2009-05-13 Shin-Etsu Handotai Co., Ltd Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery
WO2008078771A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation 太陽電池素子及び太陽電池素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106537516A (zh) * 2014-07-21 2017-03-22 太阳化学公司 含有有机铋化合物的银糊料和其在太阳能电池中的应用

Also Published As

Publication number Publication date
JP2012527781A (ja) 2012-11-08
TWI504001B (zh) 2015-10-11
KR101322149B1 (ko) 2013-10-28
WO2010135500A1 (en) 2010-11-25
US20100294360A1 (en) 2010-11-25
EP2433305A1 (en) 2012-03-28
TW201110377A (en) 2011-03-16
KR20120011891A (ko) 2012-02-08

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120425