JP2012527781A - シリコンウエハの前面にグリッド電極を形成する方法 - Google Patents

シリコンウエハの前面にグリッド電極を形成する方法 Download PDF

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Publication number
JP2012527781A
JP2012527781A JP2012512019A JP2012512019A JP2012527781A JP 2012527781 A JP2012527781 A JP 2012527781A JP 2012512019 A JP2012512019 A JP 2012512019A JP 2012512019 A JP2012512019 A JP 2012512019A JP 2012527781 A JP2012527781 A JP 2012527781A
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Japan
Prior art keywords
metal paste
finger lines
inorganic
printed
paste
Prior art date
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Pending
Application number
JP2012512019A
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English (en)
Japanese (ja)
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JP2012527781A5 (enExample
Inventor
ケント アンダーソン デイビッド
デイビッド アンダーソン ラッセル
ラウディジオ ジョヴァンナ
チェン−ナン リン
シン−ミン カオ
チュン−クウェイ ウー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2012527781A publication Critical patent/JP2012527781A/ja
Publication of JP2012527781A5 publication Critical patent/JP2012527781A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
JP2012512019A 2009-05-20 2010-05-20 シリコンウエハの前面にグリッド電極を形成する方法 Pending JP2012527781A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17988609P 2009-05-20 2009-05-20
US61/179,886 2009-05-20
PCT/US2010/035528 WO2010135500A1 (en) 2009-05-20 2010-05-20 Process of forming a grid electrode on the front-side of a silicon wafer

Publications (2)

Publication Number Publication Date
JP2012527781A true JP2012527781A (ja) 2012-11-08
JP2012527781A5 JP2012527781A5 (enExample) 2013-07-04

Family

ID=42271965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012512019A Pending JP2012527781A (ja) 2009-05-20 2010-05-20 シリコンウエハの前面にグリッド電極を形成する方法

Country Status (7)

Country Link
US (1) US20100294360A1 (enExample)
EP (1) EP2433305A1 (enExample)
JP (1) JP2012527781A (enExample)
KR (1) KR101322149B1 (enExample)
CN (1) CN102428566A (enExample)
TW (1) TWI504001B (enExample)
WO (1) WO2010135500A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102479883A (zh) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 太阳电池正面电极的形成方法
KR20120140026A (ko) * 2011-06-20 2012-12-28 엘지전자 주식회사 태양전지
DE102011056632A1 (de) * 2011-12-19 2013-06-20 Schott Solar Ag Verfahren zum Ausbilden einer Frontseitenmetallisierung einer Solarzelle sowie Solarzelle
CN103171260A (zh) * 2011-12-23 2013-06-26 昆山允升吉光电科技有限公司 一种太阳能电池电极的配套网板及其印刷方法
CN103192598A (zh) * 2012-01-09 2013-07-10 昆山允升吉光电科技有限公司 一种增加太阳能电池电极栅线高度的网板
KR20150000486A (ko) * 2012-04-18 2015-01-02 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 태양전지 접촉부의 인쇄 방법
TWI500169B (zh) * 2013-02-22 2015-09-11 A solar type solar cell with a high efficiency current collecting structure and a converging type solar cell module
US20170141249A1 (en) * 2014-07-21 2017-05-18 Sun Chemical Corporation A silver paste containing organobismuth compounds and its use in solar cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008026415A1 (fr) * 2006-08-31 2008-03-06 Shin-Etsu Handotai Co., Ltd. Procédé permettant de former un substrat semi-conducteur et une électrode et procédé de fabrication d'une batterie solaire
WO2009041182A1 (ja) * 2007-09-27 2009-04-02 Murata Manufacturing Co., Ltd. Ａｇ電極ペースト、太陽電池セルおよびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU626895B2 (en) * 1988-06-10 1992-08-13 Ase Americas, Inc. An improved method of fabricating contacts for solar cells
DE69224965T2 (de) * 1991-06-11 1998-10-29 Ase Americas Inc Verbesserte solarzelle und verfahren zu ihrer herstellung
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
JP4004114B2 (ja) * 1997-09-26 2007-11-07 三洋電機株式会社 太陽電池素子の製造方法及び太陽電池素子
JP4121928B2 (ja) * 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
EP2104147B1 (en) * 2006-12-26 2015-04-15 Kyocera Corporation Solar cell element and solar cell element manufacturing method
US8236598B2 (en) * 2007-08-31 2012-08-07 Ferro Corporation Layered contact structure for solar cells
US7485245B1 (en) * 2007-10-18 2009-02-03 E.I. Du Pont De Nemours And Company Electrode paste for solar cell and solar cell electrode using the paste
WO2009059302A1 (en) * 2007-11-02 2009-05-07 Alliance For Sustainable Energy, Llc Fabrication of contacts for silicon solar cells including printing burn through layers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008026415A1 (fr) * 2006-08-31 2008-03-06 Shin-Etsu Handotai Co., Ltd. Procédé permettant de former un substrat semi-conducteur et une électrode et procédé de fabrication d'une batterie solaire
WO2009041182A1 (ja) * 2007-09-27 2009-04-02 Murata Manufacturing Co., Ltd. Ａｇ電極ペースト、太陽電池セルおよびその製造方法

Also Published As

Publication number Publication date
KR20120011891A (ko) 2012-02-08
TWI504001B (zh) 2015-10-11
WO2010135500A1 (en) 2010-11-25
TW201110377A (en) 2011-03-16
EP2433305A1 (en) 2012-03-28
KR101322149B1 (ko) 2013-10-28
US20100294360A1 (en) 2010-11-25
CN102428566A (zh) 2012-04-25

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