CN102420129A - Method for preventing photoresist holes from forming on metal layer - Google Patents
Method for preventing photoresist holes from forming on metal layer Download PDFInfo
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- CN102420129A CN102420129A CN2011103012609A CN201110301260A CN102420129A CN 102420129 A CN102420129 A CN 102420129A CN 2011103012609 A CN2011103012609 A CN 2011103012609A CN 201110301260 A CN201110301260 A CN 201110301260A CN 102420129 A CN102420129 A CN 102420129A
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- metal level
- photoresist
- metal layer
- substrate
- antireflective coating
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Abstract
The invention provides a method for preventing photoresist holes from forming on a metal layer, which comprises the steps that: a substrate is provided, and the metal layer is formed on the substrate; a layer of adhesive agents is coated on the metal layer; a bottom anti-reflecting coating is formed on the adhesive agents and is tightly attached on the metal layer; and photoresist is formed on the bottom anti-reflecting coating. The method for preventing the photoresist holes from forming on the metal layer has the advantages that one layer of adhesive agents is coated on the metal layer so that the adhesiveness between the bottom anti-reflecting coating and the metal layer is enhanced, so the bottom anti-reflecting coating is uniformly coated, the photoresist formed on the bottom anti-reflecting coating cannot generate holes, and the process quality is finally ensured.
Description
Technical field
The present invention relates to field of IC technique, relate in particular to a kind of method that prevents on metal level, to form the photoresist hole.
Background technology
In the production process of semiconductor device such as very lagre scale integrated circuit (VLSIC), photoetching is one of most crucial steps.The zone of the pattern (pattern) of each layer film of the structurally associated of every and MOS element and mix (doping) all determines with photoetching method.
Raising along with integration density on the chip; Day by day the strict circuit design specification and the maximum bottleneck that technological requirement met with of reduction process size are how to obtain high density and high integration; The wavelength that shorten the light source that is used to make public this moment can obtain fine pattern; The light source that is used to make public is a DUV, because the characteristic dimension of logic and storage chip dwindles, it is strict more that critical dimension (CD) tolerance becomes.The variation of CD is directly related with the reflection of substrate; The standing wave effect that DUV produces causes uneven substrate reflection; It will further cause the local of photoresist layer exposure energy different; In order to weaken this reflection effectively, on substrate or photoresist bed boundary, form bottom antireflective coating (BARC), bottom antireflective coating can prevent that light from passing through to reflect in substrate interface behind the photoresist; Can interfere with incident light because return the reflection ray of photoresist, cause the photoresist can not uniform exposure.
Yet behind the metal level that forms on the said substrate such as the TiN layer; On metal level, form bottom antireflective coating; Because TiN and bottom antireflective coating have the hydrophily that differs greatly; Therefore, the bottom antireflective coating that is formed on the TiN layer comes off from the TiN layer easily, so that makes the photoresist can not uniform exposure owing to lacking bottom antireflective coating.
Summary of the invention
Technical problem to be solved by this invention has provided a kind of method that prevents on metal level, to form the photoresist hole, to solve the problem that bottom antireflective coating comes off from metal level easily.
In order to solve the problems of the technologies described above, technical scheme of the present invention is: a kind of method that prevents on metal level, to form the photoresist hole is provided, has comprised: a substrate is provided, on said substrate, forms a metal level; On said metal level, apply one deck adhesive agent; On said adhesive agent, form a bottom antireflective coating, make said bottom antireflective coating close attachment on said metal level; On said bottom antireflective coating, form photoresist.
Further, said adhesive agent is HMDS (HMDS).
Further, the time of the said adhesive agent of coating is 32 seconds～40 seconds on said metal level.
Further, said metal level is a titanium nitride layer.
Further, said photoresist is the DUV photoetching compositions.
Further, between said substrate and said metal level, be formed with the substrate oxide layer.
The method that prevents on metal level, to form the photoresist hole provided by the invention; Be utilized in and apply one deck adhesive agent on the metal level; Adhesiveness between bottom antireflective coating and the metal level is strengthened; Thereby bottom antireflective coating is applied evenly, do not cause the photoresist that is formed on the bottom antireflective coating to produce hole, finally guaranteed processing quality.
Description of drawings
Fig. 1 is the flow chart of steps that prevents on metal level, to form the method for photoresist hole that the embodiment of the invention provides.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment a kind of method that on metal level, forms the photoresist hole that prevents that the present invention proposes is done further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only is used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is; A kind of method that prevents on metal level, to form the photoresist hole is provided; Be utilized in and apply one deck adhesive agent on the metal level, the adhesiveness between bottom antireflective coating and the metal level is strengthened, thereby bottom antireflective coating is applied evenly; Do not cause the photoresist that is formed on the bottom antireflective coating to produce hole, finally guaranteed processing quality.
Fig. 1 is the flow chart of steps that prevents on metal level, to form the method for photoresist hole that the embodiment of the invention provides.With reference to Fig. 1, a kind of method that prevents on metal level, to form the photoresist hole is provided, comprising:
S11, a substrate is provided, on said substrate, forms a metal level;
S12, on said metal level, apply one deck adhesive agent;
S13, on said adhesive agent, form a bottom antireflective coating, make said bottom antireflective coating close attachment on said metal level;
S14, on said bottom antireflective coating, form photoresist.
Further, said adhesive agent is a HMDS, and the time that on said metal level, applies said adhesive agent is 32 seconds～40 seconds.Will be understood by those skilled in the art that said adhesive agent not only is limited as HMDS (HMDS), can also be that other have the adhering organic substance between similar effect enhancing bottom antireflective coating and the metal level.Between bottom reflection coating and metal level, apply HMDS; Adhesiveness between bottom antireflective coating and the metal level is strengthened; Thereby bottom antireflective coating is applied evenly, do not cause the photoresist that is formed on the bottom antireflective coating to produce hole, finally guaranteed processing quality.
In the present embodiment, said metal level is titanium nitride (TiN) layer, and said photoresist is the DUV photoetching compositions.Between said substrate and said metal level, be formed with the substrate oxide layer, in the present embodiment, said substrate is a silicon substrate, between silicon substrate and TiN layer, is formed with silicon dioxide layer.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (6)
1. a method that prevents on metal level, to form the photoresist hole is characterized in that, comprising:
One substrate is provided, on said substrate, forms a metal level;
On said metal level, apply one deck adhesive agent;
On said adhesive agent, form a bottom antireflective coating, make said bottom antireflective coating close attachment on said metal level;
On said bottom antireflective coating, form photoresist.
2. the method that prevents on metal level, to form the photoresist hole according to claim 1 is characterized in that said adhesive agent is a HMDS.
3. the method that prevents on metal level, to form the photoresist hole according to claim 1 is characterized in that, the time that on said metal level, applies said adhesive agent is 32 seconds～40 seconds.
4. the method that prevents on metal level, to form the photoresist hole according to claim 1 is characterized in that said metal level is a titanium nitride layer.
5. the method that prevents on metal level, to form the photoresist hole according to claim 1 is characterized in that said photoresist is the DUV photoetching compositions.
6. the method that prevents on metal level, to form the photoresist hole according to claim 1 is characterized in that, between said substrate and said metal level, is formed with the substrate oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103012609A CN102420129A (en) | 2011-09-28 | 2011-09-28 | Method for preventing photoresist holes from forming on metal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103012609A CN102420129A (en) | 2011-09-28 | 2011-09-28 | Method for preventing photoresist holes from forming on metal layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102420129A true CN102420129A (en) | 2012-04-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103012609A Pending CN102420129A (en) | 2011-09-28 | 2011-09-28 | Method for preventing photoresist holes from forming on metal layer |
Country Status (1)
| Country | Link |
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| CN (1) | CN102420129A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782420A (en) * | 2021-08-05 | 2021-12-10 | 华虹半导体(无锡)有限公司 | Wafer processing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1166798A (en) * | 1994-11-22 | 1997-12-03 | 配合液系统公司 | Non-aminic photoresist adhesion promoters for microelectronic applications |
| CN101625968A (en) * | 2009-08-04 | 2010-01-13 | 上海集成电路研发中心有限公司 | Method for improving wet etching performance |
| CN101645415A (en) * | 2009-06-24 | 2010-02-10 | 上海宏力半导体制造有限公司 | Method for manufacturing metal connecting line |
-
2011
- 2011-09-28 CN CN2011103012609A patent/CN102420129A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1166798A (en) * | 1994-11-22 | 1997-12-03 | 配合液系统公司 | Non-aminic photoresist adhesion promoters for microelectronic applications |
| US5702767A (en) * | 1994-11-22 | 1997-12-30 | Complex Fluid Systems, Inc. | Non-Aminic photoresist adhesion promoters for microelectronic applications |
| CN101645415A (en) * | 2009-06-24 | 2010-02-10 | 上海宏力半导体制造有限公司 | Method for manufacturing metal connecting line |
| CN101625968A (en) * | 2009-08-04 | 2010-01-13 | 上海集成电路研发中心有限公司 | Method for improving wet etching performance |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782420A (en) * | 2021-08-05 | 2021-12-10 | 华虹半导体(无锡)有限公司 | Wafer processing method |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140509 |
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Effective date of registration: 20140509 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120418 |
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| RJ01 | Rejection of invention patent application after publication |