CN113782420A - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
- Publication number
- CN113782420A CN113782420A CN202110905617.8A CN202110905617A CN113782420A CN 113782420 A CN113782420 A CN 113782420A CN 202110905617 A CN202110905617 A CN 202110905617A CN 113782420 A CN113782420 A CN 113782420A
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- Prior art keywords
- wafer
- silicon nitride
- nitride film
- vertical furnace
- loading area
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- 238000003672 processing method Methods 0.000 title abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 46
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 26
- 235000012431 wafers Nutrition 0.000 claims description 54
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000001259 photo etching Methods 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910018557 Si O Inorganic materials 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Abstract
The application discloses a wafer processing method, and relates to the field of semiconductor manufacturing. The wafer processing method comprises setting a loading area environment of a vertical furnace tube machine platform as an oxygen-containing environment; transferring the wafer to a vertical furnace platform; forming a silicon nitride film on the wafer through a vertical furnace tube machine; conveying the wafer with the silicon nitride film to a loading area; the method solves the problems that the existing silicon nitride film has poor hydrophilicity and easily causes uneven BARC coating; the method achieves the effects of improving the hydrophilicity of the surface of the silicon nitride film and avoiding silicon loss caused by forming bubbles on the substrate during photoetching under the condition of not increasing the process cost.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a wafer processing method.
Background
The vertical furnace tube machine is one of important process devices in a semiconductor manufacturing production line, and can be used for the processes of diffusion, oxidation, annealing, chemical vapor deposition, alloy and the like of large-scale integrated circuits, discrete devices, power electronic devices, photoelectric devices, optical fibers and the like. And (3) feeding each batch (lot) into a reaction chamber of the vertical furnace tube machine platform through the crystal boat to carry out corresponding process.
In the manufacturing process of some chips, a silicon nitride film is deposited through a vertical furnace tube machine, and photoetching is carried out after the silicon nitride film is formed. In the photolithography process, a Bottom Anti-Reflection Coating (BARC) is required to be coated on the surface of the silicon nitride film. However, BARC is sensitive to the hydrophilicity of the surface of the film, and the silicon nitride film has strong hydrophobicity and poor hydrophilicity, so that the BARC is easily coated unevenly.
Disclosure of Invention
In order to solve the problems in the related art, the present application provides a wafer processing method. The technical scheme is as follows:
in one aspect, an embodiment of the present application provides a wafer processing method, including:
setting the loading area environment of the vertical furnace tube machine platform as an oxygen-containing environment;
transferring the wafer to the vertical furnace platform;
forming a silicon nitride film on the wafer through the vertical furnace tube machine platform;
and conveying the wafer with the silicon nitride film to the loading area.
Optionally, the transferring the wafer on which the silicon nitride film is formed to the loading area includes:
and controlling the wafer with the silicon nitride film to move from the reaction chamber of the vertical furnace tube machine station to the loading area at a preset speed.
Optionally, the predetermined speed is less than 200 mm/min.
Optionally, the setting of the loading area environment of the vertical furnace tube platform as an oxygen-containing environment includes:
and introducing oxygen or oxygen-containing gas into the loading area of the vertical furnace tube machine.
Optionally, the oxygen concentration of the loading zone environment is 100000-250000 ppm.
Optionally, the wafer is placed on a wafer boat.
The technical scheme at least comprises the following advantages:
setting the loading area environment of a vertical furnace tube machine platform as an oxygen-containing environment; transferring the wafer to a vertical furnace platform; forming a silicon nitride film on the wafer through a vertical furnace tube machine; conveying the wafer with the silicon nitride film to a loading area; the method solves the problems that the existing silicon nitride film has poor hydrophilicity and easily causes uneven BARC coating; the method achieves the effects of improving the hydrophilicity of the surface of the silicon nitride film and avoiding silicon loss caused by forming bubbles on the substrate during photoetching under the condition of not increasing the process cost.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a wafer processing method according to an embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a flow chart of a wafer processing method according to an embodiment of the present application is shown, the method at least includes the following steps:
At present, when a vertical furnace platen is used to form a silicon nitride film, the loading area (loading area) of the vertical furnace platen is a nitrogen environment, and the gas in the loading area does not contain oxygen.
The loading area environment of the vertical furnace tube machine is changed from nitrogen environment to oxygen-containing environment, so that the gas in the loading area contains oxygen.
The wafer which has completed the processes before the deposition of the silicon nitride film is transferred to the vertical furnace platform.
Optionally, the wafer is transferred to the vertical furnace platform through a wafer transfer pod (FOUP), and the wafer is placed on the wafer boat through the transfer system; the wafer is sent into the reaction chamber of the vertical furnace tube through the wafer boat.
In a reaction chamber of a vertical furnace tube machine, a silicon nitride film is formed on a wafer through a CVD process.
And 104, conveying the wafer with the silicon nitride film to a loading area.
After a silicon nitride film meeting the requirement of the preset thickness is formed on the wafer, the wafer is moved to the loading area from the reaction chamber by moving the wafer boat. The wafer with the silicon nitride film is cooled in the loading area of the vertical furnace platform. The loading area environment of the vertical furnace tube machine platform is still kept to be the oxygen-containing environment.
After the silicon nitride film is formed, the wafer still has residual temperature, such as: the temperature of the wafer reaches 700 ℃, and most Si-N covalent bonds on the surface of the silicon nitride film on the wafer are broken and newly form Si-O bonds under the action of residual high temperature in the cooling process of the wafer in the loading area.
The silicon nitride film formed by the wafer processing method provided by the embodiment of the application is detected by a Transmission Electron Microscope (TEM), and the silicon nitride film formed by the existing method, namely the silicon nitride film formed under the condition that the loading area environment of the vertical furnace tube machine is nitrogen, is detected by the TEM, so that the film qualities of the silicon nitride films corresponding to the two loading area environments are not different; the performance of the silicon nitride film is not influenced by changing the loading area environment of the vertical furnace tube machine.
Because the Si-O bond has better hydrophilicity than the Si-N bond, the surface hydrophilicity of the silicon nitride film is improved, and the coated BARC can more uniformly cover the silicon nitride film in the photoetching process after the silicon nitride film is formed.
In summary, in the wafer processing method provided in the embodiment of the present application, the loading area environment of the vertical furnace platform is set to be an oxygen-containing environment; transferring the wafer to a vertical furnace platform; forming a silicon nitride film on the wafer through a vertical furnace tube machine; conveying the wafer with the silicon nitride film to a loading area; the method solves the problems that the existing silicon nitride film has poor hydrophilicity and easily causes uneven BARC coating; the method achieves the effects of improving the hydrophilicity of the surface of the silicon nitride film and avoiding silicon loss caused by forming bubbles on the substrate during photoetching under the condition of not increasing the process cost.
In an alternative embodiment based on the embodiment shown in fig. 1, in order to make the surface of the silicon nitride film sufficiently form Si — O bonds and achieve better hydrophilicity of the surface of the silicon nitride film, the step 104, i.e. the step "transporting the wafer with the silicon nitride film formed to the loading area", can be achieved by:
the wafer with the silicon nitride film is controlled to move from the reaction chamber of the vertical furnace platform to the loading area according to a predetermined speed.
The wafers are placed on a wafer boat. Optionally, the wafer is moved from the reaction chamber of the vertical furnace platform to the loading region at a predetermined speed by controlling the moving speed of the boat on which the wafer is loaded.
The predetermined speed is less than 200 mm/min.
Optionally, the wafer moves from the reaction chamber to the loading region at a constant speed.
In an alternative embodiment based on the embodiment shown in fig. 1, the step 101, namely the step "setting the loading area environment of the vertical furnace platform to be an oxygen-containing environment", may be implemented as follows:
introducing oxygen or oxygen-containing gas into the loading area of the vertical furnace tube machine.
Optionally, air is introduced into the loading area of the vertical furnace tube machine. Because the air contains oxygen, the loading area environment of the vertical furnace tube machine can become an oxygen-containing environment.
Optionally, oxygen is introduced into the loading area of the vertical furnace tube platform, so that the oxygen concentration in the environment of the loading area is a predetermined concentration.
Optionally, oxygen and other gases which do not affect the performance of the silicon nitride film are introduced into the loading area of the vertical furnace tube machine, so that the environment of the loading area is an oxygen-containing environment. Such as: and introducing oxygen and nitrogen into a loading area of the vertical furnace tube machine platform to enable the oxygen concentration in the environment of the loading area to be the preset concentration.
In one example, the loading region environment of the vertical furnace tool is set to be an oxygen-containing environment, and the oxygen concentration of the loading region environment is 100000-250000 ppm.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (6)
1. A method of processing a wafer, the method comprising:
setting the loading area environment of the vertical furnace tube machine platform as an oxygen-containing environment;
transferring the wafer to the vertical furnace platform;
forming a silicon nitride film on the wafer through the vertical furnace tube machine platform;
and conveying the wafer with the silicon nitride film to the loading area.
2. The method of claim 1, wherein the transferring the wafer formed with the silicon nitride film to the loading area comprises:
and controlling the wafer with the silicon nitride film to move from the reaction chamber of the vertical furnace tube machine station to the loading area at a preset speed.
3. The method of claim 2, wherein the predetermined speed is less than 200 mm/min.
4. The method of claim 1 or 2, wherein the setting the loading zone environment of the vertical furnace platen to an oxygen-containing environment comprises:
and introducing oxygen or oxygen-containing gas into the loading area of the vertical furnace tube machine.
5. The method as claimed in claim 1 or 4, wherein the oxygen concentration of the loading zone environment is 100000-250000 ppm.
6. The method of any of claims 1 to 5, wherein the wafers are placed on a boat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110905617.8A CN113782420A (en) | 2021-08-05 | 2021-08-05 | Wafer processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110905617.8A CN113782420A (en) | 2021-08-05 | 2021-08-05 | Wafer processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113782420A true CN113782420A (en) | 2021-12-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110905617.8A Pending CN113782420A (en) | 2021-08-05 | 2021-08-05 | Wafer processing method |
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| CN (1) | CN113782420A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040052618A1 (en) * | 2002-09-12 | 2004-03-18 | Hitachi Kokusai Electric Inc. | Semiconductor device producing apparatus and producing method of semiconductor device |
| CN101673680A (en) * | 2008-09-10 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Method for removing ammonium chloride crystals in silicon nitride deposition process |
| CN102420129A (en) * | 2011-09-28 | 2012-04-18 | 上海宏力半导体制造有限公司 | Method for preventing photoresist holes from forming on metal layer |
| JP2014103280A (en) * | 2012-11-20 | 2014-06-05 | Tokyo Electron Ltd | Heat insulator structure, substrate holding boat, processing unit and processing system |
| US20170352557A1 (en) * | 2016-06-06 | 2017-12-07 | Applied Materials, Inc. | Method for wafer outgassing control |
| CN107533974A (en) * | 2015-05-07 | 2018-01-02 | 德克萨斯仪器股份有限公司 | Low stress low hydrogen type lpcvd silicon nitride |
| CN110592666A (en) * | 2019-08-27 | 2019-12-20 | 长江存储科技有限责任公司 | Polycrystalline silicon film deposition system and method |
| CN112313777A (en) * | 2018-10-15 | 2021-02-02 | 玛特森技术公司 | Ozone for selective hydrophilic surface treatment |
-
2021
- 2021-08-05 CN CN202110905617.8A patent/CN113782420A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040052618A1 (en) * | 2002-09-12 | 2004-03-18 | Hitachi Kokusai Electric Inc. | Semiconductor device producing apparatus and producing method of semiconductor device |
| CN101673680A (en) * | 2008-09-10 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Method for removing ammonium chloride crystals in silicon nitride deposition process |
| CN102420129A (en) * | 2011-09-28 | 2012-04-18 | 上海宏力半导体制造有限公司 | Method for preventing photoresist holes from forming on metal layer |
| JP2014103280A (en) * | 2012-11-20 | 2014-06-05 | Tokyo Electron Ltd | Heat insulator structure, substrate holding boat, processing unit and processing system |
| CN107533974A (en) * | 2015-05-07 | 2018-01-02 | 德克萨斯仪器股份有限公司 | Low stress low hydrogen type lpcvd silicon nitride |
| US20170352557A1 (en) * | 2016-06-06 | 2017-12-07 | Applied Materials, Inc. | Method for wafer outgassing control |
| CN112313777A (en) * | 2018-10-15 | 2021-02-02 | 玛特森技术公司 | Ozone for selective hydrophilic surface treatment |
| CN110592666A (en) * | 2019-08-27 | 2019-12-20 | 长江存储科技有限责任公司 | Polycrystalline silicon film deposition system and method |
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