CN107255912B - Improve the method for crystal edge defect in photoresist coating procedure - Google Patents
Improve the method for crystal edge defect in photoresist coating procedure Download PDFInfo
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- CN107255912B CN107255912B CN201710652795.8A CN201710652795A CN107255912B CN 107255912 B CN107255912 B CN 107255912B CN 201710652795 A CN201710652795 A CN 201710652795A CN 107255912 B CN107255912 B CN 107255912B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 167
- 238000000034 method Methods 0.000 title claims abstract description 115
- 239000011248 coating agent Substances 0.000 title claims abstract description 97
- 238000000576 coating method Methods 0.000 title claims abstract description 97
- 239000013078 crystal Substances 0.000 title claims abstract description 77
- 230000007547 defect Effects 0.000 title claims abstract description 32
- 238000012545 processing Methods 0.000 claims abstract description 105
- 238000004140 cleaning Methods 0.000 claims abstract description 66
- 238000005406 washing Methods 0.000 claims abstract description 55
- 230000008569 process Effects 0.000 claims abstract description 32
- 230000006641 stabilisation Effects 0.000 claims abstract description 15
- 238000011105 stabilization Methods 0.000 claims abstract description 15
- 230000006872 improvement Effects 0.000 claims abstract description 14
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 39
- 239000000243 solution Substances 0.000 claims description 14
- 230000009467 reduction Effects 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 64
- 230000001133 acceleration Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 239000011324 bead Substances 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
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- 238000012986 modification Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 208000005156 Dehydration Diseases 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 230000000087 stabilizing effect Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention provides a kind of method improving crystal edge defect in photoresist coating procedure, including：Photoresist coating is carried out to coat rotating speed, forms the photoresist coat with preset thickness in pending wafer upper surface；The main rotating speed processing of multisection type is carried out to photoresist coat, including the processing of the first rotating speed and rotating speed are handled less than the second rotating speed of the first rotating speed, and it is made to keep moistening；The processing of second rotating speed include the first stage the steady film to crystal round fringes before washing process, to moisten crystal round fringes and remove the part that photoresist coat overflows to crystal round fringes after application；And the film thickness stabilization processes of second stage；Washing process carries out spin drying to remove the part that photoresist coat is diffused into crystal round fringes after carrying out steady film to crystal round fringes.Through the above scheme, the present invention can effectively remove the photoresist of the crystal round fringes in photoresist coating procedure, and the yield of product is made to increase by 1~2% by the improvement of technological process and cleaning ozzle equipment to processing.
Description
Technical field
The invention belongs to semiconductor preparing process technical fields, more particularly to brilliant in a kind of improvement photoresist coating procedure
The method of side defect.
Background technology
In semiconductor fabrication process, the step of photoetching process is considered as most critical in IC manufacturing always,
Need to be used multiple times in entire technical process, stability, reliability and process yield to the quality of product, yield and
Cost has important influence.Photoetching process is a complicated process, and essence is patch structure with the shape of figure
Formula will perform etching after copying on the chip with ion implanting：A layer photoresist is formed on chip using glue spreader first
Thin layer, then illumination, which is radiated at by a mask plate on photoresist thin layer, makes its exposure two go bad, and is finally carried out using developer solution
It is shifted in development completion figure.
Currently, in photoresist spin coating process, need to carry out edge bead removal technique or the removal of back side photoresist
Technique, such as (Edge Bead Removal, EBR backside rinse, BSR), to remove the photoresist of crystal round fringes,
It is mainly removed by chemical method and optical means, still, for some special photoresist coats, as bottom is anti-
Reflecting layer (BARC) be difficult removed by existing mode, in this regard, also carried out it is a large amount of research and practice, if any by changing
Become the composition (Replace resist content) of photoresist to solve the problems, such as that above-mentioned cleaning is sordid, but this way meeting
Critical process processing procedure is caused to change；Material (the Replace backside rinse by changing cleaning solution also
Solventmaterial it) solves the above problems, but this way can make the equipment of cleaning solution change again.
Change minimum to other equipment and to improve crystal round fringes photoresist to maximum efficiency remaining therefore it provides a kind of
Processes and apparatus, the crystal edge defect for solving the problems, such as in photoresist coating procedure are necessary.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of improvement photoresist coating procedures
The method of middle crystal edge defect, for solving the problems, such as that the photoresist of Waffer edge in the prior art is difficult to remove.
In order to achieve the above objects and other related objects, crystal edge lacks in a kind of improvement photoresist coating procedure of present invention offer
Sunken method, includes the following steps：
1) photoresist coating is carried out to coat rotating speed, to form the photoresist coat with preset thickness in pending crystalline substance
Round upper surface；
2) it carries out the main rotating speed of multisection type to the photoresist coat to handle, and the main rotating speed processing packet of the multisection type
The second rotating speed for being less than first rotating speed processing with rotating speed containing the processing of the first rotating speed is handled, and the photoresist coat is made to exist
Moistening is kept during the main rotating speed processing；In the first stage of second rotating speed processing, to being coated with the light
The back side of the wafer of photoresist coat carries out washing process before steady film, to moisten the edge of the wafer and remove the photoresist
Coat overflows to the part of the crystal round fringes after application；In the second stage of second rotating speed processing, to the light
Photoresist coat carries out film thickness stabilization processes；
3) to washing process after the steady film of the back side of wafer progress, to remove the photoresist coat in film thickness
The part of the crystal round fringes is diffused into when stabilization processes；And
4) spin drying carried out to the wafer, the photoresist coat is only formed in the upper surface of the wafer and not
With moistening mobilization force.
As a preferred embodiment of the present invention, the main rotating speed processing of multisection type also includes that reduction of speed is handled, and is implemented
Between the first rotating speed processing and the processing of the second rotating speed, wherein the rotating speed of the reduction of speed processing is less than at first rotating speed
The rotating speed of reason, and the photoresist coat is made to keep moistening during the reduction of speed is handled.
As a preferred embodiment of the present invention, the carry out of washing process and step 3) is steady before the carry out steady film of step 2)
Further include the steps that coating auxiliary liquid is sprayed to the photoresist coat simultaneously after film at least one of washing process.
As a preferred embodiment of the present invention, the specific steps of step 1) include：
1-1) upper surface of pending wafer is carried out to pre-wet processing, and first is carried out to the wafer upper surface simultaneously
The processing of secondary sprinkling coating auxiliary liquid；
Photoresist 1-2) is placed in the wafer upper surface and rotary coating is carried out with the coating rotating speed, is had to be formed
The photoresist coat of preset thickness.
As a preferred embodiment of the present invention, step 1-1) and step 1-2) between, further include in step 1-1) it completes
After stop preset time, and the step of second of sprinkling coating auxiliary liquid processing is carried out to the upper surface of the wafer after stop
Suddenly, wherein the wafer stops operating during carrying out the stop, and carries out at second of sprinkling coating auxiliary liquid
The rotating speed of reason is less than the rotating speed for carrying out the first time sprinkling coating auxiliary liquid processing.
As a preferred embodiment of the present invention, the preset time is 0.5~1.5s；Second of sprinkling is carried out to apply
The time for covering auxiliary liquid processing is 0.1~0.5s, and rotating speed is 50~150 revs/min.
As a preferred embodiment of the present invention, step 1-1) described pre-wet processing and first time sprinkling applies
The time for covering auxiliary liquid processing is 2~7s, and rotating speed is 1000~2000 revs/min；Step 1-2) the rotary coating when
Between be 0.5~5s, rotating speed be 3000~5000 revs/min.
As a preferred embodiment of the present invention, time of first rotating speed processing is 2~5s, rotating speed is 1800~
2800 revs/min；The time of washing process is 3~5s before the steady film, and rotating speed is 1000~1500 revs/min；The film thickness
The time of stabilization processes is 15~25s, and rotating speed is 1000~1500 revs/min；The time of washing process is 5 after the steady film
~10s, rotating speed are 800~1200 revs/min.
As a preferred embodiment of the present invention, in step 2), using the first cleaning ozzle to being coated with the photoresist
The crystal round fringes of coat carry out washing process before the steady film, wherein the ozzle mouth edge of the first cleaning ozzle and institute
It is 0.1~10mm to state the distance between wafer lateral margin, between the injection direction and the crystal column surface of the first cleaning ozzle
Angle be 45~60 °, with increase it is described first cleaning the ozzle cleaning solution sprayed and the crystal round fringes between adherency
Power, and reduce the centrifugal force of the cleaning solution positioned at the crystal round fringes.
As a preferred embodiment of the present invention, a diameter of 0.6~0.8mm of the first cleaning ozzle, described first
The flow rate of liquid cleaned in ozzle is 90~100L/min.
As a preferred embodiment of the present invention, in step 3), using the second cleaning ozzle to being coated with the photoresist
The crystal round fringes of coat carry out washing process after the steady film, wherein the ozzle mouth edge of the second cleaning ozzle and institute
It is 40~50mm to state the distance between wafer lateral margin, between the injection direction and the crystal column surface of the second cleaning ozzle
Angle is 30~40 °, and the flow rate of liquid of a diameter of 0.9~1.2mm of the second cleaning ozzle, the second cleaning ozzle are
45~85L/min.
As described above, the method for improving crystal edge defect in photoresist coating procedure of the present invention, has the advantages that：
1) method for improving crystal edge defect in photoresist coating procedure of the invention, by technological process to processing and
The improvement for cleaning ozzle equipment, can effectively remove the photoresist of the crystal round fringes in photoresist coating procedure, and avoid thus
The generation of caused surface defect；
2) method for improving crystal edge defect in photoresist coating procedure of the invention, can cleaning wafer side to greatest extent
The photoresist of edge, maximum can be to 100% removing, and the yield of product is made to increase by 1~2%.
Description of the drawings
Fig. 1 is shown as the flow chart for improving each step of crystal edge defect method in photoresist coating procedure of the present invention.
Fig. 2 is shown as the light for improving offer before the step 1) of crystal edge defect method in photoresist coating procedure of the present invention
The brief configuration schematic diagram of photoresist coating equipment.
Fig. 3 is shown as improving for the present invention and carries out first turn in photoresist coating procedure in the step 2) of crystal edge defect method
Obtained structural schematic diagram after speed processing.
Before Fig. 4 is shown as the middle steady film of progress of the step 2) for improving crystal edge defect method in photoresist coating procedure of the present invention
The schematic diagram of washing process.
Before Fig. 5 is shown as the middle steady film of progress of the step 2) for improving crystal edge defect method in photoresist coating procedure of the present invention
Obtained structural schematic diagram after washing process.
After Fig. 6 is shown as the middle steady film of progress of the step 3) for improving crystal edge defect method in photoresist coating procedure of the present invention
The schematic diagram of washing process.
After Fig. 7 is shown as the middle steady film of progress of the step 3) for improving crystal edge defect method in photoresist coating procedure of the present invention
Obtained structural schematic diagram after washing process.
Component label instructions
11 wafers
The photoresist coat obtained after 21 steps 2)
Remaining edge bead after 211 steps 2)
The photoresist coat obtained after 22 steps 2)
The photoresist coat obtained after 23 steps 3)
31 first cleaning ozzles
32 second cleaning ozzles
41 rotating platforms
51 coating auxiliary liquid
S1~S4 steps
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1 to Fig. 7.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout form may also be increasingly complex.
As shown in Figure 1, the method that the present invention provides crystal edge defect in a kind of improvement photoresist coating procedure, including walks as follows
Suddenly：
1) photoresist coating is carried out to coat rotating speed, to form the photoresist coat with preset thickness in pending crystalline substance
Round upper surface；
2) it carries out the main rotating speed of multisection type to the photoresist coat to handle, and the main rotating speed processing packet of the multisection type
The second rotating speed for being less than first rotating speed processing with rotating speed containing the processing of the first rotating speed is handled, and the photoresist coat is made to exist
Moistening is kept during the main rotating speed processing；In the first stage of second rotating speed processing, to being coated with the light
The back side of the wafer of photoresist coat carries out washing process before steady film, to moisten the edge of the wafer and remove the photoresist
Coat overflows to the part of the crystal round fringes after application；In the second stage of second rotating speed processing, to the light
Photoresist coat carries out film thickness stabilization processes；
3) to washing process after the steady film of the back side of wafer progress, to remove the photoresist coat in film thickness
The part of the crystal round fringes is diffused into when stabilization processes；And
4) spin drying carried out to the wafer, the photoresist coat is only formed in the upper surface of the wafer and not
With moistening mobilization force.
Further crystal edge in the improvement photoresist coating procedure provided in the present invention is lacked below in conjunction with specific attached drawing
Sunken method is described in detail.
As shown in the S1 and Fig. 2 in Fig. 1, step 1) is carried out, photoresist coating is carried out to coat rotating speed, has in advance to be formed
If the photoresist coat of thickness is in the upper surface of pending wafer 11；
Specifically, in step 1), first in the surface (wafer in the present embodiment of the wafer of photoresist to be coated
Upper surface) the photoresist coat with preset thickness is formed, to complete the photoresist initial application in entire technical process
Step ensures product yield to ensure the stability of the follow-up finally formed photoresist coat.
In addition, before carrying out step 1), further includes that a photoresist coating equipment is provided, wafer 11 is loaded into the light
Step on the rotating platform 41 of photoresist coating equipment, specifically, the photoresist coating equipment is ordinary skill people
Arbitrary photoresist coating equipment, such as glue spreader known to member drive the rotating platform 41 by electric rotating machine in the present embodiment
Rotation, and then the wafer 11 is driven to rotate, to complete the coating procedure of entire photoresist.
As an example, the specific steps of step 1) include：
1-1) pre-wet processing to 11 upper surface of pending wafer, and the is carried out to 11 upper surface of the wafer simultaneously
The processing of primary sprinkling coating auxiliary liquid；
Photoresist 1-2) is placed in 11 upper surface of the wafer and rotary coating is carried out with the coating rotating speed, to form tool
There is the photoresist coat of preset thickness.
Specifically, formed preset thickness the photoresist coat the step of include step 1-1) pretreatment and step
Rapid 1-2) photoresist rotary coating, wherein it is described pre-wet processing be subsequent photoresist coat good coating is provided
The obstruction in photoresist coating procedure is reduced on surface；Carrying out the first time sprinkling coating auxiliary liquid can assist photoresist to apply
It covers, promotes the adhesion characteristic of photoresist and wafer, ingredient material preferably close with the photoresist to be coated, according to reality
Depending on demand, wherein the sprinkling of coating auxiliary liquid 51 is as described in Figure 2, preferably front sprinkling.It is applied in addition, carrying out the rotation
Further include the time for carrying out a reflux of slowing down after cloth, prevents too fast rotary coating rotating speed from influencing subsequent technique, it is described to subtract
The time of speed reflux is 0.5~1.5s, and rotating speed is 50~150 revs/min (rpm).Wherein, described to pre-wet processing and described the
The time of primary sprinkling coating auxiliary liquid processing is 2~7s, and preferably 3~6s, rotating speed is 1000~2000 revs/min (rpm),
Preferably 1200~1800 revs/min, acceleration is 10000 revs/min/second (rpm/s).The time of the rotary coating is
0.5~5s, preferably 1~3s, rotating speed are 3000~5000 revs/min, and preferably 3500~4500 revs/min, acceleration is
30000 revs/min/second (rpm/s).
As an example, step 1-1) and step 1-2) between, further include in step 1-1) preset time is stopped after the completion, and
The step of second of sprinkling coating auxiliary liquid processing is carried out to the upper surface of the wafer after stop, wherein stop described in progress
The wafer stops operating during staying, and carries out the rotating speed that described second is sprayed coating auxiliary liquid processing and be less than progress institute
State the rotating speed of the auxiliary liquid processing of sprinkling coating for the first time.
Specifically, the purpose for carrying out the stop of the preset time is that there are when certain reaction to the processing carried out before
Between, with the coating for the photoresist more effectively stablized, in addition, further include the steps that carrying out primary coating auxiliary liquid sprinkling again,
To promote the coating of photoresist.In other embodiments, the step of second sprinkling coating auxiliary liquid processing can with it is rear
The rotary coating of continuous photoresist is carried out at the same time, and controls spraying time according to actual demand.Specifically, the preset time is
0.5~1.5s, preferably 0.8~1.2s, the rotating speed for carrying out the second sprinkling coating auxiliary liquid processing is 50~150 turns/
Minute, preferably 80~120 revs/min, acceleration 10000rpm/s, the time is 0.1~0.5s, preferably 0.2~0.4s.
As in Fig. 1 S2 and Fig. 3~5 shown in, carry out step 2), to the photoresist coat carry out multisection type mainly turn
Speed processing, and the processing of the multisection type main rotating speed is less than the of first rotating speed processing comprising the processing of the first rotating speed and rotating speed
The processing of two rotating speeds, and the photoresist coat is made to keep moistening during the main rotating speed processing；Described second
The first stage of rotating speed processing carries out washing process before steady film to the back side of the wafer coated with the photoresist coat, with
It moistens the edge of the wafer and removes the part that the photoresist coat overflows to the crystal round fringes after application；Institute
The second stage for stating the processing of the second rotating speed carries out film thickness stabilization processes to the photoresist coat；
Specifically, carrying out the first rotating speed processing, mainly making the photoresist coat tool, there are one thickness and profits
Humidity thereby may be ensured that in subsequent cleaning process, not interfere with the stability of photoresist coat, in addition, at this
In a process, the photoresist coat need to be controlled and be in moisture state, can just provided for follow-up edge bead of removing
One suitable removal condition, not only to be stablized but also margin residual can be removed to clean photoresist coat.Wherein, institute
State the first rotating speed processing time be 2~5s, rotating speed be 1800~2800 revs/min, preferably 2000~2500 revs/min,
Acceleration is 10000rpm/s.
Specifically, washing process is the first para-crystal carried out to the wafer coated with photoresist coat before the steady film
Circle Wafer Backside Cleaning (Backside rinse clean), this step makes most of photoresist of wafer lateral margin be removed, and Fig. 5 can be with
Find out, by the step, wafer lateral margin there remains part edge photoresist 211, in addition, control photoresist coat wetting,
There is provided condition to remove wafer lateral margin photoresist for the first time, wherein the washing process of crystal round fringes cannot be carried out it is too early, it is no
Photoresist coat, the i.e. stability of film thickness can be then influenced, in addition, cannot also carry out too late, otherwise can lead to photoresist
Have been secured to crystal column surface, it is difficult to remove.Wherein, before the steady film washing process time be 3~5s, rotating speed be 1000~
1500 revs/min, acceleration 10000rpm/s.
As an example, the main rotating speed processing of multisection type also includes that reduction of speed is handled, implement in first rotating speed processing
Between the processing of the second rotating speed, wherein the rotating speed of the reduction of speed processing is less than the rotating speed of first rotating speed processing, and makes described
Photoresist coat keeps moistening during the reduction of speed is handled.
Specifically, also increasing step reduction of speed processing between first rotating speed processing and second rotating speed processing
Step, to ensure that there are one good transition between the two, at this point, the rotating speed of reduction of speed processing is less than first rotating speed
The rotating speed of processing adapts to follow-up washing to reduce rotating speed.Wherein, the time of the reduction of speed processing is 0.5~1.5s, rotating speed
It is 1000~1500 revs/min, acceleration 10000rpm/s.
Specifically, to be adjusted film thickness to the photoresist coat after washing process before carrying out the steady film
Stabilization processes, due to carry out the first rotating speed processing time much smaller than the prior art carry out main rotating speed processing when
Between, therefore, during the film thickness stabilization processes of the step, refill the time of required rotary coating, i.e. control time
And rotating speed and actual demand, adjust suitable film thickness.Wherein, the time of the film thickness stabilization processes is 15~25s, is turned
Speed is 1000~1500 revs/min, acceleration 10000rpm/s.
As in Fig. 1 S5 and Fig. 6 and Fig. 7 shown in, carry out step 3), the crystal round fringes carried out after steady film at washing
Reason, the part of the crystal round fringes is diffused into remove the photoresist coat in film thickness stabilization processes；
Specifically, washing process is similar to conventional wafer Wafer Backside Cleaning technique in the prior art after the steady film, at this
In embodiment, using routine techniques, the wafer coated with photoresist coat is comprehensively cleaned, to ensure crystal round fringes
Photoresist be cleaned, obtain ideal photoresist coat.Wherein, after the steady film washing process time be 5~
10s, rotating speed are 800~1200 revs/min, acceleration 5000rpm/s.
As shown in the S4 in Fig. 1, step 4) is carried out, spin drying is carried out to the wafer, the photoresist coat is only
It is formed in the upper surface of the wafer and without moistening mobilization force.
Further include the process that free drying is carried out to photoresist coat, separately specifically, after by above-mentioned processing
Outside, further include the process slowed down after dehydrated.Wherein, the time of free drying is 5~15s, preferably 8~12s, and rotating speed is
The time of 1500~2500 revs/min, preferably 1800~2200 revs/min, acceleration 10000rpm/s, deceleration is 0.1
~0.8s, acceleration 5000rpm/s.
As an example, before the carry out steady film of step 2) after the steady film of the progress of washing process and step 3) in washing process
Further include the steps that coating auxiliary liquid is sprayed to the photoresist coat simultaneously at least one.
Specifically, before the namely described steady film the step of washing process and after the steady film the step of washing process, it can
With during carrying out wafer rear washing, while the coating auxiliary liquid is sprayed, to be further ensured that the photoresist
The stability of coat.
Washing rotating speed before steady film is more than the washing rotating speed after steady film, therefore to the wafer lateral margin pre-wetted processing before steady film
With advance washing process so that the residual photoresist after steady film is just not easy to adhere to the lateral margin of wafer.
It should also be noted that, in the present invention, other than the processing step to photoresist coating procedure is improved, also
Hardware device is improved, in the present embodiment, the cleaning ozzle to carrying out wafer rear cleaning is improved, to ensure
The cleaning solution that self-cleaning ozzle is sprayed can be very good to be adsorbed on wafer, that is, increase the adhesion strength of cleaning solution, reduce centrifugation
Power.
As an example, in step 2), using the first cleaning ozzle to the crystal round fringes coated with the photoresist coat
Carry out washing process before the steady film, wherein between the ozzle mouth edge and the wafer lateral margin of the first cleaning ozzle
Distance is 0.1~10mm, and the angle between the injection direction and the crystal column surface of the first cleaning ozzle is 45~60 °,
To increase the adhesion strength between the first cleaning ozzle cleaning solution sprayed and the crystal round fringes, and reduces and be located at institute
State the centrifugal force of the cleaning solution of crystal round fringes.
As an example, a diameter of 0.6~0.8mm of the first cleaning ozzle, described first cleans the liquid in ozzle
Flow velocity is 90~100L/min.
Specifically, ozzle is cleaned to it and is improved in washing process before steady film in step 2), it is current to increase
Prewashed effect before film thickness stabilization processes, the adhesion strength being mainly the increase between cleaning solution and wafer, reduce its from
Mental and physical efforts thereby may be ensured that and fully be reacted between cleaning solution and photoresist, and then remove unwanted photoresist to greatest extent,
Specific practice is to reduce cleaning the distance between ozzle and crystal round fringes, increases gradient, make cleaning ozzle and wafer it
Between become more vertical, increase the diameter of cleaning ozzle, and increase the flow velocity of cleaning solution outflow, to ensure that wafer lateral margin
Photoresist is thoroughly washed, certainly, in other embodiments, can also to being improved one of in above-mentioned improvement,
Can also be that two or more improvements therein are improved, with saving improvement cost, this is according to actual demand
And design, it is not particularly limited herein.In the present embodiment, the first cleaning the distance between the ozzle and the wafer lateral margin
For 5mm, the angle between the first cleaning ozzle and the wafer is 50 °, and described first cleans a diameter of of ozzle
0.7mm, the described first flow rate of liquid cleaned in ozzle is 95L/min
As an example, in step 3), using the second cleaning ozzle to the crystal round fringes coated with the photoresist coat
Carry out washing process after the steady film, wherein between the ozzle mouth edge and the wafer lateral margin of the second cleaning ozzle
Distance is 40~50mm, and the angle between the injection direction and the crystal column surface of the second cleaning ozzle is 30~40 °, institute
A diameter of 0.9~1.2mm of the second cleaning ozzle is stated, the flow rate of liquid of the second cleaning ozzle is 45~85L/min.
Specifically, conventional ozzle may be used to wafer side during washing process after the steady film that step 3) carries out
The photoresist of edge is cleaned, and the second cleaning the distance between the ozzle and the wafer lateral margin is 45mm, and described the
Angle between two cleaning ozzles and the wafer is 35 °, and a diameter of 1.1mm of the second cleaning ozzle, described second is clear
The flow rate of liquid for washing ozzle is 50L/min.Certainly, in the step, it is similar that the first cleaning ozzle as described above can also be carried out
Improvement, to adapt to the demand cleaned to crystal round fringes photoresist comprehensively.
Specifically, in the present embodiment, being selected according to above-mentioned condition, the technique step in specific photoresist coating procedure
Suddenly and design parameter is：1) started the time together first, be selected as 1s, speed is 0rpm, acceleration 10000rpm/ at this time
s；2) carry out wafer pre-wets processing, time 5s, rotating speed 1500rpm, acceleration 10000rpm/s, is carried out at the same time the
The technique of primary sprinkling coating auxiliary liquid processing；3) residence time is set, 1s is selected as, speed is 0rpm at this time, is accelerated
Degree is 10000rpm/s；4) the step of carrying out second of sprinkling coating auxiliary liquid processing, time 0.3s, rotating speed 100rpm,
Acceleration is 10000rpm/s；5) rotary coating of photoresist, time 2s, rotating speed 4000rpm are carried out, acceleration is
30000rpm/s, wherein step 4) and step 5) are preferably carried out at the same time；6) buffer time, time 1s, rotating speed are set
For 100rpm, acceleration 30000rpm/s；7) the first rotating speed processing is carried out, time 2.5s, rotating speed 2200rpm accelerate
Degree is 10000rpm/s；8) the second main rotating speed processing, time 1s, rotating speed 1200rpm are carried out, acceleration is
10000rpm/s；9) washing process before the steady film of progress, time 5s, rotating speed 1200rpm, acceleration 10000rpm/s, together
When sprinkling coating auxiliary liquid；10) film stabilizing treatment technique, time 25s, rotating speed 1200rpm are carried out, acceleration is
10000rpm/s；11) washing process after the steady film of progress, time 5s, rotating speed 1000rpm, acceleration 5000rpm/s, together
When sprinkling coating auxiliary liquid；12) centrifugal dehydration treatment, time 10s, rotating speed 2000rpm are carried out, acceleration is
10000rpm/s；13) deceleration processing, time 0.5s, rotating speed 0rpm, acceleration 5000rpm/s are carried out.
In conclusion the method that the present invention provides crystal edge defect in a kind of improvement photoresist coating procedure, including walks as follows
Suddenly：Photoresist coating is carried out to coat rotating speed, to form the photoresist coat with preset thickness in the upper of pending wafer
Surface；Multisection type main rotating speed processing carried out to the photoresist coat, and the main rotating speed processing of the multisection type includes the
The second rotating speed that the processing of one rotating speed is less than first rotating speed processing with rotating speed is handled, and makes the photoresist coat described
Moistening is kept during main rotating speed processing；In the first stage of second rotating speed processing, to being coated with the photoresist
The back side of the wafer of coat carries out washing process before steady film, is coated with moistening the edge of the wafer and removing the photoresist
Layer overflows to the part of the crystal round fringes after application；In the second stage of second rotating speed processing, to the photoresist
Coat carries out film thickness stabilization processes；To washing process after the steady film of back side progress of the wafer, to remove the light
Photoresist coat is diffused into the part of the crystal round fringes in film thickness stabilization processes；And the wafer be spin-dried for certainly
Dry, the photoresist coat is only formed in the upper surface of the wafer and without moistening mobilization force.Through the above scheme, originally
The method for improving crystal edge defect in photoresist coating procedure of invention passes through technological process to processing and cleaning ozzle equipment
Improvement, the photoresist of the crystal round fringes in photoresist coating procedure can be effectively removed, and avoid thus caused by surface lack
Sunken generation；The method for improving crystal edge defect in photoresist coating procedure of the present invention, can cleaning wafer side to greatest extent
The photoresist of edge, maximum can be to 100% removing, and the yield of product is made to increase by 1~2%.So the present invention effectively overcomes now
There is the various shortcoming in technology and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (11)
1. a kind of method improving crystal edge defect in photoresist coating procedure, which is characterized in that include the following steps：
1) photoresist coating is carried out to coat rotating speed, to form the photoresist coat with preset thickness in pending wafer
Upper surface；
2) it carries out the main rotating speed of multisection type to the photoresist coat to handle, and the main rotating speed processing of the multisection type includes the
The second rotating speed that the processing of one rotating speed is less than first rotating speed processing with rotating speed is handled, and makes the photoresist coat described
Moistening is kept during main rotating speed processing；In the first stage of second rotating speed processing, to being coated with the photoresist
The back side of the wafer of coat carries out washing process before steady film, is coated with moistening the edge of the wafer and removing the photoresist
Layer overflows to the part of the crystal round fringes after application；In the second stage of second rotating speed processing, to the photoresist
Coat carries out film thickness stabilization processes, and the main rotating speed processing of multisection type also includes that reduction of speed is handled, and is implemented described first
Between rotating speed processing and the processing of the second rotating speed, wherein the time of the first rotating speed processing is 2~5s；The film thickness stabilizes
The time of processing is 15~25s, and rotating speed is 1000~1500 revs/min；
3) to washing process after the steady film of the back side of wafer progress, stablized in film thickness with removing the photoresist coat
It is diffused into the parts of the crystal round fringes when changing processing, the rotating speed of washing process is more than after the steady film at washing before the steady film
The rotating speed of reason；And
4) spin drying is carried out to the wafer, the photoresist coat is only formed in the upper surface of the wafer and does not have
Moisten mobilization force.
2. the method according to claim 1 for improving crystal edge defect in photoresist coating procedure, which is characterized in that the drop
The rotating speed of speed processing is less than the rotating speed of first rotating speed processing, and the mistake for making the photoresist coat be handled in the reduction of speed
Moistening is kept in journey.
3. the method according to claim 1 for improving crystal edge defect in photoresist coating procedure, which is characterized in that in step
2) further include right simultaneously before the steady film of carry out after the steady film of carry out of washing process and step 3) at least one of washing process
The step of photoresist coat sprinkling coating auxiliary liquid.
4. the method according to claim 1 for improving crystal edge defect in photoresist coating procedure, which is characterized in that step 1)
Specific steps include：
1-1) upper surface of pending wafer is carried out to pre-wet processing, and first time spray is carried out to the wafer upper surface simultaneously
Spill the processing of coating auxiliary liquid；
Photoresist 1-2) is placed in the wafer upper surface and rotary coating is carried out with the coating rotating speed, is preset with being formed to have
The photoresist coat of thickness.
5. the method according to claim 4 for improving crystal edge defect in photoresist coating procedure, which is characterized in that step 1-
1) and step 1-2) between, further include in step 1-1) after the completion of stop preset time, and to the upper of the wafer after stop
Surface carries out the step of second of sprinkling coating auxiliary liquid processing, wherein the wafer stops during carrying out the stop
Rotation, and carry out the rotating speed that described second is sprayed coating auxiliary liquid processing and be less than the progress first time sprinkling coating auxiliary liquid
The rotating speed of processing.
6. the method according to claim 5 for improving crystal edge defect in photoresist coating procedure, which is characterized in that described pre-
If the time is 0.5~1.5s；The time for carrying out second of sprinkling coating auxiliary liquid processing is 0.1~0.5s, rotating speed 50
~150 revs/min.
7. the method according to claim 4 for improving crystal edge defect in photoresist coating procedure, which is characterized in that step 1-
1) time that described pre-wets processing and first time sprinkling coating auxiliary liquid processing is 2~7s, rotating speed is 1000~
2000 revs/min；Step 1-2) the rotary coating time be 0.5~5s, rotating speed be 3000~5000 revs/min.
8. the method according to claim 1 for improving crystal edge defect in photoresist coating procedure, which is characterized in that described the
The rotating speed of one rotating speed processing is 1800~2800 revs/min；The time of washing process is 3~5s before the steady film, and rotating speed is
1000~1500 revs/min；The time of washing process is 5~10s after the steady film, and rotating speed is 800~1200 revs/min.
9. according to the method for crystal edge defect in improvement photoresist coating procedure according to any one of claims 1 to 8, feature
It is, in step 2), the steady film is carried out to the crystal round fringes coated with the photoresist coat using the first cleaning ozzle
Preceding washing process, wherein the distance between ozzle mouth edge and described wafer lateral margin of the first cleaning ozzle be 0.1~
10mm, the angle between the injection direction and the crystal column surface of the first cleaning ozzle is 45~60 °, to increase described the
Adhesion strength between the one cleaning ozzle cleaning solution sprayed and the crystal round fringes, and reduce positioned at the crystal round fringes
The centrifugal force of the cleaning solution.
10. the method according to claim 9 for improving crystal edge defect in photoresist coating procedure, which is characterized in that described
A diameter of 0.6~0.8mm of first cleaning ozzle, the described first flow rate of liquid cleaned in ozzle is 90~100L/min.
11. the method according to claim 9 for improving crystal edge defect in photoresist coating procedure, which is characterized in that step
3) in, the crystal round fringes coated with the photoresist coat are carried out after the steady film at washing using the second cleaning ozzle
Reason, wherein the distance between ozzle mouth edge and described wafer lateral margin of the second cleaning ozzle are 40~50mm, described the
Angle between the injection direction and the crystal column surface of two cleaning ozzles is 30~40 °, the diameter of the second cleaning ozzle
Flow rate of liquid for 0.9~1.2mm, the second cleaning ozzle is 45~85L/min.
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| CN107930917A (en) * | 2017-12-21 | 2018-04-20 | 上海华力微电子有限公司 | A kind of photoresist coating system and method |
| CN110444466A (en) * | 2018-05-06 | 2019-11-12 | 长鑫存储技术有限公司 | Method for cleaning wafer and device in photoresist coating process |
| CN110874018A (en) * | 2018-09-04 | 2020-03-10 | 长鑫存储技术有限公司 | Photoresist coating equipment and coating method |
| CN111604236B (en) * | 2020-06-11 | 2022-07-08 | 沈阳芯源微电子设备股份有限公司 | Glue coating method for ultrathin wafer with taiko ring structure as substrate |
| CN111722472B (en) * | 2020-06-24 | 2023-02-28 | 沈阳芯源微电子设备股份有限公司 | Process for improving coating effect of polyimide material |
| CN114054288B (en) * | 2020-07-31 | 2023-07-18 | 中国科学院微电子研究所 | Control method and system of spreading machine and spreading machine |
| CN112885712B (en) * | 2021-01-21 | 2022-04-26 | 长鑫存储技术有限公司 | Method and apparatus for cleaning wafer edge |
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| US4732785A (en) * | 1986-09-26 | 1988-03-22 | Motorola, Inc. | Edge bead removal process for spin on films |
| JP2843134B2 (en) * | 1990-09-07 | 1999-01-06 | 東京エレクトロン株式会社 | Coating device and coating method |
| US5750317A (en) * | 1994-09-16 | 1998-05-12 | Advanced Micro Devices, Inc. | Process and system for flattening secondary edgebeads on resist coated wafers |
| US7691559B2 (en) * | 2005-06-30 | 2010-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography edge bead removal |
| CN102019266A (en) * | 2009-09-17 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Coating method for coating material |
| CN102486618A (en) * | 2010-12-02 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Method for development of water-resistant surface coating-free immersed photoresist |
| CN103365075B (en) * | 2012-03-26 | 2017-06-23 | 上海华虹宏力半导体制造有限公司 | A kind of photoetching technological method that can eliminate crystal column surface lathe work |
| CN103838087A (en) * | 2012-11-26 | 2014-06-04 | 无锡华润上华科技有限公司 | Method for thickening photoresist |
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