CN103035492B - Manufacturing method for double protection layers in semiconductor device - Google Patents
Manufacturing method for double protection layers in semiconductor device Download PDFInfo
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- CN103035492B CN103035492B CN201210170086.3A CN201210170086A CN103035492B CN 103035492 B CN103035492 B CN 103035492B CN 201210170086 A CN201210170086 A CN 201210170086A CN 103035492 B CN103035492 B CN 103035492B
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Abstract
The invention discloses a manufacturing method for double protection layers in a semiconductor device, which comprises the steps of providing a silicon wafer with a top medal graphics, spin-coating and baking of photosensitive polyimide, spin-coating and baking of non-photosensitive polyimide, spin-coating and baking of photoresist, using of a mask with a protective layer graph for exposure, developing and removing photoresist, non-photosensitive polyimide, and photosensitive polyimide in bottom in exposure area to form a double protective layer structure of polyimide and expose top medal wires, using photoresist stripping liquid to removing photoresist, and solidifying the non-photosensitive polyimide and photosensitive polyimide in the same time. The manufacturing method for double protection layers in the semiconductor device only includes one- time using of lithography, compared with the prior art, the process of one-time lithography and one-time etching is shortened, but also a mask is saved, manufacturing process is effectively simplified, and production cost is saved.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit method of manufacturing technology, particularly relate to the process for making of double shielding layer in a kind of semiconductor device.
Background technology
In semiconductor processing; in order to reduce the various steam and chemical attacks, electromagnetic radiation and mechanical external force damage etc. that natural environment and operational environment cause semiconductor device; usual meeting is after top-level metallic line is carried out; do one deck or two-layer protective layer (being again passivation layer or resilient coating) to be again used for preventing these from corroding and damage, some dielectric materials (as: silicon dioxide (SiO
2), silicon nitride (Si
3n
4), silicon oxynitride (SiON), these dielectric materials after doping and mutual composition between them) and polyimides (Polyimide) material due to its good high-temperature stability, mechanical performance, electric property and chemical stability, be widely used in the protective layer of these semiconductor device of making.
In prior art, in order to the demand of follow-up bonding wire and encapsulation, when needs use double shielding layer, usually the double shielding Rotating fields be made up of one deck dielectric layer 11 and one deck photosensitive polyimide 13 as shown in Figure 1 can all be formed, wherein, layer dielectric layer 11 and photosensitive polyimide 13 are formed at the surface of the silicon chip 1 being formed with top-level metallic figure 2 successively, in order to top-level metallic figure 2 is exposed for follow-up bonding wire and encapsulation, opening 12 and 14 is formed respectively at the dielectric layer 11 of the same area and photosensitive polyimide 13, top-level metallic figure 2 exposes and is used for follow-up bonding wire and encapsulation by opening 12 and 14, wherein the size of underlying dielectric protective layer opening 12 is less than the size of photosensitive polyimide opening 14 above it.
As shown in Figure 2, be the process for making flow chart of double shielding layer in existing semiconductor device.Form above-mentioned double shielding Rotating fields, in existing semiconductor device, the process for making of double shielding layer comprises the steps: that (1) is making the silicon chip 1 somatomedin protective layer 11 of top-level metallic figure 2; (2) spin coating of photoresist, baking; (3) mask plate with dielectric layer opening figure is used to expose; (4) silicon chip after exposure is developed and toasted; (5) etching forms medium protective layer opening 12; (6) photoresist is removed; (7) spin coating of photosensitive polyimide 13, baking; (8) mask plate with polyimide layer opening figure is used to expose; (9) development and baking form photosensitive polyimide layer opening 14; (10) polyimide curing.
As from the foregoing, in existing process for making, use the mask plate of two pieces of different mask plates and step (3) and step (8), come through the photoetching of Twi-lithography and step (3) and step (8) and the process of the once etching of etching and step (5), this technique is because will use two pieces of lithography mask versions and Twi-lithography, complex process, cost is also higher.
Summary of the invention
Technical problem to be solved by this invention is to provide the process for making of double shielding layer in a kind of semiconductor device; the process can saved a photoetching and once etch; also can save one piece of mask plate, the effective simplification of flowsheet of energy, saves production cost simultaneously.
For solving the problems of the technologies described above, in semiconductor device provided by the invention, to comprise step as follows for the process for making of double shielding layer:
Step one, the silicon chip providing to make top-level metallic figure.
Step 2, the spin coating that described silicon chip carries out photosensitive polyimide, baking.
Step 3, the spin coating that described photosensitive polyimide carries out non-photosensitive polyimides, baking.
Step 4, on described non-photosensitive polyimides, carry out spin coating, the baking of photoresist.
The mask plate that step 5, use have protective layer figure exposes.
Step 6, adopt developing process to remove the described photosensitive polyimide of the described photoresist of exposure area, described non-photosensitive polyimides and bottom simultaneously; form the double shielding Rotating fields that non-photosensitive polyimides opening size is greater than photosensitive polyimide opening size, and top-level metallic line is exposed.
Step 7, with photoresist stripper are peeled off and are removed described photoresist.
Step 8, described non-photosensitive polyimides and described photosensitive polyimide to be solidified simultaneously.
Further improvement is, in step 2, described photosensitive polyimide has light sensitivity to any one light in the ArF of G-line, the I-line of wavelength 365 nanometer of wavelength 436 nanometer, the KrF of wavelength 248 nanometer and wavelength 193 nanometer; Tetramethyl oxyammonia developer solution can be dissolved in after any one light exposure of described photosensitive polyimide in the ArF of G-line, the I-line of wavelength 365 nanometer of wavelength 436 nanometer, the KrF of wavelength 248 nanometer and wavelength 193 nanometer.
Further improvement is, in step 2, the baking temperature of described photosensitive polyimide is 80 DEG C ~ 140 DEG C, and baking time is 0.5 minute ~ 10 minutes.
Further improvement is, in step 2, described photosensitive polyimide spin coating, to toast later thickness be 1 micron ~ 20 microns.
Further improvement is, in step 3, described non-photosensitive polyimides does not have light sensitivity to any one light in the ArF of G-line, the I-line of wavelength 365 nanometer of wavelength 436 nanometer, the KrF of wavelength 248 nanometer and wavelength 193 nanometer; Described non-photosensitive polyimides can be dissolved in tetramethyl oxyammonia developer solution.
Further improvement is, in step 3, the baking temperature of described non-photosensitive polyimides is 80 DEG C ~ 140 DEG C, and baking time is 0.5 minute ~ 10 minutes.
Further improvement is, in step 3, the spin coating of described non-photosensitive polyimides, to toast later thickness be 1 micron ~ 10 microns.
Further improvement is, in step 4, and the G-line of the type of described photoresist to be its exposure wavelength be 436 nanometers, any one in the I-line of 365 nanometers, the KrF of 248 nanometers and the ArF of 193 nanometers.
Further improvement is, in step 4, described photoresist spin coating, to toast later thickness be 1 micron ~ 20 microns.
Further improvement is, in step 6, time of described development be 10 second ~ 500 seconds.
Further improvement is, in step 6, and larger than the single side size of described photosensitive polyimide opening 1 micron ~ 20 microns of the single side size of described non-photosensitive polyimides opening.
Further improvement is, the photoresist lift off liquid described in step 7 can peel off removal photoresist, but can not peel off removal non-photosensitive polyimides and unexposed photosensitive polyimide.Described photoresist lift off liquid is 1-Methoxy-2-propyl acetate, propylene glycol monomethyl ether, the combination of 1-Methoxy-2-propyl acetate and propylene glycol first.
Further improvement is, in step 8, the curing temperature of described non-photosensitive polyimides and described photosensitive polyimide is 200 DEG C ~ 500 DEG C, and curing time is 30 minutes ~ 120 minutes.
The inventive method is by first being formed from top to bottom successively by photoresist, the trilamellar membrane structure of non-photosensitive polyimides and photosensitive polyimide composition, recycling non-photosensitive polyimides is to the penetrability of exposure light, after a UV-irradiation, make photoresist and photosensitive polyimide expose simultaneously form latent image (what namely become dissolves in developer solution), due to developer solution to non-photosensitive polyimides have isotropic development characteristic, so non-photosensitive polyimides opening size can be greater than photosensitive polyimide opening size after development, and the double-deck polyimide covercoat needed for final formation, use one piece of mask plate in the process of the present invention, carry out the opening that a photoetching just can form double shielding layer, compared to the prior art, the process that the inventive method can be saved a photoetching and once be etched, also can save one piece of mask plate simultaneously, the effective simplification of flowsheet of energy, save production cost.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1 is the structural representation of double shielding layer in existing semiconductor device;
Fig. 2 is the process for making flow chart of double shielding layer in existing semiconductor device;
Fig. 3 is the process for making flow chart of double shielding layer in embodiment of the present invention semiconductor device;
Fig. 4 A-Fig. 4 G is the structural representation of device in each step of embodiment of the present invention method.
Embodiment
As shown in Figure 3 and Figure 4, in embodiment of the present invention semiconductor device, the process for making of double shielding layer comprises the steps:
Step one, as shown in Figure 4 A, provides the silicon chip 1 that has made top-level metallic figure 2; Described metallic pattern 2 is used for when subsequent device encapsulates being connected with metal lead wire, and described silicon chip 1 has comprised the various semiconductor device be made through traditional semiconductor technology.
Step 2, as shown in Figure 4 B, described silicon chip 1 carries out spin coating, the baking of photosensitive polyimide 3; Described photosensitive polyimide 3, refer to its G-line to wavelength 436 nanometer, the I-line of wavelength 365 nanometer, any one light in the KrF of wavelength 248 nanometer and the ArF of wavelength 193 nanometer has light sensitivity, and described photosensitive polyimide 3 can be dissolved in conventional tetramethyl oxyammonia (TMAH) developer solution after the light exposure of above-mentioned wavelength, the baking temperature of described photosensitive polyimide 3 is 80 DEG C-140 DEG C, and baking time is 0.5 minute-10 minutes.Described photosensitive polyimide spin coating, to toast later thickness be 1 micron-20 microns.
Step 3, as shown in Figure 4 C, described photosensitive polyimide 3 carries out spin coating, the baking of non-photosensitive polyimides 4, described non-photosensitive polyimides 4, refer to its G-line to wavelength 436 nanometer, the I-line of wavelength 365 nanometer, any one light in the KrF of wavelength 248 nanometer and the ArF of wavelength 193 nanometer does not have light sensitivity, owing to not having light sensitivity to the light of above-mentioned wavelength, so described non-photosensitive polyimides 4 before exposure after chemical property do not change, conventional tetramethyl oxyammonia (TMAH) developer solution can both be dissolved in, the baking temperature of described non-photosensitive polyimides 4 is 80 DEG C-140 DEG C, baking time is 0.5 minute-10 minutes, in order to ensure the penetration capacity of exposure light source, the spin coating of described non-photosensitive polyimides 4, toast later thickness and had better not be greater than 10 microns, preferred thickness is 1 micron-10 microns.
Step 4, as shown in Figure 4 D, described non-photosensitive polyimides 4 carries out spin coating, the baking of photoresist 5; The G-line of the type of described photoresist 5 to be its exposure wavelengths be 436 nanometers, any one in the I-line of 365 nanometers, the KrF of 248 nanometers and the ArF of 193 nanometers.Described photoresist 5 spin coating, to toast later thickness be 1 micron-20 microns.
Step 5, as shown in Figure 4 E, the mask plate (for illustrating in figure) with protective layer figure is used to expose the silicon chip 1 completing above-mentioned steps two to step 4, the photoresist 5 of the superiors is made photochemical reaction to occur and form latent image in exposure area 6, exposure light can penetrate non-photosensitive polyimides 4 and arrive on photosensitive polyimide 3 simultaneously, thus make photosensitive polyimide 3 also photochemical reaction occur and form latent image in exposure area 7, so after completing above-mentioned exposure process, the photoresist of photoresist exposure area 6 and the photosensitive polyimide of photosensitive polyimide exposure area 7 all become and dissolve in developer solution.
Step 6, as illustrated in figure 4f, the silicon chip 1 completing above-mentioned steps two to step 5 is developed, developing time was 10 seconds in second-500, with the photosensitive polyimide of the photoresist and photosensitive polyimide exposure area 7 of removing photoresist exposure area 6, form photoresist opening 8 and photosensitive polyimide opening 10, and the line of top-level metallic figure 2 is exposed, and for non-photosensitive polyimides 4, because developer solution is to isotropic development capability of non-photosensitive polyimides 4, namely developer solution is to while the longitudinal direction development of non-photosensitive polyimides 4, also laterally can develop to it, and development capability is the same, so the non-photosensitive polyimides opening 9 of the inverted trapezoidal shown in Fig. 4 F can be formed after development, and opening size can be greater than the size of photosensitive polyimide opening 10, by controlling developing time, larger than the single side size of described photosensitive polyimide opening 10 1 micron-20 microns of the single side size of described non-photosensitive polyimides opening 9 can be made, monolateral boost value is as shown in the mark a in Fig. 4 F.
Step 7, as shown in Figure 4 G, stripper is peeled off and is removed photoresist 5 with photoresist; Described photoresist lift off liquid can be peeled off and remove photoresist 5, but can not peel off removal non-photosensitive polyimides and unexposed photosensitive polyimide.Preferably, described photoresist lift off liquid is 1-Methoxy-2-propyl acetate (PGMEA) or propylene glycol monomethyl ether (PGME) or its combination.
Step 8, as shown in Figure 4 G, solidify non-photosensitive polyimides 3 and photosensitive polyimide 4, its curing temperature is 200 DEG C-500 DEG C, and curing time is 30 minutes-120 minutes simultaneously.
From above-mentioned steps, the embodiment of the present invention is first formed from top to bottom successively by photoresist, the trilamellar membrane structure of non-photosensitive polyimides and photosensitive polyimide composition, utilize non-photosensitive polyimides to the penetrability of exposure light, after a UV-irradiation, make photoresist and photosensitive polyimide expose formation latent image simultaneously, due to developer solution to non-photosensitive polyimides have isotropic development characteristic, so non-photosensitive polyimides opening size can be greater than photosensitive polyimide opening size after development, and the double-deck polyimide covercoat needed for final formation.Contrast existing process method flow chart 2 and embodiment of the present invention process method flow chart 3 known, a photoetching is only employed in embodiment of the present invention process flow process, and employ double exposure in existing process flow process and once etch, therefore the process that present invention saves a photoetching and once etch, also save one piece of mask plate simultaneously, effectively simplify technological process, save production cost.
Above by specific embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (12)
1. the process for making of double shielding layer in semiconductor device, is characterized in that, comprise step as follows:
Step one, the silicon chip providing to make top-level metallic figure;
Step 2, the spin coating that described silicon chip carries out photosensitive polyimide, baking;
Step 3, the spin coating that described photosensitive polyimide carries out non-photosensitive polyimides, baking;
Step 4, on described non-photosensitive polyimides, carry out spin coating, the baking of photoresist;
The mask plate that step 5, use have protective layer figure exposes;
Step 6, adopt developing process to remove the described photosensitive polyimide of the described photoresist of exposure area, described non-photosensitive polyimides and bottom simultaneously, form the double shielding Rotating fields that non-photosensitive polyimides opening size is greater than photosensitive polyimide opening size, and top-level metallic line is exposed;
Step 7, with photoresist stripper are peeled off and are removed described photoresist;
Step 8, described non-photosensitive polyimides and described photosensitive polyimide to be solidified simultaneously.
2. the method for claim 1, it is characterized in that: in step 2, described photosensitive polyimide has light sensitivity to any one light in the ArF of G-line, the I-line of wavelength 365 nanometer of wavelength 436 nanometer, the KrF of wavelength 248 nanometer and wavelength 193 nanometer; Tetramethyl oxyammonia developer solution can be dissolved in after any one light exposure of described photosensitive polyimide in the ArF of G-line, the I-line of wavelength 365 nanometer of wavelength 436 nanometer, the KrF of wavelength 248 nanometer and wavelength 193 nanometer.
3. the method for claim 1, is characterized in that: in step 2, and the baking temperature of described photosensitive polyimide is 80 DEG C ~ 140 DEG C, and baking time is 0.5 minute ~ 10 minutes.
4. the method for claim 1, is characterized in that: in step 2, and described photosensitive polyimide spin coating, to toast later thickness be 1 micron ~ 20 microns.
5. the method for claim 1, it is characterized in that: in step 3, described non-photosensitive polyimides does not have light sensitivity to any one light in the ArF of G-line, the I-line of wavelength 365 nanometer of wavelength 436 nanometer, the KrF of wavelength 248 nanometer and wavelength 193 nanometer; Described non-photosensitive polyimides can be dissolved in tetramethyl oxyammonia developer solution.
6. the method for claim 1, is characterized in that: in step 3, and the baking temperature of described non-photosensitive polyimides is 80 DEG C ~ 140 DEG C, and baking time is 0.5 minute ~ 10 minutes.
7. the method for claim 1, is characterized in that: in step 3, and the spin coating of described non-photosensitive polyimides, to toast later thickness be 1 micron ~ 10 microns.
8. the method for claim 1, is characterized in that: in step 4, the G-line of the type of described photoresist to be its exposure wavelength be 436 nanometers, any one in the I-line of 365 nanometers, the KrF of 248 nanometers and the ArF of 193 nanometers.
9. the method for claim 1, is characterized in that: in step 6, time of described development be 10 second ~ 500 seconds.
10. the method for claim 1, is characterized in that: in step 6, larger than the single side size of described photosensitive polyimide opening 1 micron ~ 20 microns of the single side size of described non-photosensitive polyimides opening.
11. the method for claim 1, is characterized in that: the photoresist lift off liquid described in step 7 can peel off removal photoresist, but can not peel off removal non-photosensitive polyimides and unexposed photosensitive polyimide.
12. methods as claimed in claim 11, is characterized in that: described photoresist lift off liquid is 1-Methoxy-2-propyl acetate, propylene glycol monomethyl ether, the combination of 1-Methoxy-2-propyl acetate and propylene glycol monomethyl ether.
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| CN104570593B (en) * | 2013-10-29 | 2019-05-31 | 中芯国际集成电路制造(上海)有限公司 | The photolithography method of coating material |
| JP2015090380A (en) * | 2013-11-05 | 2015-05-11 | ソニー株式会社 | Dry film photoresist, method for manufacturing dry film photoresist, method for forming metal pattern and electronic component |
| CN104261344B (en) * | 2014-09-04 | 2016-06-29 | 北方广微科技有限公司 | Polyimide coating and baking method |
| CN108364857B (en) * | 2018-02-28 | 2021-01-12 | 中国电子科技集团公司第十三研究所 | Preparation method of semiconductor chip protective layer and semiconductor chip |
| SE541523C2 (en) * | 2018-04-03 | 2019-10-29 | Graphensic Ab | Electrical contacts for low dimensional materials |
| CN112652522B (en) * | 2020-07-23 | 2022-05-03 | 腾讯科技（深圳）有限公司 | Photoresist structure, patterned deposition layer, semiconductor chip and manufacturing method thereof |
| CN112271133A (en) * | 2020-09-25 | 2021-01-26 | 华东光电集成器件研究所 | Metal stripping method based on three layers of glue |
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| CN1427458A (en) * | 2001-12-17 | 2003-07-02 | 三菱电机株式会社 | Method for mfg. semiconductor device |
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| JP3995253B2 (en) * | 2004-09-28 | 2007-10-24 | Ｔｄｋ株式会社 | Method for forming photosensitive polyimide pattern and electronic device having the pattern |
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