CN102414849A - 发光二极管以及用于制造发光二极管的方法 - Google Patents

发光二极管以及用于制造发光二极管的方法 Download PDF

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Publication number
CN102414849A
CN102414849A CN2010800185563A CN201080018556A CN102414849A CN 102414849 A CN102414849 A CN 102414849A CN 2010800185563 A CN2010800185563 A CN 2010800185563A CN 201080018556 A CN201080018556 A CN 201080018556A CN 102414849 A CN102414849 A CN 102414849A
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China
Prior art keywords
semiconductor body
emitting diode
light
described light
supporting mass
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Pending
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CN2010800185563A
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English (en)
Chinese (zh)
Inventor
文森特·格罗利尔
马格纳斯·阿尔斯泰特
米卡埃尔·阿尔斯泰特
迪特尔·艾斯勒
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN102414849A publication Critical patent/CN102414849A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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CN2010800185563A 2009-04-28 2010-03-25 发光二极管以及用于制造发光二极管的方法 Pending CN102414849A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009019161A DE102009019161A1 (de) 2009-04-28 2009-04-28 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009019161.5 2009-04-28
PCT/EP2010/053942 WO2010124915A1 (de) 2009-04-28 2010-03-25 Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Publications (1)

Publication Number Publication Date
CN102414849A true CN102414849A (zh) 2012-04-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800185563A Pending CN102414849A (zh) 2009-04-28 2010-03-25 发光二极管以及用于制造发光二极管的方法

Country Status (7)

Country Link
US (1) US8796714B2 (cg-RX-API-DMAC10.html)
EP (1) EP2425464A1 (cg-RX-API-DMAC10.html)
JP (1) JP2012525690A (cg-RX-API-DMAC10.html)
KR (1) KR20120011056A (cg-RX-API-DMAC10.html)
CN (1) CN102414849A (cg-RX-API-DMAC10.html)
DE (1) DE102009019161A1 (cg-RX-API-DMAC10.html)
WO (1) WO2010124915A1 (cg-RX-API-DMAC10.html)

Cited By (2)

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CN107078193A (zh) * 2014-10-27 2017-08-18 皇家飞利浦有限公司 定向发光装置及其制造方法
CN110998877A (zh) * 2017-07-13 2020-04-10 欧司朗Oled股份有限公司 光电子器件和用于制造光电子器件的方法

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US9000461B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic element and manufacturing method thereof
JP2011071272A (ja) 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
KR101194844B1 (ko) 2010-11-15 2012-10-25 삼성전자주식회사 발광소자 및 그 제조방법
JP5325197B2 (ja) * 2010-11-30 2013-10-23 豊田合成株式会社 発光装置およびその製造方法
JP5777879B2 (ja) * 2010-12-27 2015-09-09 ローム株式会社 発光素子、発光素子ユニットおよび発光素子パッケージ
DE102011012298A1 (de) * 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
JP5887638B2 (ja) 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
DE102011077898A1 (de) * 2011-06-21 2012-12-27 Osram Ag LED-Leuchtvorrichtung und Verfahren zum Herstellen einer LED-Leuchtvorrichtung
DE102011114641B4 (de) * 2011-09-30 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102014105839A1 (de) * 2014-04-25 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2016120400A1 (en) * 2015-01-30 2016-08-04 Osram Opto Semiconductors Gmbh Method for producing a semiconductor component and semiconductor component
US10770440B2 (en) * 2017-03-15 2020-09-08 Globalfoundries Inc. Micro-LED display assembly
DE102017119344A1 (de) * 2017-08-24 2019-02-28 Osram Opto Semiconductors Gmbh Träger und Bauteil mit Pufferschicht sowie Verfahren zur Herstellung eines Bauteils
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
KR102186574B1 (ko) 2019-05-29 2020-12-04 한국산업기술대학교산학협력단 발광 다이오드
KR102375592B1 (ko) * 2020-09-03 2022-03-21 한국공학대학교산학협력단 저저항 발광 다이오드

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US6878563B2 (en) 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
JP2002170989A (ja) * 2000-12-04 2002-06-14 Sharp Corp 窒化物系化合物半導体発光素子
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
JP4356723B2 (ja) * 2001-07-24 2009-11-04 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
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DE10148227B4 (de) 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
JP2004297095A (ja) 2001-11-19 2004-10-21 Sanyo Electric Co Ltd 化合物半導体発光素子の製造方法
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DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107078193A (zh) * 2014-10-27 2017-08-18 皇家飞利浦有限公司 定向发光装置及其制造方法
CN107078193B (zh) * 2014-10-27 2019-11-22 亮锐控股有限公司 定向发光装置及其制造方法
CN110998877A (zh) * 2017-07-13 2020-04-10 欧司朗Oled股份有限公司 光电子器件和用于制造光电子器件的方法
CN110998877B (zh) * 2017-07-13 2023-08-15 欧司朗Oled股份有限公司 光电子器件和用于制造光电子器件的方法

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Publication number Publication date
KR20120011056A (ko) 2012-02-06
DE102009019161A1 (de) 2010-11-04
US20120112226A1 (en) 2012-05-10
EP2425464A1 (de) 2012-03-07
WO2010124915A1 (de) 2010-11-04
US8796714B2 (en) 2014-08-05
JP2012525690A (ja) 2012-10-22

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Application publication date: 20120411