CN102403264B - 金属栅mos器件的接触孔刻蚀方法 - Google Patents
金属栅mos器件的接触孔刻蚀方法 Download PDFInfo
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- CN102403264B CN102403264B CN201010285797.6A CN201010285797A CN102403264B CN 102403264 B CN102403264 B CN 102403264B CN 201010285797 A CN201010285797 A CN 201010285797A CN 102403264 B CN102403264 B CN 102403264B
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- contact hole
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CN201010285797.6A CN102403264B (zh) | 2010-09-17 | 2010-09-17 | 金属栅mos器件的接触孔刻蚀方法 |
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CN201010285797.6A CN102403264B (zh) | 2010-09-17 | 2010-09-17 | 金属栅mos器件的接触孔刻蚀方法 |
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CN102403264A CN102403264A (zh) | 2012-04-04 |
CN102403264B true CN102403264B (zh) | 2014-03-12 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US9202751B2 (en) * | 2014-04-07 | 2015-12-01 | Globalfoundries Inc. | Transistor contacts self-aligned in two dimensions |
CN110556298A (zh) * | 2019-08-26 | 2019-12-10 | 上海新微技术研发中心有限公司 | 场效应晶体管的制造方法 |
CN113644110B (zh) * | 2020-05-11 | 2024-07-02 | 北京华碳元芯电子科技有限责任公司 | 晶体管及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1885560A (zh) * | 2005-06-22 | 2006-12-27 | 国际商业机器公司 | 控制金属栅极叠层中平带/阈值电压的方法及其结构 |
CN1902749A (zh) * | 2003-12-29 | 2007-01-24 | 英特尔公司 | 具有金属和硅化物栅电极的cmos器件及其制作方法 |
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US6861317B1 (en) * | 2003-09-17 | 2005-03-01 | Chartered Semiconductor Manufacturing Ltd. | Method of making direct contact on gate by using dielectric stop layer |
US7365009B2 (en) * | 2006-01-04 | 2008-04-29 | United Microelectronics Corp. | Structure of metal interconnect and fabrication method thereof |
US7759262B2 (en) * | 2008-06-30 | 2010-07-20 | Intel Corporation | Selective formation of dielectric etch stop layers |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1902749A (zh) * | 2003-12-29 | 2007-01-24 | 英特尔公司 | 具有金属和硅化物栅电极的cmos器件及其制作方法 |
CN1885560A (zh) * | 2005-06-22 | 2006-12-27 | 国际商业机器公司 | 控制金属栅极叠层中平带/阈值电压的方法及其结构 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130621 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Effective date: 20130621 |
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