CN102402130B - Exposure device and light source device - Google Patents
Exposure device and light source device Download PDFInfo
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- CN102402130B CN102402130B CN201110281454.7A CN201110281454A CN102402130B CN 102402130 B CN102402130 B CN 102402130B CN 201110281454 A CN201110281454 A CN 201110281454A CN 102402130 B CN102402130 B CN 102402130B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
The invention provides an exposure device and a light source device, featuring less power consumption and long service lifetime and being capable of efficiently emitting the light of required wavelength area with the required light amount. The light source unit (41) comprises a first LED array (411), a first lens array (412), a second LED array (413), a second lens array (414), a color selective mirror (415), a third lens array (416), and a first imaging optical system (417), wherein the first LED array (411) emits the light having central wavelength of 385nm; the second LED array (413) emits the light having central wavelength of 365nm; and the color selective mirror (415) overlaps the image of the luminous part (413c) of the second LED array (413) upon the image of the luminous part (411c) of the first LED array.
Description
Technical field
The present invention relates to exposure device and light supply apparatus, in more detail, relate to the light supply apparatus that is applied to the exposure device of used in electronic industry printed circuit board (PCB), semiconductor or liquid crystal display manufacture and is used in these exposure devices etc.
Background technology
For example, in the treatment process in the printed circuit board (PCB) of used in electronic industry or semiconductor wafer, liquid crystal display manufacture with glass substrate etc., general use utilized the surface of photoetching process (photolithography) to portray patterning technique.In the past, for example, in the manufacturing process of printed circuit board (PCB), on printed circuit board (PCB), form photosensitive material (thering is photosensitive resin etc.) overlay film by methods such as coating or laminations (laminate), expose across the photomask that has formed desirable pattern, thereby form pattern on photosensitive material overlay film.
In recent years, also use and be called the Exposure mode of directly describing, this is called the Exposure mode of directly describing and does not use photomask, but is exposed and directly described pattern by the light that uses for example DMD of optical modulation element (Digital Micromirror Device) to be modulated into.
Patent documentation 1: TOHKEMY 2003-332221 communique
Patent documentation 2: TOHKEMY 2006-133635 communique
In the exposure device of the mode of directly describing shown in patent documentation 1, use lamp as light source, but common the used extra-high-pressure mercury vapour lamp of this device is large-scale, has the problem that consumed power is large, the life-span is short.Therefore, also proposed to use as shown in patent documentation 2 consumed power is few and the life-span is long light emitting diode (LED) as light source.
But, sometimes according to the characteristic of the photosensitive material as exposure object thing, require to irradiate the light of wider wavelength region may, if use the narrow LED of wavelength region may of light irradiation just can not obtain desirable characteristic, cause the problem that can not portray well pattern.For example, in the exposure of solder mask (solder resist), need to irradiate near the light of the wider wavelength region may of 360～390nm, there is the light of the LED of the single wavelength of peak value (peak) if therefore only irradiate comfortable 360nm, can not expose fully, the pattern section that has solder mask becomes the bad of back taper shape etc.
To this, in the light source of recording at patent documentation 2, two kinds of LED of the mixed light that sends different wave length are also expected, if but the minimizing of the LED quantity of each wavelength just can not obtain this required sufficient light quantity of exposing.
Summary of the invention
The present invention proposes in view of the above problems, and object is to provide few and life-span of consumed power long and can be by the light of required wavelength region may with required light quantity light supply apparatus and the exposure device of outgoing expeditiously.
The light supply apparatus that technical scheme one is recorded, is characterized in that, has: the first array of source, be arranged with multiple light source components, and this light source component has the illuminating part of the light of outgoing the first wavelength characteristic; First lens array, is arranged with multiple lens, and these lens form the intensified image of the illuminating part of each light source component of above-mentioned the first array of source; Secondary light source array, is arranged with multiple light source components, and this light source component has the illuminating part of the light of outgoing second wave length characteristic; The second lens arra, is arranged with multiple lens, and these lens form the intensified image of the illuminating part of each light source component of above-mentioned secondary light source array; Optics synthin, the picture of illuminating part of above-mentioned the first array of source and the picture overlaid of the illuminating part of the above-mentioned secondary light source array that above-mentioned the second lens arra forms that above-mentioned first lens array is formed, thus form synthesized image; And uniformization element, the light beam of the synthesized image of above-mentioned optics synthin synthesized is become have the light beam of uniform illuminance to carry out outgoing.
The light supply apparatus that technical scheme two is recorded, on the basis of the light supply apparatus of recording in technical scheme 1, it is characterized in that also having: the 3rd lens arra, makes the chief ray of light beam of the synthesized image of each illuminating part of each light source component that above-mentioned optics synthin forms parallel with optical axis; The first imaging optical system, is the optical system of the both sides heart far away, for the incident end to above-mentioned uniformization element by the above-mentioned synthesized image reduced projection from above-mentioned the 3rd lens arra outgoing.
The light supply apparatus that technical scheme three is recorded, on the basis of the light supply apparatus of recording in technical scheme one, it is characterized in that, above-mentioned first lens array amplifies the illuminating part of each light source component of above-mentioned the first array of source the size of the arrangement pitches that is projected as this light source component, and above-mentioned the second lens arra amplifies the illuminating part of each light source component of above-mentioned secondary light source array the size of the arrangement pitches that is projected as this light source component.
The light supply apparatus that technical scheme four is recorded, on the basis of the light supply apparatus of recording in technical scheme one, is characterized in that, also has: the second imaging optical system, it is the field of illumination to regulation by the light beam projecting of above-mentioned uniformization element outgoing.
The light supply apparatus that technical scheme five is recorded, on the basis of the light supply apparatus of recording in technical scheme one, is characterized in that, above-mentioned uniformization element is integral optical system.
The light supply apparatus that technical scheme six is recorded, on the basis of the light supply apparatus of recording in technical scheme one, is characterized in that, above-mentioned optics synthin is dichronic mirror.
The invention that technical scheme seven is recorded is a kind of exposure device, it is characterized in that, has: in technical scheme one to six, any one is recorded light supply apparatus; Optical modulation element, it is thrown light on by this light supply apparatus; Projection optical system, it is mapped to the illumination after above-mentioned optical modulation element modulation on rendered object thing; And scanning mechanism, it relatively moves above-mentioned projection optical system and above-mentioned rendered object thing, thus above-mentioned rendered object thing is scanned.
The invention that technical scheme eight is recorded is a kind of exposure device, it is characterized in that, has: the light supply apparatus that technical scheme six is recorded; Optical modulation element, it is thrown light on by this light supply apparatus; Projection optical system, it is mapped to the illumination after above-mentioned optical modulation element modulation on the rendered object thing that is formed with solder mask overlay film, and scanning mechanism, it relatively moves above-mentioned projection optical system and above-mentioned rendered object thing, scans thus to scanning above-mentioned rendered object thing; The light-emitting component of above-mentioned the first array of source has illuminating part, and this illuminating part outgoing has the light of peak value near wavelength 385nm; The light-emitting component of above-mentioned secondary light source array has illuminating part, and this illuminating part outgoing has the light of peak value near wavelength 365nm; Above-mentioned dichronic mirror is configured to make the light transmission from above-mentioned the first array of source, and makes the light reflection from above-mentioned secondary light source array, forms thus synthesized image.
According to the invention of technical scheme one to six record, can obtain consuming that electric power is few and the life-span is long, and the light of the wavelength region may can outgoing needing the light supply apparatus exposing.
The invention of recording according to technical scheme two, the especially efficiently light beam of the desirable shape of outgoing.
The invention of recording according to technical scheme seven, can obtain consuming that electric power is few and the life-span is long, and the light of the wavelength region may can outgoing needing the exposure device exposing.
The invention of recording according to technical scheme eight, especially can obtain the light of the wavelength characteristic can outgoing with the exposure the best to solder mask the exposure device exposing.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the exposure device that represents that embodiments of the present invention relate to.
Fig. 2 is the figure that represents DMD.
Fig. 3 is the schematic stereographic map that represents a part for lamp optical system.
Fig. 4 is the side view of light source cell.
Fig. 5 is the side view that a part for intercepting light source cell represents.
Fig. 6 A, Fig. 6 B represent the outward appearance of LED chip and the figure of projection image thereof.
Fig. 7 is the stereographic map that a part for intercepting light source cell represents.
Fig. 8 is the figure that represents point optical wavelength characteristics of emergent light.
Embodiment
<1. the structure of exposure device and the summary > of action
Fig. 1 is the schematic diagram of the structure of the exposure device 1 that represents that one embodiment of the present invention relates to.In Fig. 1, be represented by dotted lines the profile of device for the internal structure of indication device.Exposure device 1 is (following at printed circuit board (PCB), referred to as circuit board) pattern of exposure regulation carries out pattern formation on 9 device, this printed circuit board (PCB) refers to, by applying or be laminated to the printed circuit board (PCB) that is formed with solder mask overlay film in printed circuit board surface, this exposure device 1 has the objective table 2 of holding circuit plate 9, make objective table travel mechanism 31 mobile in the Y-direction of objective table 2 in Fig. 1, to the head 4 of circuit board 9 outgoing beams, make head moving mechanism 32 mobile on the directions X of head 4 in Fig. 1, with above-mentioned objective table travel mechanism 31, the control part 5 that head 4 and head moving mechanism 32 are connected.
The built-in optical system that comprises light source cell 41 and DMD42 of head 4, this light source cell 41 as described later outgoing has the light beam of provision wavelengths, this DMD42 is provided with and is arranged in cancellate tiny mirror group, head 4 utilizes the tiny mirror group reflection of DMD42 from the light beam of light source cell 41, generate thus the light beam through spatial modulation, circuit board 9 outgoing that then keep to objective table 2 expose and form pattern.
The summary of optical system is described.Light beam by light source cell 41 outgoing imports to catoptron 436 via integrating rod (rodintegrator) 433, lens 434a, lens 434b and catoptron 435, and catoptron 436 makes light beam coalescence import to DMD42.Inciding the light beam of DMD42 for example, is irradiated in the tiny mirror group of DMD42 equably with the incident angle of regulation (24 degree).As mentioned above, formed and will import to the lamp optical system 43a of DMD42 from the light of light source cell 41 by light source cell 41, integrating rod 433, lens 434a, lens 434b, catoptron 435 and catoptron 436.
Only by (passing through in the explanation of DMD42 light irradiation described later in prescribed form in the each tiny mirror from DMD42, the posture corresponding with ON (unlatching) state) the light beam (i.e. light beam after spatial modulation) that forms of the reflected light of tiny mirror incide zoom lens (zoom lens) 437, import to projecting lens 439 by catoptron 438 after adjusting multiplying power by zoom lens 437.Then, from the light beam irradiates of projecting lens 439 to the optically region on the circuit board 9 of conjugation of tiny mirror group.Like this, in exposure device 1, form and will import to the projection optical system 43b in the corresponding irradiation region on circuit board 9 from the light of each tiny mirror by zoom lens 437, catoptron 438, projecting lens 439.
Objective table 2 is fixed on moving body one side as the objective table travel mechanism 31 of linear motor, control part 5 is controlled objective table travel mechanism 31, and the irradiation region group of the illuminated light from tiny mirror group (establishing a tiny mirror corresponding to an irradiation region) relatively moves along the Y-direction in Fig. 1 on dry-film resist thus.That is, irradiation region group is relatively fixing with respect to head 4, and by the movement of circuit board 9, irradiation region group moves on circuit board 9.
Head 4 is fixed on moving body one side of head moving mechanism 32, on the sub scanning direction (directions X) vertical with the main scanning direction (Y-direction in Fig. 1) of irradiation region group, intermittently moves.,, whenever main sweep finishes, head moving mechanism 32 moves head 4 starting position to next main sweep on directions X.And by the driving of this objective table travel mechanism 31 and head moving mechanism 32, also expose in the surface of head 4 sweep circuit plates 9.
Fig. 2 is the figure that represents DMD42.DMD42 is the spatial light modulation device with tiny mirror group 422, this tiny mirror group 422 is equally spaced arranged in multiple tiny mirror clathrate and forms (describing with the tiny mirror group that is arranged in the capable N row of M in mutually perpendicular two directions below) on silicon substrate 421, according to the data that are written in the storage unit corresponding with each tiny mirror, each tiny mirror by electrostatic field and tilt regulation angle.
If reset pulse (reset pulse) is imported into DMD42 from control part 5 as shown in Figure 1, each tiny mirror is according to being written to the data in corresponding storage unit, take the diagonal line of reflecting surface as axle, tilts simultaneously with the posture stipulating.Thus, the light beam being irradiated on DMD42 is reflected according to the vergence direction of each tiny mirror, carries out light-struck unlatching (ON) to irradiation region/close (OFF).That is, represent that the tiny mirror of the data of opening receives reset pulse if be written in storage unit, the light that incides this tiny mirror reflects to zoom lens 437, and illumination is mapped to corresponding irradiation region.In addition, if tiny mirror is OFF state, tiny mirror is by the light that enters to shine to the assigned position reflection different from zoom lens 437, and corresponding irradiation region is the state that is not imported into light.
And according to such structure, the surface of circuit board 9 is scanned relatively by head 4, and illuminated light beam after being modulated by DMD42, thereby on the solder mask on circuit board 9 surfaces, form the pattern of regulation.
<2. the detailed construction > of optical system
Next the detailed construction of optical system is described.Fig. 3 is the schematic stereographic map that represents a part of the lamp optical system 43a that comprises light source cell 41, Fig. 4 is the side view of light source cell 41, Fig. 5 is the side view that a part for intercepting light source cell 41 represents, Fig. 6 A, Fig. 6 B represent the outward appearance of LED chip and the figure of projection image thereof, and Fig. 7 is the stereographic map that represents the first LED array 411, first lens array 412 and the 3rd lens arra 416.
Light source cell 41 comprises the first LED array 411, first lens array 412, the second LED array 413, the second lens arra 414, dichronic mirror (dichroic mirror) 415, the 3rd lens arra 416, the first imaging optical system 417.
The first LED array 411 forms by arrange 12 LED chips (LED diode) 411a on circuit board 411b, and this LED chip 411a has the illuminating part of the light of outgoing centre wavelength 385nm (the first wavelength characteristic).The size of LED chip 411a is that 1mm is square, is accommodated in the inside of ceramic package (omitting in diagram).LED chip 411a is not that the square whole surface of 1mm is all luminous, because the reasons such as the impact of the shadow of electrode exist non-luminous part.As shown in Figure 6A, the LED chip 411a of present embodiment, is formed with in the square scope of 0.8mm in surface and in figure, marks the illuminating part 411c that shade represents.For the first LED array 411, in the mode that this LED chip 411a is arranged as to 3 row × 4 row in length and breadth two-dimensionally by 10mm interval (d=10mm in the middle of Fig. 5), the ceramic package of each LED chip 411a is arranged on circuit board 411b.In addition, at the front surface of each LED chip 411a, be provided with for the protection of surperficial cover glass 411d.
The second LED array 413 forms by arrange 12 LED chip 413a on circuit board 413b, and this LED chip 413a has the illuminating part of the light of outgoing centre wavelength 365nm (second wave length characteristic).The structure of this second LED array 413 and LED chip 413a is except the outgoing light wavelength of LED chip 413a, identical with the first LED array 411, LED chip 411a shown in Fig. 5, LED chip 413a is arranged in length and breadth two-dimensionally to the mode of 3 row × 4 row by 10mm spacing, the ceramic package of each LED chip 413a is arranged on circuit board 413b.In addition, at the front surface of each LED chip 413a, be provided with for the protection of surperficial cover glass 413d.
The structure of the second lens arra 414 is identical with above-mentioned first lens array 412, following formation,, by the arrangement of lens combination and LED chip 413a accordingly and be identical 12 i.e. 3 row × 4 row of arranging two-dimensionally in length and breadth, this lens combination forms the picture of the illuminating part 413c of each LED chip 413a of the second LED array 413, from LED chip 413a unilateral observation, for each LED chip 413a, configure by the first lens 414a of biconvex and these two lens combination that lens form of the second lens 414b of plano-convex, and they are assembled in frame 414c.First lens array 412 shown in lens combination and Fig. 5 of these first lens 414a and the second lens 414b similarly, by roughly foursquare the region square 0.8mm at the illuminating part 413c place in LED chip 413a, the size of amplifying the arrangement pitches that projects into LED chip 413a is the square size of 10mm.And the picture of the illuminating part 413c after projection just in time covers the whole surface of each lens 416a that forms the 3rd lens arra 416 described later.
Between the picture of the illuminating part 411c of each LED chip 411a of the first LED array 411 forming at first lens array 412 and this first lens array 412, be obliquely installed dichronic mirror 415, and then across this dichronic mirror 415 the contrary side at first lens array 412, be provided with the second lens arra 414 and the second LED array 413 (in Fig. 5, having omitted the diagram of dichronic mirror 415, the second lens arra 414 etc.).Thus, dichronic mirror 415 is set to, make the light transmission from the first LED array 411 and first lens array 412, and make the light reflection from the second LED array 413 and the second lens arra 414, on the picture with the illuminating part 411c at the first LED array 411, the picture of the illuminating part 413c of overlapping the second LED array 413 synthesizes.Thus, the picture that the synthetic shape by the illuminating part of each LED array 411,413 as becoming as shown in Figure 6B being produced by first lens array 412 and the second lens arra 414 is arranged after amplifying.
In addition, the centre wavelength of the light of the first LED array 411 is 385nm, the centre wavelength of the light of the second LED array 413 is 365nm, because both differences are 20nm left and right, so for they are synthetic, dichronic mirror 415 need to have spectral reflectance (spectrophotometric transmittance) characteristic at the edge of steeper.Because to the incident angle of dichronic mirror 415 incidents being the separation of the 45 degree optical characteristics that can produce PS polarized light component when above and can not obtain precipitous characteristic, so in the present embodiment, make the incident angle of each light all be less than 40 degree.In addition, for the synthetic efficiency of the light that makes two wavelength uprises, the second short wavelength LED array 413 is configured in to the reflection side of dichronic mirror 415, long ripple the first LED array 411 is configured in through side, utilize respectively.
The 3rd lens arra 416 is arranged on the position of the synthesized image of the picture of the first LED array 411 being synthesized by dichronic mirror 415 and the picture of the second LED array 413, makes the chief ray of light beam of incident parallel with optical axis and incide in the first imaging optical system 417 described later.The 3rd lens arra 416 makes the square plano-convex lens 416a of 10mm be arranged as 3 row × 4 row, and each lens arra 416a is the shape (i.e. square) similar to each illuminating part 411c, 413c, and big or small and its synthesized image is roughly the same.
The first imaging optical system 417 is optical systems of the both sides heart far away, comprise first lens 417a, the second lens 417b and the 3rd lens 417c, the first LED array 411 that dichronic mirror 415 is formed and the synthesized image reduced projection of the second LED array 413 are to the incident end of integrating rod 433.From the viewpoint of efficiency, preferably make integrating rod 433 incident end shape with dwindled by the first imaging optical system 417 after the picture of illuminating part of the first LED array 411, the second LED array 413 be roughly just as shape.
And the light of the uniform Illumination Distribution of being exported by the exit end of integrating rod 433, by the second imaging optical system being made up of lens 434a, lens 434b, catoptron 435 and catoptron 436, is irradiated to the field of illumination of the regulation of DMD42.As shown in Figure 8, the light wavelength spectrum that is irradiated to DMD42 becomes by the spectrum after the light of centre wavelength 385nm of the first LED array 411 and the light compositing of the centre wavelength 365nm of the second LED array 413.At this, the turn-on current that each LED array is provided is variable by the control of control part 5, thereby can make the light intensity ratio of two wavelength variable.Thus, the property settings of the light that can will irradiate according to the characteristic of the film as irradiation object obtains carefully, for example, can obtain according to the characteristic of solder mask the shape of desirable pattern section.
<3. the action of exposure device and effect >
Moved on the objective table 2 of exposure device 1 if be formed with the circuit board 9 of solder mask overlay film, control part 5 is controlled objective table travel mechanism 31, head 4, head moving mechanism 32 etc. and is carried out exposure-processed.Now, light source cell 41 is exported the light after the light compositing of the centre wavelength 365nm of the light of the centre wavelength 385nm of the first LED array 411 outgoing and the second LED array 413 outgoing, to DMD42 illumination, and by this light, the solder mask of circuit board 9 is exposed.By controlling turn-on current that each LED array 411,413 is provided, the light of light source cell 41 outgoing becomes the wavelength that adapts with circuit board 9 to be processed and the light of intensity, thereby carries out well exposure.LED chip 411a, the 413a of the light of the required wavelength of the outgoing of sufficient amount can be set in two LED array 411,413, thereby in light source cell 41, can obtain required wavelength and the light of light quantity.
<4. variation >
In the above-described embodiment, after the light of the light of the first LED array 411 and the second LED array 413 is synthetic by dichronic mirror 415, become the heart far away from the 3rd lens arra 416, and dwindled by the first imaging optical system 417, but, if can allow Efficiency Decreasing some, for example can omit the 3rd lens arra 416.In addition, according to the shape of the outgoing beam that light source cell 411 is required, also can omit the first imaging optical system 417.Suppose to omit these both time, make light after dichronic mirror 415 is synthetic be directly incident on the input end of integrating rod 433.
In addition, in the present embodiment, use dichronic mirror 415 in order to synthesize the light of the first LED array 411 and the light of the second LED array 413, but also can utilize the colour splitting prism (dichroic prism) of for example cube formula (cube tepe) to replace dichronic mirror 415.In addition, light wavelength region as required, also can synthesize the light of more than three kinds wavelength, now, as optics synthin, also can use multiple dichronic mirrors 415, or also can use the colour splitting prisms such as cross prisms (cross prism), Philips's formula prism (Phillips type prism), Koster prism (Koester prism).
In addition, at this, use integrating rod 433 as uniformization element.The photoconductive tube (light pipe) of the hollow that also can use the reflecting surface of catoptron to be placed in inner side and to paste, also can use the solid bar of the prism that utilizes total reflection.Also can be that light incident side section shape and exiting side section shape are the roughly taper of similar shape.In addition, also can use fly's-eye lens (fly eye lens) to replace integrating rod 433.In this case, preferably make the roughly similar shape that is shaped as of the shape of each lens of fly's-eye lens and plane of illumination, by being arranged on the chief ray of the first imaging optical system 417 inside and the position of optical axis intersection, can realize uniform Illumination Distribution.
Claims (7)
1. a light supply apparatus, it is the light supply apparatus of the exposure device for form pattern on substrate, it is characterized in that having:
The first array of source, is arranged with multiple light source components, and this light source component has the illuminating part of the light of outgoing the first wavelength characteristic;
First lens array, is arranged with multiple lens, and these lens form the intensified image of the illuminating part of each light source component of above-mentioned the first array of source;
Secondary light source array, is arranged with multiple light source components, and this light source component has the illuminating part of the light of outgoing second wave length characteristic;
The second lens arra, is arranged with multiple lens, and these lens form the intensified image of the illuminating part of each light source component of above-mentioned secondary light source array;
Optics synthin, the picture of illuminating part of above-mentioned the first array of source and the picture overlaid of the illuminating part of the above-mentioned secondary light source array that above-mentioned the second lens arra forms that above-mentioned first lens array is formed, thus form synthesized image; And
Uniformization element, becomes the light beam of the synthesized image of above-mentioned optics synthin synthesized to have the light beam of uniform illuminance to carry out outgoing;
The 3rd lens arra, makes the chief ray of light beam of the synthesized image of each illuminating part of each light source component that above-mentioned optics synthin forms parallel with optical axis;
The first imaging optical system, is the optical system of the both sides heart far away, for the incident end to above-mentioned uniformization element by the above-mentioned synthesized image reduced projection from above-mentioned the 3rd lens arra outgoing.
2. the light supply apparatus of recording according to claim 1, is characterized in that,
Above-mentioned first lens array amplifies the illuminating part of each light source component of above-mentioned the first array of source the size of the arrangement pitches that is projected as this light source component,
Above-mentioned the second lens arra amplifies the illuminating part of each light source component of above-mentioned secondary light source array the size of the arrangement pitches that is projected as this light source component.
3. the light supply apparatus of recording according to claim 1, is characterized in that, also has the second imaging optical system, and this second imaging optical system is the field of illumination to regulation by the light beam projecting of above-mentioned uniformization element outgoing.
4. the light supply apparatus of recording according to claim 1, is characterized in that, above-mentioned uniformization element is integral optical system.
5. the light supply apparatus of recording according to claim 1, is characterized in that, above-mentioned optics synthin is dichronic mirror.
6. an exposure device, is characterized in that, has:
The light supply apparatus that in claim 1 to 5, any one is recorded,
Optical modulation element, it is thrown light on by this light supply apparatus,
Projection optical system, it is mapped to the illumination after above-mentioned optical modulation element modulation on rendered object thing, and
Scanning mechanism, it relatively moves above-mentioned projection optical system and above-mentioned rendered object thing, thus above-mentioned rendered object thing is scanned.
7. an exposure device, is characterized in that, has:
The light supply apparatus that claim 5 is recorded,
Optical modulation element, it is thrown light on by this light supply apparatus,
Projection optical system, it is mapped to the illumination after above-mentioned optical modulation element modulation on the rendered object thing that is formed with solder mask overlay film, and
Scanning mechanism, it relatively moves above-mentioned projection optical system and above-mentioned rendered object thing, thus above-mentioned rendered object thing is scanned;
The light-emitting component of above-mentioned the first array of source has illuminating part, and this illuminating part outgoing has the light of peak value near wavelength 385nm;
The light-emitting component of above-mentioned secondary light source array has illuminating part, and this illuminating part outgoing has the light of peak value near wavelength 365nm;
Above-mentioned dichronic mirror is configured to, and makes the light transmission from above-mentioned the first array of source, and makes the light reflection from above-mentioned secondary light source array, forms thus synthesized image.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010205242A JP5687013B2 (en) | 2010-09-14 | 2010-09-14 | Exposure apparatus and light source apparatus |
| JP2010-205242 | 2010-09-14 |
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| Publication Number | Publication Date |
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| CN102402130A CN102402130A (en) | 2012-04-04 |
| CN102402130B true CN102402130B (en) | 2014-05-28 |
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| CN201110281454.7A Active CN102402130B (en) | 2010-09-14 | 2011-09-14 | Exposure device and light source device |
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| Country | Link |
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| JP (1) | JP5687013B2 (en) |
| KR (1) | KR101313514B1 (en) |
| CN (1) | CN102402130B (en) |
| TW (1) | TWI448833B (en) |
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| JP2014006433A (en) * | 2012-06-26 | 2014-01-16 | Dainippon Screen Mfg Co Ltd | Pattern drawing device |
| US9243761B2 (en) * | 2013-02-28 | 2016-01-26 | Sumitomo Electric Industries, Ltd. | Optical assembly and method for assembling the same, and optical module implemented with optical assembly |
| JP6199591B2 (en) | 2013-04-12 | 2017-09-20 | 株式会社オーク製作所 | Light source apparatus and exposure apparatus |
| KR101532352B1 (en) * | 2013-10-30 | 2015-06-29 | 주식회사 인피테크 | LED light source apparatus for exposure resist and management system for the same |
| JP2015102614A (en) * | 2013-11-22 | 2015-06-04 | セイコーエプソン株式会社 | Display device |
| JP6480680B2 (en) * | 2014-08-02 | 2019-03-13 | 株式会社アドテックエンジニアリング | Illuminance ratio changing method and exposure method |
| JP6529809B2 (en) * | 2015-04-14 | 2019-06-12 | 株式会社サーマプレシジョン | Light irradiation apparatus and exposure apparatus |
| JP6503235B2 (en) * | 2015-06-02 | 2019-04-17 | 株式会社アドテックエンジニアリング | Light source device, exposure apparatus, and light source control method |
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| JP7154603B2 (en) * | 2019-11-13 | 2022-10-18 | フェニックス電機株式会社 | Light source for exposure equipment |
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Also Published As
| Publication number | Publication date |
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| KR20120028803A (en) | 2012-03-23 |
| KR101313514B1 (en) | 2013-10-01 |
| TWI448833B (en) | 2014-08-11 |
| CN102402130A (en) | 2012-04-04 |
| JP2012063390A (en) | 2012-03-29 |
| JP5687013B2 (en) | 2015-03-18 |
| TW201211703A (en) | 2012-03-16 |
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