CN102386160A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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Publication number
CN102386160A
CN102386160A CN2011102561331A CN201110256133A CN102386160A CN 102386160 A CN102386160 A CN 102386160A CN 2011102561331 A CN2011102561331 A CN 2011102561331A CN 201110256133 A CN201110256133 A CN 201110256133A CN 102386160 A CN102386160 A CN 102386160A
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metal film
semiconductor device
wiring
photoresist
forms
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CN102386160B (zh
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右田达夫
江泽弘和
山下创一
永岭公朗
宫田雅弘
盐月龙夫
村西清
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Japanese Businessman Panjaya Co ltd
Kioxia Corp
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Toshiba Corp
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Abstract

公开一种半导体装置及半导体装置的制造方法。根据实施例，设置半导体基板、金属膜、表面改性层和再布线。半导体基板上形成了布线及焊盘电极。金属膜在所述半导体基板上形成。表面改性层在所述金属膜的表层形成，提高与光刻胶图形的贴紧性。再布线隔着所述表面改性层在所述金属膜上形成。

Description

半导体装置及半导体装置的制造方法
关联申请的参照
本申请享受2010年9月3日申请的日本专利申请编号2010-198379及2010年9月22日申请的日本专利申请编号2010-212184的优先权，该日本国专利申请的全部内容在本申请中援用。
技术领域
一般地说，本实施例涉及半导体装置及半导体装置的制造方法。
背景技术
为了实现半导体装置的高集成化和高功能化，要求动作速度的提高和存储器的大容量化。相应地，在半导体基板上的再布线形成过程中，也要求10μm间距以下的微细的再布线。
再布线的间距若微细化，则用于形成再布线图形的光刻胶图形和其基底的贴紧性减少，在光刻胶显影时等引起光刻胶剥离。
发明内容
根据实施例，设置半导体基板、金属膜、表面改性层和再布线。半导体基板上形成了布线及焊盘电极。金属膜在所述半导体基板上形成。表面改性层在所述金属膜的表层形成，提高与光刻胶图形的贴紧性。再布线隔着所述表面改性层在所述金属膜上形成。
附图说明
图1(a)～(e)是第1实施例的半导体装置的制造方法的截面图。
图2(a)～(d)是第1实施例的半导体装置的制造方法的截面图。
图3(a)～(c)是第1实施例的半导体装置的制造方法的截面图。
图4(a)～(b)是第1实施例的半导体装置的制造方法的截面图。
图5(a)～(b)是第1实施例的半导体装置的制造方法的截面图。
图6(a)～(b)是第1实施例的半导体装置的制造方法的截面图。
图7是第1实施例的吸光度不同的光刻胶A、B的表面和底面的曝光量的关系示图。
图8(a)～(e)是第3实施例的半导体装置的制造方法的截面图。
图9(a)～(d)是第3实施例的半导体装置的制造方法的截面图。
图10(a)～(c)是第3实施例的半导体装置的制造方法的截面图。
图11(a)～(b)是第3实施例的半导体装置的制造方法的截面图。
图12(a)～(b)是第3实施例的半导体装置的制造方法的截面图。
图13(a)～(b)是第3实施例的半导体装置的制造方法的截面图。
具体实施方式
以下，参照图面说明实施例的半导体装置及半导体装置的制造方法。另外，这些实施例不限定本发明。
(第1实施例)
图1(a)～(e)、图2(a)～(d)、图3(a)～(c)、图4(a)～(b)、图5(a)～(b)及图6(a)～(b)是第1实施例的半导体装置的制造方法的截面图。
图1(a)中，在基体材料层1上形成焊盘电极2a及布线2b的同时，以覆盖焊盘电极2a及布线2b的方式形成保护膜3。另外，在保护膜3形成使焊盘电极2a露出的开口部3a及使布线2b的一部分露出的开口部3b。
另外，作为基体材料层1，例如，可以采用形成了逻辑电路或DRAM等的集成电路的半导体基板。另外，焊盘电极2a及布线2b的材料例如可以采用以Al或Al为主要成分的金属。另外，保护膜3的材料例如可以采用硅氧化膜或硅酸氮化膜或硅氮化膜等的无机绝缘体。
接着，如图1(b)所示，通过在保护膜3上涂覆感光性树脂等，在保护膜3上形成缓冲层4。另外，作为缓冲层4的材料，例如可以采用聚酰亚胺系树脂。为了减少晶片应力，也可以采用硬化温度比聚酰亚胺系树脂低的丙烯酸系树脂或苯酚系树脂。
接着，如图1(c)所示，采用光刻技术，在缓冲层4形成使焊盘电极2a及布线2b的一部分分别露出的开口部4a、4b。
接着，如图1(d)所示，通过采用溅射、电镀、CVD、ALD或蒸镀等的方法，在焊盘电极2a、布线2b、保护膜3及缓冲层4上形成金属膜5。另外，作为金属膜5，可以采用基底阻挡金属膜5，例如可以采用Ti和其上的Cu的层叠构造。另外，也可以取代Ti，采用TiN、TiW、W、Ta、Cr、Co等的材料。也可以取代Cu，采用Al、Pd、Au、Ag等的材料。
接着，如图1(e)所示，通过旋涂等的方法在金属膜5上形成光刻胶膜6。另外，光刻胶膜6相对于达到与金属膜5的界面(以下，称为基底界面)为止的光，设定成吸光度在80％以下。另外，本发明的吸光度设为用i线波长(365nm)的曝光装置测定的值。另外，光刻胶膜6的膜厚度可设定在1～50μm的范围内。
接着，如图2(a)所示，通过进行光刻胶膜6的曝光及显影，在光刻胶膜6形成开口部6a～6c。另外，开口部6a可在焊盘电极2a上配置，开口部6b可在缓冲层4上配置，开口部6c可在布线2b上配置。另外，形成了开口部6b的光刻胶膜6的宽度可以设为20μm以下。
接着，如图2(b)所示，通过电解电镀在开口部6a～6c埋入第1导体，隔着基底阻挡金属膜5在焊盘电极2a、缓冲层4及布线2b上分别形成再布线7a～7c。而且，通过电解电镀在开口部6a～6c埋入第2导体，在再布线7a～7c上分别形成表面层8a～8c。这里，再布线7a可以用于与焊盘电极2a的连接。再布线7c可以用于与布线2b的连接。再布线7b可以用于缓冲层4上的再布线7a、7c的回绕等。
另外，表面层8a～8c可以采用蚀刻耐性比再布线7a～7c高的材料。例如，再布线7a～7c的材料可以选择以Cu或Cu为主要成分的金属，表面层8a～8c的材料可以从Ni、Mn、Ta、Zn、Cr、Co、Sn及Pb中选择至少一个。另外，再布线7b的宽度优选在20μm以下且再布线7b的一半间距优选在40μm以下。
接着，如图2(c)所示，通过灰化等的方法，除去金属膜5上的光刻胶膜6。
这里，通过将光刻胶膜6的吸光度相对于365nm的波长的光设定成80％以下，在光刻胶膜6的曝光时，可抑制光刻胶膜6的表面的交联度的增大，同时使光刻胶膜6的基底界面的交联度增大。因而，可以抑制光刻胶膜6的表面的过硬化，同时提高光刻胶膜6与基底界面的贴紧性，即使在形成了开口部6b的光刻胶膜6的宽度细的场合，也可以抑制显影时光刻胶膜6的剥离，即使在除此以外的区域存在更宽的光刻胶膜6的场合，也可以在再布线7a～7c形成后除去光刻胶膜6。
另外，光刻胶膜6的残留宽度若在20μm以下，则相对于剥离非常严格，因此优选在20μm以下。一半间距中，优选在40μm以下。
接着，如图2(d)所示，通过以再布线7a～7c为掩模来蚀刻金属膜5，除去再布线7a～7c的周围的金属膜5。
接着，如图3(a)所示，通过在布线2b、缓冲层4及表面层8a～8c上涂覆感光性树脂等，在布线2b、缓冲层4及表面层8a～8c上形成缓冲层9。另外，作为缓冲层9的材料，例如，可以采用聚酰亚胺系树脂。为了减少晶片应力，也可以采用硬化温度比聚酰亚胺系树脂低的丙烯酸系树脂或苯酚系树脂。
接着，如图3(b)所示，通过采用光刻技术，在缓冲层9形成使焊盘电极2a上的表面层8a及布线2b的一部分分别露出的开口部9a、9b。
接着，如图3(c)所示，通过采用溅射、电镀、CVD、ALD或蒸镀等的方法，在布线2b、保护膜3、缓冲层4、9及表面层8a上形成金属膜10。另外，作为金属膜10，例如，可以采用Ti和其上的Cu的层叠构造。
接着，如图4(a)所示，通过采用旋涂等的方法，在金属膜10上形成光刻胶膜11。
接着，如图4(b)所示，通过进行光刻胶膜11的曝光及显影，在光刻胶膜11形成使焊盘电极2a上的表面层8a露出的开口部11a。
接着，如图5(a)所示，通过电解电镀在开口部11a依次埋入阻挡层12及焊接层13、14，隔着金属膜10在表面层8a上形成突出电极。另外，例如，阻挡层12的材料可采用Ni，焊接层13的材料可采用Cu，焊接层14的材料可采用Sn。
接着，如图5(b)所示，通过灰化等的方法，除去金属膜10上的光刻胶膜11。
接着，如图6(a)所示，通过以阻挡层12及焊接层13、14组成的突出电极为掩模，蚀刻金属膜10，除去阻挡层12及焊接层13、14组成的突出电极的周围的金属膜10。
接着，如图6(b)所示，通过回流焊接层13、14，使焊接层13、14合金化，在阻挡层12上形成合金焊接层15组成的突出电极。
以上的工序可在基体材料层1为晶片的状态进行。在以上的工序后，通过使该晶片单片化，可切出半导体芯片。
另外，所述实施例中，说明了突出电极采用焊球的方法，但是也可以采用镍凸点、金凸点或铜凸点等。另外，所述实施例中，作为金属膜5、10，说明了采用Ti和Cu的层叠构造的方法，但是也可以采用Ti或Cu的单体，也可以采用Cr、Pt、W等的单体，也可以采用这些金属的层叠构造。
另外，作为突出电极的接合方法，可以采用焊接接合、合金接合等的金属接合，也可以采用ACF(Anisotropic conductive Film：异向导电膜)接合、NCF(Nonconductive Film：非导电膜)接合、ACP(AnisotropicConductive Paste：异向导电膏)接合、NCP(Nonconductive Paste：非导电膏)接合等。
图7是第1实施例的吸光度不同的光刻胶A、B的表面和底面的曝光量的关系示图。另外，相对于365nm的波长的光，光刻胶A的吸光度设定成81％，光刻胶B的吸光度设定成42％。另外，光刻胶A、B的膜厚度设定成10μm。另外，光刻胶A、B的基底采用Cu膜。
图7中，光刻胶A中，相对于光刻胶B，即使表面的曝光量相同，与基底的界面的曝光量也减少。因而，光刻胶A中，为了提高与基底的贴紧性，若使与基底的界面的曝光量增大，则表面过曝光，发生表面的过硬化。
另一方面，光刻胶B中，可以不增大表面的曝光量，而增大与基底的界面的曝光量，可防止表面的过曝光，并提高与基底的贴紧性。
接着，线&间隔形成3/3μm～15/15μm的一半间距图形，调研第1实施例涉及的吸光度不同的光刻胶A、B的表面曝光量和发生剥离的光刻胶残留宽度的关系。
其结果，例如，为了不剥离地形成5μm宽的光刻胶图形，光刻胶A中，在表面需要600mJ/cm2以上的曝光量，由于发生表面的过硬化，可知光刻胶图形的剥离性减少。
另一方面，光刻胶B中，为了不剥离地形成5μm宽的光刻胶图形，在表面有400mJ/cm2左右的曝光量即可，可以防止表面的过硬化，因此可以防止光刻胶图形的剥离性减少。
而且，调研第1实施例的吸光度不同的光刻胶A、B的底面曝光量和发生剥离的光刻胶残留宽度的关系时，例如，为了不剥离地形成5μm宽的光刻胶图形，光刻胶A中，在与基底的界面需要120mJ/cm2左右的曝光量。为了在与基底的界面获得120mJ/cm2的曝光量，参照图7，在表面需要600mJ/cm2左右的曝光量，由于发生表面的过硬化，光刻胶图形的剥离性减少。即，光刻胶A中，吸光度相对于365nm的波长的光超过80％，因此，无法获得本发明的效果。
另一方面，光刻胶B中，为了不剥离地形成5μm宽的光刻胶图形，在与基底的界面需要200mJ/cm2左右的曝光量。为了在与基底的界面获得200mJ/cm2左右的曝光量，参照图7，在表面有400mJ/cm2左右的曝光量即可，可以防止表面的过硬化，因此可以防止光刻胶图形的剥离性减少。即，吸光度相对于365nm的波长的光为42％的光刻胶B中，可获得本发明的效果。从而，本发明的光刻胶膜6的吸光度相对于365nm的波长的光设为80％以下，优选60％以下，更好为50％以下。
另外，光刻胶A中，曝光量为400mJ/cm2，线&间隔为10μm以上，未发生剥离。另外，光刻胶A中，曝光量为600mJ/cm2，线&间隔为6μm以上，未发生剥离。
另一方面，光刻胶B中，曝光量为400mJ/cm2，线&间隔为5μm以上，未发生剥离。另外，光刻胶B中，曝光量为600mJ/cm2，线&间隔为3μm以上，未发生剥离。
(第2实施例)
所述第1实施例中，为了防止光刻胶图形的剥离，说明了将光刻胶膜6的吸光度相对于365nm的波长的光设定成80％以下的方法，但是也可以使光刻胶膜6的显影时的溶解性减少到1μm/min以下。另外，作为减少光刻胶膜6的显影时的溶解性的方法，可以减少光刻胶材料的碱可溶性基。
这里，通过减少光刻胶膜6的显影时的溶解性，可以抑制显影液浸透光刻胶膜6和基底的界面，减少光刻胶图形的剥离。
调研该第2实施例的溶解性不同的光刻胶C、D的显影时间和光刻胶残膜厚度的关系。条件如下。光刻胶C、D采用负型光刻胶，光刻胶D采用相对于光刻胶C使碱可溶性基减少约30％的光刻胶，光刻胶C、D的膜厚度设定成10μm，基底采用Si基板。
其结果，相对于光刻胶D的显影速率为2μm/min，光刻胶C的显影速率为0.67μm/min。采用该光刻胶C的场合，与采用光刻胶D的场合比，可减少光刻胶图形的剥离。
(第3实施例)
图8(a)～(e)、图9(a)～(d)、图10(a)～(c)、图11(a)～(b)、图12(a)～(b)及图13(a)～(b)是第3实施例的半导体装置的制造方法的截面图。
该第3实施例中，通过图8(e)的工序，在金属膜5上形成光刻胶膜6前，在金属膜5上形成提高与光刻胶膜6的贴紧性的表面改性层16。
另外，金属膜5的表面为Cu的场合，表面改性层16可以采用Cu氧化膜。这里，Cu氧化膜优选为CuO，而且最好为Cu20。表面改性层16存在于金属膜5上即可，表面改性层16的膜厚度为数nm左右即可。
表面改性层16采用Cu氧化膜时，可以使Cu的表面用O终结，可以提高与光刻胶膜6的贴紧性。
另外，作为在Cu膜上形成Cu氧化膜的方法，可以是在氧化性氛围中进行热处理的方法。另外，该热处理的温度在室温以上即可。但是，为了缩短Cu氧化膜的形成时间，热处理的温度最好设定在数百℃以上。
图8(a)～(e)、图9(a)～(d)、图10(a)～(c)、图11(a)～(b)、图12(a)～(b)及图13(a)～(b)中，除了通过图8(e)的工序在金属膜5上形成表面改性层16的方法以外，可以进行与图1(a)～(e)、图2(a)～(d)、图3(a)～(c)、图4(a)～(b)、图5(a)～(b)及图6(a)～(b)同样的过程。
在表面曝光量为300mJ/cm2中调研第3实施例的基底的表面状态不同的场合中的发生剥离的光刻胶残留宽度时，在Cu膜上直接形成光刻胶图形的场合，耐剥离性光刻胶残留宽度为6μm左右，而在Cu膜上通过热处理形成作为表面改性层的Cu氧化膜后形成光刻胶图形的场合，成为3μm左右，通过设置表面改性层，可以抑制光刻胶剥离。
另外，该光刻胶图形采用线&间隔为3/3μm～15/15μm的一半间距图形。
虽然说明本发明的几个实施例，但是这些实施例只是作为例示，而不是限定发明的范围。这些新实施例可以各种各样的形态实施，在不脱离发明的要旨的范围，可进行各种省略、置换、变更。这些实施例及其变形也是发明的范围、要旨所包含的，同时也是权利要求的范围所述的发明及其均等的范围所包含的。

Claims (20)

1.一种半导体装置，其特征在于，具备：
形成了布线及焊盘电极的半导体基板；
在所述半导体基板上形成的金属膜；
在所述金属膜的表层形成的表面改性层；
隔着所述表面改性层在所述金属膜上形成的再布线。
2.权利要求1所述的半导体装置，其特征在于，
所述金属膜的下层为选择Ti、TiN、TiW、W、Ta、Cr、CoTi中的一个、所述金属膜的上层为选择Cu、Al、Pd、Au、Ag中的一个的层叠构造，所述表面改性层为Cu氧化膜。
3.一种半导体装置，其特征在于，具备：
在所述再布线上形成的表面层。
4.权利要求3所述的半导体装置，其特征在于，
所述再布线的材料为Cu，所述表面层的材料为从Mn、Ta、Ni、Zn、Cr、Co、Sn及Pb中选择的至少一个。
5.权利要求1所述的半导体装置，其特征在于，
在所述半导体基板形成了集成电路。
6.权利要求1所述的半导体装置，其特征在于，具备：
以覆盖所述布线及焊盘电极的方式在所述半导体基板上形成的保护膜；
在所述保护膜形成的、使所述焊盘电极露出的第1开口部；
在所述保护膜形成的、使所述布线的一部分露出的第2开口部。
7.权利要求6所述的半导体装置，其特征在于，具备：
在所述保护膜上形成的第1缓冲层；
在所述第1缓冲层形成的、经由所述第1开口部使所述焊盘电极露出的第3开口部；
在所述第1缓冲层形成的、经由所述第2开口部使所述布线的一部分露出的第4开口部。
8.权利要求7所述的半导体装置，其特征在于，
所述保护膜是无机绝缘体，所述第1缓冲层是树脂。
9.权利要求8所述的半导体装置，其特征在于，
所述树脂从聚酰亚胺系树脂、丙烯酸系树脂及苯酚系树脂中选择。
10.权利要求9所述的半导体装置，其特征在于，
所述金属膜具备在所述第1缓冲层和所述再布线之间形成的第1基底阻挡金属膜。
11.权利要求10所述的半导体装置，其特征在于，
所述再布线具备：
经由所述第1开口部及所述第3开口部与所述焊盘电极连接的第1再布线；
经由所述第2开口部及所述第4开口部与所述焊盘电极连接的第2再布线；
在所述第1缓冲层上形成的第3再布线。
12.权利要求11所述的半导体装置，其特征在于，具备：
在所述第1再布线、所述第2再布线及所述第3再布线上形成的第2缓冲层；
在所述第2缓冲层形成的、使所述第1再布线露出的第5开口部。
13.权利要求12所述的半导体装置，其特征在于，还具备：
经由所述第5开口部与所述第1再布线连接的突出电极。
14.权利要求13所述的半导体装置，其特征在于，
所述突出电极是合金焊接层组成的。
15.权利要求14所述的半导体装置，其特征在于，
所述金属膜还具备在所述第2缓冲层和所述突出电极之间形成的第2基底阻挡金属膜。
16.权利要求15所述的半导体装置，其特征在于，
所述第2缓冲层是树脂。
17.权利要求16所述的半导体装置，其特征在于，
所述树脂从聚酰亚胺系树脂、丙烯酸系树脂及苯酚系树脂中选择。
18.一种半导体装置的制造方法，其特征在于，具备：
在形成了布线及焊盘电极的半导体基板上形成金属膜的工序；
在所述金属膜上形成相对于达到与所述金属膜的界面为止的365nm的波长的光，吸光度为80％以下的光刻胶图形的工序；
在所述金属膜上形成埋入所述光刻胶图形间的再布线的工序；
所述再布线形成后从所述金属膜上除去所述光刻胶图形的工序。
19.一种半导体装置的制造方法，其特征在于，具备：
在形成了布线及焊盘电极的半导体基板上形成金属膜的工序；
在所述金属膜上形成显影时的溶解性为1μm/min以下的光刻胶图形的工序；
在所述金属膜上形成埋入所述光刻胶图形间的再布线的工序；
所述再布线形成后从所述金属膜上除去所述光刻胶图形的工序。
20.一种半导体装置的制造方法，其特征在于，具备：
在形成了布线及焊盘电极的半导体基板上形成金属膜的工序；
在所述金属膜的表层形成表面改性层的工序；
在所述金属膜上形成所述光刻胶图形的工序；
在所述金属膜上形成埋入所述光刻胶图形间的再布线的工序；
所述再布线形成后从所述金属膜上除去所述光刻胶图形的工序。
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