CN102381718B - 一种钝化剂及采用该钝化剂对锗基器件表面预处理的方法 - Google Patents

一种钝化剂及采用该钝化剂对锗基器件表面预处理的方法 Download PDF

Info

Publication number
CN102381718B
CN102381718B CN201010269030.4A CN201010269030A CN102381718B CN 102381718 B CN102381718 B CN 102381718B CN 201010269030 A CN201010269030 A CN 201010269030A CN 102381718 B CN102381718 B CN 102381718B
Authority
CN
China
Prior art keywords
germanium
substrate
ammonium fluoride
film
passivant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201010269030.4A
Other languages
English (en)
Other versions
CN102381718A (zh
Inventor
黄如
郭岳
安霞
王润声
张兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Peking University
Semiconductor Manufacturing International Beijing Corp
Original Assignee
Peking University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Peking University filed Critical Peking University
Priority to CN201010269030.4A priority Critical patent/CN102381718B/zh
Priority to US13/318,644 priority patent/US20120264311A1/en
Priority to PCT/CN2011/072518 priority patent/WO2012027987A1/zh
Publication of CN102381718A publication Critical patent/CN102381718A/zh
Application granted granted Critical
Publication of CN102381718B publication Critical patent/CN102381718B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
    • C23C22/34—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 containing fluorides or complex fluorides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/73—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

本发明提供了一种用氟化铵溶液作为钝化剂对锗基器件进行表面预处理的方法，属于超大规模集成电路(ULSI)工艺制造技术领域。本发明使用氟化铵水溶液对锗基器件进行表面预处理，可以减小界面态并且能够有效抑制自然氧化层的再次生成和锗基衬底材料的外扩散现象，还可以提高金属锗化物的热稳定性。本发明简单有效地改善了锗基器件的界面特性，有利于提升锗基晶体管的性能，在不增加工艺复杂性的情况下对锗基器件进行表面钝化预处理，非常有利于工艺的集成。

Description

一种钝化剂及采用该钝化剂对锗基器件表面预处理的方法
技术领域
本发明属于超大规模集成电路(ULSI)工艺制造技术领域，具体涉及一种钝化剂及采用该钝化剂对锗基器件进行表面预处理的方法。
背景技术
集成电路技术遵循着摩尔定律已发展了40多年，带来集成电路集成度及功能的迅速提升，金属-氧化物-半导体场效应晶体管(MOSFET)几何尺寸的减小是提高器件速度并降低生产成本的主要手段。然而器件特征尺寸的进一步缩小使晶体管逐渐达到物理和技术的双重极限，传统体Si器件性能难以按照以往速度进一步提升。高迁移率沟道材料的引入可以进一步提升器件性能，因此锗基器件成为当前研究的热点。相比硅材料，锗材料在低电场下空穴迁移率是硅材料的4倍，电子迁移率是硅材料的2倍，因此，锗基材料作为一种新的沟道材料以其更高、更加对称的载流子迁移率成为高速MOSFET器件很有希望的发展方向之一。
但是，目前锗基器件制备技术还不成熟，器件性能还不太理想，仍有许多问题未得到妥善解决。首先，锗基器件界面存在较高密度的界面态，散射加剧，造成锗基器件迁移率始终不高。其次，在较低的温度下(330度)，锗基衬底材料就会发生外扩散现象，即锗以一氧化锗气体的形式向衬底外挥发，造成锗基衬底表面和其上淀积的薄膜的形貌都明显变差，导致漏电增大。第三，金属锗化物薄膜的热稳定性比较差，金属锗化物薄膜会由于成核凝聚反应使得金属锗化物凝聚并形成很多空洞，薄膜质量变差。以上这些问题严重影响锗基器件特性并给锗基器件工艺制备带来困难。
发明内容
为了解决上述问题，本发明提出一种锗基器件表面钝化剂及采用该钝化剂对锗基器件进行表面预处理的方法，该方法利于提高所制备器件的性能，而且工艺简单，成本较低，效果显著。通过该钝化剂对锗基器件进行表面预处理，可以减小界面态并且能够有效抑制自然氧化层的再次生成和锗基衬底材料的外扩散现象，还可以显著提高金属锗化物的热稳定性。
一种锗基表面钝化剂，其特征在于，为氟化铵水溶液，其质量百分比浓度为20-55％。
一种用氟化铵溶液作为钝化剂对锗基器件进行表面预处理的方法，其包括以下步骤：
1)以半导体锗基衬底为基片；
2)对基片进行清洗；
3)去除表面氧化层；
4)氟化铵水溶液对基片进行表面处理，处理的时间为5-35min，处理在大气环境下进行。
所述1)步骤中，锗基衬底是体锗衬底、外延锗衬底或锗覆绝缘(GOI)衬底。衬底可以是N型掺杂也可以是P型。
所述步骤2)中的清洗步骤可以为有机清洗、盐酸清洗、HF清洗等，但不局限于上述清洗方法，目的是对基片的有机和无机污染物、金属颗粒等进行去除。
所述3)步骤中，去除表面氧化层的方法采用在HCl、HF或者HBr溶液中浸泡的方法。
所述4)步骤之后，可以进一步淀积金属薄膜，如镍、铂或钴等等，并反应退火生成金属锗化物。反应退火工艺温度介于300至600度，退火时间介于10秒至70秒。也可以淀积二氧化硅或其他一些高K介质层，比如Al2O3、ZrO2、Y2O3等等。
与现有技术相比，本发明的有益效果是：
首先，使用氟化铵水溶液对锗基器件进行表面预处理，可以在锗基器件表面引入电负性高的氟，易于形成稳定的Ge-F键，因此，氟化铵表面预处理可以钝化锗表面，减少界面态的影响；第二，在薄膜淀积和反应退火过程中，经过氟化铵预处理的锗基器件表面可以抑制一氧化锗气体的形成和挥发，减弱锗的外扩散，进而获得平整均匀的表面。第三，由于自然氧化层的存在会加剧锗的外扩散现象，进而破坏锗基器件表面，所以在淀积薄膜前需要去除自然氧化层。但是只要接触大气，自然氧化层又会重新生成。通过氟化铵预处理过程，可以有效抑制自然氧化层的再次生成，进一步提升表面质量。第四，氟化铵预处理还能够有效抑制金属锗化物在较高退火温度下发生凝聚并形成空洞，显著提高金属锗化物的热稳定性。第五，此方法简单有效地改善了锗基器件的界面特性，提升了锗基晶体管的性能，在不增加工艺复杂性的情况下对锗基器件进行表面钝化预处理，非常有利于工艺集成。
附图说明
图1为采用本发明所提到的钝化剂对锗基器件进行表面预处理的一具体实施例的流程图。
图2为采用三种表面预处理方法制备的金属锗化物薄膜的表面SEM照片。
图3为采用氟化铵进行表面预处理后，金属锗化物薄膜在不同反应退火温度下的SEM照片。
具体实施方式
下面结合附图和一个具体实施例对氟化铵溶液作为钝化剂对锗基器件进行表面预处理的良好效果作进一步阐述：
图1为采用氟化铵为钝化剂对锗基器件进行表面预处理的一具体实施例的方法流程图。本实施例包括如下步骤：
步骤1：提供一块锗基衬底。如图1(a)所示，一半导体锗衬底1，其中半导体锗衬底1可是体锗衬底、外延锗衬底或锗覆绝缘(GOI)衬底等。衬底掺杂可以是P型也可以是N型。
步骤2：对基片进行清洗。首先对基片进行有机清洗，采用丙酮和乙醇交替清洗2次，然后用DI水反复冲洗干净，去除基片上的油污和有机污染物。然后进行盐酸清洗，在稀盐酸中加热煮沸，随后用DI水反复冲洗干净，去除无机污染物、金属颗粒等。清洗的目的是对基片的有机和无机污染物、金属颗粒等进行去除，并不局限于上述清洗方法。
步骤3：去除表面氧化层。可以采用在HCl溶液中浸泡或在稀释的HF溶液中浸泡方法，随后用DI水反复冲洗干净。去除氧化层后基片的示意图如图1(b)所示。
步骤4：氟化铵溶液表面预处理。在大气的环境中，使基片在氟化铵水溶液中浸泡5-35min，其中氟化铵水溶液的浓度为40％。然后基片用DI水反复冲洗干净，完成对锗基器件表面的预处理。
步骤5：淀积金属薄膜并反应退火生成金属锗化物，本实施例为淀积金属镍膜，用具体实施例来证明氟化铵作为钝化剂对锗基器件表面进行预处理的有益效果。利用物理气相淀积方式，例如蒸发、溅射或电子束蒸发等方式，在半导体衬底上淀积一层金属镍，其中镍层可为一镍金属层或一镍合金层。淀积的金属膜厚大约在10nm至50nm。淀积镍膜后，本发明的方法亦可选择性的在镍层上再形成一层盖帽层。随后进行反应退火处理，快速热退火使上述金属薄膜层与位于其下方的锗层反应形成金属锗化物3，如图1(c)所示。另外，本次快速热退火工艺温度介于350至600度，退火时间为30秒至80秒，根据淀积的镍金属层的厚度而定。
图2给出了采用三种表面预处理方法制备的金属锗化物薄膜的SEM照片。金属锗化物薄膜的制备流程如图1所示。图2(a)仅采用HCl去除表面氧化层，没有使用氟化铵钝化剂进行表面处理。从图中可以看到，所生成的NiGe薄膜发生了明显的凝聚，同时产生很多的空洞，薄膜粗糙，质量很差。所以仅用盐酸去除自然氧化层不能得到良好的薄膜。图2(b)仅采用HF去除表面氧化层，没有使用氟化铵钝化剂进行表面处理。可以看到，虽然薄膜质量有所提高，但是依然有凝聚现象，而且生成的镍锗化物薄膜并不平整。图2(c)为本发明实施例先采用HCl去除表面氧化层，随后使用氟化铵钝化剂进行表面处理。采用氟化铵钝化剂后，薄膜表面形貌有明显提高，平整而均匀。这主要是由于采用了氟化铵钝化剂后，可以有效抑制自然氧化层的再次生长，同时在反应退火过程中，氟化铵可以抑制一氧化锗气体的挥发，减弱了锗的外扩散，同时还可以阻碍金属锗化物发生凝聚现象，因而可以获得非常平整的表面。通过比较，可以清楚地看到氟化铵作为钝化剂对锗基器件进行表面预处理的有益效果。
图3为本发明实施例采用氟化铵进行表面预处理后，镍锗薄膜在不同反应退火温度下的SEM照片。金属锗化物薄膜的制备流程如图1所示。其中(a)到(d)的反应退火温度分别为350度、400度、450度和500度，退火时间都是40s。从图中可以看到，当采用氟化铵钝化剂对锗基器件进行表面预处理后，镍锗薄膜在350度到500度温度范围内都有非常好的薄膜质量。因而，氟化铵钝化剂可以使镍锗薄膜的热稳定性显著提升。
本发明实施例提供了锗基表面钝化剂为40％浓度的氟化铵水溶液，除此之外，氟化铵水溶液的质量百分比浓度范围为20-55％。利用本发明提出的钝化剂及采用该钝化剂对锗基器件进行表面预处理的方法，可以减少界面态，抑制锗表面自然氧化层的形成，减少一氧化锗的挥发，而且还可改善所形成的金属锗化物的热稳定性，有利于提升锗基晶体管的性能。因此相对于现有工艺技术，本发明可以简单有效地提升锗基器件的电性能与可靠性。
以上通过优选实施例详细阐述并证明了本发明所提出的一种钝化剂及采用该钝化剂对锗基器件进行表面预处理的方法，本领域的技术人员应当理解，以上所述仅为本发明的一个优选实施例，在不脱离本发明实质的范围内，其制备方法和应用不仅限于实施例中所公开的内容，凡依本发明权利要求所做的均等变化与修饰，皆应属本发明的涵盖范围。

Claims (5)

1.一种锗基表面预处理的方法，其包括以下步骤：
1)以半导体锗基衬底为基片；
2)对基片进行清洗；
3)去除表面氧化层；
4)用氟化铵水溶液对基片进行表面处理，所述氟化铵水溶液的质量百分比浓度为20-55%，处理的时间为5-35min，处理在大气环境下进行。
2.如权利要求1所述方法，其特征在于，所述锗基衬底是体锗衬底、外延锗衬底或锗覆绝缘衬底。
3.如权利要求1所述方法，其特征在于，所述步骤2)中清洗步骤为有机清洗、盐酸清洗或采用HF来清洗。
4.如权利要求1所述方法，其特征在于，所述步骤3)中，去除表面氧化层的方法采用在HCl、HF或者HBr溶液中浸泡的方法。
5.如权利要求1所述方法，其特征在于，所述步骤4)之后，进一步淀积金属薄膜并反应生成金属锗化物，所述金属薄膜为镍、铂或钴膜，或淀积二氧化硅或Al2O3、ZrO2、Y2O3高K介质层。
CN201010269030.4A 2010-09-01 2010-09-01 一种钝化剂及采用该钝化剂对锗基器件表面预处理的方法 Active CN102381718B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201010269030.4A CN102381718B (zh) 2010-09-01 2010-09-01 一种钝化剂及采用该钝化剂对锗基器件表面预处理的方法
US13/318,644 US20120264311A1 (en) 2010-09-01 2011-04-08 Surface treatment method for germanium based device
PCT/CN2011/072518 WO2012027987A1 (zh) 2010-09-01 2011-04-08 锗基器件表面处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010269030.4A CN102381718B (zh) 2010-09-01 2010-09-01 一种钝化剂及采用该钝化剂对锗基器件表面预处理的方法

Publications (2)

Publication Number Publication Date
CN102381718A CN102381718A (zh) 2012-03-21
CN102381718B true CN102381718B (zh) 2013-01-16

Family

ID=45772117

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010269030.4A Active CN102381718B (zh) 2010-09-01 2010-09-01 一种钝化剂及采用该钝化剂对锗基器件表面预处理的方法

Country Status (3)

Country Link
US (1) US20120264311A1 (zh)
CN (1) CN102381718B (zh)
WO (1) WO2012027987A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102664144B (zh) * 2012-05-18 2015-04-15 北京大学 一种适于锗基器件的界面处理方法
US8632691B2 (en) 2012-05-18 2014-01-21 Peking University Interface treatment method for germanium-based device
DE102012221932A1 (de) * 2012-11-30 2014-06-05 Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. Aufgerollte, dreidimensionale Feldeffekttransistoren und ihre Verwendung in der Elektronik, Sensorik und Mikrofluidik
CN103681245A (zh) * 2013-12-26 2014-03-26 中国科学院微电子研究所 一种对锗片进行清洗及表面钝化的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101752236A (zh) * 2009-10-26 2010-06-23 南京大学 一种调控GaAs半导体与栅介质间能带补偿的原子层沉积Al2O3/HfO2方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59137346A (ja) * 1983-01-27 1984-08-07 Nippon Telegr & Teleph Corp <Ntt> ガラス導波路の作製法
JPH07159974A (ja) * 1993-12-09 1995-06-23 Ryoden Semiconductor Syst Eng Kk パターン転写マスクおよびその製造方法
BE1008480A3 (fr) * 1994-07-18 1996-05-07 En Nouvelles Et Environnement Procede de traitement d'un substrat de germanium avant le depot d'arseniure de gallium.
US7348206B2 (en) * 2001-10-26 2008-03-25 The Regents Of The University Of California Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications
TWI516573B (zh) * 2007-02-06 2016-01-11 安堤格里斯公司 選擇性移除ＴｉＳｉＮ之組成物及方法
US8142571B2 (en) * 2008-05-15 2012-03-27 Fsi International, Inc. Process for treatment of semiconductor wafer using water vapor containing environment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101752236A (zh) * 2009-10-26 2010-06-23 南京大学 一种调控GaAs半导体与栅介质间能带补偿的原子层沉积Al2O3/HfO2方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF;G.S.Higashi etal.;《Applied Physics Letters》;19910430;第1656页左侧栏第3段 *
G.S.Higashi etal..Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF.《Applied Physics Letters》.1991,第1656页左侧栏第3段.
Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions;Yun Sun et al.;《Applied Physics Letters》;20061231;021903-1 *
Yun Sun et al..Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions.《Applied Physics Letters》.2006,021903-1.

Also Published As

Publication number Publication date
CN102381718A (zh) 2012-03-21
WO2012027987A1 (zh) 2012-03-08
US20120264311A1 (en) 2012-10-18

Similar Documents

Publication Publication Date Title
CN102206799B (zh) 一种锗基mos器件衬底的表面钝化方法
CN102306625B (zh) 一种锗基mos器件衬底的表面钝化方法
CN102381718B (zh) 一种钝化剂及采用该钝化剂对锗基器件表面预处理的方法
CN102610553A (zh) 一种绝缘体上锗衬底的制备方法
US20070087573A1 (en) Pre-treatment method for physical vapor deposition of metal layer and method of forming metal silicide layer
CN107785258A (zh) 一种4H‑SiC P型绝缘栅双极型晶体管的制备方法
CN102087969A (zh) 一种全硅化金属栅的制备方法
CN107230625A (zh) 氮化镓晶体管及其制造方法
CN107633998B (zh) 形成欧姆接触的方法以及半导体器件的制作方法
CN107154338A (zh) 一种提高GaN HEMT钝化效果、降低电流崩塌的表面处理技术
US9484208B2 (en) Preparation method of a germanium-based schottky junction
CN102664144B (zh) 一种适于锗基器件的界面处理方法
CN102655112B (zh) 实现锗基mos器件有源区之间隔离的方法
JP2010103296A (ja) 酸化ゲルマニウムの製造方法およびそれを用いた半導体デバイスの製造方法
CN115295407A (zh) 一种SiC功率器件的栅氧结构制备方法和栅氧结构
CN106298486B (zh) 半导体器件的制备方法
CN104882367B (zh) 一种改善SiC MOSFET器件沟道迁移率的方法
CN110942984B (zh) 一种硅化钴膜的制备方法
JP4575745B2 (ja) ＧａＮ系半導体層に上部層が積層されている半導体装置の製造方法
US7129184B2 (en) Method of depositing an epitaxial layer of SiGe subsequent to a plasma etch
CN101157569B (zh) 一种无损腐蚀碳化硅的方法
CN105374689A (zh) 一种锗基mos器件衬底的表面钝化方法及得到的锗基mos器件
CN115588612B (zh) 一种碳化硅栅极氧化层的制备方法以及相应的器件
TW202207357A (zh) 半導體基板及其製造方法
CN110676171A (zh) 一种基于InAlAs材料的MOS器件及其制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB03 Change of inventor or designer information

Inventor after: Huang Ru

Inventor after: Guo Yue

Inventor after: An Xia

Inventor after: Wang Runsheng

Inventor after: Zhang Xing

Inventor before: Guo Yue

Inventor before: An Xia

Inventor before: Wang Runsheng

Inventor before: Huang Ru

Inventor before: Zhang Xing

COR Change of bibliographic data

Free format text: CORRECT: INVENTOR; FROM: GUO YUE AN XIA WANG RUNSHENG HUANG RU ZHANG XING TO: HUANG RU GUO YUE AN XIA WANG RUNSHENG ZHANG XING

C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING

Free format text: FORMER OWNER: BEIJING UNIV.

Effective date: 20141229

Owner name: BEIJING UNIV.

Effective date: 20141229

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 100000 HAIDIAN, BEIJING TO: 100176 DAXING, BEIJING

TR01 Transfer of patent right

Effective date of registration: 20141229

Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone

Patentee after: Semiconductor Manufacturing International (Beijing) Corporation

Patentee after: Peking University

Address before: 100000 Beijing the Summer Palace Road, Haidian District, No. 5

Patentee before: Peking University