CN102206799B - 一种锗基mos器件衬底的表面钝化方法 - Google Patents
一种锗基mos器件衬底的表面钝化方法 Download PDFInfo
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US8632691B2 (en) | 2012-05-18 | 2014-01-21 | Peking University | Interface treatment method for germanium-based device |
CN102664144B (zh) * | 2012-05-18 | 2015-04-15 | 北京大学 | 一种适于锗基器件的界面处理方法 |
CN102671894A (zh) * | 2012-05-22 | 2012-09-19 | 南京大学 | 一种清洗钝化GaAs衬底表面的方法 |
CN102881562A (zh) * | 2012-10-11 | 2013-01-16 | 北京大学 | 一种锗基衬底的表面钝化方法 |
CN103779280B (zh) * | 2012-10-26 | 2017-07-28 | 中芯国际集成电路制造(上海)有限公司 | 高介电层金属栅器件的制造方法 |
CN103151254A (zh) | 2013-03-18 | 2013-06-12 | 北京大学 | 一种锗基肖特基结的制备方法 |
CN104425241A (zh) * | 2013-09-10 | 2015-03-18 | 中国科学院微电子研究所 | 一种自然氧化层的去除方法 |
CN104716189A (zh) * | 2015-03-06 | 2015-06-17 | 东南大学 | 一种具有界面钝化层的锑化镓基半导体器件及其制备方法 |
CN108998697B (zh) * | 2018-08-07 | 2020-09-11 | 燕山大学 | 一种在中锆合金表面渗锆制备富锆改性层的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030227017A1 (en) * | 2002-06-07 | 2003-12-11 | Atsushi Yasuno | Photovoltaic device |
CN1964073A (zh) * | 2006-12-08 | 2007-05-16 | 北京大学 | 一种mos晶体管及其制作方法 |
CN101026093A (zh) * | 2006-02-17 | 2007-08-29 | 三星电子株式会社 | 形成硅层的方法及使用该硅层的显示基板的制造方法 |
CN101312150A (zh) * | 2007-05-21 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | 双镶嵌结构的形成方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US20030227017A1 (en) * | 2002-06-07 | 2003-12-11 | Atsushi Yasuno | Photovoltaic device |
CN101026093A (zh) * | 2006-02-17 | 2007-08-29 | 三星电子株式会社 | 形成硅层的方法及使用该硅层的显示基板的制造方法 |
CN1964073A (zh) * | 2006-12-08 | 2007-05-16 | 北京大学 | 一种mos晶体管及其制作方法 |
CN101312150A (zh) * | 2007-05-21 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | 双镶嵌结构的形成方法 |
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