CN102364676B - Packaging shell structure for semiconductor power module - Google Patents
Packaging shell structure for semiconductor power module Download PDFInfo
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- CN102364676B CN102364676B CN201110387500.1A CN201110387500A CN102364676B CN 102364676 B CN102364676 B CN 102364676B CN 201110387500 A CN201110387500 A CN 201110387500A CN 102364676 B CN102364676 B CN 102364676B
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- electrode
- wallboard
- housing
- power module
- tip holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
The invention relates to a packaging shell structure for a semiconductor power module. At least four electrodes are embedded on the two sides of a shell respectively; aluminum wire bonding seats of all the electrodes are arranged on a base on the inner side of a wall plate; connecting seats are arranged on all electrode seats on the outer side of the wall plate; connecting pieces with internal threads are respectively inserted into slots of all the electrode seats and are connected with the connecting seats of the electrodes; limiting bumps for limiting the connecting pieces are arranged on the end parts of elastic arms on the two sides of the slots of the electrode seats; at least four signal terminals are embedded in the wall plate of the shell; the aluminum wire bonding seats of all the signal terminals are arranged on the base on the inner side of the wall plate; the other side of each signal terminal passes through the upper end face of the shell wall plate; a cover plate is arranged at a seam of the shell wall plate and is clamped on the inner wall of the shell wall plate; the shell is positioned on the outer side of the wall plate and is provided with at least two mounting seats; and T-shaped bushings are pressed on the mounting seats and a bottom plate. The structure is reasonable, the bonding fastness of all the electrodes and all the signal terminals is effectively improved, external copper bars are reliably arranged, and the structure is convenient to assemble.
Description
Technical field
The present invention relates to a kind of packaging shell structure for semiconductor power module, belong to semi-conductor power module manufacturing technology field.
Background technology
Semi-conductor power module is widely used in the industry controls such as electric drive, Electric Machine Control, the numerous areas such as Automobile drive and hybrid power, wind energy, welding machine, locomotive traction, change the direct current (DC) of input into three-phase alternating current (AC) output, as various Switching Power Supplies.And the system power model mainly by semiconductor chip, cover the formations such as cermet substrate (DBC), copper soleplate, housing, cover plate, semiconductor chip and electrode welding are covering on cermet substrate or the base plate, and the bottom of covering the cermet substrate is fixed on the copper soleplate, again by encapsulating with semiconductor chip with cover in the cermet substrate sealing stationary housing, with sealing on the cover plate holder housing, electrode is arranged in the electrode tip holder after bending at last.Because the electrode on the semi-conductor power module and an end of each terminal all are fixed on and cover on the cermet substrate, each electrode and each terminal pass housing and end cap being electrically connected with realization and outside, because housing or end cap are not fixed each electrode and each signal terminal, therefore each electrode and each signal terminal are easy to rock, at semi-conductor power module in the long-term work running, because semiconductor chip all can be subject to mechanical oscillation with each electrode and each terminal, the impact of the factor such as mechanical stress and thermal stress, some semi-conductor power modules are to work under vibration environment in addition, therefore various stress and vibration force all can make each electrode and the generation of each signal terminal rock, and reach each bonding place, and reduce the fastness of the bonding point of each terminal and each electrode, cause the power loss that produces because rocking.Secondly because each electrode is arranged on the electrode tip holder after need bending, and has relatively high expectations to external copper installation, otherwise in installation process easily the fastness to electrode bonding place damage.Moreover, because electrode is to be connected with copper bar after bending at last, so the installed surface of electrode can't reach fully smooth, easy and electrode loose contact behind the installation copper bar and the contact resistance that causes is excessive, and then cause the phenomenon of local overheating, equally also can affect the fastness of each electrode junction.Present its housing of disclosed semi-conductor power module is to be connected by securing member with base plate, and end cap is fixed on the housing, and not only complex structure, and assembly process is complicated, and installation effectiveness is not high.
Summary of the invention
The purpose of this invention is to provide a kind of rational in infrastructure, the fastness of each electrode of Effective Raise and each signal terminal bonding, copper installation is reliable, packaging shell structure for semiconductor power module easy to assembly.
The present invention is that the technical scheme that achieves the above object is: a kind of packaging shell structure for semiconductor power module, the housing and the cover plate and the base plate that are installed on the housing that comprise wallboard around having, it is characterized in that: at least four electrodes are rabbeted respectively the wallboard place in the housing both sides, the aluminium wire bonding seat of each electrode is arranged on the base of wallboard inboard, Connection Block is arranged on electrode tip holder corresponding to the wallboard outside, the Connection Block of described electrode is made of notch seat and conducting block, conducting block is installed on the confined planes of electrode tip holder and joins with notch seat on the Connection Block of electrode, and the Connection Block of each electrode has plane and the installing hole that joins with copper bar, the installing hole of Connection Block is corresponding with installing hole on the electrode tip holder separately, connector with internal thread is inserted into respectively in the slot of each electrode tip holder and joins with the Connection Block of electrode, and the elastic arm end of the slot both sides of electrode tip holder is provided with the spacing block set spacing to connector; At least four signal terminal interlockings are on the wallboard of housing, and the upper surface that the aluminium wire bonding seat of each signal terminal is arranged on the base of wallboard inboard, opposite side passes the housing wallboard, cover plate is installed in the inner stopper place of the wallboard of housing, at least two card bases in cover plate bottom are installed in deck on the housing wallboard inwall or/and on the locked groove or/and at least two elasticity card bases are corresponding respectively, housing is positioned at the wallboard outside and is provided with at least two mount pads, and T shape lining is crimped in the installing hole of installing hole on the mount pad and base plate.
The present invention is with the wallboard place of each electrode and signal terminal interlocking at housing, to strengthen the firm degree of each electrode and each signal terminal, in the time of no matter by supersonic bonding, because each electrode and each signal terminal are to be fixed on the housing, so each electrode and each signal terminal are difficult for rocking, can avoid the power loss that causes owing to rocking, so can improve the fastness at each electrode and each signal terminal bonding place.Also fixed by housing because of each signal terminal of each electrode, not only be convenient to by the aluminium wire bonding with cover the cermet substrate, and improve the reliability of its solder joint, and semi-conductor power module at work, especially under vibration environment, can at utmost reduce semiconductor chip, each electrode and each signal terminal and affected by mechanical oscillation, mechanical stress and thermal stress and act on its bonding point place, guarantee that power model can reliability Work under adverse circumstances.The Connection Block of each electrode of the present invention has the plane that joins with copper bar, need not to bend, and the client is when connecting with copper bar, the contact resistance problems of too that can not cause copper bar and each electrode loose contact and cause, solve the local overheating phenomenon, made things convenient for the client to use, improved dependability.Cover plate of the present invention by card base or/and elastic card firmly is connected to the deck of housing or/and on the locked groove, convenient and reliable assembly.The connector that the present invention has screw is to be plugged in the slot of electrode tip holder, and spacing by the elastic arm of the slot both sides of electrode tip holder, and installation connecting element is convenient, and convenient operation.
Description of drawings
Below in conjunction with accompanying drawing embodiments of the invention are described in further detail.
Fig. 1 is the structural representation of packaging shell structure for semiconductor power module of the present invention.
Fig. 2 is the structural representation that packaging shell structure for semiconductor power module of the present invention is removed end cap.
Fig. 3 is that each electrode of packaging shell structure for semiconductor power module of the present invention and each signal terminal are bonded in the structural representation on the bottom.
Wherein: 1-cover plate, 1-1-card base, 1-2-installed surface, 1-3-elasticity card base, 2-electrode, 2-1-aluminium wire bonding seat, 2-2-Connection Block, 2-21-notch seat, 2-22-conducting block, 3-housing, 3-1-inner stopper, 3-2-wallboard, 3-3-locked groove, 3-4-base, 3-5-deck, 3-6-stepped hole, 3-7-mount pad, 3-8-slot, 3-9-elastic arm, 3-10-electrode tip holder, 4-base plate, 5-signal terminal, 5-1-aluminium wire bonding seat, 6-T shape lining, 7-connector, 8-aluminium wire.
Embodiment
See shown in Fig. 1～3, packaging shell structure for semiconductor power module of the present invention, the housing 3 and the cover plate 1 and the base plate 4 that are installed on the housing 3 that comprise wallboard 3-2 around having, be welded with on the base plate 4 and cover the cermet substrate, at least four electrodes 2 are rabbeted respectively the wallboard 3-2 place in housing 3 both sides, the aluminium wire bonding seat 2-1 of each electrode 2 is arranged on the base 3-4 of wallboard 3-2 inboard, Connection Block 2-2 is arranged on each electrode tip holder 3-10 in the wallboard 3-2 outside, the Connection Block 2-2 of each electrode 2 has plane and the installing hole that joins with copper bar, the installing hole of this Connection Block 2-2 is corresponding with installing hole on the electrode tip holder 3-10 separately, when adopting four electrodes 2, housing 3 is provided with four electrode tip holder 3-10, electrode tip holder 3-10 data on the housing 3 can be according to the designing requirement setting, electrode 2 of the present invention can adopt Z-shaped, and form reliable the contact by the plane on the Connection Block 2-2 with external copper bar, and reduce contact resistance; Or as shown in Figure 2, the Connection Block 2-2 of electrode 2 of the present invention is made of notch seat 2-21 and conducting block 2-22, this electrode 2 can adopt L shaped, conducting block 2-22 is installed on the confined planes of electrode tip holder 3-10 and joins with notch seat 2-21 on the Connection Block 2-2 of electrode 2, the notch seat 2-21 end face of Connection Block 2-2 of the present invention is the inclined-plane, the inclined-plane of the inclined-plane of conducting block 2-22 and notch seat 2-21 end joins, to keep conducting block 2-22 well to contact with Connection Block 2-2, aluminium wire 8 is bonded in the aluminium wire bonding seat 2-1 of electrode 2 and covers on the cermet substrate by ultrasonic wave, semiconductor chip is welded on and covers on the cermet substrate.See Fig. 1, shown in 2, the Connection Block 2-2 that the connector 7 that the present invention has an internal thread is inserted into respectively in the slot 3-8 of each electrode tip holder 3-10 with electrode 2 joins, the elastic arm 3-9 end of the slot 3-8 both sides of electrode tip holder 3-10 is provided with the spacing block set spacing to connector 7, this spacing block set and connector 7 end faces join after connector 7 is in place, connector 7 can not be moved, as shown in Figure 2, its bottom surface of elastic arm 3-9 and side on the electrode tip holder 3-10 have breach, make elastic arm 3-9 have certain elasticity, both in the convenient slot 3-8 with connector 7 electrode insertion seat 3-10, again can be conveniently the spacing block set of elastic arm 3-9 end by both sides carry out spacing to connector 7, each external copper bar is placed on each electrode 2 and is installed in connector 7 by bolt, copper bar reliably is connected with each electrode 2, realizes the input and output of power model of the present invention.
See shown in Fig. 1～3,5 interlockings of at least four signal terminals of the present invention are on the wallboard 3-2 of housing 3, this signal terminal 5 can be grid-control terminal and temperature monitoring terminal, the aluminium wire bonding seat 5-1 of each signal terminal 5 is arranged on the base 3-4 of wallboard 3-2 inboard, opposite side passes the upper surface of housing 3 wallboard 3-2, this signal terminal 5 can be L shaped, so can each signal terminal 5 be fixed by the wallboard 3-2 of housing 3, ultrasonic wave is bonded in aluminium wire 8 the aluminium wire bonding seat 5-1 of signal terminal 5 and covers the cermet substrate, each control signal is introduced and detection signal is exported by each signal terminal 5.
See shown in Fig. 1～3, cover plate 1 of the present invention is installed in the inner stopper 3-1 place of the wallboard 3-2 of housing 3, the installed surface 1-2 of cover plate 1 periphery is installed in the inner stopper 3-1 place of wallboard 3-2, and at least two card base 1-1 of cover plate 1 bottom or and at least two on elasticity card base 1-3 respectively the deck 3-5 on the corresponding wallboard 3-2 inwall that is installed in housing 3 or/and locked groove 3-3 place, as shown in Figure 1, but cover plate 1 bottom adopts four card base 1-1 to be installed in respectively on four deck 3-5 of housing 3 wallboard 3-2 inwalls, this cover plate 1 bottom is provided with two elasticity card base 1-3, elasticity card base 1-3 is connected to the locked groove 3-3 place on the wallboard 3-2 inwall of housing 3, cover plate 1 is connected in the housing 3 convenient and reliable assembly.
See shown in Fig. 1～3, housing 3 of the present invention is positioned at the wallboard 3-2 outside and is provided with at least two mount pad 3-7, T shape lining 6 is crimped in the installing hole of installing hole on the mount pad 3-7 and base plate 4, has bulge loop on these T shape lining 6 lower, outer perimeter, this bulge loop is connected to the bottom surface of base plate 4, can realize being connected with base plate 4 by T shape lining 6, shell 3 firmly is connected with base plate 4 reliably.
See shown in Fig. 1～3, the wallboard 3-2 round angle of housing 3 of the present invention is provided with stepped hole 3-6, the base 3-4 of housing 3 is provided with location notch or the positioning convex spacing to drive plate, four self-tapping screws pass drive plate and screw on the nut that is arranged in the housing 3 stepped hole 3-6, make things convenient for the client that drive plate is connected with housing 3.
Claims (4)
1. packaging shell structure for semiconductor power module, comprise the housing (3) of wallboard (3-2) around having and be installed in cover plate (1) and base plate (4) on the housing (3), it is characterized in that: at least four electrodes (2) are rabbeted respectively at the wallboard (3-2) of housing (3) both sides and are located, the aluminium wire bonding seat (2-1) of each electrode (2) is arranged on the inboard base (3-4) of wallboard (3-2), Connection Block (2-2) is arranged on electrode tip holder (3-10) corresponding to wallboard (3-2) outside, the Connection Block (2-2) of described electrode (2) is made of notch seat (2-21) and conducting block (2-22), conducting block (2-22) is installed on the confined planes of electrode tip holder (3-10) and joins with notch seat (2-21) on the Connection Block (2-2) of electrode (2), and the Connection Block (2-2) of each electrode (2) has plane and the installing hole that joins with copper bar, the installing hole of Connection Block (2-2) is corresponding with installing hole on the electrode tip holder (3-10) separately, connector (7) with internal thread is inserted into respectively in the slot (3-8) of each electrode tip holder (3-10) and joins with the Connection Block (2-2) of electrode (2), and elastic arm (3-9) end of slot (3-8) both sides of electrode tip holder (3-10) is provided with the spacing spacing block set of connector (7); At least four signal terminals (5) interlocking is on the wallboard (3-2) of housing (3), and the aluminium wire bonding seat (5-1) of each signal terminal (5) is arranged on the inboard base (3-4) of wallboard (3-2), opposite side passes the upper surface of housing (3) wallboard (3-2), cover plate (1) is installed in the inner stopper (3-1) of the wallboard (3-2) of housing (3) and locates, cover plate (1) bottom at least two card bases (1-1) or/and at least two elasticity card bases (1-3) respectively correspondence be installed in deck (3-5) on housing (3) wallboard (3-2) inwall or/and on the locked groove (3-3), housing (3) is positioned at wallboard (3-2) outside and is provided with at least two mount pads (3-7), and T shape lining (6) is crimped in the installing hole of installing hole on the mount pad (3-7) and base plate (4).
2. packaging shell structure for semiconductor power module according to claim 1, it is characterized in that: bottom surface and the side of the elastic arm (3-9) of described electrode tip holder (3-10) have breach.
3. packaging shell structure for semiconductor power module according to claim 1, it is characterized in that: wallboard (3-2) round angle of described housing (3) is provided with stepped hole (3-6), and the base (3-4) of housing (3) is provided with location notch or the positioning convex spacing to drive plate.
4. packaging shell structure for semiconductor power module according to claim 1, it is characterized in that: described T shape lining (6) lower, outer perimeter has bulge loop, and bulge loop is connected to the bottom surface of base plate (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110387500.1A CN102364676B (en) | 2011-11-30 | 2011-11-30 | Packaging shell structure for semiconductor power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110387500.1A CN102364676B (en) | 2011-11-30 | 2011-11-30 | Packaging shell structure for semiconductor power module |
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| Publication Number | Publication Date |
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| CN102364676A CN102364676A (en) | 2012-02-29 |
| CN102364676B true CN102364676B (en) | 2013-10-30 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820774A (en) * | 2012-08-30 | 2012-12-12 | 江苏宏微科技股份有限公司 | Direct-current chopping power module |
| WO2015017988A1 (en) * | 2013-08-06 | 2015-02-12 | 深圳市依思普林科技有限公司 | Crimping power module |
| CN106252291B (en) * | 2016-09-25 | 2018-09-14 | 东莞市联洲知识产权运营管理有限公司 | A kind of integrated circuit squash type packaging system |
| CN109346457B (en) * | 2018-09-29 | 2021-03-23 | 华侨大学 | IGBT power module with electromagnetic isolation function |
| CN109887892B (en) * | 2019-03-12 | 2021-12-21 | 如皋市大昌电子有限公司 | Square bridge rectifier and preparation process thereof |
| CN109890164B (en) * | 2019-03-18 | 2024-03-26 | 新乡市光明电器有限公司 | Strong-sealing electric control box |
| CN113270374A (en) * | 2021-04-30 | 2021-08-17 | 深圳芯能半导体技术有限公司 | IGBT power device |
| CN113540957B (en) * | 2021-09-16 | 2022-01-14 | 凯瑞电子(诸城)有限公司 | Assembly system of metal packaging shell and insulating terminal and control method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202352645U (en) * | 2011-11-30 | 2012-07-25 | 江苏宏微科技有限公司 | Packaging shell structure for semiconductor power module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5956231A (en) * | 1994-10-07 | 1999-09-21 | Hitachi, Ltd. | Semiconductor device having power semiconductor elements |
| US7230333B2 (en) * | 2005-04-21 | 2007-06-12 | International Rectifier Corporation | Semiconductor package |
| JP5168866B2 (en) * | 2006-09-28 | 2013-03-27 | 三菱電機株式会社 | Power semiconductor module |
| JP2008159862A (en) * | 2006-12-25 | 2008-07-10 | Hitachi Kokusai Electric Inc | Package structure of high-frequency electronic component |
| JP2008277327A (en) * | 2007-04-25 | 2008-11-13 | Toyota Industries Corp | Electronic apparatus |
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| CN202352645U (en) * | 2011-11-30 | 2012-07-25 | 江苏宏微科技有限公司 | Packaging shell structure for semiconductor power module |
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Address after: 213022 No. 18 middle Huashan Road, Xinbei District, Jiangsu, Changzhou Patentee after: MACMIC SCIENCE & TECHNOLOGY Co.,Ltd. Address before: 213022 No. 18 middle Huashan Road, Xinbei District, Jiangsu, Changzhou Patentee before: MACMIC SCIENCE & TECHNOLOGY Co.,Ltd. |