CN202352645U - Packaging shell structure for semiconductor power module - Google Patents
Packaging shell structure for semiconductor power module Download PDFInfo
- Publication number
- CN202352645U CN202352645U CN 201120485204 CN201120485204U CN202352645U CN 202352645 U CN202352645 U CN 202352645U CN 201120485204 CN201120485204 CN 201120485204 CN 201120485204 U CN201120485204 U CN 201120485204U CN 202352645 U CN202352645 U CN 202352645U
- Authority
- CN
- China
- Prior art keywords
- electrode
- wallboard
- housing
- power module
- tip holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
The utility model relates to a packaging shell structure for a semiconductor power module. At least four electrodes are embedded into the two sides of a shell respectively. An aluminum wire bonding seat of each electrode is arranged on a base on the inner side of each wallboard, and a connecting seat is arranged on the electrode seat outside each wallboard. Connecting pieces with internal threads are inserted into slots of the electrode seats respectively, and are connected with the connecting seats of the electrodes. Limiting bumps for limiting the connecting pieces are arranged on the end parts of elastic arms on the two sides of the slots of the electrode seats. At least four signal terminals are embedded into the wallboards of the shell. An aluminum wire bonding seat of each signal terminal is arranged on the base on the inner side of each wallboard, and the other sides of the signal terminals are extended out of the upper end faces of the wallboards of the shell. A cover plate is arranged at inner seam allowances of the wallboards of the shell, and is clamped with the inner walls of the wallboards of the shell. At least two mounting seats are arranged outside the wallboards of the shell. T-shaped bushing blocks are pressed on the mounting seats and a bottom plate. The packaging shell structure is rational; the bonding firmness of each electrode and each signal terminal is effectively improved; and an external copper bar is reliably arranged and conveniently assembled.
Description
Technical field
The utility model relates to a kind of semi-conductor power module package casing structure, belongs to semi-conductor power module manufacturing technology field.
Background technology
Semi-conductor power module is widely used in industry controls such as electric drive, Electric Machine Control; Numerous areas such as automobile driving and hybrid power, wind energy, welding machine, locomotive traction; Change the direct current (DC) of input into three-phase alternating current (AC) output, as various Switching Power Supplies.And the system power model mainly by semiconductor chip, cover formations such as cermet substrate (DBC), copper soleplate, housing, cover plate; Semiconductor chip and electrode are welded on and cover on cermet substrate or the base plate; And the bottom of covering the cermet substrate is fixed on the copper soleplate; Again through encapsulating with semiconductor chip with cover in the cermet substrate sealing and fixing housing, install on the housing with cover plate at last and seal, electrode is arranged in the electrode tip holder after bending.Because an electrode on the semi-conductor power module and an end of each terminal all are fixed on and cover on the cermet substrate; Each electrode and each terminal pass housing and end cap being electrically connected with realization and outside; Because housing or end cap are not fixed each electrode and each signal terminal, so each electrode is easy to rock with each signal terminal, at semi-conductor power module in the long-term work running; Because semiconductor chip all can receive the influence of factors such as mechanical oscillation, mechanical stress and thermal stress with each electrode and each terminal; Some semi-conductor power modules are work under vibration environment in addition, and therefore various stress and vibration force all can make each electrode and each signal terminal generation rock, and reach each bonding place; And reduce the fastness of the bonding point of each terminal and each electrode, cause the power loss that produces because of rocking.Secondly, because each electrode is arranged on the electrode tip holder after need bending, and higher to external copper bar installation requirement, otherwise in installation process, be prone to the fastness at electrode bonding place is damaged.Moreover; Is connected with copper bar because electrode is the back of bending at last, so the installed surface of electrode can't reach smooth fully, easy and electrode loose contact behind the copper bar is installed and the contact resistance that causes is excessive; And then cause the phenomenon of local overheating, equally also can influence the fastness of each electrode junction.Present its housing of disclosed semi-conductor power module is to be connected through securing member with base plate, and end cap is fixed on the housing, and not only complex structure, and assembly process is complicated, and installation effectiveness is not high.
Summary of the invention
The purpose of the utility model provides a kind of rational in infrastructure, effectively improves the fastness of each electrode and each signal terminal bonding, copper bar reliable installation, semi-conductor power module package casing structure easy to assembly.
The utility model is that the technical scheme that achieves the above object is: a kind of semi-conductor power module package casing structure; Comprise the housing of wallboard around having and be installed in cover plate and the base plate on the housing; It is characterized in that: at least four electrodes are rabbeted the wallboard place in the housing both sides respectively; The aluminium wire bonding seat of each electrode is arranged on the inboard base of wallboard, Connection Block is arranged on the corresponding electrode tip holder in the wallboard outside; And the Connection Block of each electrode has plane and the installing hole that joins with copper bar; The installing hole of Connection Block is corresponding with installing hole on the electrode tip holder separately, and the connector with internal thread is inserted into respectively in the slot of each electrode tip holder and joins with the Connection Block of electrode, and the elastic arm end of the slot both sides of electrode tip holder is provided with the spacing block set spacing to connector; At least four signal terminal interlockings are on the wallboard of housing; And the upper surface that the aluminium wire bonding seat of each signal terminal is arranged on the inboard base of wallboard, opposite side passes the housing wallboard; Cover plate is installed in the inner stopper place of the wallboard of housing; At least two card bases in cover plate bottom are installed in deck on the housing wallboard inwall or/and on the locked groove or/and at least two elasticity card bases are corresponding respectively; Housing is positioned at the wallboard outside and is provided with two mount pads at least, and T shape lining is crimped in the installing hole of installing hole and base plate on the mount pad.
The utility model is rabbeted the wallboard place at housing with each electrode and signal terminal; To strengthen the firm degree of each electrode and each signal terminal; In the time of no matter through supersonic bonding, because each electrode is to be fixed on the housing with each signal terminal, so each electrode and each signal terminal are difficult for rocking; Can avoid the power loss that causes owing to rocking, so can improve the fastness at each electrode and each signal terminal bonding place.Also fix by housing because of each signal terminal of each electrode; Not only be convenient to through the aluminium wire bonding with cover the cermet substrate; And improve the reliability of its solder joint, and semi-conductor power module is at work, especially under vibration environment; Can at utmost reduce semiconductor chip, each electrode and each signal terminal and influenced by mechanical oscillation, mechanical stress and thermal stress and act on its bonding point place, guarantee that power model can reliability Work under adverse circumstances.The Connection Block of each electrode of the utility model has the plane that joins with copper bar, need not to bend, and the client is when connecting with copper bar; The contact resistance problems of too that can not cause copper bar and each electrode loose contact and cause; Solve the local overheating phenomenon, made things convenient for the client to use, improved dependability.The utility model cover plate through card base or/and the firm deck that is connected to housing of elasticity card or/and on the locked groove, convenient and reliable assembly.The connector that the utlity model has screw is to be plugged in the slot of electrode tip holder, and spacing by the elastic arm of the slot both sides of electrode tip holder, and connector member is convenient, and is convenient to operation.
Description of drawings
Below in conjunction with accompanying drawing the embodiment of the utility model is made further detailed description.
Fig. 1 is the structural representation of the utility model semi-conductor power module package casing structure.
Fig. 2 is the structural representation of the utility model semi-conductor power module package casing structural demolition end cap.
Fig. 3 is that each electrode of the utility model semi-conductor power module package casing structure is bonded in the structural representation on the bottom with each signal terminal.
Wherein: 1-cover plate, 1-1-card base, 1-2-installed surface, 1-3-elasticity card base, 2-electrode, 2-1-aluminium wire bonding seat, 2-2-Connection Block; 2-21-notch seat, 2-22-conducting block, 3-housing, 3-1-inner stopper, 3-2-wallboard, 3-3-locked groove, 3-4-base; The 3-5-deck, 3-6-stepped hole, 3-7-mount pad, 3-8-slot, 3-9-elastic arm, 3-10-electrode tip holder; The 4-base plate, 5-signal terminal, 5-1-aluminium wire bonding seat, 6-T shape lining, 7-connector, 8-aluminium wire.
Embodiment
See shown in Fig. 1～3; The utility model semi-conductor power module package casing structure comprises the housing 3 of wallboard 3-2 around having and is installed in cover plate 1 and the base plate 4 on the housing 3, is welded with on the base plate 4 and covers the cermet substrate; At least four electrodes 2 are rabbeted the wallboard 3-2 place in housing 3 both sides respectively; The aluminium wire bonding seat 2-1 of each electrode 2 is arranged on that the inboard base 3-4 of wallboard 3-2 goes up, Connection Block 2-2 is arranged on each electrode tip holder 3-10 in the wallboard 3-2 outside, and the Connection Block 2-2 of each electrode 2 has plane and the installing hole that joins with copper bar, and the installing hole of this Connection Block 2-2 is corresponding with installing hole on the electrode tip holder 3-10 separately; When adopting four electrodes 2; Housing 3 is provided with four electrode tip holder 3-10, and the electrode tip holder 3-10 data on the housing 3 can be according to the designing requirement setting, and the utility model electrode 2 can adopt Z-shaped; And form reliable the contact with external copper bar, and reduce contact resistance through the plane on the Connection Block 2-2; Or it is as shown in Figure 2; The Connection Block 2-2 of the utility model electrode 2 is made up of notch seat 2-21 and conducting block 2-22; This electrode 2 can adopt L shaped, and conducting block 2-22 is installed on the confined planes of electrode tip holder 3-10 and joins with notch seat 2-21 on the Connection Block 2-2 of electrode 2, and the notch seat 2-21 end face of the utility model Connection Block 2-2 is the inclined-plane; The inclined-plane of the inclined-plane of conducting block 2-22 and notch seat 2-21 end joins; Keeping conducting block 2-22 well to contact with Connection Block 2-2, aluminium wire 8 is bonded in the aluminium wire bonding seat 2-1 of electrode 2 and covers on the cermet substrate through ultrasonic wave, semiconductor chip is welded on and covers on the cermet substrate.See Fig. 1, shown in 2; The Connection Block 2-2 that the connector 7 that the utlity model has internal thread is inserted into respectively in the slot 3-8 of each electrode tip holder 3-10 with electrode 2 joins; The elastic arm 3-9 end of the slot 3-8 both sides of electrode tip holder 3-10 is provided with the spacing block set spacing to connector 7, and this spacing block set and connector 7 end faces join after connector 7 is in place, and connector 7 can not be moved; See shown in Figure 2; Its bottom surface of elastic arm 3-9 and side on the electrode tip holder 3-10 have breach, make elastic arm 3-9 have certain elasticity, in the both convenient slot 3-8 with connector 7 insertion electrode tip holder 3-10; Again can be conveniently the spacing block set of elastic arm 3-9 end through both sides carry out spacing to connector 7; Each external copper bar is placed on each electrode 2 and is installed in connector 7 through bolt, and copper bar reliably is connected with each electrode 2, realizes the input and output of the utility model power model.
See shown in Fig. 1～3; 5 interlockings of at least four signal terminals of the utility model are on the wallboard 3-2 of housing 3; This signal terminal 5 can be grid-control terminal and temperature monitoring terminal; The aluminium wire bonding seat 5-1 of each signal terminal 5 is arranged on the upper surface that the inboard base 3-4 of wallboard 3-2 goes up, opposite side passes housing 3 wallboard 3-2, and this signal terminal 5 can be L shaped, so can each signal terminal 5 be fixed through the wallboard 3-2 of housing 3; Ultrasonic wave is bonded in aluminium wire 8 the aluminium wire bonding seat 5-1 of signal terminal 5 and covers the cermet substrate, each control signal is introduced and detection signal is exported through each signal terminal 5.
See shown in Fig. 1～3; The utility model cover plate 1 is installed in the inner stopper 3-1 place of the wallboard 3-2 of housing 3; The installed surface 1-2 of cover plate 1 periphery is installed in the inner stopper 3-1 place of wallboard 3-2; And at least two card base 1-1 of cover plate 1 bottom or with at least two on deck 3-5 on the corresponding respectively wallboard 3-2 inwall that is installed in housing 3 of elasticity card base 1-3 or/and locked groove 3-3 place, see shown in Figure 1, but cover plate 1 bottom four card base 1-1 of employing are installed in respectively on four deck 3-5 of housing 3 wallboard 3-2 inwalls; This cover plate 1 bottom is provided with two elasticity card base 1-3; Elasticity card base 1-3 is connected to the locked groove 3-3 place on the wallboard 3-2 inwall of housing 3, cover plate 1 is connected in the housing 3 convenient and reliable assembly.
See shown in Fig. 1～3; The utility model housing 3 is positioned at the wallboard 3-2 outside and is provided with at least two mount pad 3-7; T shape lining 6 is crimped in the installing hole of installing hole and base plate 4 on the mount pad 3-7, has bulge loop on these T shape lining 6 lower, outer perimeter, and this bulge loop is connected to the bottom surface of base plate 4; Can realize being connected with base plate 4 through T shape lining 6, shell 3 firmly is connected with base plate 4 reliably.
See shown in Fig. 1～3; The wallboard 3-2 round angle of the utility model housing 3 is provided with stepped hole 3-6; The base 3-4 of housing 3 is provided with location notch or the positioning convex spacing to drive plate; Four self-tapping screws pass drive plate and screw on the nut that is arranged in the housing 3 stepped hole 3-6, make things convenient for the client that drive plate is connected with housing 3.
Claims (5)
1. semi-conductor power module package casing structure; Comprise the housing (3) of wallboard (3-2) around having and be installed in cover plate (1) and the base plate (4) on the housing (3); It is characterized in that: at least four electrodes (2) are rabbeted respectively at the wallboard (3-2) of housing (3) both sides and are located; The aluminium wire bonding seat (2-1) of each electrode (2) is arranged on the inboard base (3-4) of wallboard (3-2), Connection Block (2-2) is arranged on the corresponding electrode tip holder (3-10) in wallboard (3-2) outside; And the Connection Block (2-2) of each electrode (2) has plane and the installing hole that joins with copper bar; The installing hole of Connection Block (2-2) is corresponding with installing hole on the electrode tip holder (3-10) separately; Connector (7) with internal thread is inserted into respectively in the slot (3-8) of each electrode tip holder (3-10) and joins with the Connection Block (2-2) of electrode (2), and elastic arm (3-9) end of slot (3-8) both sides of electrode tip holder (3-10) is provided with the spacing spacing block set of connector (7); At least four signal terminals (5) interlocking is on the wallboard (3-2) of housing (3); And the aluminium wire bonding seat (5-1) of each signal terminal (5) is arranged on the upper surface that the inboard base (3-4) of wallboard (3-2) is gone up, opposite side passes housing (3) wallboard (3-2); Cover plate (1) is installed in the inner stopper (3-1) of the wallboard (3-2) of housing (3) and locates; Cover plate (1) bottom at least two card bases (1-1) or/and at least two elasticity card bases (1-3) respectively correspondence be installed in deck (3-5) on housing (3) wallboard (3-2) inwall or/and on the locked groove (3-3); Housing (3) is positioned at wallboard (3-2) outside and is provided with two mount pads (3-7) at least, and T shape lining (6) is crimped in the installing hole of installing hole and base plate (4) on the mount pad (3-7).
2. semi-conductor power module package casing structure according to claim 1; It is characterized in that: the Connection Block (2-2) of said electrode (2) is made up of notch seat (2-21) and conducting block (2-22), and conducting block (2-22) is installed on the confined planes of electrode tip holder (3-10) and joins with notch seat (2-21) on the Connection Block (2-2) of electrode (2).
3. semi-conductor power module package casing structure according to claim 1 is characterized in that: the bottom surface and the side of the elastic arm (3-9) of said electrode tip holder (3-10) have breach.
4. semi-conductor power module package casing structure according to claim 1 is characterized in that: wallboard (3-2) round angle of said housing (3) is provided with stepped hole (3-6), and the base (3-4) of housing (3) is provided with location notch or the positioning convex spacing to drive plate.
5. semi-conductor power module package casing structure according to claim 1 is characterized in that: said T shape lining (6) lower, outer perimeter has bulge loop, and bulge loop is connected to the bottom surface of base plate (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120485204 CN202352645U (en) | 2011-11-30 | 2011-11-30 | Packaging shell structure for semiconductor power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120485204 CN202352645U (en) | 2011-11-30 | 2011-11-30 | Packaging shell structure for semiconductor power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202352645U true CN202352645U (en) | 2012-07-25 |
Family
ID=46541626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120485204 Withdrawn - After Issue CN202352645U (en) | 2011-11-30 | 2011-11-30 | Packaging shell structure for semiconductor power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202352645U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364676A (en) * | 2011-11-30 | 2012-02-29 | 江苏宏微科技有限公司 | Packaging shell structure for semiconductor power module |
| CN103140103A (en) * | 2013-01-28 | 2013-06-05 | 江苏宏微科技股份有限公司 | Encapsulation structure of intelligent power module |
-
2011
- 2011-11-30 CN CN 201120485204 patent/CN202352645U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364676A (en) * | 2011-11-30 | 2012-02-29 | 江苏宏微科技有限公司 | Packaging shell structure for semiconductor power module |
| CN102364676B (en) * | 2011-11-30 | 2013-10-30 | 江苏宏微科技有限公司 | Packaging shell structure for semiconductor power module |
| CN103140103A (en) * | 2013-01-28 | 2013-06-05 | 江苏宏微科技股份有限公司 | Encapsulation structure of intelligent power module |
| CN103140103B (en) * | 2013-01-28 | 2015-12-23 | 台达电子企业管理（上海）有限公司 | The encapsulating structure of Intelligent Power Module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20120725 Effective date of abandoning: 20131030 |
|
| RGAV | Abandon patent right to avoid regrant |