CN102340288A - Radio-frequency integrated band-pass filter with impedance match - Google Patents

Radio-frequency integrated band-pass filter with impedance match Download PDF

Info

Publication number
CN102340288A
CN102340288A CN2010102328262A CN201010232826A CN102340288A CN 102340288 A CN102340288 A CN 102340288A CN 2010102328262 A CN2010102328262 A CN 2010102328262A CN 201010232826 A CN201010232826 A CN 201010232826A CN 102340288 A CN102340288 A CN 102340288A
Authority
CN
China
Prior art keywords
nmos
circuit
transistor
impedance matching
radio frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2010102328262A
Other languages
Chinese (zh)
Other versions
CN102340288B (en
Inventor
刘欣
张海英
赵磊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ruili Flat Core Microelectronics Guangzhou Co Ltd
Original Assignee
Institute of Microelectronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Priority to CN201010232826.2A priority Critical patent/CN102340288B/en
Publication of CN102340288A publication Critical patent/CN102340288A/en
Application granted granted Critical
Publication of CN102340288B publication Critical patent/CN102340288B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Networks Using Active Elements (AREA)

Abstract

The invention relates to a radio-frequency integrated band-pass filter with impedance match, belonging to the technical field of design of integrated circuits. Based on a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process, by utilizing an active negative resistance compensation technology, the radio-frequency integrated band-pass filter with the impedance match is composed of two LC (Inductance-Capacitance) resonance circuits, two input impedance match circuits, two output impedance match circuits, an active negative resistance compensation circuit and two NMOS (N-channel Metal Oxide Semiconductor) tail current transistors, wherein the two LC resonance circuits, the two input impedance match circuits and the two output impedance match circuits have the same connection way and symmetrical structures. The adjustment on the central frequency, the band-pass gain and the bandwidth of the band-pass filter can be realized through adjusting a bias voltage of a varactor and adjusting bias voltages of two NMOS tail current transistor grids. The radio-frequency integrated band-pass filter provided by the invention not only can carry out integration on a chip by adopting the CMOS process, but also is provided with an input-output impedance match circuit on the chip, and discrete devices out of the chip are not needed, so that the integration level is greatly improved and a feasible scheme for realizing single chip integration is supplied to a radio-frequency front end of a wireless receiver.

Description

A kind of radio frequency integrated belt bandpass filter with impedance matching
Technical field
The present invention relates to a kind of radio frequency integrated belt bandpass filter, belong to the IC design technical field with impedance matching.
Background technology
In recent years, along with developing rapidly of wireless communications market, increasingly high to low cost, the miniaturization requirement of mobile communication equipments such as mobile phone, GPS navigation equipment, electromedical equipment.Develop as most important RF front-end module in the GSM also forward SoC direction, satisfy the requirement of system's low cost and miniaturization.
In GSM, RF front-end module is used for modulated transmit signal and demodulated received signal, is example with the RF front-end module in the receiver, and its composition comprises circuit such as low noise amplifier, frequency mixer, frequency synthesizer, band pass filter.Along with the fast development of CMOS technology and increasingly mature, make core circuits such as low noise amplifier in the radio-frequency front-end, frequency mixer, frequency synthesizer can adopt CMOS technology to realize.And radio frequency band filter only; Because its operating frequency is higher; Require harsh to inserting loss, noise factor etc.; Radio frequency band filter is difficult to reach the requirement of receiver system on the sheet of realizing with CMOS technology, and therefore, present common practice is to adopt outer SAW (the Surface Acoustic Wave) band pass filter of the higher sheet of performance.Clearly this way is unfavorable for the miniaturization and cheapization of system; Especially for the mobile communication equipment that possesses plurality of communication schemes, a plurality of frequency ranges of support; The outer band pass filter of sheet that needs a plurality of different frequency ranges; So not only make the volume of system become very huge, and improved the cost of system, increased power consumption.So, be badly in need of that the integrated CMOS radio frequency band filter replaces the outer SAW band pass filter of sheet on the high performance sheet that meets the GSM requirement, thereby the complete monolithic of realizing radio-frequency front-end is integrated.
Summary of the invention
The present invention is directed to present radio frequency band filter and be difficult to carry out single chip integrated deficiency together, a kind of radio frequency integrated belt bandpass filter with impedance matching is provided with RF front-end circuit.
The technical scheme that the present invention solves the problems of the technologies described above is following: a kind of radio frequency integrated belt bandpass filter with impedance matching comprises a LC resonant tank, the 2nd LC resonant tank, first input impedance matching circuit, second input impedance matching circuit, the first output impedance match circuit, the second output impedance match circuit, active negative resistance compensating circuit, a NMOS tail current transistor and the 2nd NMOS tail current transistor; A said LC resonant tank links to each other with the 2nd LC resonant tank; A said LC resonant tank links to each other with first input impedance matching circuit, the first output impedance match circuit and active negative resistance compensating circuit respectively; Said the 2nd LC resonant tank links to each other with second input impedance matching circuit, the second output impedance match circuit and active negative resistance compensating circuit respectively; The first differential signal input of said first input impedance matching circuit and radio frequency integrated belt bandpass filter links to each other; The first differential signal output of said first output impedance match circuit and radio frequency integrated belt bandpass filter links to each other; The second differential signal input of said second input impedance matching circuit and radio frequency integrated belt bandpass filter links to each other; The second differential signal output of said second output impedance match circuit and radio frequency integrated belt bandpass filter links to each other; Said active negative resistance compensating circuit links to each other with the 2nd NMOS tail current transistor; A said NMOS tail current transistor links to each other with second input impedance matching circuit with first input impedance matching circuit respectively; The grid of the grid of a said NMOS tail current transistor and the 2nd NMOS tail current transistor connects first bias voltage and second bias voltage respectively, the source grounding of the source electrode of a said NMOS tail current transistor and the 2nd NMOS tail current transistor.
On the basis of technique scheme, the present invention can also do following improvement.
Further; Identical and the symmetrical configuration of circuit connecting mode of a said LC resonant tank and the 2nd LC resonant tank; Identical and the symmetrical configuration of circuit connecting mode of said first input impedance matching circuit and second input impedance matching circuit, the identical and symmetrical configuration of circuit connecting mode of the said first output impedance match circuit and the second output impedance match circuit.
Further, a said LC resonant tank comprises a CMOS spiral inductance and first varactor that parallel connection links to each other; Said the 2nd LC resonant tank comprises the 2nd CMOS spiral inductance and second varactor that parallel connection links to each other; A CMOS spiral inductance and the 2nd CMOS spiral inductance that said first input impedance matching circuit comprises a NMOS common source input transistors and is connected on its grid and source electrode respectively; The 3rd CMOS spiral inductance and the 4th CMOS spiral inductance that said second input impedance matching circuit comprises the 2nd NMOS common source input transistors and is connected on its grid and source electrode respectively; The said first output impedance match circuit comprises that first nmos source that series connection links to each other follows a transistor and a NMOS bias current transistor; The said second output impedance match circuit comprises that second nmos source that series connection links to each other follows transistor and the 2nd NMOS bias current transistor; Said active negative resistance compensating circuit comprises cross-linked first nmos pass transistor and second nmos pass transistor each other.
Further; In a said LC resonant tank; A termination power voltage wherein after the one CMOS spiral inductance and the first varactor parallel connection, the drain electrode that first nmos source is followed first nmos pass transistor in transistorized grid and the active negative resistance compensating circuit in the drain electrode of a NMOS common source input transistors in the other end and first input impedance matching circuit, the first output impedance match circuit links together.
Further, in said first input impedance matching circuit, an end of a CMOS spiral inductance links to each other with the grid of a NMOS common source input transistors, and the other end links to each other with the first differential signal input of radio frequency integrated belt bandpass filter; One end of the 2nd CMOS spiral inductance links to each other with the source electrode of a NMOS common source input transistors, and the other end links to each other with the drain electrode of a NMOS tail current transistor.
Further; In the said first output impedance match circuit; First nmos source is followed transistor drain and is connect supply voltage; First nmos source is followed transistorized source electrode and is linked to each other with the drain electrode of a NMOS bias current transistor, and is connected to the first differential signal output of radio frequency integrated belt bandpass filter together; The grid of the one NMOS bias current transistor connects first bias voltage, the source ground of a NMOS bias current transistor.
Further; In said the 2nd LC resonant tank; A termination power voltage wherein after the 2nd CMOS spiral inductance and the second varactor parallel connection, the drain electrode that second nmos source is followed second nmos pass transistor in transistorized grid and the active negative resistance compensating circuit in the drain electrode of the 2nd NMOS common source input transistors in the other end and second input impedance matching circuit, the second output impedance match circuit links together.
Further, in said second input impedance matching circuit, an end of the 3rd CMOS spiral inductance links to each other with the grid of the 2nd NMOS common source input transistors, and the other end links to each other with the second differential signal input of radio frequency integrated belt bandpass filter; One end of the 4th CMOS spiral inductance links to each other with the source electrode of the 2nd NMOS common source input transistors, and the other end links to each other with the drain electrode of the 2nd NMOS tail current transistor.
Further; In the said second output impedance match circuit; Second nmos source is followed transistor drain and is connect supply voltage; Second nmos source is followed transistorized source electrode and is linked to each other with the drain electrode of the 2nd NMOS bias current transistor, and is connected to the second differential signal output of radio frequency integrated belt bandpass filter together; The grid of the 2nd NMOS bias current transistor connects first bias voltage, the source ground of the 2nd NMOS bias current transistor.
Further; In said active negative resistance compensating circuit; The grid of first nmos pass transistor links to each other with the drain electrode of second nmos pass transistor; The grid of second nmos pass transistor links to each other with the drain electrode of first nmos pass transistor, and first nmos pass transistor links to each other with the source electrode of second nmos pass transistor, and is connected to the drain electrode of the 2nd NMOS tail current transistor.
The invention has the beneficial effects as follows: the present invention has the radio frequency integrated belt bandpass filter of impedance matching based on CMOS technology; Adopt active negative resistance compensation technique; Improved the quality factor of CMOS on-chip spiral inductor, integrated on the sheet for radio frequency band filter a kind of feasible program is provided; In addition; The present invention also provides impedance match technique on the sheet; Make input, output impedance all can match 50 Ω of standard radio frequency transmission line, make this band pass filter when practical application, need not sheet external impedance matching network, realized that the complete monolithic of radio-frequency front-end is integrated; Practiced thrift the pcb board area, helped mobile communication equipment to miniaturization and cheapization development.
Description of drawings
Fig. 1 has the circuit theory diagrams of the radio frequency integrated belt bandpass filter of impedance matching for the present invention.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and characteristic are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
Fig. 1 has the circuit theory diagrams of the radio frequency integrated belt bandpass filter of impedance matching for the present invention.As shown in Figure 1, said radio frequency integrated belt bandpass filter with impedance matching comprises a LC resonant tank 101, the 2nd LC resonant tank 102, first input impedance matching circuit 103, second input impedance matching circuit 104, the first output impedance match circuit 105, the second output impedance match circuit 106, active negative resistance compensating circuit 107, a NMOS tail current transistor M gWith the 2nd NMOS tail current transistor M qThe one LC resonant tank 101 links to each other with the 2nd LC resonant tank 102; The one LC resonant tank 101 links to each other with active negative resistance compensating circuit 107 with first input impedance matching circuit 103, the first output impedance match circuit 105 respectively; The 2nd LC resonant tank 102 links to each other with active negative resistance compensating circuit 107 with second input impedance matching circuit 104, the second output impedance match circuit 106 respectively; The first differential signal input V of first input impedance matching circuit 103 and radio frequency integrated belt bandpass filter InpLink to each other; The first differential signal output V of the first output impedance match circuit 105 and radio frequency integrated belt bandpass filter Out1Link to each other; The second differential signal input V of second input impedance matching circuit 104 and radio frequency integrated belt bandpass filter InnLink to each other; The second differential signal output V of the second output impedance match circuit 106 and radio frequency integrated belt bandpass filter Out2Link to each other; Active negative resistance compensating circuit 107 and the 2nd NMOS tail current transistor M qLink to each other; The one NMOS tail current transistor M gLink to each other with second input impedance matching circuit 104 with first input impedance matching circuit 103 respectively; The one NMOS tail current transistor M gGrid and the 2nd NMOS tail current transistor M qGrid meet the first bias voltage V respectively gWith the second bias voltage V q, a NMOS tail current transistor M gSource electrode and the 2nd NMOS tail current transistor M qSource grounding.
Identical and the symmetrical configuration of circuit connecting mode of the one LC resonant tank 101 and the 2nd LC resonant tank 102; Identical and the symmetrical configuration of circuit connecting mode of first input impedance matching circuit 103 and second input impedance matching circuit 104, the identical and symmetrical configuration of circuit connecting mode of the first output impedance match circuit 105 and the second output impedance match circuit 106.
The one LC resonant tank 101 comprises the CMOS spiral inductance L that parallel connection links to each other 1With the first varactor C 1The 2nd LC resonant tank 102 comprises the 2nd CMOS spiral inductance L that parallel connection links to each other 2With the second varactor C 2First input impedance matching circuit 103 comprises a NMOS common source input transistors M G1An and CMOS spiral inductance L who is connected on its grid and source electrode respectively G1With the 2nd CMOS spiral inductance L S1Second input impedance matching circuit 104 comprises the 2nd NMOS common source input transistors M G2And the 3rd CMOS spiral inductance L that is connected on its grid and source electrode respectively G2With the 4th CMOS spiral inductance L S2The first output impedance match circuit 105 comprises that first nmos source that series connection links to each other follows transistor M S1With a NMOS bias current transistor M B1The second output impedance match circuit 106 comprises that second nmos source that series connection links to each other follows transistor M S2With the 2nd NMOS bias current transistor M B2Active negative resistance compensating circuit 107 comprises the cross-linked first nmos pass transistor M each other Q1With the second nmos pass transistor M Q2
In a LC resonant tank 101, a CMOS spiral inductance L 1With the first varactor C 1A termination power voltage wherein after the parallel connection, a NMOS common source input transistors M in the other end and first input impedance matching circuit 103 G1Drain electrode, the first output impedance match circuit 105 in first nmos source follow transistor M S1Grid and active negative resistance compensating circuit 107 in the first nmos pass transistor M Q1Drain electrode link together.In first input impedance matching circuit 103, a CMOS spiral inductance L G1An end and a NMOS common source input transistors M G1Grid link to each other the first differential signal input V of the other end and radio frequency integrated belt bandpass filter InpLink to each other; The 2nd CMOS spiral inductance L S1An end and a NMOS common source input transistors M G1Source electrode link to each other the other end and a NMOS tail current transistor M gDrain electrode link to each other.In the first output impedance match circuit 105, first nmos source is followed transistor M S1Drain electrode connect supply voltage, first nmos source is followed transistor M S1A source electrode and a NMOS bias current transistor M B1Drain electrode link to each other, and be connected to the first differential signal output V of radio frequency integrated belt bandpass filter together Out1The one NMOS bias current transistor M B1Grid meet the first bias voltage V g, a NMOS bias current transistor M B1Source ground.
In the 2nd LC resonant tank 102, the 2nd CMOS spiral inductance L 2With the second varactor C 2A termination power voltage wherein after the parallel connection, the 2nd NMOS common source input transistors M in the other end and second input impedance matching circuit 104 G2Drain electrode, the second output impedance match circuit 106 in second nmos source follow transistor M S2Grid and active negative resistance compensating circuit 107 in the second nmos pass transistor M Q2Drain electrode link together.In second input impedance matching circuit 104, the 3rd CMOS spiral inductance L G2An end and the 2nd NMOS common source input transistors M G2Grid link to each other the second differential signal input V of the other end and radio frequency integrated belt bandpass filter InnLink to each other; The 4th CMOS spiral inductance L S2An end and the 2nd NMOS common source input transistors M G2Source electrode link to each other the other end and the 2nd NMOS tail current transistor M qDrain electrode link to each other.In the second output impedance match circuit 106, second nmos source is followed transistor M S2Drain electrode connect supply voltage, second nmos source is followed transistor M S2Source electrode and the 2nd NMOS bias current transistor M B2Drain electrode link to each other, and be connected to the second differential signal output V of radio frequency integrated belt bandpass filter together Out2The 2nd NMOS bias current transistor M B2Grid meet the first bias voltage V q, the 2nd NMOS bias current transistor M B2Source ground.
In active negative resistance compensating circuit 107, the first nmos pass transistor M Q1The grid and the second nmos pass transistor M Q2Drain electrode link to each other the second nmos pass transistor M Q2The grid and the first nmos pass transistor M Q1Drain electrode link to each other the first nmos pass transistor M Q1With the second nmos pass transistor M Q2Source electrode link to each other, and be connected to the 2nd NMOS tail current transistor M qDrain electrode.
The present invention provides a kind of input, output impedance match circuit for radio frequency band filter, adopts source degeneracy induction structure that input impedance is mated; Adopt source follower structure that output impedance is mated; Make it can match the radio frequency transmission line impedence of standard; Further; In order to improve the quality factor of radio frequency band filter, promptly compensate the loss of introducing by electric capacity on on-chip CMOS spiral inductance and the sheet, adopted active negative resistance circuit compensation technique.
Operation principle of the present invention is: by the LC resonant tank produce the centre frequency of band pass filter
f 0 = 1 2 π LC ,
Regulate the bias voltage of varactor in the LC resonant tank, capacitance changes thereupon, and the centre frequency of band pass filter also can change thereupon.Increase the bias voltage of varactor in the LC resonant tank, the centre frequency of band pass filter reduces; Otherwise the centre frequency of band pass filter raises.
Adopt active negative resistance compensation technique, promptly utilize crossing coupling transistor M Q1With M Q2Produce a negative resistance, be used for compensating the ohmic loss of on-chip CMOS spiral inductance wire coil and resistance substrate introducing, solve the lower problem of on-chip spiral inductor quality factor, realize the CMOS radio frequency integrated belt bandpass filter of high quality factor with this.Definition according to the band pass filter quality factor:
Q = f 0 Δf
(Q is the quality factor of band pass filter, f 0Be the centre frequency of band pass filter, Δ f is the bandwidth of band pass filter), regulate tail current transistor M qBias voltage V q, the bandwidth of band pass filter, promptly the quality factor of band pass filter also change thereupon.Increase bias voltage V q, tail current increases, and the bandwidth of band pass filter narrows down, and promptly the quality factor of band pass filter are improved; Otherwise the bandwidth of band pass filter broadens, and promptly the quality factor of band pass filter reduce.
Regulate another NMOS tail current transistor M gBias voltage V g, the passband gain of band pass filter can change thereupon.Increase bias voltage V g, the passband gain of band pass filter also increases thereupon; Otherwise the passband gain of band pass filter can reduce thereupon.
Employing source degeneracy induction structure matees input impedance, promptly at input transistors M G1/ M G2Grid and the source electrode inductance L of respectively connecting G1/ L G2And L S1/ L S2, utilize L G1/ L G2, L S1/ L S2With M G1/ M G2Grid source capacitor C Gs1/ C Gs2Resonance, the imaginary part that makes input impedance are zero, utilize the inductance L of source electrode S1/ L S2Obtain the input impedance of positive real part,, can make input impedance matching to 50 Ω through choosing suitable inductance value.
What the output impedance match circuit adopted is source follower structure, promptly follows pipe M through suitable selection source electrode S1/ M S2Size make its output impedance match 50 Ω, the size of its output impedance is by M S1/ M S2Breadth length ratio and flow through M S1/ M S2Electric current decision.
Radio frequency integrated belt bandpass filter with impedance matching of the present invention is in the process of work, and the radio-frequency voltage signal passes through the inductance L in the input impedance matching circuit 103,104 with difference form G1And L G2Import pipe M from difference G1And M G2Grid input, through M G1And M G2After be transformed into current signal, input to the LC resonant selecting frequency load in the LC resonant tank 101,102, allow the signal that passes through in the select tape bandpass filter passband, suppress out of band signal, then through the output of output impedance match circuit.Wherein, LC resonant tank 101,102 is used for producing the centre frequency of band pass filter, through regulating the bias voltage of varactor, changes capacitance, centre frequency that can the accommodation zone bandpass filter; NMOS tail current transistor M gBe used for to importing to pipe M G1And M G2Operating current is provided, through regulating its bias voltage V gIts electric current of may command, and then the passband gain of control band pass filter; Another NMOS tail current transistor M qBe used for being the negative resistance M in the active negative resistance compensating circuit 107 Q1And M Q2Operating current is provided, through regulating its bias voltage V qIts electric current of may command, and then the bandwidth of control band pass filter.In practical application, can regulate bias voltage, the M of varactor according to design requirement gBias voltage V g, and M qBias voltage V q, obtain centre frequency, passband gain and the bandwidth of required band pass filter.
Wherein, the operation principle of input impedance matching circuit 103,104 is: because when adopting nmos pass transistor as input, its input impedance shows as a real part and a capacitive reactances (by the grid source capacitor C of nmos pass transistor GsIntroduce).If will make input impedance only show as the positive real part of one 50 Ω, need be at input NMOS transistor M G1And M G2Grid and source electrode series inductance L respectively G1, L S1And L G2, L S2, balance out capacitive reactances.The input impedance of this moment can be expressed as:
Z in = R g + L s g m C gs + j [ ω ( L g + L s ) - 1 ωC gs ]
Wherein, R gAnd g mBe respectively the grid series equivalent resistance and the mutual conductance of nmos pass transistor, ω=g m/ C GsIt is the cut-off frequency of nmos pass transistor.Obviously, L S1, L S2Respectively at M G1, M G2Grid introduce a real impedance, the real part of input impedance is provided; L G1, L G2Respectively with C Gs1, C Gs2Resonance makes that the imaginary part of input impedance is zero, thereby realizes impedance matching.
Wherein, the operation principle of output impedance match circuit 105,106 is: utilize source follower can produce a 1/g mOutput impedance, at two difference output ends of band pass filter nmos source follower of connecting respectively, regulate source electrode and follow the size of pipe and the size of bias current, can obtain the output impedance of 50 required Ω.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. radio frequency integrated belt bandpass filter with impedance matching; It is characterized in that said radio frequency integrated belt bandpass filter comprises a LC resonant tank (101), the 2nd LC resonant tank (102), first input impedance matching circuit (103), second input impedance matching circuit (104), the first output impedance match circuit (105), the second output impedance match circuit (106), active negative resistance compensating circuit (107), a NMOS tail current transistor (M g) and the 2nd NMOS tail current transistor (M q); A said LC resonant tank (101) links to each other with the 2nd LC resonant tank (102); A said LC resonant tank (101) links to each other with active negative resistance compensating circuit (107) with first input impedance matching circuit (103), the first output impedance match circuit (105) respectively; Said the 2nd LC resonant tank (102) links to each other with active negative resistance compensating circuit (107) with second input impedance matching circuit (104), the second output impedance match circuit (106) respectively; The first differential signal input (V of said first input impedance matching circuit (103) and radio frequency integrated belt bandpass filter Inp) link to each other; The first differential signal output (V of said first output impedance match circuit (105) and radio frequency integrated belt bandpass filter Out1) link to each other; The second differential signal input (V of said second input impedance matching circuit (104) and radio frequency integrated belt bandpass filter Inn) link to each other; The second differential signal output (V of said second output impedance match circuit (106) and radio frequency integrated belt bandpass filter Out2) link to each other; Said active negative resistance compensating circuit (107) and the 2nd NMOS tail current transistor (M q) link to each other; A said NMOS tail current transistor (M g) link to each other with second input impedance matching circuit (104) with first input impedance matching circuit (103) respectively; A said NMOS tail current transistor (M g) grid and the 2nd NMOS tail current transistor (M q) grid meet the first bias voltage (V respectively g) and the second bias voltage (V q), a said NMOS tail current transistor (M g) source electrode and the 2nd NMOS tail current transistor (M q) source grounding.
2. the radio frequency integrated belt bandpass filter with impedance matching according to claim 1; It is characterized in that; Identical and the symmetrical configuration of circuit connecting mode of a said LC resonant tank (101) and the 2nd LC resonant tank (102); Identical and the symmetrical configuration of circuit connecting mode of said first input impedance matching circuit (103) and second input impedance matching circuit (104), the identical and symmetrical configuration of circuit connecting mode of the said first output impedance match circuit (105) and the second output impedance match circuit (106).
3. the radio frequency integrated belt bandpass filter with impedance matching according to claim 1 is characterized in that, a said LC resonant tank (101) comprises the CMOS spiral inductance (L that parallel connection links to each other 1) and the first varactor (C 1); Said the 2nd LC resonant tank (102) comprises the 2nd CMOS spiral inductance (L that parallel connection links to each other 2) and the second varactor (C 2); Said first input impedance matching circuit (103) comprises a NMOS common source input transistors (M G1) and the CMOS spiral inductance (L that is connected on its grid and source electrode respectively G1) and the 2nd CMOS spiral inductance (L S1); Said second input impedance matching circuit (104) comprises the 2nd NMOS common source input transistors (M G2) and the 3rd CMOS spiral inductance (L that is connected on its grid and source electrode respectively G2) and the 4th CMOS spiral inductance (L S2); The said first output impedance match circuit (105) comprises that first nmos source that series connection links to each other follows transistor (M S1) and a NMOS bias current transistor (M B1); The said second output impedance match circuit (106) comprises that second nmos source that series connection links to each other follows transistor (M S2) and the 2nd NMOS bias current transistor (M B2); Said active negative resistance compensating circuit (107) comprises the cross-linked first nmos pass transistor (M each other Q1) and the second nmos pass transistor (M Q2).
4. the radio frequency integrated belt bandpass filter with impedance matching according to claim 3 is characterized in that, in a said LC resonant tank (101), and a CMOS spiral inductance (L 1) and the first varactor (C 1) a termination power voltage wherein after the parallel connection, a NMOS common source input transistors (M in the other end and first input impedance matching circuit (103) G1) drain electrode, the first output impedance match circuit (105) in first nmos source follow transistor (M S1) grid and active negative resistance compensating circuit (107) in the first nmos pass transistor (M Q1) drain electrode link together.
5. the radio frequency integrated belt bandpass filter with impedance matching according to claim 3 is characterized in that, in said first input impedance matching circuit (103), and a CMOS spiral inductance (L G1) an end and a NMOS common source input transistors (M G1) grid link to each other the first differential signal input (V of the other end and radio frequency integrated belt bandpass filter Inp) link to each other; The 2nd CMOS spiral inductance (L S1) an end and a NMOS common source input transistors (M G1) source electrode link to each other the other end and a NMOS tail current transistor (M g) drain electrode link to each other.
6. the radio frequency integrated belt bandpass filter with impedance matching according to claim 3 is characterized in that, in the said first output impedance match circuit (105), first nmos source is followed transistor (M S1) drain electrode connect supply voltage, first nmos source is followed transistor (M S1) a source electrode and a NMOS bias current transistor (M B1) drain electrode link to each other, and be connected to the first differential signal output (V of radio frequency integrated belt bandpass filter together Out1); The one NMOS bias current transistor (M B1) grid meet the first bias voltage (V g), a NMOS bias current transistor (M B1) source ground.
7. the radio frequency integrated belt bandpass filter with impedance matching according to claim 3 is characterized in that, in said the 2nd LC resonant tank (102), and the 2nd CMOS spiral inductance (L 2) and the second varactor (C 2) a termination power voltage wherein after the parallel connection, the 2nd NMOS common source input transistors (M in the other end and second input impedance matching circuit (104) G2) drain electrode, the second output impedance match circuit (106) in second nmos source follow transistor (M S2) grid and active negative resistance compensating circuit (107) in the second nmos pass transistor (M Q2) drain electrode link together.
8. the radio frequency integrated belt bandpass filter with impedance matching according to claim 3 is characterized in that, in said second input impedance matching circuit (104), and the 3rd CMOS spiral inductance (L G2) an end and the 2nd NMOS common source input transistors (M G2) grid link to each other the second differential signal input (V of the other end and radio frequency integrated belt bandpass filter Inn) link to each other; The 4th CMOS spiral inductance (L S2) an end and the 2nd NMOS common source input transistors (M G2) source electrode link to each other the other end and the 2nd NMOS tail current transistor (M q) drain electrode link to each other.
9. the radio frequency integrated belt bandpass filter with impedance matching according to claim 3 is characterized in that, in the said second output impedance match circuit (106), second nmos source is followed transistor (M S2) drain electrode connect supply voltage, second nmos source is followed transistor (M S2) source electrode and the 2nd NMOS bias current transistor (M B2) drain electrode link to each other, and be connected to the second differential signal output (V of radio frequency integrated belt bandpass filter together Out2); The 2nd NMOS bias current transistor (M B2) grid meet the first bias voltage (V q), the 2nd NMOS bias current transistor (M B2) source ground.
10. the radio frequency integrated belt bandpass filter with impedance matching according to claim 3 is characterized in that, in said active negative resistance compensating circuit (107), and the first nmos pass transistor (M Q1) the grid and the second nmos pass transistor (M Q2) drain electrode link to each other the second nmos pass transistor (M Q2) the grid and the first nmos pass transistor (M Q1) drain electrode link to each other the first nmos pass transistor (M Q1) and the second nmos pass transistor (M Q2) source electrode link to each other, and be connected to the 2nd NMOS tail current transistor (M q) drain electrode.
CN201010232826.2A 2010-07-21 2010-07-21 Radio-frequency integrated band-pass filter with impedance match Active CN102340288B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201010232826.2A CN102340288B (en) 2010-07-21 2010-07-21 Radio-frequency integrated band-pass filter with impedance match

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010232826.2A CN102340288B (en) 2010-07-21 2010-07-21 Radio-frequency integrated band-pass filter with impedance match

Publications (2)

Publication Number Publication Date
CN102340288A true CN102340288A (en) 2012-02-01
CN102340288B CN102340288B (en) 2013-12-25

Family

ID=45515831

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010232826.2A Active CN102340288B (en) 2010-07-21 2010-07-21 Radio-frequency integrated band-pass filter with impedance match

Country Status (1)

Country Link
CN (1) CN102340288B (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681635A (en) * 2012-09-12 2014-03-26 飞思卡尔半导体公司 Semiconductor devices with impedance matching-circuit, and method of manufacture thereof
CN103731120A (en) * 2012-10-12 2014-04-16 英飞凌科技股份有限公司 Impedance matching network with improved quality factor and method for matching an impedance
CN104170267A (en) * 2012-09-25 2014-11-26 Dsp集团有限公司 CMOS based TX/RX switch
CN104579307A (en) * 2014-11-28 2015-04-29 中国电子科技集团公司第五十四研究所 Q value boosting circuit for radio-frequency passive inductor
US9312820B2 (en) 2012-09-23 2016-04-12 Dsp Group Ltd. CMOS based TX/RX switch
WO2016127823A1 (en) * 2015-02-10 2016-08-18 东南大学 Radio frequency high-q value band-pass filter
US9692363B2 (en) 2015-10-21 2017-06-27 Nxp Usa, Inc. RF power transistors with video bandwidth circuits, and methods of manufacture thereof
US9762185B2 (en) 2010-04-22 2017-09-12 Nxp Usa, Inc. RF power transistor circuits
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
CN110995239A (en) * 2019-10-25 2020-04-10 芯创智（北京）微电子有限公司 Driving circuit with impedance matching and working method
CN111342805A (en) * 2018-12-18 2020-06-26 天津大学 Filter unit with anti-curve adjustment module, filter and electronic equipment
CN113161348A (en) * 2020-01-22 2021-07-23 深圳市汇芯通信技术有限公司 Integrated chip, manufacturing method thereof and integrated circuit
CN113794454A (en) * 2021-08-11 2021-12-14 西安电子科技大学 Single-ended input reflection amplifier circuit based on cross-coupling negative resistance circuit
CN114362691A (en) * 2022-03-17 2022-04-15 壹甲子(成都)通讯有限公司 AC small signal driving information pick-up circuit
WO2023065863A1 (en) * 2021-10-18 2023-04-27 Oppo广东移动通信有限公司 Receiving device, radio frequency system and communication device
US20240039570A1 (en) * 2019-01-08 2024-02-01 Psemi Corporation Configurable Wideband Split LNA
WO2024020768A1 (en) * 2022-07-26 2024-02-01 京东方科技集团股份有限公司 Filter circuit, filter and manufacturing method therefor, and electronic device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107370462A (en) * 2016-05-11 2017-11-21 中芯国际集成电路制造(上海)有限公司 Low-noise amplifier and rf terminal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133907A (en) * 2001-10-24 2003-05-09 Rohm Co Ltd Equivalent inductor circuit
CN101162912A (en) * 2007-11-19 2008-04-16 上海士康射频技术有限公司 Single chip radio frequency transceiver

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133907A (en) * 2001-10-24 2003-05-09 Rohm Co Ltd Equivalent inductor circuit
CN101162912A (en) * 2007-11-19 2008-04-16 上海士康射频技术有限公司 Single chip radio frequency transceiver

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
高志强: "射频有源CMOS带通滤波器的分析与实现", 《中国博士学位论文全文数据库》 *

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9762185B2 (en) 2010-04-22 2017-09-12 Nxp Usa, Inc. RF power transistor circuits
CN103681635A (en) * 2012-09-12 2014-03-26 飞思卡尔半导体公司 Semiconductor devices with impedance matching-circuit, and method of manufacture thereof
CN103681635B (en) * 2012-09-12 2017-12-08 恩智浦美国有限公司 Semiconductor device and its manufacture method with impedance matching circuit
US9748185B2 (en) 2012-09-12 2017-08-29 Nxp Usa, Inc. Semiconductor devices with impedance matching-circuits
US9312820B2 (en) 2012-09-23 2016-04-12 Dsp Group Ltd. CMOS based TX/RX switch
CN104170267B (en) * 2012-09-25 2017-02-22 Dsp集团有限公司 CMOS based TX/RX switch
CN104170267B9 (en) * 2012-09-25 2017-04-05 Dsp集团有限公司 CMOS-based TX/RX switch
CN104170267A (en) * 2012-09-25 2014-11-26 Dsp集团有限公司 CMOS based TX/RX switch
CN103731120A (en) * 2012-10-12 2014-04-16 英飞凌科技股份有限公司 Impedance matching network with improved quality factor and method for matching an impedance
CN104579307A (en) * 2014-11-28 2015-04-29 中国电子科技集团公司第五十四研究所 Q value boosting circuit for radio-frequency passive inductor
CN104579307B (en) * 2014-11-28 2017-09-26 中国电子科技集团公司第五十四研究所 A kind of Q values lifting circuit of RF passive inductance
WO2016127823A1 (en) * 2015-02-10 2016-08-18 东南大学 Radio frequency high-q value band-pass filter
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
US9692363B2 (en) 2015-10-21 2017-06-27 Nxp Usa, Inc. RF power transistors with video bandwidth circuits, and methods of manufacture thereof
CN111342805B (en) * 2018-12-18 2023-12-15 天津大学 Filter unit with impedance curve adjustment module, filter and electronic equipment
CN111342805A (en) * 2018-12-18 2020-06-26 天津大学 Filter unit with anti-curve adjustment module, filter and electronic equipment
US20240039570A1 (en) * 2019-01-08 2024-02-01 Psemi Corporation Configurable Wideband Split LNA
CN110995239A (en) * 2019-10-25 2020-04-10 芯创智（北京）微电子有限公司 Driving circuit with impedance matching and working method
CN113161348A (en) * 2020-01-22 2021-07-23 深圳市汇芯通信技术有限公司 Integrated chip, manufacturing method thereof and integrated circuit
CN113161348B (en) * 2020-01-22 2023-03-21 深圳市汇芯通信技术有限公司 Integrated chip, manufacturing method thereof and integrated circuit
CN113794454B (en) * 2021-08-11 2023-07-04 西安电子科技大学 Single-ended input reflection amplifier circuit based on cross-coupling negative resistance circuit
CN113794454A (en) * 2021-08-11 2021-12-14 西安电子科技大学 Single-ended input reflection amplifier circuit based on cross-coupling negative resistance circuit
WO2023065863A1 (en) * 2021-10-18 2023-04-27 Oppo广东移动通信有限公司 Receiving device, radio frequency system and communication device
CN114362691B (en) * 2022-03-17 2022-05-24 壹甲子(成都)通讯有限公司 AC small signal driving information pick-up circuit
CN114362691A (en) * 2022-03-17 2022-04-15 壹甲子(成都)通讯有限公司 AC small signal driving information pick-up circuit
WO2024020768A1 (en) * 2022-07-26 2024-02-01 京东方科技集团股份有限公司 Filter circuit, filter and manufacturing method therefor, and electronic device

Also Published As

Publication number Publication date
CN102340288B (en) 2013-12-25

Similar Documents

Publication Publication Date Title
CN102340288B (en) Radio-frequency integrated band-pass filter with impedance match
CN102340294B (en) Fourth-order active LC radio frequency band pass filter
EP4167481A1 (en) Power amplifier output matching circuit, radio frequency front-end module, and wireless device
CN103296988B (en) Adjustable impedance matching network
US7768350B2 (en) Output gain stage for a power amplifier
CN104300992B (en) Support that the biography of multiband operation connects device and method
CN101484956B (en) Programmable inductor
CN105141263A (en) Multi-band low-noise amplification method and multi-band low-noise amplifier
CN102185578A (en) Electronic circuit and electronic device
KR102557851B1 (en) Transmit and Receive Switches and Broadband Power Amplifier Matching Networks for Multi-Band Millimeter Wave 5G Communications
CN110719074B (en) Tunable broadband low noise amplifier
US20140306780A1 (en) Duplexers
CN102868377A (en) Total 3G (Third Generation Telecommunication) CMOS (Complementary Metal-Oxide-Semiconductor Transistor) differential low-noise amplifier based on controllable active inductor
CN102130656B (en) Novel integrated circuit structure of full-integrated dual frequency band low-noise amplifier
CN103633940A (en) Active inductance type voltage-controlled oscillator
CN102904527A (en) Voltage conversion frequency LC (linearity compensation) oscillator
CN102938637A (en) Ultra wide band low noise amplifier circuit
CN102655404B (en) Differential radio frequency switch circuit
CN202772848U (en) Fully third generation telecommunication (3G) complementary metal oxide semiconductor (CMOS) difference low noise amplifier based on controllable active inductor
CN205017288U (en) Single pole single throw RF switch and RF switch is thrown to single -pole double throw RF switch and hilted broadsword that constitute more thereof
CN207853847U (en) A kind of low phase noise broad tuning bandwidth voltage-controlled oscillator circuit
CN102142811B (en) Low-noise CMOS (complementary metal oxide semiconductor) voltage-controlled oscillation circuit based on low-voltage difference voltage regulator
CN101951232A (en) Radio-frequency (RF) power amplifier
US20230022015A1 (en) Compact Antenna Impedance Tuner
CN108574471B (en) Fully integrated harmonic filter for radio frequency power amplifying circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20170505

Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. three

Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd.

Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3

Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20170608

Address after: 100029 Beijing Chaoyang District city 3 National Road No. 2 Building 5 room 5038

Patentee after: In health coheart Technology Co.,Ltd.

Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. three

Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20180806

Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing

Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences

Address before: 100029 Beijing Chaoyang District 2 National Garden Road 3 5 story 5038 rooms.

Patentee before: In health coheart Technology Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20201217

Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province

Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd.

Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3

Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220427

Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong

Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd.

Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province

Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd.