CN102338940A - Electric absorption modulator based on ring cavity - Google Patents
Electric absorption modulator based on ring cavity Download PDFInfo
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- CN102338940A CN102338940A CN201110256183XA CN201110256183A CN102338940A CN 102338940 A CN102338940 A CN 102338940A CN 201110256183X A CN201110256183X A CN 201110256183XA CN 201110256183 A CN201110256183 A CN 201110256183A CN 102338940 A CN102338940 A CN 102338940A
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Abstract
The invention discloses an electric absorption modulator based on a ring cavity, relating to the technical field of photoelectric integrated devices. The electric absorption modulator comprises an electric absorption waveguide and a linear input/output waveguide which are coupled mutually, wherein the electric absorption waveguide is in a ring cavity structure. The invention has the advantages that: (1) the coupling action between the linear input/output waveguide and the electric absorption waveguide based on the ring cavity is utilized, linear transmission light generates interference with coupled output light propagating around the ring cavity different times and the ring cavity has a resonance characteristic to ensure that the transmission light is more sensitive to loss in the cavity than a common electric absorption modulator, thus, the modulation efficiency is increased; and (2) after the electric absorption waveguide in the electric absorption modulator is made into the ring cavity structure, the size of a device can be reduced by one order of magnitude, the capacitance parameter of an integrated circuit is lowered, and the electric absorption modulator has high-frequency modulation potential.
Description
Technical field
The present invention relates to the integrated opto-electronics device technical field, particularly a kind of electroabsorption modulator based on ring cavity.
Background technology
Modulator is one of core devices in digital optical system, Radio of Fiber Technology (RoF) and the on-chip interconnect.These application all require modulator to have characteristics such as high modulate efficiency, low driving voltage, low-power consumption.Along with the development of photoelectron integrated level, require device volume littler simultaneously, more easy of integration.In the digital communi-cations link, the low driving voltage modulator means low driving voltage, low driving circuit energy consumption, and be easy to the CMOS integrated circuit compatible.In the analog link, the modulation efficiency of modulator is the key parameter of determined link performance, and the low driving voltage modulator can bring advantages such as high link gain, low high s/n ratio, great dynamic range.Therefore, the low driving voltage modulator is the focus of research always.
The external modulator structure that is used to make mainly is divided into two types: interfere type and electric absorption type are representative with the Mach-Zehdner modulator based on the mqw material electrooptical effect with utilizing MQW (MQW) electric absorption (EA) modulator of quantum limit Stark effect respectively.Though, warble adjustable characteristic insensitive to operation wavelength that performance of interferometric modulators has exists and makes shortcomings such as difficult, that device size is bigger.And electroabsorption modulator has been widely used because have little, controlled, the advantage such as manufacture craft is simple of warbling of device size, but owing to be subject to factors such as inserting loss and bandwidth, the reduction driving voltage has difficulties.
At present, the EA modulator that is based on MQW that optical fiber communication is the most frequently used, its principle of work is quantum limit Stark effect (QCSE).Because the restriction of quantum well, the absorption edge of quantum-well materials has very precipitous exciton absorption peak.When the extra electric field that applies perpendicular to the quantum well direction, quantum well can be with run-off the straight, and the exciton absorption peak moves to long wavelength's direction, and absorption edge slows down QCSE effect that Here it is simultaneously.If will import the long wave strong point that light wavelength is selected in EA modulator quantum-well materials exciton absorption peak, then outside not adding under the condition of bias voltage, the EA modulator absorbs little, and Output optical power is strong.Under the applying bias effect, the red shift of EA modulator absorption peak, to the absorption increase of light, Output optical power dies down.In order to reach certain extinction ratio, device length is generally greater than 100 μ m.Can reduce driving voltage through increasing absorption length, but can increase the reduction of inserting loss and modulation band-width simultaneously.
In the last few years, advantage received and paying attention to widely the mode of resonance modulator because its highly sensitive and volume be little etc., and the ring cavity modulator is in the resonator cavity modulator comparatively typical one type.The structure of ring cavity modulator is as shown in Figure 1, and wherein ring cavity structure and the waveguide of input and output forthright are coupled with certain coupling efficiency.During work, input light is by forthright waveguide input, and forthright sees through light interferes with the coupling output light generation of propagating different number of times around the chamber, causes the output light of forthright waveguide to change with light path in the chamber and loss.At present, ring cavity being applied to modulator all is to utilize the refractive index that changes in the chamber to change the principle through light.Change of refractive generally realizes through plasma effect or electrooptical effect.When wavelength was in the resonance place, transmission coefficient changed rapidly with the change of propagation coefficient, thereby can reach the purpose that reduces driving voltage.But the monolithic integrated opto-electronic device that also ring cavity is not combined with the EA modulator at present.Compare with traditional forthright EA modulator, ring cavity is applied to the EA modulator has the advantage that reduces equivalent half-wave voltage and reduce device volume.
Summary of the invention
The technical matters that (one) will solve
The technical matters that the present invention will solve is: how to improve the modulation efficiency of electroabsorption modulator, and reduce the size and the lumped circuit capacitance parameter of electroabsorption modulator.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of electroabsorption modulator based on ring cavity, said electroabsorption modulator comprises: electric absorption waveguide that intercouples and forthright input and output waveguide, said electric absorption waveguide is the ring cavity structure.
Preferably; The epitaxial structure of said electric absorption waveguide comprise epitaxial growth successively the under-clad layer on the N type substrate, lower waveguide layer, multiple quantum well active layer, on ducting layer, top covering and ohmic contact layer; Said ohmic contact layer connects the P electrode, and said N type substrate connects the N electrode.
Preferably, said forthright input and output waveguide is identical with the epitaxial structure of said electric absorption waveguide.
Preferably, said little ring electric absorption partly increases the thickness of said multiple quantum well active layer through the mode of selecting region growing, make the more said forthright input and output of wavelength of fluorescence waveguide red shift, to reduce the loss of forthright input and output waveguide.
Preferably, the span of the light intensity coupling coefficient between said electric absorption waveguide and the forthright input and output waveguide is 0.01～0.8.
Preferably, said ring cavity structure is a circular rings.
Preferably, one section of said circular rings is optical amplifying section, and at said optical amplifying section two ends electricity isolated region is set.
Preferably, said ring cavity structure is made up of straight wave guide section and fan-shaped waveguide section.
Preferably, ridge waveguide structure is all adopted in said electric absorption waveguide and forthright input and output waveguide.
(3) beneficial effect
Advantage of the present invention is: 1) utilized forthright input and output waveguide and based on the coupling of the electric absorption waveguide of ring cavity; Because forthright sees through light and produces interference with the coupling output light of propagating different number of times around the chamber; Because the resonance characteristic of ring cavity; Make through light general electroabsorption modulator sensitivity is compared in the loss in the chamber, thereby improve modulation efficiency; 2) the ring cavity structure is made in the electric absorption waveguide in the electroabsorption modulator after, device size can reduce by an one magnitude, has reduced the lumped circuit capacitance parameter, has the potential of high frequency modulated.
Description of drawings
Fig. 1 is the epitaxial structure synoptic diagram based on electric absorption waveguide in the electroabsorption modulator of ring cavity according to one embodiment of the present invention;
Fig. 2 is the structural representation based on the electroabsorption modulator of ring cavity according to first kind of embodiment of the present invention;
Fig. 3 is the structural representation based on the electroabsorption modulator of ring cavity according to second kind of embodiment of the present invention;
Fig. 4 is the structural representation based on the electroabsorption modulator of ring cavity according to the third embodiment of the present invention.
Wherein, 1:N electrode; 2:N type substrate; 3: under-clad layer; 4: lower waveguide layer; 5: multiple quantum well active layer; 6: go up ducting layer; 7: top covering; 8: ohmic contact layer; The 9:P electrode; 10: forthright input and output waveguide; 11: the electric absorption waveguide; 12: optical amplifying section; 13: electricity isolated region; 14: the straight wave guide section; 15: the fan-shaped waveguide section.
Embodiment
Below in conjunction with accompanying drawing and embodiment, specific embodiments of the invention describes in further detail.Following examples are used to explain the present invention, but are not used for limiting scope of the present invention.
Electroabsorption modulator based on ring cavity of the present invention comprises: the electric absorption waveguide 11 and the forthright input and output waveguide 10 that intercouple, said electric absorption waveguide 11 is the ring cavity structure.
With reference to Fig. 1; The epitaxial structure of the electric absorption waveguide in the said electroabsorption modulator comprise epitaxial growth successively the under-clad layer 3 on the N type substrate 2, lower waveguide layer 4, multiple quantum well active layer 5, on ducting layer 6, top covering 7 and ohmic contact layer 8; Said ohmic contact layer 8 connects P electrode 9; Said N type substrate 2 connects N electrode 1; In this embodiment, the growing method of said electric absorption waveguide is: at first adopt gas phase epitaxy of metal organic compound (MOCVD) N type InP under-clad layer 3 (thickness 160nm, the doping contents about 1 * 10 of on the N of InP type substrate 2, growing
18Cm
-3), non-doping lattice matched InGaAsP lower waveguide layer 4 (thickness 80nm, light wavelength of fluorescence 1150nm).The multiple quantum well active layer 5 of growing then, quantum well structure is: 10 pairs of quantum wells: the wide 7nm of trap, 0.4% compressive strain; Light wavelength of fluorescence 1510nm; Build wide 9nm, lattice matched materials, light wavelength of fluorescence 1150nm; The non-doping type lattice matched of regrowth InGaAsP goes up ducting layer 6 (thickness 100nm, light wavelength of fluorescence 1150nm).Continuation is carried out extension with MOCVD, and (thickness 1700nm, doping content is from 3 * 10 for the InP top covering 7 of growing P-type successively
17Cm
-3Be gradient to is 1 * 10
18Cm
-3) and InGaAs ohmic contact layer 8 (thickness 100nm, the doping content about 1 * 10 of P type
19Cm
-3).
The span of the light intensity coupling coefficient between said electric absorption waveguide 11 and the forthright input and output waveguide 10 is 0.01～0.8.
Embodiment 1
With reference to Fig. 2; Said electric absorption waveguide 11 in the electroabsorption modulator of present embodiment is an annular; Epitaxial structure and the growing method identical with electric absorption waveguide 11 are adopted in said forthright input and output waveguide 10; Comprise epitaxial growth successively the under-clad layer 3 on the N type substrate 2, lower waveguide layer 4, multiple quantum well active layer 5, on ducting layer 6, top covering 7 and ohmic contact layer 8, the operation wavelength of said electroabsorption modulator is 1550nm, the radius of said electric absorption waveguide 11 is 6.2 μ m; Said electric absorption waveguide 11 is all adopted high ridge waveguide structure with forthright input and output waveguide 10; Ridge is wide to be 2 μ m, dark about 4 μ m, and the minimum interval is 0.1 μ m between said electric absorption waveguide 11 and the forthright input and output waveguide 10.Method through plasma-reinforced chemical vapor deposition (PECVD) is used SiO in the both sides of said electric absorption waveguide 11 and forthright input and output waveguide 10 respectively
2Insulation course covers or fills and leads up, and erodes the SiO on said electric absorption waveguide 11 crestal culminations then
2, make P electrode 9 and N electrode 1 with the method for sputter.
The characteristic parameter of present embodiment is:
Light field coupling coefficient 0.6, coupling loss is about 5%, and ring cavity inserts loss 5%, is operated in the resonance place, realizes 10dB extinction ratio driving voltage 0.17V, and the about 0.2V of equivalent half-wave voltage is about 1/5 of forthright equal length EAM half-wave voltage.
With reference to Fig. 3, the structure of the electroabsorption modulator of present embodiment and embodiment 1 is basic identical, and difference is; One section of said circular rings is light amplification (SOA) section 12, and at said optical amplifying section two ends electricity isolated region 13 is set, and the radius of said electric absorption waveguide 11 is 7 μ m; Girth is 44 μ m; Wherein, the length of SOA section 12 is 5 μ m, forms electricity isolated region 13 through protonation.At SOA section 12 injection currents, to reduce to encircle the interior loss of inserting.
The characteristic parameter of present embodiment is:
Light field coupling coefficient 0.6, coupling loss is about 5%, and ring cavity inserts loss 0.5%, is operated in the resonance place, realizes 10dB extinction ratio driving voltage 0.15V, and equivalent half-wave voltage is about 0.16V, is about 1/6 of forthright equal length EAM half-wave voltage.
With reference to Fig. 4; The structure of the electroabsorption modulator of present embodiment and embodiment 1 is basic identical, and difference is that said ring cavity structure is made up of straight wave guide section 14 and fan-shaped waveguide section 15; In the present embodiment; Preferred said fan-shaped waveguide section 15 is a semi-round ring shape, and wherein the length of straight wave guide section 14 is 2.5 μ m, and the radius of fan-shaped waveguide section 15 is 2.5 μ m.
The characteristic parameter of present embodiment is:
Light field coupling coefficient 0.6, coupling loss is about 3%, and ring cavity inserts loss 3%, is operated in the resonance place, realizes 10dB extinction ratio driving voltage 0.16V, the about 0.18V of equivalent half-wave voltage.
The structure of the electroabsorption modulator of present embodiment and embodiment 1 is basic identical; Difference is; Said forthright input and output waveguide is adopted different epitaxial growth methods with said ring cavity structure; Said forthright input and output waveguide is adopted and is selected region growing (SAG), is with the difference of embodiment 1 growth pattern: the SiO that at first adopts gas phase epitaxy of metal organic compound (MOCVD) about 0.2um of grow thick on the N of InP type substrate 2
2Then grow successively N type InP under-clad layer 3, non-doping lattice matched InGaAsP lower waveguide layer 4.The multiple quantum well active layer 5 of growing then, quantum well structure is: 10 pairs of quantum wells, lattice matched materials, the non-doping type lattice matched of regrowth InGaAsP goes up ducting layer 6.Continuation is carried out extension with MOCVD, successively the InGaAs ohmic contact layer 8 of the InP top covering 7 of growing P-type and P type.Wherein the multiple quantum well layer wavelength of fluorescence of ring cavity structure is 1510nm, and than forthright input and output wave guide fluorescence wavelength 1480nm red shift 30nm, input light operation wavelength is 1550nm.Select region growing because said forthright input and output waveguide is adopted, therefore, the wavelength of fluorescence of said forthright input and output waveguide departs from operation wavelength big than embodiment 1, so the loss of forthright input and output waveguide reduces.
The characteristic parameter of present embodiment is:
Light field coupling coefficient 0.6, coupling loss is about 5%, and ring cavity inserts loss 5%, is operated in the resonance place, realizes 10dB extinction ratio driving voltage 0.17V, and the about 0.2V of equivalent half-wave voltage is about 1/5 of forthright equal length EAM half-wave voltage.
Principle of work of the present invention is: light is from the end input of said forthright input and output waveguide; When in said forthright input and output waveguide, transmitting; A part directly is transferred to output terminal; Part light is owing to evanescent field coupling between waveguide is coupled in the electric absorption waveguide; Whenever around all there being the part optically-coupled to return said forthright input and output waveguide output in a week, the light that is coupled to said forthright input and output waveguide around N after week reaches around the inferior coupling output of 1-(N-1) interference of light with direct seeing through light in said electric absorption waveguide, and the amplitude of output light can be represented E
OutFor:
Wherein, β is a waveguide basic mode propagation constant, and L is that the chamber of said electric absorption waveguide is long, and α is that light falls coefficient (comprising the various loss factors except that coupling) around declining of said electric absorption waveguide one all field intensity; T is the transmission coefficient of said forthright input and output waveguide, and κ is coupling crossroad coupling coefficient.Can find out by (1) formula, when critical coupling takes place when, i.e. β L=2n π (n is an integer), during t=α, the output light amplitude is 0.Transmission coefficient is:
Can find out near the resonance place (β L=2n π) α
2At 1-t
2When changing in the scope, output coefficient changes compares α
2Change greatly,, change absorbed coefficient and then change ring cavity internal loss, make through light to change, and change the loss α that causes than the electric absorption of equal length forthright therefore through changing the electric absorption reversed bias voltage
2Greatly, therefore the rate of change that more traditional electroabsorption modulator is bigger be can realize, thereby high modulate efficiency, low half-wave voltage realized.
Input optical wavelength satisfies, the chamber length of said electric absorption waveguide divided by the merchant of optical wavelength in the scope of a natural number+(0.05～0.05).
Single-revolution light intensity absorptivity through the control electric signal is regulated said electric absorption waveguide makes in its 0%～110% scope that reaches the light intensity coupling coefficient between said electric absorption waveguide and the forthright input and output waveguide.
Above embodiment only is used to explain the present invention; And be not limitation of the present invention; The those of ordinary skill in relevant technologies field under the situation that does not break away from the spirit and scope of the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (9)
1. the electroabsorption modulator based on ring cavity is characterized in that, said electroabsorption modulator comprises: electric absorption waveguide that intercouples and forthright input and output waveguide, said electric absorption waveguide is the ring cavity structure.
2. electroabsorption modulator as claimed in claim 1; It is characterized in that; The epitaxial structure of said electric absorption waveguide comprise epitaxial growth successively the under-clad layer on the N type substrate, lower waveguide layer, multiple quantum well active layer, on ducting layer, top covering and ohmic contact layer; Said ohmic contact layer connects the P electrode, and said N type substrate connects the N electrode.
3. according to claim 1 or claim 2 electroabsorption modulator is characterized in that said forthright input and output waveguide is identical with the epitaxial structure of said electric absorption waveguide.
4. electroabsorption modulator as claimed in claim 3; It is characterized in that; Said little ring electric absorption partly increases the thickness of said multiple quantum well active layer through the mode of selecting region growing; Make the more said forthright input and output of wavelength of fluorescence waveguide red shift, to reduce the loss of forthright input and output waveguide.
5. according to claim 1 or claim 2 electroabsorption modulator is characterized in that the span of the light intensity coupling coefficient between said electric absorption waveguide and the forthright input and output waveguide is 0.01～0.8.
6. according to claim 1 or claim 2 electroabsorption modulator is characterized in that said ring cavity structure is a circular rings.
7. electroabsorption modulator as claimed in claim 6 is characterized in that, one section of said circular rings is optical amplifying section, and at said optical amplifying section two ends electricity isolated region is set.
8. according to claim 1 or claim 2 electroabsorption modulator is characterized in that said ring cavity structure is made up of straight wave guide section and fan-shaped waveguide section.
9. according to claim 1 or claim 2 electroabsorption modulator is characterized in that ridge waveguide structure is all adopted in said electric absorption waveguide and forthright input and output waveguide.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105424220A (en) * | 2016-01-25 | 2016-03-23 | 哈尔滨工业大学 | Temperature sensor based on surface plasmon |
| CN104169785B (en) * | 2012-03-29 | 2017-02-22 | 富士通株式会社 | Optical semiconductor element and control method for optical semiconductor element |
| CN108563041A (en) * | 2018-04-24 | 2018-09-21 | 清华大学 | A kind of light emitting devices generating photon trajectory angular momentum signal |
| CN110346868A (en) * | 2018-04-06 | 2019-10-18 | 洛克利光子有限公司 | Photoelectron device and its array |
| CN114355507A (en) * | 2022-01-25 | 2022-04-15 | 吉林大学 | Micro-ring resonator based on inverted ridge type silicon dioxide/polymer mixed waveguide and preparation method thereof |
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| US20060078014A1 (en) * | 2004-10-08 | 2006-04-13 | Agilent Technologies, Inc. | Integrated modulator/laser assembly and a method of producing same |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114355507A (en) * | 2022-01-25 | 2022-04-15 | 吉林大学 | Micro-ring resonator based on inverted ridge type silicon dioxide/polymer mixed waveguide and preparation method thereof |
| CN114355507B (en) * | 2022-01-25 | 2023-12-05 | 吉林大学 | Micro-ring resonator based on inverted ridge type silicon dioxide/polymer mixed waveguide and preparation method thereof |
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