CN106532434B - The method of lamination selective area growth production multi-wavelength integreted phontonics transmitting chip - Google Patents
The method of lamination selective area growth production multi-wavelength integreted phontonics transmitting chip Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Abstract
A kind of method of lamination selective area growth production multi-wavelength integreted phontonics transmitting chip, comprising: make constituency medium mask strip pair on substrate；And successively grown InP buffer layer, it is lower respectively limiting layer, lower layer's multiple quantum well layer, etch stop layer, upper layer multiple quantum well layer and it is upper respectively limiting layer；Remove and distinguishes limiting layer and upper layer multiple quantum well layer on part；Remove part etch stop layer and lower layer's multiple quantum well layer；Docking growth passive wave guide sandwich layer；Distributed feedback grating is made on upper limiting layer respectively, and successively epitaxial growth grating coating, doping cap rock and heavy doping contact layer, and etch away sections heavy doping contact layer；Etch active waveguide, passive wave guide and deep waveguiding structure；And grow insulating medium layer；Open electrode contact window；Prepare metal P electrode；And form isolating trenches；Another metal N electrode is made at the back side of substrate, completes chip preparation.
Description
Technical field
The present invention relates to field of optoelectronic devices, in particular to a kind of lamination selective area growth production multi-wavelength integreted phontonics hair
The method of core shooting piece.
Background technique
The capacity of optical fiber telecommunications system rapidly increases with the exponentially form that quicklys increase of the mankind to information capacity requirements,
To which highly reliable, inexpensive and low-loss integreted phontonics (photonics integrated circuits) technology be put on
Schedule.Single-chip integration multi-wavelength integreted phontonics transmitting chip is the important means for realizing integreted phontonics, it includes multiple functions
Device: photodetector (PD), distributed feedback laser (DFB), electroabsorption modulator (EAM), semiconductor optical amplifier
(SOA), passive wave guide and passive multiplex device such as multi-mode interference coupler (MMI), array waveguide grating (AWG) etc., device system
Standby process is complicated, requires production equipment and process conditions very high.Current main integreted phontonics technology has: selection region is raw
Long technology (SAG) (C.Zhang, H.Zhu, S.Liang, Opt.Laser Technol, 2014), quantum well mixing (QWI)
(L.Hou, M.Haji, R.Dylewicz, Photonica Technol.Lett, 2011), Butt-coupling growth (BJG)
(L.Han, S.Liang, H.Wang, Opt.Express, vol.22, no.24, p.30368, Dec.2014), offset Quantum Well
(OQW) (Q.Kan, F.Zhou, L.Wang, B.Wang.Chinese Opt.Lett., 2005；C.Watson,
V.Tolstikhin, K.Pimenov, in IEEE Photonic Society 24th Annual Meeting, 2011) etc..
Wherein SAG technology can the primary outer quantum-well materials that extend different band gap wavelength and interface is excessively uniform, still, selection region
It growing, cannot be separately optimized simultaneously with the material of non-selective region, the growth parameter(s) of each device material is compromise product, than
It is harsher.QWI technology is a kind of rear technique, and multiple etching regrowth is cumbersome needed for avoiding other technologies, but is easy
It damages quantum-well materials quality and increases additional loss.BJG technology can separately design and optimize to a part of devices structure,
But need to increase extension number, and be easy to introduce defect and additional light loss in butt joint interface.OQW technology is by one
The method that secondary extension obtains two kinds of materials, an extension include passive sandwich layer waveguide and multi-quantum well active region two parts, later
Etch away the Quantum Well of passive device part.The program is suitble to the integrated of active/passive device, but needs special ridge waveguide
Structure is designed to reduce transition coupling loss.Above-mentioned technology complies with one's wishes not to the utmost, and many years ago, one of declarer of the present invention proposes choosing
Select double active area lamination (SAG-DSAL) technologies of area epitaxy (HongLiang Zhu and Wei Wang, United States Patent (USP) US7,
476,558B2), the program elects epitaxial growth area in modulator segment, and one time extension grows modulator and laser simultaneously
Then lamination Quantum well active district structure erodes upper layer LD_MQW layers of modulator region.It can be obtained using such scheme
Simple process, the high Electroabsorption Modulated Laser chip of Low threshold coupling efficiency.The present patent application is proposed based on this patent
A kind of method of lamination selective area growth production multi-wavelength integreted phontonics transmitting chip, with it has been reported that multi-wavelength integreted phontonics
Transmitting chip technology is compared, and such method and process is simple, and the parameter of laser and each channel electroabsorption modulator is same primary outer
The different time sections prolonged are separately optimized, to improve the yield rate and characteristic index of integreted phontonics transmitting chip.
As described above, be at present the good multi-wavelength integreted phontonics transmitting chip of processability, most of needs complexity
Technique, low so as to cause device yield, cost of manufacture is high.In addition, Electroabsorption Modulated Laser (EML) chip integrated at present
In, the EAM material property of each channel is consistent, and the DFB excitation wavelength corresponding to different channels is different, each channel EAM's
PL peak wavelength and the excitation wavelength of DFB difference are different, different so as to cause the EAM extinction ratio of different channels, and then influence it
Dynamic characteristic.
Summary of the invention
Production method disclosed by the invention can simplify the same of chip fabrication technique relative to conventional material integrated technology
When DFB and EAM is separately optimized, to promote its performance respectively.It, can be with further, since the particularity of lamination selective area growth method
The material property for modulating the EAM of each channel respectively thereby may be ensured that the extinction ratio of all channels is consistent, greatly optimize core
The performance of piece.
To reach above-mentioned technical purpose, the present invention provides a kind of lamination selective area growth production multi-wavelength integreted phontonics transmitting core
The method of piece, the multi-wavelength integreted phontonics transmitting chip include the active device that detector, laser, modulator and amplifier are formed
Part and passive wave guide, include the following steps:
Step 1: the detector region in InP substrate makes constituency medium mask strip pair；
Step 2: production have constituency medium mask strip pair InP substrate on, around each constituency medium mask strip pair according to
Secondary growth InP buffer layer, lower limiting layer respectively, lower layer's multiple quantum well layer, etch stop layer, upper layer multiple quantum well layer and upper point
Other limiting layer；
Step 3: corrosion removes upper limiting layer and the upper layer multiple quantum well layer respectively of modulator region and passive waveguide regions；
Step 4: corrosion removes the etch stop layer and lower layer's multiple quantum well layer of passive waveguide regions；
Step 5: docking growth passive wave guide sandwich layer；
Step 6: making distributed feedback grating on the upper limiting layer respectively of laser region, form print；
Step 7: successively epitaxial growth grating coating, doping cap rock and heavy doping contact layer on print, and etch
Fall the heavy doping contact layer of passive device region；
Step 8: etching active waveguide in active device area, etch passive wave guide in passive device region；
Step 9: in the electroabsorption modulator region etch depth waveguiding structure of active device；
Step 10: growing insulating medium layer on the surface for being etched with deep waveguiding structure print；
Step 11: each active device is outputed into electrode contact window；
Step 12: metal P electrode is prepared on each active device；
Step 13: the heavy doping contact layer between active device being etched away, isolating trenches are formed；
Step 14: InP substrate is thinned, makes another metal N electrode at the back side of thinned InP substrate, completes chip system
It is standby.
The above method proposed by the present invention is made multi-wavelength integreted phontonics transmitting core of the method for lamination selective area growth
Piece, it is only necessary to which the opto-electronic device that DFB band gap wavelength different from two kinds of EAM can be realized in extension twice integrates, and can distinguish
Optimize the material of DFB and the region EAM.On this basis, adjust the constituency medium mask strip pair in the region EAM item is wide and spacing,
The PL peak wavelength difference that each channel laser excitation wavelength and EAM may be implemented remains a steady state value, to realize each letter
Road extinction ratio is consistent, and can make short wavelength's multiple quantum well layer of lower layer's electroabsorption modulator in electroabsorption modulator region
It is consistent on long wavelength's multiple quantum wells layer height of the upper layer laser of laser region, to reduce coupling loss.This
The method of kind lamination selective area growth can improve the performance of chip while simplifying the manufacture craft of photon integrated chip.
Detailed description of the invention
To further illustrate the contents of the present invention, the present invention is further retouched below in conjunction with the drawings and specific embodiments
It states, in which:
Fig. 1 is the side of the method production multi-wavelength integreted phontonics transmitting chip provided by the invention using lamination selective area growth
Method flow chart；
Fig. 2 to Figure 11 is the process flow chart that multi-wavelength integreted phontonics chip structure is made according to the embodiment of the present invention；
The structural schematic diagram for the multi-wavelength integreted phontonics transmitting chip that Figure 12 makes according to the embodiment of the present invention；
Figure 13 is the structural representation of the constituency medium mask strip pair of the production multi-wavelength integreted phontonics transmitting chip of embodiment 2
Figure.
Specific embodiment
Embodiment 1
Fig. 1 and Fig. 2 are please referred to Figure 11, the present invention provides a kind of lamination selective area growth production multi-wavelength integreted phontonics transmitting
The method of chip, the multi-wavelength integreted phontonics transmitting chip include detector (PD), laser (DFB), modulator (EAM) and put
The active device and passive wave guide that big device (SOA) is formed, include the following steps:
Step 1: detector region in InP substrate 1 production constituency medium mask strip is to 2, the constituency medium exposure mask
Item is silicon oxide or silicon nitride to the medium in 2, and dielectric thickness is 50-200 nanometers, and the constituency medium mask strip is to 2 with battle array
Column unit spacing is to occur in pairs in the period, and array element pitch period is 100 microns to 300 microns, corresponds to different array lists
The constituency medium mask strip of member is 5 microns to 50 microns gradual changes, the wherein signal of constituency medium mask strip pair to the spacing between 2
Figure is as shown in Figure 2.
Step 2: production have in InP substrate 1 of the constituency medium mask strip to 2, each constituency medium mask strip to 2 around
Successively grown InP buffer layer 3, lower limiting layer 4, lower layer's multiple quantum well layer 5, etch stop layer 6, upper layer multiple quantum well layer 7 respectively
And upper limiting layer 8 respectively；Wherein the lower limiting layer 4 respectively and upper limiting layer 8 respectively are and 1 Lattice Matching of InP substrate
InGaAsP or InAlGaAs body material, photoluminescence peak wavelength is 1.0 microns -1.3 microns, with a thickness of 50 nanometer -200
Nanometer；Wherein the material of lower layer's multiple quantum well layer 5 and upper layer multiple quantum well layer 7 be InGaAsP/InP system or
InAlGaAs/InP system strain compensation multi-quantum pit structure；Number, thickness and the composition parameter of 5 trap of lower layer's multiple quantum well layer are pressed
Impinge upon the requirement growth of electroabsorption modulator material structure in selection region；The number of 7 trap of upper layer multiple quantum well layer, thickness and at
Parameter is divided to grow according to the requirement of laser material structure in non-selective region, lower layer's multiple quantum well layer in selection region
5 electroabsorption modulator material structure wavelength are than the 7 laser material structure wavelength of upper layer multiple quantum well layer in non-selective region
It is 30-60 nanometers short；Material structure wavelength ratio lower layer in selection region of lower layer's multiple quantum well layer 5 in non-selective region is more
5 electroabsorption modulator material structure wavelength of quantum well layer is 60-90 nanometers short；Lower layer's multiple quantum well layer 5 in non-selective region
Material structure wavelength is 90-50 nanometers shorter than multiple quantum well layer 7 laser material structure wavelength in upper layer in non-selective region, it is described
7 laser material of upper layer multiple quantum well layer in non-selective region and the 5 electric absorption tune of lower layer's multiple quantum well layer in selection region
Equipment material processed is in same level, and structural schematic diagram is as shown in Figure 3.
Step 3: corrosion removes upper limiting layer 8 and the upper layer multiple quantum well layer respectively of modulator region and passive waveguide regions
7, as shown in Figure 4.
Step 4: corrosion removes the etch stop layer 6 and lower layer's multiple quantum well layer 5 of passive waveguide regions, as shown in Figure 5.
Step 5: docking growth passive wave guide sandwich layer 9, as shown in fig. 6, wherein the passive wave guide sandwich layer 9 undopes
InP/InGaAsP/InP or InP/InAlGaAs/InP sandwich layer structure, wherein InGaAsP or InAlGaAs is to serve as a contrast with InP
Bottom Lattice Matching, 200 nanometers -400 nanometers of thickness, the body material that photoluminescence peak wavelength is 1.2 microns -1.4 microns, up and down
Asymmetric InP thickness range is 20-300nm.
Step 6: distributed feedback grating 10 is made on the upper limiting layer 8 respectively of laser region, as shown in fig. 7, wherein
The distributed feedback grating 10 is the relief fabric of depth 10-60 nanometers, period 190-300 nanometer, and each of laser array is led to
The period of road grating 10 is determined by its corresponding excitation wavelength；The electricity in the corresponding channel of excitation wavelength of each multichannel laser device is inhaled
The PL peak wavelength for receiving modulator remains a steady state value.
Step 7: successively epitaxial growth grating coating 11, doping cap rock 12 and heavy doping contact layer 13 on print,
As shown in figure 8, and etch away the heavy doping contact layers 13 of passive waveguide regions, wherein the grating coating is thickness 50-300
Nanometer undopes or the type layer of InP opposite with InP substrate is lightly doped, and concentration 1-3 × 10 are lightly doped17/cm3；Adulterating cap rock is
The doping type layer of InP opposite with InP substrate, 1.0-2.0 microns of thickness, doping concentration 0.5-2 × 1018/cm3Gradual change；It is heavily doped
The miscellaneous contact layer InGaAs layer opposite with InP substrate for doping type, 50-200 nanometers of thickness, doping concentration 1.0-5 × 1019/
cm3。
Step 8: active waveguide 14 is etched in active device area, etches passive wave guide 15 in passive device region, wherein
Active waveguide 14 is deep 1.0-2.0 microns, the ridge waveguide of 2-4 microns of width in active device area production；Passive device is S
Waveguide, multi-mode interference coupler or array waveguide grating coupler；Passive wave guide is the deep 1.0- in passive device region production
4.0 microns, the ridge waveguide of 2-4 microns of width or specific width, as shown in figure 12, Figure 12 is to have made active and passive wave guide knot
The schematic diagram of structure.
Step 9: in the electroabsorption modulator region etch depth waveguiding structure of active device, wherein the depth waveguiding structure is
2.5-4.0 microns deep, 2-4 microns and 6-10 microns double-rib waveguide structures of width.
Step 10: growing insulating medium layer 16 on the surface for being etched with deep waveguiding structure print, as shown in Figure 9.
Step 11: each active device is outputed into electrode contact window (not shown).
Step 12: metal P electrode 17 is prepared on each active device, as shown in Figure 10.
Step 13: the heavy doping contact layer 13 between active device being etched away, isolating trenches are formed, wherein the isolating trenches
For 50-200 nanometers of depth, long 20-100 microns of groove on active waveguide.
Step 14: InP substrate 1 is thinned, makes another metal N electrode 18 at the back side of thinned InP substrate 1, completes core
Piece preparation, as shown in figure 11.
Embodiment 2
The embodiment is substantially the same manner as Example 1, the difference is that: first, laser region grating is uniform grating,
The different excitation wavelengths of each multichannel laser device are by the wide determination of the different ridge in laser region；Second, constituency medium mask strip pair
Spacing be maintained at 15 microns it is constant, mask strip width is 5 microns to 50 microns successively gradual changes, and structural schematic diagram is as shown in figure 13.
In conclusion the method by lamination selective area growth makes multi-wavelength integreted phontonics transmitting chip, can separately design
Optimize laser quantum trap material and electroabsorption modulator quantum-well materials, by the spacing and item that adjust medium mask strip pair
Width, the lamination Quantum Well in selective area growth electroabsorption modulator region can get the EML array of identical extinction ratio.
Particular embodiments described above carries out the purpose of the present invention, technical scheme and beneficial effects further detailed
Illustrate, it should be understood that the above is only a specific embodiment of the present invention, be not intended to restrict the invention, it is all
In the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection model of the invention
Within enclosing.
Claims (10)
1. a kind of method of lamination selective area growth production multi-wavelength integreted phontonics transmitting chip, the multi-wavelength integreted phontonics emit core
Piece includes the active device and passive wave guide that detector, laser, modulator and amplifier are formed, and is included the following steps:
Step 1: the detector region in InP substrate makes constituency medium mask strip pair；
Step 2: successively being given birth in the InP substrate that production has constituency medium mask strip pair, around each constituency medium mask strip pair
It long InP buffer layer, lower limiting layer respectively, lower layer's multiple quantum well layer, etch stop layer, upper layer multiple quantum well layer and upper limits respectively
Preparative layer；
Step 3: corrosion removes upper limiting layer and the upper layer multiple quantum well layer respectively of modulator region and passive waveguide regions；
Step 4: corrosion removes the etch stop layer and lower layer's multiple quantum well layer of passive waveguide regions；
Step 5: docking growth passive wave guide sandwich layer；
Step 6: making distributed feedback grating on the upper limiting layer respectively of laser region, form print；
Step 7: successively epitaxial growth grating coating, doping cap rock and heavy doping contact layer on print, and etch away nothing
The heavy doping contact layer of source device area；
Step 8: etching active waveguide in active device area, etch passive wave guide in passive device region；
Step 9: in the electroabsorption modulator region etch depth waveguiding structure of active device；
Step 10: growing insulating medium layer on the surface for being etched with deep waveguiding structure print；
Step 11: each active device is outputed into electrode contact window；
Step 12: metal P electrode is prepared on each active device；
Step 13: the heavy doping contact layer between active device being etched away, isolating trenches are formed；
Step 14: InP substrate is thinned, makes another metal N electrode at the back side of thinned InP substrate, completes chip preparation.
2. the method for lamination selective area growth production multi-wavelength integreted phontonics transmitting chip according to claim 1, wherein walking
The medium of the rapid 1 constituency medium mask strip centering is silicon oxide or silicon nitride, and dielectric thickness is 50-200 nanometers.
3. the method for lamination selective area growth production multi-wavelength integreted phontonics transmitting chip according to claim 2, wherein walking
Medium mask strip pair in constituency described in rapid 1 occurs, the choosing corresponding to different array elements in pairs using array element spacing as the period
Spacing or mask strip width gradual change between area's medium mask strip pair, the array element spacing of the constituency medium mask strip pair
Period is 100 microns to 300 microns, and the spacing between the medium mask strip pair of constituency is 5 microns to 50 microns, and mask strip width is
10 microns to 50 microns.
4. the method for lamination selective area growth according to claim 1 production multi-wavelength integreted phontonics transmitting chip, wherein institute
It states lower limiting layer respectively and upper limiting layer respectively is InGaAsP the or InAlGaAs body material with InP substrate Lattice Matching, light
Photoluminescence peak wavelength is 1.0 microns -1.3 microns, with a thickness of 50 nanometers -200 nanometers.
5. the method for lamination selective area growth according to claim 1 production multi-wavelength integreted phontonics transmitting chip, wherein institute
The material for stating lower layer's multiple quantum well layer and upper layer multiple quantum well layer is that InGaAsP/InP system or InAlGaAs/InP system strain
Compensate multi-quantum pit structure；Number, thickness and the composition parameter of lower layer's multiple quantum well layer trap are according to the electric absorption in selection region
The requirement of modulator material structure is grown；Number, thickness and the composition parameter of upper layer multiple quantum well layer trap are according to non-selective region
The requirement of interior laser material structure is grown, lower layer's multiple quantum well layer electroabsorption modulator material structure in selection region
Wavelength is 30-60 nanometers shorter than the upper layer multiple quantum well layer laser material structure wavelength in non-selective region；In non-selection area
Material structure wavelength ratio lower layer's multiple quantum well layer electro-absorption modulation equipment in selection region of lower layer's multiple quantum well layer in domain
Expect that structure wavelength is 60-90 nanometers short；Lower layer's multiple quantum wells layer material structures wavelength in non-selective region compares non-selective region
Interior upper layer multiple quantum well layer laser material structure wavelength is 50-90 nanometers short, the upper layer Multiple-quantum in non-selective region
Well layer laser material in selection region lower layer's multiple quantum well layer electroabsorption modulator material be in same level.
6. the method for lamination selective area growth production multi-wavelength integreted phontonics transmitting chip according to claim 1, wherein walking
The rapid 5 passive wave guide sandwich layer is InP/InGaAsP/InP the or InP/InAlGaAs/InP sandwich layer structure to undope,
Middle InGaAsP or InAlGaAs is to be with InP substrate Lattice Matching, 200 nanometers -400 nanometers of thickness, photoluminescence peak wavelength
1.2 microns -1.4 microns of body material, upper and lower asymmetric InP thickness range are 20-300nm.
7. the method for lamination selective area growth production multi-wavelength integreted phontonics transmitting chip according to claim 1, wherein walking
Rapid 6 distributed feedback grating is the relief fabric of depth 10-60 nanometers, period 190-300 nanometer.
8. the method for lamination selective area growth production multi-wavelength integreted phontonics transmitting chip according to claim 1, wherein having
Source waveguide is deep 1.0-2.0 microns, the ridge waveguide of 2-4 microns of width in active device area production；Passive device is S wave
It leads, multi-mode interference coupler or array waveguide grating coupler；Passive wave guide is the deep 1.0-4.0 in passive device region production
The ridge waveguide of micron, 2-4 microns of width.
9. the method for lamination selective area growth production multi-wavelength integreted phontonics transmitting chip according to claim 1, wherein walking
The rapid 9 deep waveguiding structures are 2.5-4.0 microns deep, 2-4 microns and 6-10 microns double-rib waveguide structures of width.
10. the method for lamination selective area growth production multi-wavelength integreted phontonics transmitting chip according to claim 1, wherein walking
Rapid 13 isolating trenches are 50-200 nanometers of depth, long 20-100 microns of groove on active waveguide.
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| JP2019007997A (en) * | 2017-06-20 | 2019-01-17 | 日本電信電話株式会社 | Semiconductor optical element |
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