CN106532434A - Method for manufacturing multi-wavelength photon-integrated transmitting chip through lamination and selective-area-growth mode - Google Patents
Method for manufacturing multi-wavelength photon-integrated transmitting chip through lamination and selective-area-growth mode Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Disclosed is a method for manufacturing a multi-wavelength photon-integrated transmitting chip through a lamination and selective-area-growth mode. The method comprises the steps of manufacturing selective-area dielectric mask strip pairs on a substrate; enabling an InP buffer layer, a lower respective limiting layer, a lower multi-quantum-well layer, an etching stop layer, an upper multi-quantum-well layer, and an upper respective limiting layer to be grown in sequence; removing a part of the upper respective limiting layer and the upper multi-quantum-well layer; removing a part of the etching stop layer and the lower multi-quantum-well layer; enabling a passive waveguide core layer to be grown in a butt-jointing manner; manufacturing distributed feedback gratings on the upper respective limiting layer, performing epitaxial growth of a grating coverage layer, a doped cover layer and a heavily-doped contact layer in sequence, and etching off a part of the heavily-doped contact layer; etching active waveguide, passive waveguide and deep waveguide structures; enabling an insulating dielectric layer to be grown; forming an electrode contact window; preparing a metal P electrode; forming an isolation trench; and manufacturing another metal N electrode on the back surface of the substrate to complete the preparation of the chip.
Description
Technical field
The present invention relates to field of optoelectronic devices, more particularly to a kind of lamination selective area growth making multi-wavelength integreted phontonics
The method of core shooting piece.
Background technology
With quick increase of the mankind to information capacity requirements, exponentially form rapidly increases the capacity of optical fiber telecommunications system,
So as to highly reliable, inexpensive and low-loss integreted phontonics (photonics integrated circuits) technology is put on
Schedule.Single-chip integration multi-wavelength integreted phontonics transmitting chip is the important means for realizing integreted phontonics, and it includes several functions
Device：Photodetector (PD), distributed feedback laser (DFB), electroabsorption modulator (EAM), semiconductor optical amplifier
(SOA), passive wave guide and passive wave multiplexer part such as multi-mode interference coupler (MMI), array waveguide grating (AWG) etc., device system
Standby process is complicated, production equipment and process conditions is required very high.Integreted phontonics technology main at present has：Selection region is given birth to
Long technology (SAG) (C.Zhang, H.Zhu, S.Liang, Opt.Laser Technol, 2014), quantum well mixing (QWI)
(L.Hou, M.Haji, R.Dylewicz, Photonica Technol.Lett, 2011), Butt-coupling growth (BJG)
(L.Han, S.Liang, H.Wang, Opt.Express, vol.22, no.24, p.30368, Dec.2014), skew SQW
(OQW) (Q.Kan, F.Zhou, L.Wang, B.Wang.Chinese Opt.Lett., 2005；C.Watson,
V.Tolstikhin, K.Pimenov, in IEEE Photonic Society 24th Annual Meeting, 2011) etc..
Wherein SAG technologies once can extend the quantum-well materials of different band gap wavelength outward and interface is excessively uniform, but, selection region
Material with non-selective region is while growth, it is impossible to be separately optimized, and the growth parameter(s) of each device material is compromise product, than
It is harsher.QWI technologies are a kind of rear technique, it is to avoid the multiple etching regrowth needed for other technologies it is loaded down with trivial details, but easily
Damage quantum-well materials quality and increase extra loss.BJG technologies can be separately designed and be optimized to individual part of devices structure,
However it is necessary that increasing extension number of times, and easily defect and extra light loss are introduced in butt joint interface.OQW technologies are by one
The method that secondary extension obtains bi-material, one time extension includes passive sandwich layer waveguide and multi-quantum well active region two parts, afterwards
Etch away the SQW of passive device part.The program is adapted to the integrated of active/passive device, however it is necessary that special ridge waveguide
Structure design is reducing transition coupling loss.Above-mentioned technology complies with one's wishes not to the utmost, and many years ago, one of declarer of the present invention proposes choosing
Select double active area lamination (SAG-DSAL) technology of area epitaxy (HongLiang Zhu and Wei Wang, United States Patent (USP) US7,
476,558B2), the program elects epitaxial growth area in modulator segment, and one time extension grows modulator and laser instrument simultaneously
Lamination Quantum well active plot structure, then erodes the upper strata LD_MQW layers of modulator region.Can be obtained using this kind of scheme
Process is simple, the high Electroabsorption Modulated Laser chip of Low threshold coupling efficiency.The present patent application is proposed based on this patent
A kind of method that lamination selective area growth makes multi-wavelength integreted phontonics transmitting chip, with it has been reported that multi-wavelength integreted phontonics
Transmitting chip technology is compared, this kind of method process is simple, and the parameter of laser instrument and each passage electroabsorption modulator is with once outer
The different time sections prolonged are separately optimized, so as to improve the yield rate and characteristic index of integreted phontonics transmitting chip.
As described above, be the multi-wavelength integreted phontonics transmitting chip that processability is good at present, most of needs complexity
Technique, so as to cause device yield low, cost of manufacture is high.Additionally, Electroabsorption Modulated Laser (EML) chip integrated at present
In, the EAM material behaviors of each channel are consistent, different corresponding to the DFB excitation wavelengths of different channels, each channel EAM's
PL peak wavelengths are poor from the excitation wavelength of DFB different, so as to cause the EAM extinction ratios of different channels different, and then affect which
Dynamic characteristic.
The content of the invention
Preparation method disclosed by the invention, can be with the same of facilitating chip manufacture craft relative to conventional material integrated technology
When be separately optimized DFB and EAM, so as to lift its performance respectively.Further, since the particularity of lamination selective area growth method, can be with
The material behavior of the EAM of each channel is modulated respectively, be thereby may be ensured that the extinction ratio of all channels is consistent, is greatly optimized core
The performance of piece.
To reach above-mentioned technical purpose, the present invention provides a kind of lamination selective area growth and makes multi-wavelength integreted phontonics transmitting core
The method of piece, the multi-wavelength integreted phontonics transmitting chip include the active device that detector, laser instrument, modulator and amplifier are formed
Part and passive wave guide, comprise the steps：
Step 1：Detector region in InP substrate makes constituency medium mask strip pair；
Step 2：Make have in the InP substrate of constituency medium mask strip pair, around each constituency medium mask strip pair according to
Secondary growth InP cushions, lower limiting layer respectively, lower floor's multiple quantum well layer, etch stop layer, upper strata multiple quantum well layer and upper point
Other limiting layer；
Step 3：Corrosion removes upper limiting layer and the upper strata multiple quantum well layer respectively of modulator region and passive waveguide regions；
Step 4：Corrosion removes the etch stop layer and lower floor's multiple quantum well layer of passive waveguide regions；
Step 5：Docking growth passive wave guide sandwich layer；
Step 6：Distributed feedback grating is made on the upper limiting layer respectively of laser region, print is formed；
Step 7：Epitaxial growth light gate overlap, doping cap rock and heavy doping contact layer successively on print, and etch
Fall the heavy doping contact layer of passive device region；
Step 8：Active waveguide is etched in active device area, passive wave guide is etched in passive device region；
Step 9：In the electroabsorption modulator region etch depth waveguiding structure of active device；
Step 10：In the superficial growth insulating medium layer for being etched with deep waveguiding structure print；
Step 11：Each active device is outputed into electrode contact window；
Step 12：Metal P electrode is prepared on each active device；
Step 13：Heavy doping contact layer between active device is etched away, isolating trenches are formed；
Step 14：Thinning InP substrate, makes another metal N electrode at the back side of thinning InP substrate, completes chip system
It is standby.
Said method proposed by the present invention makes multi-wavelength integreted phontonics transmitting core using the method for lamination selective area growth
Piece, it is only necessary to which the i.e. achievable DFB of extension is integrated from the opto-electronic device of two kinds of different band gap wavelengths of EAM twice, and can be respectively
Optimization DFB and the material in EAM regions.On this basis, the bar width and spacing of the constituency medium mask strip pair in EAM regions are adjusted,
Can realize that each channel laser excitation wavelength and the PL peak wavelength differences of EAM remain a steady state value, so as to realize each letter
Road extinction ratio is consistent, and can cause short wavelength's multiple quantum well layer of lower floor's electroabsorption modulator in electroabsorption modulator region
Be consistent on long wavelength's MQW layer height of the upper strata laser instrument of laser region, so as to reduce coupling loss.This
The method for planting lamination selective area growth, while the manufacture craft of photon integrated chip is simplified, can improve the performance of chip.
Description of the drawings
To further illustrate present disclosure, the present invention is further retouched below in conjunction with the drawings and specific embodiments
State, wherein：
Fig. 1 is the side that the method for the utilization lamination selective area growth that the present invention is provided makes multi-wavelength integreted phontonics transmitting chip
Method flow chart；
Fig. 2 to Figure 11 is the process chart that multi-wavelength integreted phontonics chip structure is made according to the embodiment of the present invention；
The structural representation of the multi-wavelength integreted phontonics transmitting chip that Figure 12 is made according to the embodiment of the present invention；
Figure 13 is the structural representation of the constituency medium mask strip pair of the making multi-wavelength integreted phontonics transmitting chip of embodiment 2
Figure.
Specific embodiment
Embodiment 1
Fig. 1 and Fig. 2 to Figure 11 is refer to, the present invention provides a kind of lamination selective area growth and makes the transmitting of multi-wavelength integreted phontonics
The method of chip, the multi-wavelength integreted phontonics transmitting chip include detector (PD), laser instrument (DFB), modulator (EAM) and put
Active device and passive wave guide that big device (SOA) is formed, comprise the steps：
Step 1：Detector region in InP substrate 1 makes constituency medium mask strip to 2, the constituency medium mask
Bar is silica or silicon nitride to the medium in 2, and dielectric thickness is 50-200 nanometers, and the constituency medium mask strip is to 2 with battle array
Column unit spacing occurred in pairs for the cycle, and array element pitch period is 100 microns to 300 microns, corresponding to different array lists
The constituency medium mask strip of unit is 5 microns to 50 microns gradual changes to the spacing between 2, the wherein signal of constituency medium mask strip pair
Figure is as shown in Figure 2.
Step 2：Make have in InP substrate 1 of the constituency medium mask strip to 2, each constituency medium mask strip to 2 around
Grown InP cushion 3, lower respectively limiting layer 4, lower floor's multiple quantum well layer 5, etch stop layer 6, upper strata multiple quantum well layer 7 successively
And upper limiting layer 8 respectively；Wherein described lower limiting layer respectively 4 and upper limiting layer respectively 8 are and 1 Lattice Matching of InP substrate
InGaAsP or InAlGaAs body materials, its photoluminescence peak wavelength are 1.0 microns -1.3 microns, and thickness is 50 nanometer -200
Nanometer；The material of wherein described lower floor's multiple quantum well layer 5 and upper strata multiple quantum well layer 7 be InGaAsP/InP systems or
InAlGaAs/InP system strain compensation multi-quantum pit structures；The number of 5 trap of lower floor's multiple quantum well layer, thickness and composition parameter are pressed
Impinge upon the requirement growth of electroabsorption modulator material structure in selection region；The number of 7 trap of upper strata multiple quantum well layer, thickness and into
Divide parameter according to the requirement growth of laser material structure in non-selective region, lower floor's multiple quantum well layer in selection region
Upper strata multiple quantum well layer 7 laser material structure wavelength of the 5 electroabsorption modulator material structure wavelength ratios in non-selective region
Short 30-60 nanometers；The lower floor's multiple quantum well layer 5 in non-selective region material structure wavelength ratio in selection region lower floor it is many
The short 60-90 nanometers of 5 electroabsorption modulator material structure wavelength of quantum well layer；Lower floor's multiple quantum well layer 5 in non-selective region
The short 90-50 nanometers of 7 laser material structure wavelength of upper strata multiple quantum well layer in material structure wavelength ratio non-selective region, it is described
7 laser material of upper strata multiple quantum well layer in non-selective region is adjusted with 5 electric absorption of lower floor's multiple quantum well layer in the selection region
, in same level, its structural representation is as shown in Figure 3 for equipment material processed.
Step 3：Corrosion removes upper limiting layer 8 and the upper strata multiple quantum well layer respectively of modulator region and passive waveguide regions
7, as shown in Figure 4.
Step 4：Corrosion removes the etch stop layer 6 and lower floor's multiple quantum well layer 5 of passive waveguide regions, as shown in Figure 5.
Step 5：Docking growth passive wave guide sandwich layer 9, as shown in fig. 6, wherein described passive wave guide sandwich layer 9 is plain
InP/InGaAsP/InP or InP/InAlGaAs/InP sandwich Rotating fields, wherein InGaAsP or InAlGaAs are to serve as a contrast with InP
Bottom Lattice Matching, 200 nanometers -400 nanometers of thickness, the body material that photoluminescence peak wavelength is 1.2 microns -1.4 microns, up and down
Asymmetric InP thickness ranges are 20-300nm.
Step 6：Distributed feedback grating 10 is made on the upper limiting layer 8 respectively of laser region, as shown in fig. 7, wherein
The distributed feedback grating 10 is depth 10-60 nanometer, the relief fabric of cycle 190-300 nanometer, laser array it is each logical
The cycle of road grating 10 is determined by its corresponding excitation wavelength；The electricity suction of the corresponding passage of excitation wavelength of each multichannel laser device
The PL peak wavelengths for receiving modulator remain a steady state value.
Step 7：Epitaxial growth light gate overlap 11, doping cap rock 12 and heavy doping contact layer 13 successively on print,
As shown in figure 8, and etch away the heavy doping contact layer 13 of passive waveguide regions, wherein the grating coating is thickness 50-300
Nanometer, undope or the type layer of InP contrary with InP substrate be lightly doped, concentration 1-3 × 10 are lightly doped17/cm3；Doping cap rock be
The doping type layer of InP contrary with InP substrate, thickness 1.0-2.0 microns, doping content 0.5-2 × 1018/cm3Gradual change；It is heavily doped
Miscellaneous contact layer is the doping type InGaAs layer contrary with InP substrate, thickness 50-200 nanometers, doping content 1.0-5 × 1019/
cm3。
Step 8：Active waveguide 14 is etched in active device area, passive wave guide 15 is etched in passive device region, wherein
Active waveguide 14 be active device area make deep 1.0-2.0 microns, width 2-4 microns ridge waveguide；Passive device is S
Waveguide, multi-mode interference coupler or array waveguide grating coupler；Passive wave guide is the deep 1.0- made in passive device region
4.0 microns, the ridge waveguide of width 2-4 microns or specific width, as shown in figure 12, Figure 12 is tied to have made active and passive wave guide
The schematic diagram of structure.
Step 9：In the electroabsorption modulator region etch depth waveguiding structure of active device, wherein the deep waveguiding structure is
Deep 2.5-4.0 microns, width 2-4 microns and 6-10 micron double-rib waveguide structures.
Step 10：In the superficial growth insulating medium layer 16 for being etched with deep waveguiding structure print, as shown in Figure 9.
Step 11：Each active device is outputed into electrode contact window (not shown).
Step 12：Metal P electrode 17 is prepared on each active device, as shown in Figure 10.
Step 13：Heavy doping contact layer 13 between active device is etched away, isolating trenches is formed, wherein the isolating trenches
For the groove of depth 50-200 nanometers, long 20-100 microns on active waveguide.
Step 14：Thinning InP substrate 1, makes another metal N electrode 18 at the back side of thinning InP substrate 1, completes core
Prepared by piece, as shown in figure 11.
Embodiment 2
The embodiment is substantially the same manner as Example 1, and difference is：First, laser region grating is uniform grating,
The different excitation wavelengths of each multichannel laser device are determined by the different ridge width in laser region；Second, constituency medium mask strip pair
Spacing be maintained at 15 microns it is constant, a width of 5 microns to the 50 microns gradual changes successively of mask strip, its structural representation are as shown in figure 13.
In sum, multi-wavelength integreted phontonics transmitting chip is made by the method for lamination selective area growth, can be separately designed
Optimization laser quantum trap material and electroabsorption modulator quantum-well materials, by the spacing and bar that adjust medium mask strip pair
Width, the lamination SQW in selective area growth electroabsorption modulator region can obtain the EML arrays of identical extinction ratio.
Particular embodiments described above, is carried out to the purpose of the present invention, technical scheme and beneficial effect further in detail
Illustrate that the be should be understood that specific embodiment that the foregoing is only the present invention is not limited to the present invention, it is all
In the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection model of the present invention
Within enclosing.
Claims (10)
1. a kind of method that lamination selective area growth makes multi-wavelength integreted phontonics transmitting chip, the multi-wavelength integreted phontonics launch core
Piece includes the active device of detector, laser instrument, modulator and amplifier formation and passive wave guide, comprises the steps：
Step 1：Detector region in InP substrate makes constituency medium mask strip pair；
Step 2：Have in the InP substrate of constituency medium mask strip pair, given birth to around each constituency medium mask strip pair successively making
Long InP cushions, lower limiting layer respectively, lower floor's multiple quantum well layer, etch stop layer, upper strata multiple quantum well layer and upper limit respectively
Preparative layer；
Step 3：Corrosion removes upper limiting layer and the upper strata multiple quantum well layer respectively of modulator region and passive waveguide regions；
Step 4：Corrosion removes the etch stop layer and lower floor's multiple quantum well layer of passive waveguide regions；
Step 5：Docking growth passive wave guide sandwich layer；
Step 6：Distributed feedback grating is made on the upper limiting layer respectively of laser region, print is formed；
Step 7：Epitaxial growth light gate overlap, doping cap rock and heavy doping contact layer successively on print, and etch away nothing
The heavy doping contact layer of source device area；
Step 8：Active waveguide is etched in active device area, passive wave guide is etched in passive device region；
Step 9：In the electroabsorption modulator region etch depth waveguiding structure of active device；
Step 10：In the superficial growth insulating medium layer for being etched with deep waveguiding structure print；
Step 11：Each active device is outputed into electrode contact window；
Step 12：Metal P electrode is prepared on each active device；
Step 13：Heavy doping contact layer between active device is etched away, isolating trenches are formed；
Step 14：Thinning InP substrate, makes another metal N electrode at the back side of thinning InP substrate, completes chip preparation.
2. the method that lamination selective area growth according to claim 1 makes multi-wavelength integreted phontonics transmitting chip, wherein walking
The medium of constituency medium mask strip centering described in rapid 1 is silica or silicon nitride, and dielectric thickness is 50-200 nanometers.
3. the method that lamination selective area growth according to claim 2 makes multi-wavelength integreted phontonics transmitting chip, wherein walking
Medium mask strip pair in constituency described in rapid 1, occurred with array element spacing in pairs as the cycle, corresponding to the choosing of different array elements
Spacing or mask strip width gradual change between area's medium mask strip pair, the array element spacing of the constituency medium mask strip pair
Cycle is 100 microns to 300 microns, and the spacing between the medium mask strip pair of constituency is 5 microns to 50 microns, and mask strip width is
10 microns to 50 microns.
4. the method that lamination selective area growth according to claim 1 makes multi-wavelength integreted phontonics transmitting chip, wherein institute
State lower limiting layer respectively and upper limiting layer respectively is InGaAsP or InAlGaAs body materials with InP substrate Lattice Matching, its light
Photoluminescence peak wavelength is 1.0 microns -1.3 microns, and thickness is 50 nanometers -200 nanometers.
5. the method that lamination selective area growth according to claim 1 makes multi-wavelength integreted phontonics transmitting chip, wherein institute
The material for stating lower floor's multiple quantum well layer and upper strata multiple quantum well layer is that InGaAsP/InP systems or InAlGaAs/InP systems are strained
Compensation multi-quantum pit structure；The number of lower floor's multiple quantum well layer trap, thickness and composition parameter are according to the electric absorption in the selection region
The requirement growth of modulator material structure；The number of upper strata multiple quantum well layer trap, thickness and composition parameter are according to non-selective region
The requirement growth of interior laser material structure, lower floor's multiple quantum well layer electroabsorption modulator material structure in selection region
Upper strata multiple quantum well layer laser material structure wavelength short 30-60 nanometer of the wavelength ratio in non-selective region；In non-selection area
The material structure wavelength ratio of the lower floor's multiple quantum well layer in domain lower floor's multiple quantum well layer electro-absorption modulation equipment in the selection region
The short 60-90 nanometers of material structure wavelength；Lower floor's MQW layer material structures wavelength ratio non-selective region in non-selective region
The short 90-50 nanometers of interior upper strata multiple quantum well layer laser material structure wavelength, the upper strata Multiple-quantum in non-selective region
Well layer laser material is with lower floor's multiple quantum well layer electroabsorption modulator material in the selection region in same level.
6. the method that lamination selective area growth according to claim 1 makes multi-wavelength integreted phontonics transmitting chip, wherein walking
Passive wave guide sandwich layer described in rapid 5 is plain InP/InGaAsP/InP or InP/InAlGaAs/InP sandwiches Rotating fields, its
Middle InGaAsP or InAlGaAs are to be with InP substrate Lattice Matching, 200 nanometers -400 nanometers of thickness, photoluminescence peak wavelength
1.2 microns -1.4 microns of body material, asymmetric InP thickness ranges are 20-300nm up and down.
7. the method that lamination selective area growth according to claim 1 makes multi-wavelength integreted phontonics transmitting chip, wherein walking
Distributed feedback grating described in rapid 6 is depth 10-60 nanometer, the relief fabric of cycle 190-300 nanometer.
8. the method that lamination selective area growth according to claim 1 makes multi-wavelength integreted phontonics transmitting chip, wherein having
Source waveguide be active device area make deep 1.0-2.0 microns, width 2-4 microns ridge waveguide；Passive device is S ripples
Lead, multi-mode interference coupler or array waveguide grating coupler；Passive wave guide is the deep 1.0-4.0 made in passive device region
The ridge waveguide of micron, width 2-4 microns or specific width.
9. the method that lamination selective area growth according to claim 1 makes multi-wavelength integreted phontonics transmitting chip, wherein walking
Described in rapid 9, deep waveguiding structure is deep 2.5-4.0 microns, width 2-4 microns and 6-10 micron double-rib waveguide structures.
10. the method that lamination selective area growth according to claim 1 makes multi-wavelength integreted phontonics transmitting chip, wherein walking
Isolating trenches described in rapid 13 are depth 50-200 nanometers, the groove of long 20-100 microns on active waveguide.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611202129.6A CN106532434B (en) | 2016-12-22 | 2016-12-22 | The method of lamination selective area growth production multi-wavelength integreted phontonics transmitting chip |
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|---|---|---|---|
| CN201611202129.6A CN106532434B (en) | 2016-12-22 | 2016-12-22 | The method of lamination selective area growth production multi-wavelength integreted phontonics transmitting chip |
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| CN106532434A true CN106532434A (en) | 2017-03-22 |
| CN106532434B CN106532434B (en) | 2019-03-22 |
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| CN110061424A (en) * | 2018-12-07 | 2019-07-26 | 深圳市特发信息股份有限公司 | A kind of distributed feedback laser array and its manufacturing method |
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| CN111146681A (en) * | 2019-12-19 | 2020-05-12 | 中国科学院上海微系统与信息技术研究所 | SiC-based InP photonic integrated module and preparation method thereof |
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| CN111883524A (en) * | 2020-07-28 | 2020-11-03 | 湖南汇思光电科技有限公司 | Method for monolithic integration of photonic device based on silicon-based quantum dots |
| CN112670823A (en) * | 2020-12-23 | 2021-04-16 | 中国科学院半导体研究所 | Method for manufacturing electric absorption modulation laser |
| CN113300218A (en) * | 2021-05-22 | 2021-08-24 | 福建中科光芯光电科技有限公司 | Silicon-based optical communication C-waveband high-linearity surface emitting laser light source and manufacturing method thereof |
| CN113300218B (en) * | 2021-05-22 | 2022-10-14 | 福建中科光芯光电科技有限公司 | Silicon-based optical communication C-waveband high-linearity surface emitting laser light source and manufacturing method thereof |
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