CN113900285B - Technology insensitive modulator - Google Patents
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- CN113900285B CN113900285B CN202111488082.5A CN202111488082A CN113900285B CN 113900285 B CN113900285 B CN 113900285B CN 202111488082 A CN202111488082 A CN 202111488082A CN 113900285 B CN113900285 B CN 113900285B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
Abstract
The application provides a process insensitive modulator, which comprises a closed waveguide and a strip waveguide which are coupled through a coupling region, wherein the coupling region comprises a first fixed width waveguide section, a second fixed width waveguide section, a third fixed width waveguide section, a fourth fixed width waveguide section, a first gradually-changed width waveguide section and a second gradually-changed width waveguide section; the first fixed-width waveguide section, the first gradually-changed-width waveguide sections symmetrically arranged at two sides of the first fixed-width waveguide section, and the second fixed-width waveguide sections symmetrically arranged at two sides of the first gradually-changed-width waveguide section are arranged in the closed waveguide in the coupling region; the third fixed-width waveguide section, the second gradually-changed-width waveguide sections symmetrically arranged at two sides of the third fixed-width waveguide section, and the fourth fixed-width waveguide sections symmetrically arranged at two sides of the second gradually-changed-width waveguide section are arranged in the strip waveguide in the coupling area. The influence of the interval between the closed waveguide and the strip waveguide on the coupling coefficient is reduced, and the problem that the performance of the modulator is greatly influenced by the manufacturing process is solved.
Description
Technical Field
The present application relates to a modulator, and more particularly to a structure and application thereof.
Background
The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.
The optical fiber communication experiences the technical development process from low speed, low bandwidth to high speed and high bandwidth, and becomes the most important communication mode in the current society. The optical fiber communication technology relates to various aspects such as lasers, repeaters, transmitting and receiving optical devices, optical fibers and the like, and the characteristics of basic materials used by all components restrict the development of the optical communication technology to a more advanced level. In the past decades, the leading material for the development of the electronics industry was silicon, and the development of silicon materials has greatly promoted the development of technology. Because the silicon material has the advantages of wide source, cost advantage, mature processing technology and the like, the silicon-based photon technology research is put into the industry in many times. Since silicon is an indirect bandgap material and cannot transfer energy directly to emitted photons like direct bandgap materials such as gallium arsenide, indium phosphide, etc., silicon was primarily used for passive optical devices in the early days. In recent years, with the breakthrough progress of theoretical research, silicon materials are also gradually applied to the applications of optical modulators, light emitting diodes and photodetectors.
The silicon-based electro-optical modulator mainly utilizes the plasma dispersion effect to realize electro-optical modulation. The plasma dispersion effect means that the concentration of free carriers in a semiconductor can influence the real part and the imaginary part of a refractive index, and the modulation from an electric signal to an optical signal is realized by controlling the change of the refractive index of a modulator through an external electric signal. The silicon optical modulator mainly has the structural forms of MZI type and micro-ring type, and the MZI (Mach-Zehnder Interferometer) type modulator is based on a modulation signal generated by two-arm interference, and the signal modulation is related to the length of a modulation arm of the modulator. The silicon-based micro ring (micro ring) modulator has a compact structure, realizes low power consumption and a very high modulation rate, and becomes an important technology for solving the requirement of expandability of a short-distance optical link.
Disclosure of Invention
The application discloses a modulator, the modulation effect of which is insensitive to the manufacturing process tolerance, the specific structure comprises a first waveguide and a second waveguide, the first waveguide and the second waveguide are coupled through a coupling region, the first waveguide forms a closed ring in space, and the second waveguide extends in the same direction in space. The process insensitive modulator specifically comprises a closed waveguide and a strip waveguide, wherein the closed waveguide and the strip waveguide are coupled through a coupling region, and the coupling region comprises a first fixed-width waveguide section, a second fixed-width waveguide section, a third fixed-width waveguide section, a fourth fixed-width waveguide section, a first gradually-changed-width waveguide section and a second gradually-changed-width waveguide section; the closed waveguide comprises a first fixed-width waveguide section, first gradually-changed-width waveguide sections symmetrically arranged on two sides of the first fixed-width waveguide section, and second fixed-width waveguide sections symmetrically arranged on two sides of the first gradually-changed-width waveguide section; the third fixed-width waveguide section, the second gradually-changed-width waveguide sections symmetrically arranged at two sides of the third fixed-width waveguide section, and the fourth fixed-width waveguide sections symmetrically arranged at two sides of the second gradually-changed-width waveguide section are arranged in the strip waveguide.
In some embodiments, the lengths of the first fixed-width waveguide segment and the third fixed-width waveguide segment are the same, and the lengths of the first fixed-width waveguide segment and the third fixed-width waveguide segment are synchronously designed and adjusted, so that the influence of the interval between the closed waveguide and the strip waveguide on the coupling coefficient is reduced, and the problem that the performance of the modulator is greatly influenced by the manufacturing process is solved.
In some embodiments, the first and second tapered-width waveguide segments have the same length, the second and fourth fixed-width waveguide segments have the same length, and the design length matches the lengths of the first and third fixed-width waveguide segments to implement a process insensitive modulator and to implement coupling coefficient planarization.
In some embodiments the closed waveguide is provided as a racetrack waveguide. The outer side of the runway type waveguide, which is far away from the coupling area, is provided with a first doping area, the inner side of the runway type waveguide is provided with a second doping area, the first doping area and the second doping area are externally connected with a voltage, and a voltage signal is provided for the runway type waveguide, so that electro-optic modulation of light beams transmitted in the runway type waveguide is realized.
In certain embodiments, the closed waveguide is configured as a ring waveguide.
In some embodiments, a first carrier region is disposed outside the coupling region, a second carrier region is disposed inside the coupling region, the first carrier region and the second carrier region are externally connected with a voltage, and the voltage modulates and transmits the light beam through the coupling region to load the electric signal. In some embodiments, the strip waveguide and the closed waveguide are designed as intrinsic regions, so that the influence of a doping process on a coupling coefficient is effectively avoided.
In some embodiments, the first doped region is doped with N-type carriers and the second doped region is doped with P-type carriers. And reverse bias modulation is adopted, so that the modulation bandwidth is large.
In some embodiments, the closed waveguide is spaced from the slab coupling region by a distance less than the wavelength of the transmitted light.
In some embodiments, the closed waveguides and the strip waveguides are silicon confined in a silica cladding.
Drawings
FIG. 1 is a schematic view of a micro-ring structure according to an embodiment
FIG. 2 is a schematic cross-sectional view of a micro-ring structure according to an embodiment
FIG. 3 is a diagram illustrating the effect of the coupling interval of the micro-ring modulator on the coupling strength
FIG. 4 is a schematic diagram of a waveguide structure of a modulator according to an embodiment
FIG. 5 is a schematic diagram of a waveguide structure of a racetrack modulator according to an embodiment
FIG. 6 is a schematic diagram of an embodiment of an internal cross-section of a modulator
FIG. 7 is a schematic diagram of a waveguide structure of a modulator according to an embodiment
FIG. 8 is a graph showing the spectral comparison of the coupling coefficients of the modulators of FIGS. 6 and 1
FIG. 9 is a schematic diagram of a modulation region structure according to an embodiment
FIG. 10 (a) is a schematic diagram of a micro-ring modulator and its input/output patterns according to an embodiment, (b) is a schematic diagram of a racetrack modulator and its input/output patterns according to an embodiment, and (c) is a schematic diagram of the modulator and its input/output patterns in FIG. 9
FIG. 11 is a schematic diagram of the transmission spectrum of the micro-ring modulator in FIG. 10 (a)
FIG. 12 is a schematic diagram showing a transmission spectrum of the track modulator in FIG. 10 (b)
Fig. 13 is a cross-sectional schematic diagram of the modulator of fig. 9.
Detailed Description
The following description will further specifically describe embodiments of the present application with reference to the accompanying drawings.
Silicon-based optoelectronics has been increasingly studied by the industry in recent years as an important solution for large-scale integrated optical circuits. With the inapplicability of moore's law, the development of optoelectronic integration technology has great significance to the progress of chip integration technology. The performance of the optical modulator, which is a key active device at the optical transmitting end, is enough to affect the signal processing capability of the whole optical network, but at present, there are many problems in terms of miniaturization and high modulation rate of the modulator.
The silicon-based micro-ring resonant cavity electro-optic modulator is small in size and high in process sensitivity, and can achieve high modulation efficiency in a small space by utilizing the optical coupling principle as a solution for achieving miniaturization and high efficiency of the modulator.
In optical waveguide theory, it is often necessary to pass light from one optical waveguide into another, a process known as optical coupling. When two waveguides are at a certain distance, the energy of one waveguide will be transmitted to the other waveguide through evanescent wave even under the condition of total reflection, and the transfer of the light energy is called optical waveguide coupling. The guided wave mode of the optical waveguide refers to the mode of electromagnetic waves which can exist in the optical waveguide, mode coupling occurs in the transmission process, the mode coupling is transmitted to a part in a radiation mode, so that guided waves generate loss, the guided waves are transmitted to another part in a guided wave mode to cause the change of the transmission phase of the optical waves and the deformation of the envelope of the optical waves, and different optical elements can be designed by utilizing the theory.
Assuming no loss in the transmission process, a guided wave mode propagating along the z-axis, the transmission equation is
E=E0exp[i(kz-wt)](formula 1)
Wherein E0Expressed as an equation
dE/dz = ikE (equation 2)
The solution of (1). For two guided wave modes EaAnd EbConsidering the coupling between the modes, the following equation is satisfied.
dEa/dz=ikaEa+KabEb(formula 3)
dEb/dz=ikbEb+KbaEa(formula 4)
Equations 3 and 4 are general forms of two guided wave mode coupling equations. In the formula, kaAnd kbIs the wavenumber, K, at which the two modes are independentabAnd KbaIs the coupling coefficient. In research, the coupling system of the optical waveguide can be equivalent to the optical waveguide subjected to perturbation.
When light is transmitted in the waveguide, not all light can be constrained in the waveguide, a part of energy exists in a medium around the waveguide in the form of an evanescent field, and the higher the order of the mode is, the higher the energy carried by the evanescent field is. The evanescent field is intuitively understood from geometric optics, the light guide of the waveguide is that the light wave is continuously subjected to total reflection in the advancing direction, the reflection is not at the interface of the waveguide and the cladding, but the incident light continuously extends to the depth of about 1 wavelength in the cladding with low refractive index and then returns to the waveguide, and the actual reflecting surface and the incident surface have displacement of one wavelength order. By using the principle, two waveguides with the distance of about 1 transmission wavelength can be designed, and light is transmitted into another waveguide directly without reflection after entering a space between the two waveguides, which is called evanescent coupling.
As shown in fig. 1, the micro-ring modulator 100 adopts the above principle, designs a coupling structure of a strip waveguide and a micro-ring waveguide, amplifies the coupling portion 101 of the micro-ring waveguide and the strip waveguide, and adjusts the interval d between the micro-ring waveguide and the strip waveguide to realize the coupling of light from the strip waveguide to the micro-ring waveguide.
As shown in fig. 2, the part of the micro-ring modulator 200 that realizes the electro-optical modulation is a modulation region 201, and an applied voltage changes the carrier concentration of the modulation region 201, thereby changing the effective refractive index of the modulation region 201, changing the equivalent optical path of optical transmission, and finally realizing the light constructive and destructive.
The distance d between the micro-ring waveguide and the strip waveguide affects the transmission light modulation effect, and as shown in fig. 3, the wavelength spectrum 300 of the micro-ring modulator with different distances d is shown, the spectrum 301 is the wavelength spectrum of the micro-ring modulator with the distance d of 0nm, the spectrum 302 is the wavelength spectrum of the micro-ring modulator with the distance d of 30nm, the spectrum 303 is the wavelength spectrum of the modulator with the distance d of 40nm, the spectrum 304 is the wavelength spectrum of the modulator with the distance d of 60nm, and the spectrum 305 is the wavelength spectrum of the modulator with the distance d of 100 nm. Fig. 3 reflects the influence of the change of the interval d from 0 to 100nm on the coupling coefficient, so as to influence the transmission spectrum, and it can be seen from fig. 3 that the small change of the interval d can cause the larger drift of the transmission spectrum, so as to influence the extinction ratio of the modulator, and the micro-ring modulator is greatly influenced by the manufacturing process.
Fig. 4 shows a ring Modulator 400, which combines an MZI (Mach-Zehnder Modulator) structure with a micro-ring Modulator structure, where the coupling coefficient is determined by the MZI structure 401, the length of the MZI structure 401 is adjusted, the influence of the adjustment process on the coupling coefficient is adjusted, and a certain effect is achieved in stabilizing the process sensitivity of the Modulator.
The modulator 500 shown in fig. 5 includes a racetrack waveguide 502 and an elongated waveguide 503, the racetrack waveguide 502 is coupled with the elongated waveguide 503 by a coupling region 501, the width of the upper waveguide in the coupling region 501 is first widened and then narrowed along the light propagation direction, the width of the middle part of the upper waveguide in the coupling region 501 is greater than the widths of the two ends, and the width of the lower waveguide in the coupling region 501 is first narrowed and then widened along the light propagation direction. Specifically, the coupling region 501 includes fixed-width waveguide segments, including a first fixed-width waveguide segment 5013, two sets of second fixed-width waveguide segments 5011, a third fixed-width waveguide segment 5016, two sets of fourth fixed-width waveguide segments 5014, and tapered-width waveguide segments; the tapered width waveguide segments include two sets of first tapered width waveguide segments 5012 and two sets of second tapered width waveguide segments 5015. The first fixed-width waveguide segment 5013 has a width greater than the second fixed-width waveguide segment 5011 and the first tapered-width waveguide segment 5012 has a width greater than the second fixed-width waveguide segment 5011. A first fixed-width waveguide segment 5013, a first tapered-width waveguide segment 5012 symmetrically disposed on both sides of the first fixed-width waveguide segment 5013, and a second fixed-width waveguide segment 5011 symmetrically disposed on both sides of the first tapered-width waveguide segment 5012 are disposed in the racetrack optical waveguide 502. A third fixed-width waveguide segment 5016, a second tapered-width waveguide segment 5015 symmetrically disposed on either side of the third fixed-width waveguide segment 5016, and a fourth fixed-width waveguide segment 5014 symmetrically disposed on either side of the second tapered-width waveguide segment 5015 are disposed in the elongated waveguide 503.
The first fixed-width waveguide segment 5013 is the same length as the third fixed-width waveguide segment 5016 in this embodiment, and the second fixed-width waveguide segment 5011 is the same length as the fourth fixed-width waveguide segment 5014. The first tapered width waveguide segment 5012 decreases linearly in width and the second tapered width waveguide segment 5015 increases linearly in width with the same magnitude of decrease and increase.
In fig. 5, the output formula of the output port out 2' is expressed as:
Out2’=(k2-t2)exp(-iΦ)*In2’+2iexp(-iΦ)kt*In1’；
when In 2' =0,
k’=Out2’/In1’=2iexp(-iΦ)kt
the transmission coefficient formula of the coupling region 501 is derived as:
k’ =2iexp(-iΦ)kt
wherein: k is the coupling coefficient from In1 to Out2 In the coupling region 101 of the modulator 100, which is affected by the spacing d of the micro-ring waveguide from the strip waveguide. k ' is the coupling coefficient of In1 ' to Out2 ' In the coupling region 501, and k2+t2And = 1. i represents the phase shift pi/2 due to bypass coupling in the coupling region; phi denotes the phase, received by the first fixed-width waveguide segment 5013 and the third fixed-width waveguideThe width and length of guide segment 5016; t denotes the through coupling coefficient, i.e. the coefficient from In1 to Out 1.
The coupling coefficient of the coupling region 101 of the modulator 100 is related only to the spacing d of the micro-ring waveguide from the slab waveguide. The coupling coefficient k' of the coupling region 501 in the modulator 500 is affected by both k and Φ, i.e., indicating that the coupling coefficient of the coupling region 501 is affected by the spacing d and the width and length of the first fixed-width waveguide segment 5013 and the third fixed-width waveguide segment 5016. By designing the lengths of the first fixed-width waveguide segment 5013 and the third fixed-width waveguide segment 5016, the present application minimizes the influence of the spacing d on the coupling coefficient k' of the coupling region 501, improves the process tolerance of the modulator 500, and reduces the sensitivity of the modulator to the manufacturing process.
As shown in fig. 6, the modulator 600 is designed to include a racetrack optical waveguide and a strip waveguide 602, a first heavily doped structure 604 is designed on the outer side of the racetrack optical waveguide, a second heavily doped structure 603 is designed on the inner side of the racetrack optical waveguide, and the racetrack optical waveguide is externally connected with an electrical signal through the first heavily doped structure 604 and the second heavily doped structure 603. The runway type optical waveguide and the strip waveguide 602 are coupled through the optical coupling area 601, light beams enter the strip waveguide through the input end of the strip waveguide 602, when the light beams enter the coupling area 601, the light waves enter the runway type optical waveguide through the coupling of the strip waveguide 602, the light waves are modulated through an external input voltage signal in the runway type optical waveguide, a communication signal is loaded, and the light beams are coded into optical signals. The optical signal is transmitted to the end of the racetrack waveguide and coupled into the strip waveguide 602 through the coupling region 601, and is output out of the modulator through the output end of the strip waveguide 602.
In fig. 8, the curves 802 and 803 are respectively modeled by 3D FDTD (Finite-Difference Time-Domain) and TMM (transmission matrix method) to analyze the variation of the normalized splitting ratio of the modulator 600 at different transmission wavelengths, and it can be seen from the curves 802 and 803 that the normalized splitting ratio of the modulator 600 at the transmission wavelength ranging from 1520nn to 1580nm is not greatly affected by the wavelength variation, which means that the coupling coefficient is stable, meanwhile, the two different modeling methods of 3D FDTD and TMM are used to perform the test analysis, the curve 802 is closer to the curve 803, and the comparison shows that the modulation performance of the modulator 600 is not greatly changed in different modeling methods, and the influence of the simulation model is eliminated, it can be seen from the curve 801 that the coupling coefficient represented by the normalized splitting ratio of the modulator 100 at the wavelength ranging from 1520nm to 1580nm increases with the increase of the wavelength, it is shown that the modulation performance of the modulator 100 is greatly affected by the transmission wavelength, and the modulation performance is unstable. Further comparing the curve 801 and the curve 802, the modulator 100 and the modulator 600 both use 3D FDTD for test analysis to eliminate the influence of simulation modeling, so that it can be seen that the coupling coefficient of the modulator 600 is less influenced by the wavelength in the modulator 600 than in the modulator 100.
Fig. 7 shows another modulator optical waveguide structure designed as a circular arc waveguide 703 coupled to a strip waveguide 702 via a coupling region 701. The circular-arc waveguide 703 is provided in a portion of the coupling region 701, the width of which is gradually reduced from the center of the axis along both sides. The strip waveguide 702 is disposed at a portion in the coupling region 701, and has a width gradually increasing from the center of the axis along both sides. The relevant electrode structure is not shown in fig. 7, and it should be understood that the corresponding electrode structure needs to be designed accordingly in practical application.
Fig. 10 is a schematic diagram 1000 of structures and input/output patterns of three different modulators, where (a) shows a comparison between the modulator 100 and its input/output patterns, electrodes are disposed in the waveguide 1001 region for modulation, and in the modulation process, the wavelength is shifted by the refractive index change to form modulation. As can be seen from the spectrum 1100 in fig. 11, only the spectrum type steep modulation is efficient, but the modulation wavelength range is narrow, the requirement for wavelength accuracy is high, and the modulation bandwidth is not high. Fig. 10 (b) shows a comparison of input and output patterns of the modulator 400, the modulation is performed in the coupling region 1002, the modulation waveform 1200 is as shown in fig. 12, in the modulation process, the coupling coefficient is changed due to the change of the refractive index, the wavelength is not changed, the intensity is changed, the modulation is formed, the modulation region is small, the bandwidth is high, but the size of the modulator is large, and the pattern effect is brought.
Fig. 9 shows that the modulator 900 has an electrode disposed in the coupling region 902 for modulation, an N-type doped region 904 and a P-type doped region 905, the doped region 904 is externally connected to a voltage signal, and the doped region 905 is grounded. The modulator 900 includes a ring waveguide including a coupled waveguide segment 906 and a transmission waveguide segment 901 disposed in a coupling region 902, and a strip waveguide 903. Fig. 10 (c) is a schematic diagram of the modulator 900 and its input code pattern and output code pattern, and it can be seen from the diagram that the difference between the output code pattern and the input code pattern is small, the modulator not only has small size, but also avoids code pattern effect, the modulation bandwidth is high, and the process tolerance is large.
FIG. 13 is a cross-sectional view of the modulator 900 viewed from the light incident side, with the coupled waveguide 906 connected to the N-doped region 904, the N-doped region 904 being electrically connected to an external electrical signal via an electrode 909; the strip waveguide 903 is connected to a P-doped region 905, and the P-doped region 905 is grounded via an electrode 908. In the application, the strip waveguide 903 and the coupled waveguide section 906 are designed to be intrinsic regions, and only the N-type doped region 904 and the P-type doped region 905 are doped with carriers for connecting electricity, and the coupling region 902 forms a PIN structure. Because the coupling region 902 is small in size, the distance between the coupling waveguide segment 906 and the strip waveguide 903 is small, the doping process is difficult to control, and if the doping concentrations of the coupling waveguide segment 906 and the strip waveguide 903 are different, the refractive indexes of the coupling waveguide segment 906 and the strip waveguide 903 are different, so that the overall modulation effect is poor, therefore, the doping region needs to be optimally designed, or the PIN doping form of the application is adopted, the relative refractive indexes of the coupling waveguide segment 906 and the strip waveguide 903 are kept unchanged in the modulation process, and the influence can be avoided.
The above embodiments only exemplify preferred specific technical solutions and technical means, and do not exclude the scope of the claims of the present invention, and other alternatives to equivalent technical means for solving the technical problems should be understood as the contents of the claims of the present invention.
Claims (10)
1. A process insensitive modulator, characterized by: the waveguide comprises a closed waveguide and a strip waveguide, wherein the closed waveguide and the strip waveguide are coupled through a coupling region, and the coupling region comprises a first fixed-width waveguide section, a second fixed-width waveguide section, a third fixed-width waveguide section, a fourth fixed-width waveguide section, a first gradually-changed-width waveguide section and a second gradually-changed-width waveguide section; the first fixed-width waveguide segment, the first gradually-changed-width waveguide segments symmetrically arranged at two sides of the first fixed-width waveguide segment, and the second fixed-width waveguide segments symmetrically arranged at two sides of the first gradually-changed-width waveguide segments are arranged in the closed waveguide; the third fixed-width waveguide section, the second gradually-changed-width waveguide section symmetrically arranged at two sides of the third fixed-width waveguide section, and the fourth fixed-width waveguide section symmetrically arranged at two sides of the second gradually-changed-width waveguide section are arranged in the strip waveguide; the width of the first gradually-changed width waveguide section is gradually reduced towards the direction far away from the central axis of the first fixed width waveguide section by taking the central axis of the first fixed width waveguide section as the center; the first fixed-width waveguide segment has a width greater than the second fixed-width waveguide segment, and the first tapered-width waveguide segment has a width greater than the second fixed-width waveguide segment.
2. The process insensitive modulator of claim 1, wherein: the width of the first gradually-changing width waveguide section is linearly reduced, the width of the first fixed width waveguide section is larger than that of the third fixed width waveguide section, the width of the second gradually-changing width waveguide section is gradually increased towards the direction far away from the center axis of the third fixed width waveguide section by taking the center axis of the third fixed width waveguide section as the center, and the width of the second gradually-changing width waveguide section is linearly increased.
3. The process insensitive modulator of claim 2, wherein: the outer side of the closed waveguide, which is far away from the coupling region, is provided with a first doping region, the inner side of the closed waveguide is provided with a second doping region, the first doping region and the second doping region are externally connected with a voltage to provide a voltage signal for the closed waveguide, and the light beam transmitted in the closed waveguide realizes electro-optic modulation.
4. The process insensitive modulator of claim 1, wherein: the closed waveguide is configured as a micro-ring waveguide.
5. The process insensitive modulator of claim 1, wherein: the first fixed-width waveguide section is provided with a first current carrier region at one side far away from the coupling region, the third fixed-width waveguide section is provided with a second current carrier region at one side far away from the coupling region, the first current carrier region and the second current carrier region are externally connected with a voltage, and the voltage loads an electric signal through the coupling region to realize the modulation of the light beam signal.
6. The process insensitive modulator of claim 3, wherein: the first doping area is doped with N-type carriers, and the second doping area is doped with P-type carriers.
7. The process insensitive modulator of claim 5, wherein: the first carrier region is doped with N-type carriers, the second carrier region is doped with P-type carriers, and the closed waveguide and the strip waveguide are set as intrinsic regions.
8. The process insensitive modulator of claim 1, wherein: the spacing between the closed waveguide and the coupling region of the strip waveguide is smaller than the wavelength of transmission light.
9. The process insensitive modulator of claim 1, wherein: the closed waveguides and the strip waveguides are silicon confined in a silica cladding.
10. The process insensitive modulator of claim 1, wherein: the first fixed-width waveguide segment is the same as the third fixed-width waveguide segment in length, the first gradually-changing-width waveguide segment is the same as the second gradually-changing-width waveguide segment in length, and the second fixed-width waveguide segment is the same as the fourth fixed-width waveguide segment in length.
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| CN202111488082.5A CN113900285B (en) | 2021-12-08 | 2021-12-08 | Technology insensitive modulator |
| PCT/CN2022/087333 WO2023103250A1 (en) | 2021-12-08 | 2022-04-18 | Process-insensitive modulator |
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| CN111897146A (en) * | 2020-09-15 | 2020-11-06 | 上海航天科工电器研究院有限公司 | Photonic crystal micro-ring modulator chip based on lithium niobate thin film |
| CN112379539A (en) * | 2020-11-18 | 2021-02-19 | 联合微电子中心有限责任公司 | Silicon-based micro-ring modulator and modulation method thereof |
| CN113900285B (en) * | 2021-12-08 | 2022-04-05 | 杭州芯耘光电科技有限公司 | Technology insensitive modulator |
-
2021
- 2021-12-08 CN CN202111488082.5A patent/CN113900285B/en active Active
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2022
- 2022-04-18 WO PCT/CN2022/087333 patent/WO2023103250A1/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101741014A (en) * | 2009-12-16 | 2010-06-16 | 中国科学院半导体研究所 | Microcavity laser of lateral coupling output waveguide |
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| WO2023103250A1 (en) | 2023-06-15 |
| CN113900285A (en) | 2022-01-07 |
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