CN110581189A - Monolithic integrated segmented waveguide photodetector with wavelength selective function - Google Patents
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
Abstract
There are two converters in a monolithic semiconductor waveguide photodetector. The light absorbing region of each converter is composed of multiple quantum well layers or multiple quantum dot layers. The band gap in each converter is independently adjusted by intermixing, with the respective absorption edges differing from the other converter. The semiconductor waveguide photodetector based on a dual converter or the like proposed herein can be used to measure the shift of the wavelength of incident light.
Description
Technical Field
The present invention relates to a semiconductor optoelectronic device capable of converting an optical signal into an electrical signal, and more particularly, to a waveguide photodetector which can be used in the fields of optical sensors, optical data processing, optical communications, and the like.
Background
One transmitting-receiving semiconductor diode device for directly coupling light to an optical signal transmission device is disclosed in U.S. patent 4773074 "dual mode laser/detector diode for fiber optic transmission line". It is a unity of double heterojunction diodes and waveguide photodiodes that can be selectively switched between transmit and receive modes. At least part of the light is confined to the active regions of the heterojunction diode and the waveguide diode.
A monolithically integrated waveguide-photodiode combination for an optical communication system is disclosed in us patent 4835575 "monolithically integrated waveguide-photodiode combination", which comprises a substrate of an n-type carrier conducting semiconductor material, a strip of n-type conducting absorption layer formed on the substrate surface, and a waveguide layer formed thereon. The photodiode is formed by diffusing the p-type doping into the n-type waveguide absorption layer. The anode of the photodiode is connected to a p-type conductive region, and the cathode of the diode is connected to a free region of a carrier substrate. And covering a film on the upper surface of the waveguide layer.
One of us patent 5998851 "optical waveguide type photodiode and method for manufacturing the same" discloses an optical waveguide type photodiode which is a plurality of semiconductor layers formed one after another on a semiconductor substrate, including an optical absorption layer sandwiched between a pair of optical confinement layers for guiding incident light in parallel with the semiconductor layers, wherein the amount of light absorption by an optical waveguide region per unit length formed by the optical absorption layer is substantially constant. Specifically, the optical confinement factor Γ (x) of the optical waveguide region is set to increase the propagation distance x of light. In the device with the structure, the thickness d (x) of the light absorption layer increases along with the increase of the light transmission distance x. Further, the optical absorption layer can be prepared by using a pair of selective area-grown masks, which have patterns whose masking widths gradually decrease/increase in the light guiding direction, and thus, one can easily manufacture a photodiode having the above-described device structure.
U.S. patent 6661960, "semiconductor waveguide photodetector," discloses a semiconductor waveguide photodetector with high reception efficiency having single-mode light transmitted as an incident optical signal. The semiconductor waveguide photodetector includes a1 × 1 multimode interference (MMI) optical waveguide region and two single-mode waveguide regions each having one end connected to the multimode region. The length of the multimode waveguide region is about 100 μm and the length of the single mode waveguide region is about 10 μm. The width of the multimode waveguide region was 6 μm and the width of the single mode waveguide region was 1.5 μm. The semiconductor waveguide photodetector detects and filters incident light in the same material in a multimode region.
Us patent 7310469 "waveguide PIN photodiode with gradient index profile centered on an optical absorption layer" discloses a waveguide PIN photodiode, wherein the waveguide PIN photodiode comprises a lower light guiding layer, a light absorbing layer, an upper light guiding layer, and a cladding layer. The lower light guide is formed on the substrate, and the light absorbing layer is formed on the lower light guide layer. An upper light guide layer is formed on the light absorbing layer, and a clad layer is formed on the upper light guide layer. The lower light guide layer, the light absorbing layer and the upper light guide layer constitute a core layer, which is an optical waveguide, and the gradient index distribution is formed symmetrically in the depth direction with the light absorbing layer having the highest refractive index as the center.
U.S. Pat. No. 7675130, "waveguide photodetector", discloses a waveguide photodetector that detects light incident on a light-detecting end face, including: the semiconductor device includes a substrate and a layer stack structure on the substrate, including a first conductive type semiconductor layer, an undoped semiconductor layer and a second conductive type semiconductor layer. The undoped semiconductor layer includes two or more undoped light absorbing layers and undoped non-light absorbing layers. A non-light absorbing layer is disposed between adjacent undoped light absorbing layers. The band gap wavelength of the non-light absorbing layer is shorter than the wavelength of the detected incident light.
U.S. patent 9477040 entitled waveguide photodiode using penetrating absorber quantum well intermixing and method thereof discloses a high speed, high saturation power detector (e.g., photodiode) compatible with relatively simple monolithic integration processes. In a particular embodiment, the photodiode includes an intrinsic bulk absorption region grown over a main waveguide core that includes a plurality of Quantum Wells (QWs) that serve as the active region of the phase modulator. The present invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithically simplified process.
Us patent 10134937 "semiconductor photodiode" is a semiconductor photodiode comprising a light absorbing layer; light can be coupled instantaneously into the light absorbing layer through the waveguide, and a doped contact layer is disposed between the light absorbing layer and the optical waveguide. The optical waveguide has at least in part a doping that creates a diffusion barrier to counteract diffusion of dopants of the contact layer into the optical waveguide.
Us patent 20090147352a1 "electro-absorption modulator with wide optical bandwidth" discloses a method of modulating optical signal transmission by a waveguide structure having a plurality of individually addressable sections, each section being composed of a semiconductor medium having a predetermined band gap and electrodes for biasing the medium. The band gaps in different parts of the device are preferably created by quantum well intermixing. This will ensure that the optical modes in the different waveguide sections are perfectly aligned at the interface between the sections, and that the optical reflection at the interface is very small and negligible.
U.S. patent 6989286 "method of fabricating an optical device and related improvements" discloses a method of fabricating an optical device, such as a semiconductor optoelectronic device, e.g., a laser diode, an optical modulator, an optical amplifier, an optical switch, etc. An optical device is fabricated according to the method provided by the present invention, a device body portion comprising a Quantum Well Intermixing (QWI) structure, the method comprising depositing a dielectric layer thereon prior to the step of plasma etching at least part of a surface of said device body portion so as to introduce at least structural defects into a portion of the device body portion adjacent the dielectric layer. Structural defects actually include "point" defects. QWI changes the band gap of the growth structure by interdiffusion of the elements of the quantum well and the associated barriers to produce an alloy of constituent components. The band gap of the alloy is larger than that of the grown QW.
The disclosed waveguide photodetector has no wavelength selectivity on the scale of a few tenths of nanometers. In other words, if the wavelengths of the detected lights are shifted by 5 to 50nm, their photocurrents are very weakly changed.
Disclosure of Invention
The object of the invention is a monolithically integrated segmented waveguide photodetector with wavelength selective functionality. This can be used for various applications, such as monitoring overheating of high power semiconductor lasers by detecting temperature-induced long wavelength shifts of lasing wavelength, or monitoring the transition from ground state to excited state lasing in quantum dot lasers.
A semiconductor epitaxial wafer 10 (fig. 1) for a waveguide photodetector includes a highly doped contact layer 11, a doped top wide band-gap cladding layer 12, a waveguide layer 13, an absorbing medium 14 contained within the waveguide layer 13, and a doped bottom wide band-gap cladding layer 15. The waveguide photodetector is formed by an epitaxial method on a semiconductor substrate. The absorbing medium 14 represents several quantum well layers or several quantum dot layers.
Selective mixing of the epitaxial wafer 10 is achieved by: the energy band gap of the energy band gap 21 of the absorption layer 14 in the mixed rod region 22 is increased by 10meV or more compared to the energy band gap 23 of the untreated (non-mixed) rod region 24 (fig. 2).
Waveguide photodetectors are fabricated using standard post-growth techniques, including optical or electron beam lithography, chemical or dry etching, and deposition of top and bottom metal contacts. A schematic diagram of the waveguide photodetector 30 is shown in fig. 3. The bottom contact is continuous while the top contact is made by electrically isolating 31 from the mixed absorbing regions 141 and 32 and the non-mixed absorbing region 142. 31 are connected to a first input 35 of a multi-channel measuring instrument 36 (voltmeter, oscilloscope, integrated circuit) and to separate lines 37 (wires, bus bars, etc.). 32 are individually connected to a second input 38 of a multi-channel measurement instrument 36 (voltmeter, oscilloscope, integrated circuit) by individual wires 39 (wires, bus bars, etc.). The bottom contact serves as a ground.
The hybrid 31 generates a photocurrent if the photon energy of the light incident on the waveguide photodetector is greater than the bandgap 21 of the hybrid absorption section in this section. In this case, if the mixing section is long enough to absorb a large portion of the incident light, the non-mixing section produces negligible photocurrent. For example, if the mixing section 31 exceeds 1/α three times, α is the optical absorption coefficient, and more than 97% of the light is absorbed. The non-hybrid absorption section 32 generates a photocurrent when photon energy of light incident on the waveguide photodetector is less than the energy band gap 21 of the 31 hybrid absorption section and greater than the energy band gap 23 of the 32 non-hybrid absorption section. 32 should be long enough to absorb a large portion of the incident signal and produce a sufficient photocurrent.
The two-segment waveguide photodetector proposed herein has the advantage over the prior art of being wavelength sensitive and can be used to detect changes in the incident wavelength. In a high-power semiconductor laser, the laser lasing wavelength shifts in the long-wavelength direction as the injection current increases due to overheating of the device. Excessive overheating can lead to equipment degradation and failure. The proposed two-segment waveguide photodetector can monitor overheating by detecting the laser wavelength red shift and provide feedback to the laser driver. In a quantum dot laser, as the injection current increases, undesirable lasing from a ground state to an excited state occurs. The proposed two-segment waveguide photodetector can also be used to detect such abrupt changes in lasing.
Drawings
Fig. 1 is a schematic diagram of an epitaxial wafer of a waveguide photodetector.
Fig. 2 is a schematic diagram of selective mixing and the corresponding bandgap diagram.
Fig. 3 is a schematic diagram of a waveguide photodetector.
Fig. 4 is a schematic illustration of an epitaxial heterostructure in a preferred embodiment.
FIG. 5 electroluminescence spectra of the growth sample and the "PECVD silicon dioxide" and the "sputtered" sample after annealing at 650 ℃.
FIG. 6 shows the photoluminescence peak maxima for "sputtered silicon dioxide" and "PECVD" samples as a function of annealing temperature.
FIG. 7 in a good example, has a photocurrent spectrum of an absorption region waveguide photodetector representing InAs/InGaAs/GaAs quantum dots.
Fig. 8 in a good example, the spectrum is related to the photocurrent of the mixed and non-mixed portions of a two-segment waveguide photodetector.
Detailed Description
The present invention will be described in detail below with reference to embodiments and drawings, it being noted that the described embodiments are only intended to facilitate the understanding of the present invention, and do not limit it in any way.
In one example, an epitaxial heterostructure for waveguide photodetectors has an absorption medium containing 5 layers of InAs/InGaAs/GaAs quantum dots (FIG. 4). The heterojunction 40 grown on a GaAs: n substrate is layered by the following order: 1.5 μm doped bottom Al0.3Ga0.7Si cap layer 41, 300nm undoped waveguide layer 42, the absorbing medium being incorporated inside the waveguide layer and comprising 5 layers of InAs/InGaAs/GaAs quantum dots 43, 1.5 μm doped top Al0.3Ga0.7An As: C cap layer 44 and a 400nm highly doped GaAs: C contact layer 45. In this example, each quantum dot layer consisted of InAs46 deposited as a 2.75 monolayer (i.e.0.825nm) and In capped at 5nm0.15Ga0.85As 47 is formed. The quantum dot layers are separated by 38nm GaAs layers 42.
We have applied a media cover based technique. The intermixing is achieved by sputtering quantum dot intermixing enhancement caps in some regions and quantum dot intermixing suppression caps in other regions, followed by a high temperature anneal cycle. The hybrid technology has been successfully applied to III-V Quantum Well (QW) and Quantum Dot (QD) structures based on GaAs and InP material systems, using sputtered silicon dioxide as the hybrid lid.
Plasma Enhanced Chemical Vapor Deposition (PECVD) is one commonly used method for depositing silicon dioxide on III-Vs, but sputtering can be used as an alternative method. By adjusting the sputtering conditions, point defects can be generated on the semiconductor surface during sputtering. These point defects diffuse into the material during the subsequent annealing process. In addition, point defects generated during sputtering reduce the activation energy of diffusion of group III atoms into the sputtered silicon dioxide, allowing group III vacancies to be generated at lower annealing temperatures than PECVD silicon dioxide. To enable mixing in selected areas and prevent desorption of As, a silicon dioxide cap is deposited by PECVD in areas where band gap shifting is not required. QDs can be selectively mixed with sputtered SiO2Cap and PECVD SiO2Combinations of (a) and (b).
The top stripe region 24 of the epitaxial wafer is covered by a PECVD silicon dioxide cap and the remaining stripe region 22 is covered by a sputtered silicon dioxide cap (see fig. 2). The annealing temperature range is 500-850 ℃, and the temperature increment is 50 ℃. The exposure time was 1min, and photoluminescence was selectively measured in the 24, 22 stripe regions after treatment by microbeam photoluminescence. An example of a micro photoluminescence spectrum measured from PECVD silica cap coverage and sputtered silica cap coverage is given (figure 5) with an annealing temperature of 650 ℃. The annealing experiments were performed over a wide annealing temperature range of 500 deg.C to 850 deg.C. The photoluminescence wavelength maximum is plotted against the annealing temperature in figure 6. The relative emission wavelength shifts of the "PECVD" and "sputtered" samples were significant. In the sample annealed at 700 ℃, the largest one of 130nm was obtained. At the same time, higher annealing temperatures reduce the photoluminescence intensity. The optimum wavelength shift amount is selected according to the detection wavelength range of the waveguide photodetector. Two-section waveguide photoelectric detector is made, and annealing temperature is selected to be 600 ℃. At this temperature, the PECVD silica cap covered striated regions did not mix, while the sputtered silica cap covered striated regions produced a wavelength shift of up to 30nm due to mixing. Fig. 7 is a photo-current spectrum of a reference single-segment waveguide photodetector fabricated from the epitaxial structure shown in fig. 4.
Fig. 8 shows the performance of an excellent example of the two-segment waveguide photodetector shown in fig. 3. For the region with the optical wavelength of 1220-1260nm, the photocurrent of the mixed region is significantly higher than that of the non-mixed region. When the wavelength exceeds 1270nm, the photocurrent of the mixed portion rapidly decreases, while the photocurrent of the non-mixed portion increases. Thus, for the region of light wavelengths of about 1220-.
It is to be understood by those skilled in the art that the present examples are described herein merely as illustrative of the application of the principles of the invention. Other semiconductor materials may be used to implement the methods disclosed herein. Reference herein to details of the described examples is not intended to limit the scope of the claims, which themselves recite those features regarded as essential to the invention. Reference throughout this specification to "one instance" or "an instance" means that a particular feature, structure, or characteristic described in connection with the instance is included in at least one instance of the present invention. Thus, the appearances of the phrases "in one example" or "in an example" in various places throughout this specification are not necessarily all referring to the same example.
Claims (3)
1. A monolithic waveguide photodetector based on double transducers consists of an n-type AlGaAs cladding layer, an undoped GaAs waveguide layer, a p-type AlGaAs cladding layer and an absorption medium in the waveguide layer; wherein the absorption medium represents a plurality of narrow band gap InGaAs quantum wells; wherein the bandgap of the absorbing medium in the first converter is smaller than the bandgap of the absorbing medium in the second converter by more than 10 meV; wherein the first and second transducers of the waveguide photodetector are insulated from each other.
2. The dual-translator based monolithic waveguide photodetector of claim 1; wherein the bandgap of the absorption medium in the first converter is reduced by mixing.
3. The dual-transducer based monolithic waveguide photodetector of claim 2, wherein the bandgap of the absorbing medium in the first transducer is reduced by mixing.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952401A (en) * | 2020-08-26 | 2020-11-17 | 合肥工业大学 | Color detector based on palladium ditelluride film/n-type ultrathin silicon van der Waals heterojunction and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6407439B1 (en) * | 1999-08-19 | 2002-06-18 | Epitaxial Technologies, Llc | Programmable multi-wavelength detector array |
| CN101055882A (en) * | 2007-05-14 | 2007-10-17 | 中国科学院上海技术物理研究所 | GaAs/AlGaAs/InGaAs dual color focal plane detector |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6407439B1 (en) * | 1999-08-19 | 2002-06-18 | Epitaxial Technologies, Llc | Programmable multi-wavelength detector array |
| CN101055882A (en) * | 2007-05-14 | 2007-10-17 | 中国科学院上海技术物理研究所 | GaAs/AlGaAs/InGaAs dual color focal plane detector |
Non-Patent Citations (1)
| Title |
|---|
| S. A. MINTAIROV等: "Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converter", 《SEMICONDUCTORS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952401A (en) * | 2020-08-26 | 2020-11-17 | 合肥工业大学 | Color detector based on palladium ditelluride film/n-type ultrathin silicon van der Waals heterojunction and preparation method thereof |
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Application publication date: 20191217 |