CN102338940B - Electric absorption modulator based on ring cavity - Google Patents
Electric absorption modulator based on ring cavity Download PDFInfo
- Publication number
- CN102338940B CN102338940B CN201110256183.XA CN201110256183A CN102338940B CN 102338940 B CN102338940 B CN 102338940B CN 201110256183 A CN201110256183 A CN 201110256183A CN 102338940 B CN102338940 B CN 102338940B
- Authority
- CN
- China
- Prior art keywords
- waveguide
- electric absorption
- input
- forthright
- ring cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses an electric absorption modulator based on a ring cavity, relating to the technical field of photoelectric integrated devices. The electric absorption modulator comprises an electric absorption waveguide and a linear input/output waveguide which are coupled mutually, wherein the electric absorption waveguide is in a ring cavity structure. The invention has the advantages that: (1) the coupling action between the linear input/output waveguide and the electric absorption waveguide based on the ring cavity is utilized, linear transmission light generates interference with coupled output light propagating around the ring cavity different times and the ring cavity has a resonance characteristic to ensure that the transmission light is more sensitive to loss in the cavity than a common electric absorption modulator, thus, the modulation efficiency is increased; and (2) after the electric absorption waveguide in the electric absorption modulator is made into the ring cavity structure, the size of a device can be reduced by one order of magnitude, the capacitance parameter of an integrated circuit is lowered, and the electric absorption modulator has high-frequency modulation potential.
Description
Technical field
The present invention relates to integrated opto-electronics device technical field, particularly a kind of electroabsorption modulator based on ring cavity.
Background technology
Modulator is one of core devices in digital optical communication system, Radio of Fiber Technology (RoF) and on-chip interconnect.These application all require modulator to have the characteristics such as high modulate efficiency, low driving voltage, low-power consumption.Along with the development of photoelectron integrated level, require device volume less simultaneously, more easy of integration.In digital communi-cations link, low driving voltage modulator means low driving voltage, low driving circuit energy consumption, and be easy to CMOS integrated circuit compatible.In analog link, the modulation efficiency of modulator is the key parameter of determined link performance, and low driving voltage modulator can bring the advantages such as high link gain, low high s/n ratio, great dynamic range.Therefore, low driving voltage modulator is the focus of research always.
For the external modulator structure of making, be mainly divided into two classes: interfere type and electric absorption type, the Mach-Zehdner modulator of take respectively based on mqw material electrooptical effect is representative with utilizing Multiple Quantum Well (MQW) electric absorption (EA) modulator of quantum confinement Stark effect.Although, warble adjustable characteristic insensitive to operation wavelength that performance of interferometric modulators has, exists and makes the shortcomings such as difficult, device size is larger.And electroabsorption modulator is because have, device size is little, controlled, the advantage such as manufacture craft is simple of warbling, and has been widely used, but owing to being limited to the factors such as insertion loss and bandwidth, has reduced driving voltage and have difficulties.
At present, what optical fiber communication was the most frequently used is the EA modulator based on MQW, and its principle of work is quantum limit Stark effect (QCSE).Due to the restriction of quantum well, the absorption edge of quantum-well materials has very precipitous exciton absorption peak.When apply perpendicular to quantum well direction extra electric field time, quantum well can be with run-off the straight, exciton absorption peak moves to long wavelength's direction, absorption edge slows down simultaneously, QCSE effect that Here it is.If input light wavelength is selected in to the long wave strong point at EA modulator quantum-well materials exciton absorption peak, do not adding under the condition of outer bias voltage, EA modulator absorbs little, and Output optical power is strong.Under applying bias effect, the red shift of EA modulator absorption peak, increases the absorption of light, and Output optical power dies down.In order to reach certain extinction ratio, device length is generally greater than 100 μ m.Can reduce driving voltage by increasing absorption length, but can increase the reduction of insertion loss and modulation band-width simultaneously.
In the last few years, mode of resonance modulator was because the advantages such as its highly sensitive and volume is little are paid attention to widely, and ring cavity modulator is a comparatively typical class in resonator cavity modulator.As shown in Figure 1, wherein ring cavity structure and the waveguide of input and output forthright are coupled with certain coupling efficiency the structure of ring cavity modulator.During work, input light is inputted by forthright waveguide, and forthright sees through light and produces and interfere from the coupling output light of propagating different number of times around chamber, causes the output light of forthright waveguide to change with the light path in chamber and loss.At present, ring cavity being applied to modulator is all to utilize the refractive index changing in chamber to change the principle through light.The variation of refractive index generally realizes by plasma effect or electrooptical effect.When wavelength is during in resonance place, transmission coefficient changes rapidly with the change of propagation coefficient, thereby can reach the object that reduces driving voltage.But the monolithic integrated opto-electronic device also ring cavity not being combined with EA modulator at present.Compare with traditional forthright EA modulator, ring cavity is applied to EA modulator and there is the advantage that reduces equivalent half-wave voltage and reduce device volume.
Summary of the invention
(1) technical matters that will solve
The technical problem to be solved in the present invention is: how to improve the modulation efficiency of electroabsorption modulator, and reduce size and the lumped circuit capacitance parameter of electroabsorption modulator.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of electroabsorption modulator based on ring cavity, described electroabsorption modulator comprises: the electric absorption waveguide intercoupling and forthright input and output waveguide, described electric absorption waveguide is ring cavity structure.
Preferably, the epitaxial structure of described electric absorption waveguide comprise the under-clad layer of epitaxial growth successively on N-type substrate, lower waveguide layer, multiple quantum well active layer, on ducting layer, top covering and ohmic contact layer, described ohmic contact layer connects P electrode, and described N-type substrate connects N electrode.
Preferably, described forthright input and output waveguide is identical with the epitaxial structure of described electric absorption waveguide.
Preferably, described micro-ring electric absorption partly increases the thickness of described multiple quantum well active layer by the mode of selective area growth, makes the more described forthright input and output of wavelength of fluorescence waveguide red shift, to reduce the loss of forthright input and output waveguide.
Preferably, the span of the light intensity coupling coefficient between described electric absorption waveguide and forthright input and output waveguide is 0.01～0.8.
Preferably, described ring cavity structure is circular rings.
Preferably, one section of described circular rings is optical amplifying section, and at described optical amplifying section two ends, electricity isolated region is set.
Preferably, described ring cavity structure is comprised of straight wave guide section and fan-shaped waveguide section.
Preferably, described electric absorption waveguide and forthright input and output waveguide all adopt ridge waveguide structure.
(3) beneficial effect
Advantage of the present invention is: 1) utilized the coupling of forthright input and output waveguide and the electric absorption waveguide based on ring cavity, because forthright sees through light, produce and interfere from the coupling output light of propagating different number of times around chamber, resonance characteristic due to ring cavity, make to see through light the loss in chamber is compared to general electroabsorption modulator sensitivity, thereby improve modulation efficiency; 2) the electric absorption waveguide in electroabsorption modulator is made after ring cavity structure, device size can reduce by an order of magnitude, has reduced lumped circuit capacitance parameter, has the potential of high frequency modulated.
Accompanying drawing explanation
Fig. 1 is according to the epitaxial structure schematic diagram of electric absorption waveguide in the electroabsorption modulator based on ring cavity of one embodiment of the present invention;
Fig. 2 is according to the structural representation of the electroabsorption modulator based on ring cavity of the first embodiment of the present invention;
Fig. 3 is according to the structural representation of the electroabsorption modulator based on ring cavity of the second embodiment of the present invention;
Fig. 4 is according to the structural representation of the electroabsorption modulator based on ring cavity of the third embodiment of the present invention.
Wherein, 1:N electrode; 2:N type substrate; 3: under-clad layer; 4: lower waveguide layer; 5: multiple quantum well active layer; 6: upper ducting layer; 7: top covering; 8: ohmic contact layer; 9:P electrode; 10: forthright input and output waveguide; 11: electric absorption waveguide; 12: optical amplifying section; 13: electricity isolated region; 14: straight wave guide section; 15: fan-shaped waveguide section.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for illustrating the present invention, but are not used for limiting the scope of the invention.
Electroabsorption modulator based on ring cavity of the present invention comprises: the electric absorption waveguide 11 intercoupling and forthright input and output waveguide 10, described electric absorption waveguide 11 is ring cavity structure.
With reference to Fig. 1, the epitaxial structure of the electric absorption waveguide in described electroabsorption modulator comprise the under-clad layer 3 of epitaxial growth successively on N-type substrate 2, lower waveguide layer 4, multiple quantum well active layer 5, on ducting layer 6, top covering 7 and ohmic contact layer 8, described ohmic contact layer 8 connects P electrode 9, described N-type substrate 2 connects N electrode 1, in present embodiment, the growing method of described electric absorption waveguide is: first adopt gas phase epitaxy of metal organic compound (MOCVD) N-type InP under-clad layer 3 (thickness 160nm, the doping content approximately 1 * 10 of growing on the N-type substrate 2 of InP
18cm
-3), non-doping Lattice Matching InGaAsP lower waveguide layer 4 (thickness 80nm, light wavelength of fluorescence 1150nm).Then the multiple quantum well active layer 5 of growing, quantum well structure is: 10 pairs of quantum wells: the wide 7nm of trap, 0.4% compressive strain, light wavelength of fluorescence 1510nm, build wide 9nm, lattice matched materials, light wavelength of fluorescence 1150nm, the upper ducting layer 6 (thickness 100nm, light wavelength of fluorescence 1150nm) of the non-doping type Lattice Matching of regrowth InGaAsP.Continuation is carried out extension with MOCVD, and (thickness 1700nm, doping content is from 3 * 10 for the InP top covering 7 of growing P-type successively
17cm
-3be gradient to is 1 * 10
18cm
-3) and InGaAs ohmic contact layer 8 (thickness 100nm, the doping content approximately 1 * 10 of P type
19cm
-3).
The span of the light intensity coupling coefficient between described electric absorption waveguide 11 and forthright input and output waveguide 10 is 0.01～0.8.
Embodiment 1
With reference to Fig. 2, described electric absorption waveguide 11 in the electroabsorption modulator of the present embodiment is annular, described forthright input and output waveguide 10 adopts epitaxial structure and the growing method identical with electric absorption waveguide 11, comprise the under-clad layer 3 of epitaxial growth successively on N-type substrate 2, lower waveguide layer 4, multiple quantum well active layer 5, upper ducting layer 6, top covering 7 and ohmic contact layer 8, the operation wavelength of described electroabsorption modulator is 1550nm, the radius of described electric absorption waveguide 11 is 6.2 μ m, described electric absorption waveguide 11 and forthright input and output waveguide 10 all adopt high ridge waveguide structure, ridge is wide is 2 μ m, dark approximately 4 μ m, between described electric absorption waveguide 11 and forthright input and output waveguide 10, minimum interval is 0.1 μ m.Method by plasma-reinforced chemical vapor deposition (PECVD) is respectively at the both sides SiO of described electric absorption waveguide 11 and forthright input and output waveguide 10
2insulation course covers or fills and leads up, and then erodes the SiO on described electric absorption waveguide 11 crestal culminations
2, by the method for sputter, make P electrode 9 and N electrode 1.
The characteristic parameter of the present embodiment is:
Light field coupling coefficient 0.6, coupling loss approximately 5%, ring cavity insertion loss 5%, is operated in resonance place, realizes 10dB extinction ratio driving voltage 0.17V, and the about 0.2V of equivalent half-wave voltage is 1/5 left and right of forthright equal length EAM half-wave voltage.
With reference to Fig. 3, the structure of the electroabsorption modulator of the present embodiment and embodiment 1 is basic identical, difference is, one section of described circular rings is light amplification (SOA) section 12, and electricity isolated region 13 is set at described optical amplifying section two ends, and the radius of described electric absorption waveguide 11 is 7 μ m, girth is 44 μ m, wherein, the length of SOA section 12 is 5 μ m, by proton, is injected and is formed electricity isolated region 13.At SOA section 12 Injection Currents, to reduce to encircle interior insertion loss.
The characteristic parameter of the present embodiment is:
Light field coupling coefficient 0.6, coupling loss approximately 5%, ring cavity insertion loss 0.5%, is operated in resonance place, realizes 10dB extinction ratio driving voltage 0.15V, and equivalent half-wave voltage is about 0.16V, is 1/6 left and right of forthright equal length EAM half-wave voltage.
With reference to Fig. 4, the structure of the electroabsorption modulator of the present embodiment and embodiment 1 is basic identical, difference is, described ring cavity structure is comprised of straight wave guide section 14 and fan-shaped waveguide section 15, in the present embodiment, preferred described fan-shaped waveguide section 15 is semicircle annular, and wherein the length of straight wave guide section 14 is 2.5 μ m, and the radius of fan-shaped waveguide section 15 is 2.5 μ m.
The characteristic parameter of the present embodiment is:
Light field coupling coefficient 0.6, coupling loss approximately 3%, ring cavity insertion loss 3%, is operated in resonance place, realizes 10dB extinction ratio driving voltage 0.16V, the about 0.18V of equivalent half-wave voltage.
The structure of the electroabsorption modulator of the present embodiment and embodiment 1 is basic identical, difference is, described forthright input and output waveguide adopts different epitaxial growth methods from described ring cavity structure, described forthright input and output waveguide adopts selective area growth (SAG), is: the SiO that first adopts gas phase epitaxy of metal organic compound (MOCVD) about 0.2um of grow thick on the N-type substrate 2 of InP with the difference of embodiment 1 growth pattern
2.Then grow successively N-type InP under-clad layer 3, non-doping Lattice Matching InGaAsP lower waveguide layer 4.Then the multiple quantum well active layer 5 of growing, quantum well structure is: 10 pairs of quantum wells, lattice matched materials, the upper ducting layer 6 of the non-doping type Lattice Matching of regrowth InGaAsP.Continuation is carried out extension with MOCVD, successively the InP top covering 7 of growing P-type and the InGaAs ohmic contact layer 8 of P type.Wherein the multiple quantum well layer wavelength of fluorescence of ring cavity structure is 1510nm, and compared with forthright input and output wave guide fluorescence wavelength 1480nm red shift 30nm, input light operation wavelength is 1550nm.Because described forthright input and output waveguide adopts selective area growth, therefore, the wavelength of fluorescence of described forthright input and output waveguide departs from large compared with embodiment 1 of operation wavelength, so the loss of forthright input and output waveguide reduces.
The characteristic parameter of the present embodiment is:
Light field coupling coefficient 0.6, coupling loss approximately 5%, ring cavity insertion loss 5%, is operated in resonance place, realizes 10dB extinction ratio driving voltage 0.17V, and the about 0.2V of equivalent half-wave voltage is 1/5 left and right of forthright equal length EAM half-wave voltage.
Principle of work of the present invention is: light is from one end input of described forthright input and output waveguide, while transmitting in described forthright input and output waveguide, a part is directly transferred to output terminal, part light is because evanescent field coupling between waveguide is coupled in electric absorption waveguide, light often all can have part optically-coupled to return described forthright input and output waveguide output in described electric absorption waveguide around one week, around N, after week, be coupled to the light of described forthright input and output waveguide and directly see through and export the interference of light around the inferior coupling of 1-(N-1), the amplitude of output light can represent E
outfor:
Wherein, β is waveguide-based mode propagation constant, L is that the chamber of described electric absorption waveguide is long, α is that light falls coefficient (comprising the various loss factors except coupling) around declining of one week field intensity of described electric absorption waveguide, t is the transmission coefficient of described forthright input and output waveguide, and κ is coupling crossroad coupling coefficient.By (1) formula, can be found out, when there is critical coupling, i.e. β L=2n π (n is integer), during t=α, output light amplitude is 0.Transmission coefficient is:
Can find out near resonance place (β L=2n π) α
2at 1-t
2while changing in scope, output coefficient changes compares α
2change greatly, therefore by changing electric absorption reversed bias voltage, change material absorption coefficient and then change ring cavity internal loss, make to see through light and change, and change the loss α causing compared with the electric absorption of equal length forthright
2therefore can realize the rate of change that more traditional electroabsorption modulator is larger, thereby realize high modulate efficiency, low half-wave voltage greatly.
Input optical wavelength meets, the chamber length of described electric absorption waveguide divided by the business of optical wavelength in the scope of a natural number+(0.05～0.05).
The single-revolution light intensity absorptivity that regulates described electric absorption waveguide by controlling electric signal, makes in its 0%～110% scope that reaches the light intensity coupling coefficient between described electric absorption waveguide and forthright input and output waveguide.
Above embodiment is only for illustrating the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (9)
1. the electroabsorption modulator based on ring cavity, is characterized in that, described electroabsorption modulator comprises: the electric absorption waveguide intercoupling and forthright input and output waveguide, and described electric absorption waveguide is ring cavity structure,
The principle of work of described electroabsorption modulator is: light is from one end input of described forthright input and output waveguide, while transmitting in described forthright input and output waveguide, a part is directly transferred to output terminal, part light is because evanescent field coupling between waveguide is coupled in electric absorption waveguide, light often all can have part optically-coupled to return described forthright input and output waveguide output in described electric absorption waveguide around one week, by changing the reverse biased of described electric absorption waveguide, change material absorption coefficient and then change ring cavity internal loss, making to see through light and change.
2. electroabsorption modulator as claimed in claim 1, it is characterized in that, the epitaxial structure of described electric absorption waveguide comprise the under-clad layer of epitaxial growth successively on N-type substrate, lower waveguide layer, multiple quantum well active layer, on ducting layer, top covering and ohmic contact layer, described ohmic contact layer connects P electrode, and described N-type substrate connects N electrode.
3. electroabsorption modulator as claimed in claim 1 or 2, is characterized in that, described forthright input and output waveguide is identical with the epitaxial structure of described electric absorption waveguide.
4. electroabsorption modulator as claimed in claim 3, it is characterized in that, described forthright input and output waveguide increases the thickness of described multiple quantum well active layer by the mode of selective area growth, make the more described forthright input and output of described multiple quantum well active layer wavelength of fluorescence waveguide red shift, to reduce the loss of forthright input and output waveguide.
5. electroabsorption modulator as claimed in claim 1 or 2, is characterized in that, the span of the light intensity coupling coefficient between described electric absorption waveguide and forthright input and output waveguide is 0.01～0.8.
6. electroabsorption modulator as claimed in claim 1 or 2, is characterized in that, described ring cavity structure is circular rings.
7. electroabsorption modulator as claimed in claim 6, is characterized in that, one section of described circular rings is optical amplifying section, and at described optical amplifying section two ends, electricity isolated region is set.
8. electroabsorption modulator as claimed in claim 1 or 2, is characterized in that, described ring cavity structure is comprised of straight wave guide section and fan-shaped waveguide section.
9. electroabsorption modulator as claimed in claim 1 or 2, is characterized in that, described electric absorption waveguide and forthright input and output waveguide all adopt ridge waveguide structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110256183.XA CN102338940B (en) | 2011-08-31 | 2011-08-31 | Electric absorption modulator based on ring cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110256183.XA CN102338940B (en) | 2011-08-31 | 2011-08-31 | Electric absorption modulator based on ring cavity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102338940A CN102338940A (en) | 2012-02-01 |
| CN102338940B true CN102338940B (en) | 2014-01-29 |
Family
ID=45514757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110256183.XA Active CN102338940B (en) | 2011-08-31 | 2011-08-31 | Electric absorption modulator based on ring cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102338940B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013145231A1 (en) * | 2012-03-29 | 2013-10-03 | 富士通株式会社 | Optical semiconductor element and control method for optical semiconductor element |
| CN105424220B (en) * | 2016-01-25 | 2018-03-16 | 哈尔滨工业大学 | A kind of temperature sensor based on surface phasmon |
| GB2572641B (en) * | 2018-04-06 | 2021-06-02 | Rockley Photonics Ltd | Optoelectronic device and array thereof |
| CN108563041B (en) * | 2018-04-24 | 2021-07-23 | 清华大学 | Light emitting device for generating photon orbital angular momentum signals |
| CN114355507B (en) * | 2022-01-25 | 2023-12-05 | 吉林大学 | Micro-ring resonator based on inverted ridge type silicon dioxide/polymer mixed waveguide and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269594A (en) * | 1999-03-15 | 2000-09-29 | Nec Corp | Integrated mode-locked semiconductor laser |
| CN101939689A (en) * | 2007-09-10 | 2011-01-05 | 集成光子学中心有限公司 | Electroabsorption modulators with a weakly guided optical waveguide mode |
| CN102055133A (en) * | 2009-11-04 | 2011-05-11 | 中国科学院半导体研究所 | Making method of electrical absorption modulation tunneling injection type distributed feedback semiconductor laser |
| CN102163801A (en) * | 2011-03-24 | 2011-08-24 | 贵州大学 | Optoelectronic oscillator with active semiconductor resonant cavity |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2419033B (en) * | 2004-10-08 | 2009-12-09 | Agilent Technologies Inc | An integrated modulator / laser assembly and a method of producing same |
-
2011
- 2011-08-31 CN CN201110256183.XA patent/CN102338940B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269594A (en) * | 1999-03-15 | 2000-09-29 | Nec Corp | Integrated mode-locked semiconductor laser |
| CN101939689A (en) * | 2007-09-10 | 2011-01-05 | 集成光子学中心有限公司 | Electroabsorption modulators with a weakly guided optical waveguide mode |
| CN102055133A (en) * | 2009-11-04 | 2011-05-11 | 中国科学院半导体研究所 | Making method of electrical absorption modulation tunneling injection type distributed feedback semiconductor laser |
| CN102163801A (en) * | 2011-03-24 | 2011-08-24 | 贵州大学 | Optoelectronic oscillator with active semiconductor resonant cavity |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102338940A (en) | 2012-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105593747B (en) | The wide modulation bandwidth low optical losses optical strength of ultra low voltage or phase-modulator | |
| Dagli | Wide-bandwidth lasers and modulators for RF photonics | |
| CN102338940B (en) | Electric absorption modulator based on ring cavity | |
| CN106532434B (en) | The method of lamination selective area growth production multi-wavelength integreted phontonics transmitting chip | |
| CN101566777B (en) | Integrated optoelectronic device used for generating high-frequency microwaves based on sideband injection locking | |
| Liu et al. | III–V/silicon-on-insulator nanophotonic cavities for optical network-on-chip | |
| CN108767656A (en) | Coherent source component | |
| Fujikata et al. | High-speed Ge/Si electro-absorption optical modulator in C-band operation wavelengths | |
| CN101738748B (en) | Method for preparing high-speed electrical absorption modulator | |
| JPH10177154A (en) | Device for processing two waves, especially light wave, especially of semiconductor type | |
| KR20100066842A (en) | Optical loss modulator and manufacturing method thereof | |
| Dhiman | Silicon photonics: a review | |
| CN114188823A (en) | Preparation method of refrigeration-free anti-reflection InP-based quantum dot/quantum well coupled EML epitaxial wafer | |
| CN103401615B (en) | Full light Ultra-wide-band pulse signal generation device and method | |
| CN103605218A (en) | Waveguide electro-optic modulator and manufacturing method thereof | |
| CN113900285B (en) | Technology insensitive modulator | |
| Zhuang et al. | Peripheral-coupled-waveguide MQW electroabsorption modulator for near transparency and high spurious free dynamic range RF fiber-optic link | |
| US6633699B1 (en) | Optoelectronic system comprising several sections having respective functions coupled by evanescent coupling and production process | |
| Zhang et al. | High speed waveguide uni-traveling carrier InGaAs/InP photodiodes fabricated by Zn diffusion doping | |
| Lin et al. | InGaAs self-assembly quantum dot for high-speed 1300 nm electroabsorption modulator | |
| Xiong et al. | High-speed (> 40 GHz) integrated electroabsorption modulator based on identical epitaxial layer approach | |
| Huang et al. | Waveguide-based Photodetector integrated with Semiconductor Optical Amplifier | |
| Chung et al. | Large enhancement of linearity in electroabsorption modulator with composite quantum-well absorption core | |
| Tu et al. | A high-performance Si-based MOS electrooptic phase Modulator with a shunt-capacitor configuration | |
| Okano et al. | Analysis of vertical coupling between a 2D photonic crystal cavity and a hydrogenated-amorphous-silicon-wire waveguide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |