CN102336566A - 复合靶材及其制备方法 - Google Patents
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Abstract
本发明提供一种复合靶材,其含有质量百分比为50%-85%的氧化钛及以及余量的氧化锡或氧化铝。本发明还提供该种复合靶材的制备方法,其包括以下步骤:将质量百分比为50%-80%的氧化钛粉体,质量百分比为15%-50%的氧化锡粉体或氧化铝粉体及质量百分比为5%-10%的粘结剂混合均匀,制得一混合物;将适量混合物放入模具中热压制成一坯体;然后对坯体进行高温烧结;烧结后自然冷却。本发明复合靶材可用于真空磁控溅射设备制备具有疏水、防紫外线及自清洁功能的透明薄膜。
Description
技术领域
本发明涉及一种复合靶材及其制备方法,尤其涉及一种可制取具有疏水、防紫外线及自清洁功能透明薄膜的复合靶材及该复合靶材的制备方法。
背景技术
在玻璃表面镀膜的方法较多,主要有物理气相沉积、化学气相沉积及溶胶-凝胶等。物理气相沉积中常用的真空磁控溅射技术可设计多层复杂膜系,在玻璃基体上镀覆出性能较佳的膜层,是目前使用最广泛的玻璃镀膜技术之一。
基于玻璃基材的特殊性能,对玻璃镀膜的膜层有较高的要求,通常要求膜层具有较高的透光率,选择性透光,高阻隔比,如高的红外线、紫外线阻隔效果等,因此膜层的选择设计十分重要。目前要实现在玻璃上制备具有疏水、防紫外线、自清洁效果的透明功能薄膜,通常需要设计相应的多层复合膜系结构,如此一来导致制备薄膜的工艺时间长,产品的成本增加。
发明内容
有鉴于此,有必要提供一种可制取具有疏水、防紫外线及自清洁功能透明薄膜的复合靶材。
另外,还有必要提供一种上述复合靶材的制备方法。
一种复合靶材,其含有质量百分比为50%-85%的氧化钛以及余量的氧化锡或氧化铝。
一种复合靶材的制备方法,其包括以下步骤:
将质量百分比为50%-80%的氧化钛粉体,质量百分比为15%-50%的氧化锡粉体或氧化铝粉体及质量百分比为5%-10%的粘结剂混合均匀,制得一混合物;
将所述混合物放入模具中热压制成一坯体;
对所述坯体进行高温烧结;
烧结后自然冷却。
本发明复合靶材可用于真空磁控溅射制备具有疏水、防紫外线及自清洁功能的透明薄膜;本发明复合靶材的制备方法工艺简单、制程周期短,易于设计及控制、应用范围广泛。
具体实施方式
本发明一较佳实施方式的复合靶材,其含有质量百分比为50%-85%的氧化钛以及余量的氧化锡或氧化铝。
上述复合靶材的制备方法包括如下步骤:
将质量百分比为50%-80%的氧化钛粉体,质量百分比为15%-50%的氧化锡或氧化铝粉体,质量百分比为5%-10%的粘结剂混合搅拌均匀,制得一混合物。该氧化钛粉体的纯度可为97-99%,粒度可为70-90μm。该氧化锡粉体的纯度可为97-99%,粒度可为70-90μm。该氧化铝粉体的纯度可为97-99%,粒度可为70-90μm。该粘结剂中含有正硅酸乙脂及有机溶剂,其中正硅酸乙脂及有机溶剂的质量比可为1∶10。该有机溶剂可为乙醇或丙酮。
取适量上述混合物放入模具中,将该混合物压制成一坯体。压制的温度范围可为100-300℃,压力可为100-200吨。
对压制成型的坯体进行高温烧结,烧结温度为900-1800℃,烧结时间为3-4h。烧结过程中所述粘结剂中的有机溶剂及有机物被燃烧去除,而该粘结剂中的硅在烧结后以二氧化硅的形式存在于所述复合靶材中。
烧结完成后自然冷却,制得所述的复合靶材。
本发明复合靶材可用于真空磁控溅射制备具有疏水、防紫外线及自清洁功能的透明薄膜;本发明复合靶材的制备方法工艺简单、制程周期短,易于设计及控制、应用范围广泛。
Claims (7)
1.一种复合靶材,其特征在于:该复合靶材中含有质量百分比为50%-85%的氧化钛以及余量的氧化锡或氧化铝。
2.一种复合靶材的制备方法,其包括如下步骤:
将质量百分比为50%-80%的氧化钛粉体,质量百分比为15%-50%的氧化锡粉体或氧化铝粉体及质量百分比为5%-10%的粘结剂混合均匀,制得一混合物;
将所述混合物放入模具中热压制成一坯体;
对坯体进行高温烧结;
烧结后自然冷却。
3.如权利要求2所述复合靶材的制备方法,其特征在于:所述氧化钛粉体的纯度为97-99%,粒度为70-90μm;所述氧化锡粉体的纯度为97-99%,粒度为70-90μm;所述氧化铝粉体的纯度为97-99%,粒度为70-90μm。
4.如权利要求2所述的复合靶材的制备方法,其特征在于:所述粘结剂中含有正硅酸乙脂及有机溶剂,其中正硅酸乙脂及有机溶剂的质量比为1∶10。
5.如权利要求4所述的复合靶材的制备方法,其特征在于:所述有机溶剂为乙醇或丙酮。
6.如权利要求2所述的复合靶材的制备方法,其特征在于:所述热压的温度范围为100-300℃,压力为100-200吨。
7.如权利要求2所述的复合靶材的制备方法,其特征在于:所述高温烧结的温度范围为900-1800℃,烧结时间为3-4h。
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CN2010102392396A CN102336566A (zh) | 2010-07-28 | 2010-07-28 | 复合靶材及其制备方法 |
US13/094,983 US8535601B2 (en) | 2010-07-28 | 2011-04-27 | Composite target material and method for producing the same |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105272210A (zh) * | 2015-11-18 | 2016-01-27 | 南京迪纳科光电材料有限公司 | 高透节能玻璃用tzo半导体材料的制备方法 |
CN111943650A (zh) * | 2020-07-22 | 2020-11-17 | 长沙壹纳光电材料有限公司 | 一种用于活化等离子沉积技术的iwo靶材及其制备方法 |
Citations (1)
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JP2006111674A (ja) * | 2004-10-13 | 2006-04-27 | Mitsubishi Materials Corp | ゼオライト膜形成用塗料及び該塗料を用いたゼオライト膜の製造方法、ゼオライト膜 |
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DE3132674C2 (de) * | 1981-08-19 | 1983-12-08 | Degussa Ag, 6000 Frankfurt | Verfahren zur Herstellung von Preßlingen |
JPH10330169A (ja) * | 1997-05-29 | 1998-12-15 | Tosoh Corp | セラミックス焼結体の製造方法 |
US6387318B1 (en) * | 1997-12-05 | 2002-05-14 | Alliedsignal, Inc. | Glass-ceramic pressure sensor support base and its fabrication |
CA2563600A1 (en) * | 2004-04-28 | 2005-11-10 | Ohcera Co., Ltd. | Aluminum magnesium titanate crystal structure, and process for its production |
KR101297280B1 (ko) * | 2005-02-01 | 2013-08-16 | 토소가부시키가이샤 | 소결체, 스퍼터링 표적 및 성형 금형, 그리고 이것을 이용한 소결체의 제조 방법 |
JP5163121B2 (ja) * | 2005-08-01 | 2013-03-13 | 日立金属株式会社 | セラミックハニカム構造体の製造方法 |
CN101146589B (zh) * | 2005-09-28 | 2010-11-24 | 揖斐电株式会社 | 蜂窝式过滤器 |
JP2011051854A (ja) * | 2009-09-03 | 2011-03-17 | Sumitomo Chemical Co Ltd | チタン酸アルミニウム系焼成体の製造方法およびセラミックス成形体 |
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JP2006111674A (ja) * | 2004-10-13 | 2006-04-27 | Mitsubishi Materials Corp | ゼオライト膜形成用塗料及び該塗料を用いたゼオライト膜の製造方法、ゼオライト膜 |
Non-Patent Citations (3)
Title |
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D.H. KUO ET AL.: "Growth and properties of titania and aluminum titanate thin films obtained by r.f. magnetron sputtering", 《THIN SOLID FILMS》, 31 December 2002 (2002-12-31), pages 497 - 502, XP004397895, DOI: doi:10.1016/S0040-6090(02)00945-8 * |
JAU-HO JEAN ET AL.: "Low-Fire Processing of ZrO2-SnO2-TiO2 Ceramics", 《J.AM.CERAM.SOC.》, vol. 83, no. 6, 30 June 2000 (2000-06-30), pages 1417 - 1422 * |
P.R. BUENO ET AL.: "Sintering and mass transport features of (Sn,Ti)O2 polycrystalline ceramics", 《JOURNAL OF THE EUROPEAN CERAMIC SOCIETY》, vol. 23, 31 December 2003 (2003-12-31), pages 887 - 896, XP004402749, DOI: doi:10.1016/S0955-2219(02)00234-0 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105272210A (zh) * | 2015-11-18 | 2016-01-27 | 南京迪纳科光电材料有限公司 | 高透节能玻璃用tzo半导体材料的制备方法 |
CN111943650A (zh) * | 2020-07-22 | 2020-11-17 | 长沙壹纳光电材料有限公司 | 一种用于活化等离子沉积技术的iwo靶材及其制备方法 |
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