CN102331593B - 高占空比自支撑纳米透射光栅及其制作方法 - Google Patents
高占空比自支撑纳米透射光栅及其制作方法 Download PDFInfo
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- CN102331593B CN102331593B CN 201110190019 CN201110190019A CN102331593B CN 102331593 B CN102331593 B CN 102331593B CN 201110190019 CN201110190019 CN 201110190019 CN 201110190019 A CN201110190019 A CN 201110190019A CN 102331593 B CN102331593 B CN 102331593B
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 11
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 50
- 239000011521 glass Substances 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
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- 238000001259 photo etching Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 241000216843 Ursus arctos horribilis Species 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000010931 gold Substances 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 238000001020 plasma etching Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract 1
- 239000002086 nanomaterial Substances 0.000 abstract 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000001117 sulphuric acid Substances 0.000 description 6
- 235000011149 sulphuric acid Nutrition 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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CN 201110190019 CN102331593B (zh) | 2011-07-07 | 2011-07-07 | 高占空比自支撑纳米透射光栅及其制作方法 |
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CN 201110190019 CN102331593B (zh) | 2011-07-07 | 2011-07-07 | 高占空比自支撑纳米透射光栅及其制作方法 |
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CN102331593A CN102331593A (zh) | 2012-01-25 |
CN102331593B true CN102331593B (zh) | 2013-06-05 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629073B (zh) * | 2012-04-13 | 2013-09-18 | 中国科学院光电技术研究所 | 一种用于表面等离子体光刻的纳米光栅掩模制备方法 |
CN104760926B (zh) * | 2015-03-20 | 2016-07-06 | 西北工业大学 | 基于soi的超高深宽比纳米结构阵列的制作方法 |
CN106096594B (zh) * | 2016-08-02 | 2022-10-21 | 苏州科阳半导体有限公司 | 一种指纹盖板模组及其制作方法 |
CN108132496B (zh) * | 2017-12-28 | 2020-09-18 | 深圳市华星光电技术有限公司 | 金属栅偏光片及其制作方法、液晶面板及液晶显示器 |
CN108646329A (zh) * | 2018-03-29 | 2018-10-12 | 安徽工程大学 | X射线自支撑闪耀透射光栅的制备方法 |
CN109782382B (zh) * | 2018-12-25 | 2020-06-12 | 中国科学院长春光学精密机械与物理研究所 | 高开口面积临界角透射光栅的制备方法 |
CN110286432B (zh) * | 2019-06-25 | 2021-08-10 | 安徽工程大学 | X射线金透射光栅的制备方法 |
CN114185125B (zh) * | 2021-11-29 | 2024-04-02 | 西安理工大学 | 超表面偏振调控的消色差方法 |
CN117784513B (zh) * | 2024-02-23 | 2024-05-07 | 光科芯图(北京)科技有限公司 | 一种掩模结构及掩模结构制备方法 |
Citations (3)
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TW200521489A (en) * | 2003-12-26 | 2005-07-01 | Ind Tech Res Inst | Adjustable filter and manufacturing method thereof |
CN101017214A (zh) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | 一种高分辨率自支撑全镂空透射光栅的制作方法 |
CN101261331A (zh) * | 2008-04-21 | 2008-09-10 | 南京大学 | 基于纳米压印技术的自支撑透射金属光栅及制备方法 |
Family Cites Families (1)
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US7906255B2 (en) * | 2007-01-05 | 2011-03-15 | Georgia Tech Research Corporation | Photo-masks and methods of fabricating periodic optical structures |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200521489A (en) * | 2003-12-26 | 2005-07-01 | Ind Tech Res Inst | Adjustable filter and manufacturing method thereof |
CN101017214A (zh) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | 一种高分辨率自支撑全镂空透射光栅的制作方法 |
CN101261331A (zh) * | 2008-04-21 | 2008-09-10 | 南京大学 | 基于纳米压印技术的自支撑透射金属光栅及制备方法 |
Non-Patent Citations (12)
Title |
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13.4nm软X射线干涉光刻透射光栅的优化设计;朱伟忠等;《光学学报》;20080715(第07期);全文 * |
基于纳米压印技术制备200nm周期金自支撑透射光栅;袁远等;《南京大学学报(自然科学版)》;20090730(第04期);全文 * |
基于高级硅刻蚀和硅氧化工艺的软X射线干涉光刻分束光栅的优化设计;朱伟忠等;《核技术》;20080610(第06期);全文 * |
大高宽比、高线密度X射线透射光栅的制作;柳龙华等;《光学精密工程》;20090115(第01期);全文 * |
姚尧等.激光干涉结晶法制备一维周期结构的纳米硅阵列.《物理学报》.2008,(第08期), |
朱伟忠等.13.4nm软X射线干涉光刻透射光栅的优化设计.《光学学报》.2008,(第07期), |
朱伟忠等.基于高级硅刻蚀和硅氧化工艺的软X射线干涉光刻分束光栅的优化设计.《核技术》.2008,(第06期), |
朱效立等.高线密度X射线透射光栅的制作工艺.《半导体学报》.2007,(第12期), |
柳龙华等.大高宽比、高线密度X射线透射光栅的制作.《光学精密工程》.2009,(第01期), |
激光干涉结晶法制备一维周期结构的纳米硅阵列;姚尧等;《物理学报》;20080815(第08期);全文 * |
袁远等.基于纳米压印技术制备200nm周期金自支撑透射光栅.《南京大学学报(自然科学版)》.2009,(第04期), |
高线密度X射线透射光栅的制作工艺;朱效立等;《半导体学报》;20071215(第12期);全文 * |
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