CN103303860B - 一种在Si表面生成0‑50纳米任意高度纳米台阶的方法 - Google Patents
一种在Si表面生成0‑50纳米任意高度纳米台阶的方法 Download PDFInfo
- Publication number
- CN103303860B CN103303860B CN201310169904.2A CN201310169904A CN103303860B CN 103303860 B CN103303860 B CN 103303860B CN 201310169904 A CN201310169904 A CN 201310169904A CN 103303860 B CN103303860 B CN 103303860B
- Authority
- CN
- China
- Prior art keywords
- nano
- film
- steps
- substrate
- generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 6
- 230000000873 masking effect Effects 0.000 claims abstract description 6
- 238000001039 wet etching Methods 0.000 claims abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 4
- 238000000206 photolithography Methods 0.000 claims abstract description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 8
- 239000012159 carrier gas Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000746 purification Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Sampling And Sample Adjustment (AREA)
- ing And Chemical Polishing (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310169904.2A CN103303860B (zh) | 2013-05-10 | 2013-05-10 | 一种在Si表面生成0‑50纳米任意高度纳米台阶的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310169904.2A CN103303860B (zh) | 2013-05-10 | 2013-05-10 | 一种在Si表面生成0‑50纳米任意高度纳米台阶的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103303860A CN103303860A (zh) | 2013-09-18 |
CN103303860B true CN103303860B (zh) | 2017-04-26 |
Family
ID=49129630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310169904.2A Active CN103303860B (zh) | 2013-05-10 | 2013-05-10 | 一种在Si表面生成0‑50纳米任意高度纳米台阶的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103303860B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110646639A (zh) * | 2019-09-17 | 2020-01-03 | 西安交通大学 | 一种纳米测量仪器校准用标准样板及其制备方法 |
CN110724933A (zh) * | 2019-11-07 | 2020-01-24 | 中国电子科技集团公司第三十八研究所 | 一种铝合金表面热控涂层的制备方法 |
CN114543688B (zh) * | 2022-01-17 | 2024-12-20 | 中国电子科技集团公司第十三研究所 | 台阶高度标准样块、制备方法以及白光干涉仪校准方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101823684A (zh) * | 2010-04-30 | 2010-09-08 | 华中科技大学 | 一种仿蝴蝶磷翅分级多层非对称微纳结构的制备方法 |
CN101823685A (zh) * | 2010-04-30 | 2010-09-08 | 华中科技大学 | 一种仿生微纳结构制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102543682A (zh) * | 2012-02-17 | 2012-07-04 | 上海先进半导体制造股份有限公司 | 多级深台阶的形成方法 |
-
2013
- 2013-05-10 CN CN201310169904.2A patent/CN103303860B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101823684A (zh) * | 2010-04-30 | 2010-09-08 | 华中科技大学 | 一种仿蝴蝶磷翅分级多层非对称微纳结构的制备方法 |
CN101823685A (zh) * | 2010-04-30 | 2010-09-08 | 华中科技大学 | 一种仿生微纳结构制备方法 |
Non-Patent Citations (1)
Title |
---|
原子层沉积制备Al2O3薄膜的光学性能研究;何俊鹏等;《光学学报》;20100131;第30卷(第1期);第277-282页 * |
Also Published As
Publication number | Publication date |
---|---|
CN103303860A (zh) | 2013-09-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11921427B2 (en) | Methods for making hard masks useful in next-generation lithography | |
CN108646329A (zh) | X射线自支撑闪耀透射光栅的制备方法 | |
CN104698512B (zh) | 具有防反射功能的部件及其制造方法 | |
CN101734611A (zh) | 基于无掩膜深反应离子刻蚀制备黑硅的方法 | |
US9688540B2 (en) | Segmented graphene growth on surfaces of a patterned substrate layer and devices thereof | |
JP6311772B2 (ja) | ナノインプリント用テンプレートの製造方法 | |
CN103303860B (zh) | 一种在Si表面生成0‑50纳米任意高度纳米台阶的方法 | |
KR102027776B1 (ko) | 무한 선택비를 갖는 원자층증착법을 이용한 패턴의 제조 방법 | |
CN1867695B (zh) | 改善沉积的介电膜上的显影后光刻胶外形的方法 | |
CN113421825B (zh) | 一种基于Cr/Cu双层金属掩膜的硅湿法刻蚀方法 | |
CN104326440A (zh) | 一种精确控制深度的微纳米结构的制作方法 | |
CN109666917B (zh) | 一种金刚石表面结构及其制备方法 | |
Park et al. | Fabrication of 3D ZnO hollow shell structures by prism holographic lithography and atomic layer deposition | |
CN109742019A (zh) | 一种利用紫外激光加工干法刻蚀中硬掩膜板的方法 | |
CN110286432B (zh) | X射线金透射光栅的制备方法 | |
TWI285919B (en) | Method and apparatus for manufacturing semiconductor | |
CN102126699A (zh) | 一种利用原子束和纳米孔进行微小尺寸图形制作的方法 | |
Chang | Integrated in situ self-aligned double patterning process with fluorocarbon as spacer layer | |
CN103789768B (zh) | 一种纳米级的铝刻蚀方法 | |
JP2014029997A (ja) | ナノインプリント用テンプレートの製造方法 | |
TW202413382A (zh) | Euv乾式光阻沉積的錫前驅物 | |
RU2656627C1 (ru) | Способ селективного осаждения поликристаллического алмазного покрытия на кремниевые основания | |
WO2023215136A1 (en) | Post-development treatment of metal-containing photoresist | |
CN116904966A (zh) | 制造用于euv光刻的衬底和反射光学元件的方法 | |
TW200908147A (en) | Low temperature SACVD processes for pattern loading applications |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Wang Chenying Inventor after: Jiang Zhuangde Inventor after: Yang Shuming Inventor after: Zhang Yijun Inventor after: Ren Wei Inventor after: Jing Weixuan Inventor after: Lin Qijing Inventor after: Li Lei Inventor before: Jiang Zhuangde Inventor before: Wang Chenying Inventor before: Yang Shuming Inventor before: Lin Qijing Inventor before: Li Lei |
|
COR | Change of bibliographic data | ||
GR01 | Patent grant | ||
GR01 | Patent grant |